• 대한방사선기술학회지:방사선기술과학
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• 제26권2호
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• pp.63-69
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• 2003

영상재구성에 있어 잡음(noise)을 제거하고 공간 분해능과 대조도 분해능을 향상시킬 수 있는 filter에서 cut off 주파수 level에 따라 영상의 질에 영향을 미치는 경향을 반폭치(FWHM : full width at half maximum)측정방법을 이용하여 비교하였다. 선택한 filter의 종류는 Band-limited, Sheep-logan, Sheep-logan Hanning, Generalized Hamming, Low pass cosine, Parazen, 그리고 Butterworth filter이다. SPECT 영상을 기록하기 위한 점선원(point source)으로 방사성의약품 $^{99m}TcO_4$을 이용하였으며 점선원에 대하여 각각의 filter에서 cut off 주파수 준위별로 영상을 기록하고 axial transverse, coronal sagittal... fh의 section image의 profile 곡선에서 반폭치을 측정하여 비교하였다. 본 연구에서 사용한 filter들에 있어서는 cut off level에 따라 X, Y, 그리고 Z축 방향으로의 평균 FWHM의 길이가 $9.16\;mm{\sim}18.14\;mm$까지 측정되었는데 cut off level 0.7에서 Generalized Hamming filter와 Band limited filter의 경우 9.16 mm로 반폭치의 길이가 제일 짧은 것으로 나타났다.

• 한국소음진동공학회논문집
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• 제21권5호
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• pp.447-454
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• 2011

This paper reports a filtered velocity feedback(FVF) controller, which is an alternative to direct velocity feedback(DVFB) controller. The instability problems due to high frequency response under DVFB can be alleviated by the suggested FVF controller. The FVF controller is designed to filter out the unstable high frequency response. The FVF controller and the dynamics of clamped beams under forces and moments are first formulated. The effects of the design parameters(cut-off frequency, gain, and damping ratio) on the stability and the performance are then investigated. The cut-off frequency should be selected not to affect the system stability. The magnitude of the open loop transfer function(OLTF) at the cut-off frequency should be small. As increasing the gain of the FVF controller, the magnitude of the OLTF is increased, so that the closed loop response can be reduced more. The enhancement of the OLTF at the cut-off frequency is reduced but the phase behavior around the cut-off frequency is distorted, as the damping ratio is increased. The control performance is finally estimated for the clamped beam. More than 10 dB reductions in velocity response can be achieved at the modal frequencies from the first to eighth modes.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2011년도 춘계학술대회 논문집
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• pp.264-270
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• 2011

This paper reports a filtered velocity feedback (FVF) controller, which is an alternative to direct velocity feedback (DVFB) controller. The instability problems due to high frequency response under DVFB can be alleviated by the suggested FVF controller. The FVF controller is designed to filter out the unstable high frequency response. The FVF controller and the dynamics of clamped beams under forces and moments are first formulated The effects of the design parameters (cut-off frequency, gain, and damping ratio) on the stability and the performance are then investigated. The cut-off frequency should be selected not to affect the system stability. The magnitude of the open loop transfer function (OLTF) at the cut-off frequency should be small. As increasing the gain of the FVF controller, the magnitude of the OLTF is increased, so that the closed loop response can be reduced more. The enhancement of the OLTF at the cut-off frequency is reduced but the phase behavior around the cut-off frequency is distorted, as the damping ratio is increased The control performance is finally estimated for the clamped beam. More than 10dB reductions in velocity response can be achieved at the modal frequencies from the first to eighth modes.

• 전기학회논문지
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• 제56권5호
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• pp.892-897
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• 2007

This paper presents the output filter design and the output characteristic analysis by cut-off frequency set up of the LCR filter on NPC multi-level inverter with trap-filter. The single-phase NPC three-level inverter operates at low switching frequency. The proposed LC trap filter is comprised of a conventional LCR output filter, by using LC trap filter the need for high damping resistor and low LC cut-off frequency is eliminated. Also. low damping resistor is increased the output filter system. The multilevel inverter system used NPC type inverter in proper system for high power application and controller is used DSP(TMS320C31). The effectiveness of proposed system confirmed the validity through SPICE simulation and experimental results.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 춘계종합학술대회
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• pp.690-692
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• 2003

본 논문에서는 main gate 50nm를 갖는 double gate MOSFET에서 side gate의 길이변화에 따른 주파수 특성을 조사하였다. side gate길이가 감소할수록 컷오프 주파수는 증가하는 것을 볼 수 있었다. 결과적으로 side gate 길이가 70nm일 때 최적의 동작 특성을 보였으며, 이때 컷오프 주파수는 41.4GHz로 매우 높은 컷오프 주파수를 갖음을 알았다.

• 대한임상검사과학회지
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• 제55권3호
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• pp.132-142
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• 2023

서울대학교병원 진단면역검사실에서 HLA 형별 검사를 위한 결과 산출하는 과정에서 HLA-DR 검사 시행 건수 총 611건 중 Lot No.20의 시약에서 빈번히 나타나는 위양성과 위음성으로 의심되는 특이 bead 들의 반응을 발견하게 되었다. 따라서 정확한 결과 산출과정을 모색하기 위하여 특이 bead들의 cut-off 수정을 하지 않은 검사결과 533건과 특이 bead의 cut-off 수정을 한 뒤 결과 산출을 한 78건의 사례들을 가지고 cut-off 수정을 야기시키는 요인을 여러 변수로서 규명하고자 하였다. 검체대상의 인구통계특성과 cut-off 수정 여부를 확인하기 위해 빈도분석, 검사실의 습도를 변수로 넣어 기술통계를 진행하였고, cut-off 수정 여부와 인구통계특성의 연관성을 확인하기 위하여 교차분석을 시행, cut-off 수정 여부에 따른 습도의 차이를 검증하기 위해 독립표본 t검증을 실시하였다. 마지막으로 습도수준에 따른 cut-off 수정비율의 관계를 검증하기 위해 로지스틱 회귀분석을 실시하였다. 결과적으로 검사실의 습도 수준이 증가함에 따라 cut-off 수정사례는 0.986배 감소하는 것으로 나타났다. 이는 습도가 낮아질수록 cut-off 수정률이 증가한다는 것을 의미한다. 따라서 검사실의 습도 또한 HLA typing 결과에 영향을 미치는 요인임을 시사한다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.9-11
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• 2000

To increase the device linearities and the breakdown-voltages of FETs, Al$\sub$0.25/ Ga$\sub$0.75/AS / In$\sub$0.25/Ga$\sub$0.75/As / Partially doped channel FET(DCFET) structures are proposed. The metal- insulator -semiconductor (MIS) like structures show the high gate-drain breakdown voltage(-20 V) and high linearities. The devices showed the small ripple of the current cut-off frequency and the power cut-off frequency over the wide bias range.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1803-1805
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• 2000

This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's) for high frequency application. Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. An HBT with 15% triangular Ge profile shows higher cut-off frequency and DC current gain than that with 19% trapezoidal Ge profile. The cut-off frequency and BC gain are increased from 42GHz to 84GHz and from 200 to 600, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.142-142
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• 2011

Microwave diagnostics method for plasma science and engineering is vigorous research area for its good characteristics such as high sensitivity, reliability, and broad measurement spectrum from low density plasma to high density. We investigate mechanism of microwave probes (hairpin, impedance and absorbtionf probe) and apply it for interpretation of full transmitted spectrum of cutoff probe. Mechanism of the spectrum having same key roles of I-V curve of Langmuir probe is not exactly revealed yet in spite of its importance. This study elucidates physics behind it using a circuit model and E/M wave simulation. Circuit model reveals exact cut-off peak frequency taking account of a collision frequency and a plasma frequency and it enable precise diagnostics of plasma densty from low pressure to high pressre. Cut-off like peaks have been obstacle for choosing cut-off peak is analyzed by E/M simulation and one of cutoff like peaks made by probe holder used for acquire plasma density with cutoff peak applying the hairpin relation. Furthermore, phase difference method for plasma density is conducted. This method uses a single microwave frequency source and it is low-priced.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권2호
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• pp.120-131
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• 2007

A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (T-gate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal work-function and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.