• Title/Summary/Keyword: high energy physics

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SEOUL NATIONAL UNIVERSITY CAMERA II (SNUCAM-II): THE NEW SED CAMERA FOR THE LEE SANG GAK TELESCOPE (LSGT)

  • Choi, Changsu;Im, Myungshin
    • Journal of The Korean Astronomical Society
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    • v.50 no.3
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    • pp.71-78
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    • 2017
  • We present the characteristics and the performance of the new CCD camera system, SNUCAM-II (Seoul National University CAMera system II) that was installed on the Lee Sang Gak Telescope (LSGT) at the Siding Spring Observatory in 2016. SNUCAM-II consists of a deep depletion chip covering a wide wavelength from $0.3{\mu}m$ to $1.1{\mu}m$ with high sensitivity (QE at > 80% over 0.4 to $0.9{\mu}m$). It is equipped with the SDSS ugriz filters and 13 medium band width (50 nm) filters, enabling us to study spectral energy distributions (SEDs) of diverse objects from extragalactic sources to solar system objects. On LSGT, SNUCAM-II offers $15.7{\times}15.7$ arcmin field-of-view (FOV) at a pixel scale of 0.92 arcsec and a limiting magnitude of g = 19.91 AB mag and z=18.20 AB mag at $5{\sigma}$ with 180 sec exposure time for point source detection.

Annealing effects of AgInS$_2$/GaAs Epilayer grown by Hot Wall Epitaxy

  • K. J. Hong;Park, C.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.823-827
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    • 2001
  • The AgInS$_2$epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on the AgInS$_2$/GaAs was derived as the Varshni's relation of Eg(T)=2.1365 eV-(9.89${\times}$10$\^$-3/ eV)T$^2$/(2930+T). After the as-grown AgInS$_2$/GaAs was annealed in Ag-,S-, and In-atmosphere, the origin of point defects of the AgInS$_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of V$\_$Ag/, V$\_$s/, Ag$\_$int/, and S$\_$int/ obtained from PL measurement were classified to donors or acceptors type. And, we concluded that the heat-treatment in the S-atmosphere converted the AgInS$_2$/GaAs to optical p-type. Also, we confirmed that the In in the AgInS$_2$/GaAs did net from the native defects because the In in AgInS$_2$did exist as the form of stable bonds.

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Structural Evolution and Electrical Properties of Highly Active Plasma Process on 4H-SiC

  • Kim, Dae-Kyoung;Cho, Mann-Ho
    • Applied Science and Convergence Technology
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    • v.26 no.5
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    • pp.133-138
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    • 2017
  • We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

A Destruction Pattern Analysis of a Turbo-Molecular Pump According to the Foreline Clamp Damage in an ICP Dry Etcher for 300 mm Wafers

  • Jeong, Jinyong;Lee, Intaek;Joo, Junghoon
    • Applied Science and Convergence Technology
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    • v.24 no.2
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    • pp.27-32
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    • 2015
  • We analyzed the destruction patterns of a turbo-molecular pump (TMP) resulting from its sudden exposure of a foreline to the atmospheric pressure due to a destruction of the foreline connecting clamp of an ICP dry etcher for 300 mm wafers during high-vacuum operation ($5{\times}10^{-6}$ Torr). Unlike in the case of view port's breakage, the TMP's rotor module was crashed inside the chamber. The primary damage resulted from the collision of the blades and stators, and the secondary damage resulted from the breaking of the rotor - driving shaft assembly. The fixing screws of the rotor and axial shaft were bent and broken when the TMP controller output the maximum current even after the crash event. Electrical power consumption analysis of the TMP power controller confirmed it. The stress distributions were analyzed by a finite element method using CFD-ACE+ multi physics software. Rotating inertia of each parts and kinetic energies were calculated as well. 68% of the rotational kinetic energy is deposited by the rotor - shaft module.

Properties of Photoluminescience for AgInS2/GaAs Epilayer Grown by Hot Wall Epitaxy

  • Lee, Sang-Youl;Hong, Kwang-Joon
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.2
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    • pp.50-54
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    • 2004
  • The AgInS$_2$epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on the AgInS$_2$/GaAs was derived as the Varshni's relation of E$\_$g/(T) = 2.1365 eV - (9.89${\times}$10$\^$-3/ eV/K) T$^2$/(2930+T eV). After the as-grown AgInS$_2$/GaAs was annealed in Ag-, S-. and In-atmosphere, the origin of point defects of the AgInS$_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of $V_{Ag}$, $V_s$, $Ag_{int}$, and $S_{int}$ obtained from PL measurement were classified to donors or accepters type. And, we concluded that the heat-treatment in the S- atmosphere converted the AgInS$_2$/GaAs to optical p-type. Also, we confirmed that the In in the AgInS$_2$/GaAs did not form the native defects because the In in AgInS$_2$did exist as the form of stable bonds.

Interface Engineering in Superconducting Ultra-thin Film of Ga (Ga 극초박막의 계면특성과 초전도 물성제어에 대한 연구)

  • Lee, Nyun-Jong;Kim, Tae-Hee
    • Journal of the Korean Magnetics Society
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    • v.20 no.6
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    • pp.212-215
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    • 2010
  • Spin polarized tunneling studies were carried out with Al-Ga bilayer as a spin detector, by Meservey-Tedrow technique. The superconductor (SC)/Insulator (I)/Ferromagnet (FM) tunnel junctions were provided by ultra high vacuum molecular beam epitaxy (UHV-MBE) technique. The analysis of interfacial properties in the Al-Ga bilayer was also carried out by Auger electron spectroscopy. It was observed that the superconducting transition temperature and energy gap were raised in comparison with that of bulk Ga and pure ultrathin Al films. Current studies clearly show how one can modify the material properties at the interface just with a few monolayers.

Optoelectronics Properties of In0.27Ga0.73N/GaN Multi-Quantum-Well Structure (In0.27Ga0.73N/GaN 다중 양자우물 구조에 대한 광전기적 특성)

  • Park, Hun-Bo;Bae, In-Ho;Kim, Ki-Hong
    • Korean Journal of Materials Research
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    • v.17 no.9
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    • pp.489-492
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    • 2007
  • Temperature and injection current dependence of elctroluminescence(EL) spectral intensity of the $In_{0.27}Ga_{0.73}N/GaN$ multi-quantum-well(MQW) have been studied over a wide temperature and as a function of injection current level. EL peaks also show significant broadening into higher photon energy region with the increase of injection current. This is explained by the band-filling effect. When temperature is slightly increased to 300 from 15 K, the EL emission peak showed red-blue-red shift. It can be explained by the carrier localization by potential fluctuation of multiple quantum well and band-gap shrinkage as temperature increase. It is found that a temperature-dependent variation pattern of the EL efficiency under very low and high injection currents show a drastic difference. This unique EL efficiency variation pattern with temperature and current is explained field effects due to the driving forward bias in presence of internal(piezo and spontaneous polarization) fields.

Review of the Existing Relative Biological Effectiveness Models for Carbon Ion Beam Therapy

  • Kim, Yejin;Kim, Jinsung;Cho, Seungryong
    • Progress in Medical Physics
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    • v.31 no.1
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    • pp.1-7
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    • 2020
  • Hadron therapy, such as carbon and helium ions, is increasingly coming to the fore for the treatment of cancers. Such hadron therapy has several advantages over conventional radiotherapy using photons and electrons physically and clinically. These advantages are due to the different physical and biological characteristics of heavy ions including high linear energy transfer and Bragg peak, which lead to the reduced exit dose, lower normal tissue complication probability and the increased relative biological effectiveness (RBE). Despite the promising prospects on the carbon ion radiation therapy, it is in dispute with which bio-mathematical models to calculate the carbon ion RBE. The two most widely used models are local effect model and microdosimetric kinetic model, which are actively utilized in Europe and Japan respectively. Such selection on the RBE model is a crucial issue in that the dose prescription for planning differs according to the models. In this study, we aim to (i) introduce the concept of RBE, (ii) clarify the determinants of RBE, and (iii) compare the existing RBE models for carbon ion therapy.

Effect of Heat Treatment on Radiation Shielding Properties of Concretes

  • Singh, Vishwanath P.;Tekin, Huseyin O.;Badiger, Nagappa M.;Manici, Tubga;Altunsoy, Elif E.
    • Journal of Radiation Protection and Research
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    • v.43 no.1
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    • pp.20-28
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    • 2018
  • Background: Heat energy produced in nuclear reactors and nuclear fuel cycle facilities interactions modifies the physical properties of the shielding materials containing water content. Therefore, in the present paper, effect of the heat on shielding effectiveness of the concretes is investigated for gamma and neutron. The mass attenuation coefficients, effective atomic numbers, fast neutron removal cross-section and exposure buildup factors. Materials and Methods: The mass attenuation coefficients, effective atomic numbers, fast neutron removal cross-section and exposure buildup factors of ordinary and heavy concretes were investigated using NIST data of XCOM program and Geometric Progression method. Results and Discussion: The improvement in shielding effectiveness for photon and reduction in fast neutron for ordinary concrete was observed. The change in the neutron shielding effectiveness was insignificant. Conclusion: The present investigation on interaction of gamma and neutron radiation would be very useful for assessment of shielding efficiency of the concrete used in high temperature applications such as reactors.

Star Formation Activity in Infra-Red Dark Cloud at ${\Gamma}53.2^{\circ}$

  • Kim, Hyun-Jeong;Koo, Bon-Chul
    • The Bulletin of The Korean Astronomical Society
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    • v.36 no.1
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    • pp.82.2-82.2
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    • 2011
  • Infra-Red Dark Clouds (IRDCs) seen silhouette against the bright Galactic background in mid-IR are a class of interstellar clouds that are dense and cold with very high column densities. While IRDCs are believed to be the precursors to massive stars and star clusters, individual IRDCs show diverse star forming activities within them. We report a remarkable example of such cloud, the IRDC at ${\Gamma}53.2^{\circ}$, and star formation activity in this cloud. The IRDC was previously identified in part as three separate, arcmin-size clouds in the catalogue of MSX IRDC candidates, but we found that the IRDC is associated with a long, filamentary CO cloud at 2 kpc from the Galactic Ring Survey data of $^{13}CO$ J = 1-0 emission, and that its total extent reaches ~ 30pc. The Spitzer MIPSGAL 24mm data show a number of reddened mid-IR sources distributed along the IRDC which are probably young stellar objects (YSOs), and the UWISH2 $H_2$ data (2.122mm) reveal ubiquitous out flows around them. These observations indicate that the IRDC is a site of active star formation with YSOs in various evolutionary stages. In order to investigate the nature of mid-IR sources, we have performed photometry of MIPSGAL data, and we present a catalogue of YSOs combining other available point source catalogues from optical to IR. We discuss the evolutionary stages and characteristics of YSOs from their IR colors and spectral energy distributions.

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