• 제목/요약/키워드: high critical current density

검색결과 263건 처리시간 0.034초

$LiBr-H_2O$계 흡수식냉동기의 부식에 미치는 LiBr 농도의 영향 (The Effect of LiBr Concentration on Corrosion of Absorption Refrigeration Systems Using $LiBr-H_2O$ Working Fluids)

  • 임우조;정기철
    • 한국가스학회지
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    • 제5권4호
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    • pp.33-39
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    • 2001
  • 흡수식냉동기의 작동매체로 사용되고 있는 LiBr수용액 중에서 각 구성재료인 일반구조용 압연강재, 동 및 동합금재인 Ai-Ni bronze의 부식거동에 관한 연구를 하기 위하여, 여러 가지 농도의 LiBr 수용액 중에서 각 재료에 대한 분극실험을 실시하여 부식거동을 고찰한 결과 다음과 같은 결론을 얻었다. 1) 수용액의 LiBr 농도가 증가할수록 각 재료의 분극저항은 낮아지고, 개로전위는 비전 위화되면서 부식전류밀도는 높게 배류된다. 2) 일반구조용 압연강재의 개로전위는 동 및 Al-Ni bronze의 개로전위보다 비전위화되면서 부식전류밀도는 더 높게 배류된다. 3) 동 및 Al-Ni bronze에 대한 $62\%$ LiBr 수용액 중에서의 양극분극은 활성태로 지속되지만, 천연해수 중에서의 양극분극은 활성태가 지속되다가 부동태화전류가 나타난다.

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(100) SrTi $O_3$ 단결정 기판위에 단일 액상 원료 MOCVD 법에 의한 YB $a_2$C $u_3$ $O_{7-x}$ 박막 제조 (Fabrication of YB $a_2$C $u_3$ $O_{7-x}$ film on a (100) SrTi $O_3$ single crystal substrate by single liquid source MOCVD method)

  • 전병혁;최준규;김호진;김찬중
    • 한국초전도ㆍ저온공학회논문지
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    • 제6권3호
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    • pp.16-20
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    • 2004
  • YB $a_2$C $u_3$$O_{7-x}$ (YBCO) films were deposited on (100) SrTi $O_3$ single crystal substrates by a metal organic chemical vapor deposition (MOCVD) system of hot-wall type using single liquid source. Under the condition of the mole ratio of Y(tmhd)$_3$:Ba(tmhd)$_2$:Cu(tmhd)$_2$= 1:2.1:2.9. the deposition pressure of 10 Torr. the MO source line speed of 15 cm/min. the Ar/ $O_2$ flow rate of 800/800 sccm. YBCO films were prepared at the deposition temperatures of 780∼89$0^{\circ}C$. In case of the YBCO films with 2.2 ${\mu}{\textrm}{m}$ thickness deposited for 6 minutes at 86$0^{\circ}C$. XRD pattern showed complete c-axis growth and SEM morphology showed dense and crack-free surface. The atomic ratios of Ba/Y and Cu/Ba in the film were 1.92 and 1.56. respectively. The deposition rate of the film was as high as 0.37 ${\mu}{\textrm}{m}$/min. The critical temperature ( $T_{c.zero}$) of the film was 87K. The critical current of the film was 104 A/cm-width. and the critical current density was 0.47 MA/$\textrm{cm}^2$. For the thinner film of 1.3 ${\mu}{\textrm}{m}$ thickness. the critical current density of 0.62 MA/$\textrm{cm}^2$ was obtained.d.

Residual magnetic field profiles and their current density profiles of coated conductors for fast and slow cut-off current operations

  • Sun, J.;Tallouli, M.;Shyshkin, O.;Hamabe, M.;Watanabe, H.;Chikumoto, N.;Yamaguchi, S.
    • 한국초전도ㆍ저온공학회논문지
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    • 제17권1호
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    • pp.17-20
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    • 2015
  • Coated conductor is an important candidate for power cable applications due to its high current density. Even for DC power cable transmission, we must study the transport properties of HTS tapes after slow and fast discharge. In order to evaluate relation of the magnetic field with applied current we developed a scanning magnetic field measurements system by employing a Hall probe. This work presents the measurements of the magnetic fields above a coated conductor by varying applied current pattern. In the work, a transport current of 100 A, less than the critical current, is applied to YBCO coated conductor. We measured the residual magnetic field distributions after cut off the transport current with slow and fast operations. The results show differences of the magnetic field profiles and the corresponding current profiles by an inverse solution from the magnetic field measurement between these two operations because of the hysteresis of coated conductor excited by the transport current.

구리 ECMP에서 전류밀도가 재료제거에 미치는 영향 (Effect of Current Density on Material Removal in Cu ECMP)

  • 박은정;이현섭;정호빈;정해도
    • Tribology and Lubricants
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    • 제31권3호
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    • pp.79-85
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    • 2015
  • RC delay is a critical issue for achieving high performance of ULSI devices. In order to minimize the RC delay time, we uses the CMP process to introduce high-conductivity Cu and low-k materials on the damascene. The low-k materials are generally soft and fragile, resulting in structure collapse during the conventional high-pressure CMP process. One troubleshooting method is electrochemical mechanical polishing (ECMP) which has the advantages of high removal rate, and low polishing pressure, resulting in a well-polished surface because of high removal rate, low polishing pressure, and well-polished surface, due to the electrochemical acceleration of the copper dissolution. This study analyzes an electrochemical state (active, passive, transpassive state) on a potentiodynamic curve using a three-electrode cell consisting of a working electrode (WE), counter electrode (CE), and reference electrode (RE) in a potentiostat to verify an electrochemical removal mechanism. This study also tries to find optimum conditions for ECMP through experimentation. Furthermore, during the low-pressure ECMP process, we investigate the effect of current density on surface roughness and removal rate through anodic oxidation, dissolution, and reaction with a chelating agent. In addition, according to the Faraday’s law, as the current density increases, the amount of oxidized and dissolved copper increases. Finally, we confirm that the surface roughness improves with polishing time, and the current decreases in this process.

고 에너지 밀도 펄스 변압기 설계 (Design of A High Energy Density Pulse Transformer)

  • 남상훈;박성수;하기만
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 E
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    • pp.2186-2188
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    • 1999
  • A high frequency and energy density pulse transformer is a critical component of a high voltage power supply in a traveling wave tube (TWT) amplifier system. In this paper, processes of design, manufacturing, and test of the transformer are discussed. Primary voltage of the transformer is 240 V. The transformer secondary have two outputs which are 4100 V (Helix) and 2050 V (Collector). Total output power is 860 W. Normal operating frequency of the transformer is 10 kHz. In high energy density pulse transformers, temperature rise is a main problem during its operation. From our study, it was found that resonant current due to leakage inductance and stray capacitance was the main cause of temperature rise. This happens because of the inherently high turn-ratio in high voltage transformers. Solutions to reduce stray components are presented.

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단층 초전도케이블 샘플에서 교류손실의 수치해석에 대한 연구 (A Study on Numerical Analysis of the AC Loss in a Single-layer Superconducting Cable Sample)

  • 이주영;마용호;류경우;황시돌
    • 한국전기전자재료학회논문지
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    • 제22권7호
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    • pp.606-611
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    • 2009
  • AC loss is one of the important factors for commercialization of a high temperature superconducting (HTS) cable from an economic point of view. But AC loss characteristics of the HTS-cable are not elucidated completely because of its complex structure. As an earlier stage of analyzing the AC loss in the 22.9 kV/50 MVA, 100m HTS-cable system of Korea Electric Power Corporation (KEPCO) which is now in collaboration with us, a two-dimensional (2D) numerical model, which takes into account the nonlinear conductivity properties of a high temperature superconductor, has been developed. In order to examine our 2D model, we have prepared several single-layer cable samples whose AC losses are sufficiently reliable due to their simple structure. The AC losses of the samples were experimentally investigated and then compared with our 2D model. The results show that the numerically calculated AC losses are not in good agreement with the measured ones for the cylindrical cable and deca-cable samples with low critical current density. However, the numerically calculated and measured AC losses are relatively in good agreement for the deca-cable and hex-cable samples with high critical current density, although the difference between these two loss data in the deca-cable sample tends to increase in the low current region.

Bias-Dependent Photoluminescence Analysis on InGaN/GaN MQW Solar Cells

  • Shim, Jae-Phil;Jeong, Hoonil;Choi, Sang-Bae;Song, Young Ho;Jho, Young-Dahl;Lee, Dong-Seon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.347-348
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    • 2013
  • To obtain high conversion efficiency in InGaN-based solar cells, it is critical to grow high indium (In) composed InGaN layer for increasing sun light absorption wavelength rage. At present, most InGaN-based solar cells adopt InGaN/GaN multi-quantum-well (MQW) structure for high crystalline quality of InGaN with high In composition. In this study, we fabricated and compared the performances of two types of InGaN/GaN MQW solar cells which have the 15% (SC 15) and 25% (SC 25) of In composition at quantum well layer. Although both devices showed similar dark current density and leakage current, SC 15 showed better performance under AM 1.5G illumination as shown in Fig. 1. It is interesting to note that SC 25 showed severe current density decrease as increasing voltages. As a result, it lowered short circuit current density and fill factor of the device. However, SC 15 showed steady current density and over 75 % of fill factor. To investigate these differencesmore clearly, we analyzed their photoluminescence (PL) spectra under various applied voltages as shown in Fig. 2. At the same time, photocurrent, which was generated by PL excitation, was also measured as shown in Fig. 3. Further, we investigated the relationship between piezoelectric field and performance of InGaN based solar cell varying indium composition.

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Fabrication of Oxide Thick Film for Renewable Electrical Energy Storage Technology

  • Lee, Sang-Heon
    • Transactions on Electrical and Electronic Materials
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    • 제6권4호
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    • pp.186-189
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    • 2005
  • We have fabricated superconducting HTSC ceramic thick films by chemical process. c-axis oriented HTSC thick films have been attempted bi-axially textured Ni tapes. The x-ray diffraction pattern of the HTSC thick films contained superconducting phase crystal. The critical temperature and critical current density was 110K.

열간가압 소결법에 의한 Y1Ba2Cu3Ox 초전도체의 제조 (Fabrication of Y1Ba2Cu3Ox Superconductor by Hot-pressing)

  • 하정수;한경섭;이준근
    • 한국세라믹학회지
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    • 제24권6호
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    • pp.602-604
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    • 1987
  • The high TcY1Ba2Cu3Ox superconductor has recently gained widespread interest in the scientific community. The principal problems at the present time are how to densify this material and how to raise the critical current density. To date the majority of samples have had densities of 90%(of theoretical) or less. In this study we report that we obtained density of 96% by Hot-Pressing method.

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