• Title/Summary/Keyword: high critical current density

Search Result 263, Processing Time 0.028 seconds

Ar 이온 밀링으로 손상된 단결정 SrTiO$_3$ 기판의 산소 열처리 효과 (Oxygen Annealing Effect of SrTiO$_3$ Single Crystal Substrate Damaged by Ar$^+$ Ion Milling)

  • 최희석;황윤석;김진태;이동훈;이순걸;박용기;박종철
    • 한국초전도학회:학술대회논문집
    • /
    • 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
    • /
    • pp.87-90
    • /
    • 1999
  • We have studied the annealing effects of 570 (SrTiO$_3$) single crystal substrate and the I-V properties of step-edge junctions after Ar ion milling. YBa$_2Cu_3O_7$ (YBCO) thin films are fabricated on the substrates by using pulsed laser deposition (PLD) and photolithography. The surface of Ar ion milled substrate was characterized with atomic force microscope (AFM) and scanning electron microscope (SEM) images. After the substrate was damaged by milling, the critical current density of YBCO thin films deposited on the substrate was lowered. The annealing of the damaged substrate at about 1000 $^{\circ}C$ recovered the critical current density to that before the milling. Futhermore the annealing helped junction formation due to high quality film and increased the yield rate for the fabrication of high quality step-edge junction.

  • PDF

냉각 조건에 의한 Bi-Pb-Sr-Ca-Cu-O 초전도 선재의 특성 연구 (A study on the superconducting properties of Bi-Pb-Sr-Ca-Cu-O superconducting wire with cooling conditions.)

  • 김민기;최효상;최성환;박성진;한병성
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
    • /
    • pp.213-215
    • /
    • 1993
  • Silver-sheathed Bi-Pb-Sr-Ca-Cu-O wires by the powder-in-tube method were preparated to study on the superconducting properties with cooling conditions. Superconducting wires were cooled down in the furnace, air and liquid $N_2$ after sintering at $840^{\circ}C$. Critical current density of sample cooled in the furnace is $5.1{\times}10^3\;A/cm^2$ at 77K, zero magnetic field and Jc of sample cooled in the air is very low. 2223 high-Tc superconducting phase of sample cooled in the air was distroyed. Therefore, we knew that superconducting wire need to cool slowly to get the high critical current density.

  • PDF

수정된 TFA-MOD법에 의한 $SmBa_{2}Cu_{3}O_{7-{\delta}}$ 박막의 제조 (Fabrication of High-Quality $SmBa_{2}Cu_{3}O_{7-{\delta}}$ Thin Films by a Modified TFA-MOD Process)

  • 김덕진;송규정;문승현;박찬;유상임
    • Progress in Superconductivity
    • /
    • 제7권1호
    • /
    • pp.77-82
    • /
    • 2005
  • We report a successful fabrication of high-quality $SmBa_{2}Cu_{3}O_{7-{\delta}}$ (SmBCO) thin films on $LaAlO_3$(LAO)(100) single crystalline substrates by a modified TFA-MOD method. After the pyrolysis heat treatment of spin-coated films up to $400^{\circ}C$, SmBCO films were fired at various temperatures ranging from 810 to $850^{\circ}C$ in a reduced oxygen atmosphere (10 ppm $O_2$ in Ar). Optimally processed SmBCO films exhibited the zero-resistance temperature ($T_{c,zero}$) of 90.2 K and the critical current density ($J_c$) of $0.8\;MA/cm^2$ at 77K in self-field. Compared with the $J_c$ values (normally, > $2\;MA/cm^2$ at 77 K) of MOD-TFA processed YBCO films, rather depressed $J_c$ values in SmBCO films are most probably attributed to the existence of ${\alpha}$-axis oriented grains.

  • PDF

Significant enhancement of critical current density by effective carbon-doping in MgB2 thin films

  • Ranot, Mahipal;Lee, O.Y.;Kang, W.N.
    • 한국초전도ㆍ저온공학회논문지
    • /
    • 제15권2호
    • /
    • pp.12-15
    • /
    • 2013
  • The pure and carbon (C)-doped $MgB_2$ thin films were fabricated on $Al_2O_3$ (0001) substrates at a temperature of $650^{\circ}C$ by using hot-filament-assisted hybrid physical-chemical vapor deposition technique. The $T_c$ value for pure $MgB_2$ film is 38.5 K, while it is between 30 and 35 K for carbon-doped $MgB_2$ films. Expansion in c-axis lattice parameter was observed with increase in carbon doping concentration which is in contrast to carbon-doped $MgB_2$ single crystals. Significant enhancement in the critical current density was obtained for C-doped $MgB_2$ films as compared to the undoped $MgB_2$ film. This enhancement is most probably due to the incorporation of C into $MgB_2$ and the high density of grain boundaries, both help in the pinning of vortices and result in improved superconducting performance.

The flux pinning properties of BaSnO3-added GdBa2Cu3O7-δ films with varying growth conditions

  • Lee, J.K.;Oh, J.Y.;Lee, J.M.;Kang, W.N.;Kang, B.
    • 한국초전도ㆍ저온공학회논문지
    • /
    • 제19권3호
    • /
    • pp.18-22
    • /
    • 2017
  • Addition of $BaSnO_3$ (BSO) to $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) is reported to enhance the flux pinning property of GdBCO thick films. To investigate the effect of growth condition on the pinning properties, 700 nm-thick BSO-added GdBCO films deposited with varying temperatures and growth rates were prepared by using a pulsed laser deposition method. As the deposition temperature increases, the critical current density and the pinning force density show an improved field dependence up to $750^{\circ}C$ due to the increase in the formation of the a-axis growth and the BSO nanostructures. The films deposited at higher temperatures show degraded surfaces and as a result, degraded pinning behaviors. For the change in growth rate, the critical current density and the pinning force increase as the repetition rate increase at low magnetic fields, but this behavior is reversed in high magnetic fields. These results indicate that the film growth conditions significantly affect the formation of BSO nanostructures and the pinning properties of BSO-added GdBCO films.

DDIC 칩의 정전기 보호 소자로 적용되는 GG_EDNMOS 소자의 고전류 특성 및 더블 스냅백 메커니즘 분석 (High Current Behavior and Double Snapback Mechanism Analysis of Gate Grounded Extended Drain NMOS Device for ESD Protection Device Application of DDIC Chip)

  • 양준원;김형호;서용진
    • 한국위성정보통신학회논문지
    • /
    • 제8권2호
    • /
    • pp.36-43
    • /
    • 2013
  • 본 논문에서는 고전압에서 동작하는 DDIC(display driver IC) 칩의 정전기 보호소자로 사용되는 GG_EDNMOS 소자의 고전류 특성 및 더블 스냅백 메커니즘이 분석되었다. 이온주입 조건을 달리하는 매트릭스 조합에 의한 수차례의 2차원 시뮬레이션 및 TLP 특성 데이타를 비교한 결과, BJT 트리거링 후에 더블 스냅백 현상이 나타났으나 웰(well) 및 드리프트(drift) 이온주입 조건을 적절히 조절함으로써 안정적인 ESD 보호성능을 얻을 수 있었다. 즉, 최적의 백그라운드 캐리어 밀도를 얻는 것이 고전압 동작용 정전기보호소자의 고전류 특성에 매우 중요한 영향을 주는 임계인자(critical factor)임을 알 수 있었다.

전도냉각 고온초전도 SMES 시스템의 기초절연 특성 (Basic Insulation Characteristics of Conduction-Cooled HTS SMES System)

  • 최재형;곽동순;천현권;김상현
    • 대한전기학회논문지:전기물성ㆍ응용부문C
    • /
    • 제55권8호
    • /
    • pp.404-410
    • /
    • 2006
  • Toward the practical applications, on operation of conduction-cooled HTS SMES at temperatures well below 40[K] should be investigated, in order to take advantage of a greater critical current density of HTS and considerably reduce the size and weight of the system. In order to take advantage of a greater critical current density of high temperature superconducting (HTS) and considerably reduce the size and weight of the system, conduction-cooled HTS superconducting magnetic energy storage (SMES) at temperatures well below 40[K] should be investigated. This work focuses on the breakdown and flashover phenomenology of dielectrics exposed in air and/or vacuum for temperatures ranging from room temperature to cryogenic temperature. Firstly, we summarize the insulation factors of the magnet for the conduction cooled HTS SMES. And Secondly a surface flashover as well as volume breakdown in air and/or vacuum with two kind insulators has been investigated. Finally, we will discuss applications for the HTS SMES including aging studies on model coils exposed in vacuum at cryogenic temperature. The commercial application of many conduction-cooled HTS magnets, however, requires refrigeration at temperatures below 40[K], in order to take advantage of a greater critical current density of HTS and reduce considerably the size and weight of the system. The magnet is driven in vacuum condition. The need to reduce the size and weight of the system has led to the consideration of the vacuum as insulating media. We are studying on the insulation factors of the magnet for HTS SMES. And we experiment the spacer configure effect in the dielectric flashover characteristics. From the results, we confirm that our research established basic information in the insulation design of the magnet.

열간정수압소결(HIP) 시킨 고온초전도체의 조직과 특성 (Microstructure and Properties of High Tc Superconductor fabricated by Hot Isostatic Pressing)

  • 송진태;아기하마료소
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 1988년도 춘계학술대회 논문집
    • /
    • pp.17-19
    • /
    • 1988
  • $YBa_2Cu_3O_{7-x}$ oxide superconductors were fabricated by the hot isostatic pressing (HIP). It was shown that their structures were orthorombic and constited of a single (123) phase. While as-sintered compacts had many pores, they were remarkably reduced by Hiping. The on-set and off set temperature of (123) compound sintered at $950^{\circ}C$ in oxygen and hiping at $880^{\circ}C$ were the highest and it showed 0 resistance at $90^{\circ}K$. The critical current density ($J_c$) of the above superconductor was $27A/cm^2$ and it also showed a number of twin structures, which are typical of high $T_c$ superconductor. It seemed that the low current density may be due to the many pores of starting-sintered compacts.

  • PDF

MOD 방법을 이용한 Bi2Sr2CaCu2O8+d 박막제작 (Bi2Sr2CaCu2O8+d Thin Films Grown on (100) MgO Substrate by Metallorganic Decomposition Method)

  • 김선미;박미화;이기진;차덕준
    • 한국전기전자재료학회논문지
    • /
    • 제16권11호
    • /
    • pp.1035-1040
    • /
    • 2003
  • High $T_{c}$ superconducting B $i_2$S $r_2$CaC $u_2$ $O_{8+d}$ (BSCCO2212) films were prepared by a metallorganic decomposition (MOD) method. The metal organic solution of BSCCO2212 was spin-coated on MgO (100) substrates at 3000 rpm for 1 min. To achieve a high critical current density, we controlled heat-treatment conditions and atmosphere. The films were annealed at temperature 75$0^{\circ}C$ ∼ 80$0^{\circ}C$ in $O_2$ or air. We obtained c-axis orientated BSCCO thin films on MgO substrates. The annealed sample at 77$0^{\circ}C$ with $O_2$ showed the critical temperature about 77 K and critical current denstity of 1.19 ${\times}$ 10$^{5}$ A/$\textrm{cm}^2$ about 13 K.

Nb/$Al_{2}$$O_{3}$ /Nb 조셉슨 접합의 임계전류밀도 제어 ($J_{c}$ control ofNb/$Al_{2}$$O_{3}$ /Nb Josephson junction)

  • 김규태;홍현권;이상길;이규원
    • 한국초전도저온공학회:학술대회논문집
    • /
    • 한국초전도저온공학회 2002년도 학술대회 논문집
    • /
    • pp.10-12
    • /
    • 2002
  • Single Josephson junctions of 50 $\mu$m $\times$ 50 $\mu$m were fabricated for several oxidation conditions to investigate controllabilities of critical current density ($J_{c}$) with the standard KRISS processes. Considering the self-field effect suppressing the observed critical current ($I_{c}$) at high $J_{c}$ region, we could reasonably estimate $J_{c}$ values from I-V observations. The dependence of the estimated $J_{c}$ as a function of exposure, which is equal to pressure(P) times time(t), was well fitted to a curve of $J_{c}$ ~ $(Pt)^{-0.36}$. The maximum $J_{c}$ value at the controllability margin was found to be 4 kA/$cm^{2}$ with the current equipment set up.

  • PDF