• 한국초전도ㆍ저온공학회논문지
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• 제9권3호
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• pp.5-8
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• 2007

All three buffer layers of $Y_2O_3$, YSZ, and $CeO_2$ have been deposited on the biaxially textured metal substrates using rf-sputtering method, The first 50-70nm thick $Y_2O_3$ films were grown epitaxially on biaxially textured metal substrates as a seed layer and followed by the diffusion barrier ${\sim}100nm$ thick YSZ and subsequent capping layer ${\sim}200nm$ thick $CeO_2$ deposited epitaxially on top of $Y_2O_3$ seed layer. The epitaxial orientation of all three layers were all (100) grown with rocking curve Full Width at Half Maximum(FWHM) of $4-5^{\circ}$ and in plane phi-scan FWHM of $6-8^{\circ}$ using X -ray diffraction analysis. The NiO phases formed during the $Y_2O_3$ seed layer deposition seem to degrade the crystallinity and roughen the surface morphology of the following layer observed by AFM(Atomic Force Microscopy). The buffered tapes were used as substrates for long length YBCO coated conductors with high critical current density $J_c$. The five multi-turn of metal tapes was employed to increase the thickness of films and production rate to compensate the low growth rate of rf-sputtering method.

• Progress in Superconductivity
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• 제4권1호
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• pp.94-98
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• 2002

Two kinds of multifilament Bi-2223／Ag tapes, which are different in the precursor calcination temperatures, were heat treated for different time (12, 20, 30, 50, 70, or 100 h) firstly to obtain varied B2223 contents, and then followed by the same pressing and sintering cycles. The relation of the 2223 phase contents after the first sintering and the transport property of the fully processed tapes was studied. The results show that 75-80% 2223 phase formed in tapes before the first cold pressing is beneficial to get a high $I_{c}$ in the final tapes. Compensating the total heat treatment time of the tapes first sintered for 20 h to the same length as that first sintered for 50 h in the subsequent sintering stages, different $I_{c}$ enhancements were observed in these two tapes. No improvement on $I_{c}$ was found in the tape made from the powder calcined at higher temperature, whereas for the tape prepared with the lower temperature calcined powder, the $I_{c}$ was increased to the same level as that first sintered for 50 h. The 2223 contents before the intermediate mechanical work is related to the residual reactants, especially to the liquid phase, which is of vital importance to the phase conversion and healing microcracks, meanwhile, to the size and distribution of the non-superconducting secondary phases. The lower temperature calcined powder resulted in slow formation of 2223 phase, but also provided more reactants and liquid phase for the further phase conversion, as a consequence, for the Improvement of $I_{c}$. c/.

• 한국지구과학회지
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• 제40권3호
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• pp.272-282
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• 2019

지진 관련 정책 입안과 수행에 우선적으로 고려되어야 할 정보가 지진 발생현황이지만, 대도시와 인구밀집 지역의 경우 높은 생활잡음으로 인해 작은 규모의 지진 발생을 정확히 인지하지 못하는 경우가 많다. 본 연구에서는 2010년부터 2017년까지 부산지역에서 발생했지만, 규모가 작아 기상청 지진목록에 수록되지 않은 미소 지진 10회를 파형의 유사성을 이용하여 검출하였고, 기존에 발생사실을 알고 있던 지진을 포함하여 총 12회의 지진을 분석에 사용하였다. 새로이 보고되는 지진은 선형을 보이면서 발생하고 있지만, 주변의 단층과 직접적으로 연관하여 해석하기에는 자료가 충분치 않다. 규모가 작은 미소 지진이 꾸준히 발생한다는 것은 지하에 지진을 일으키는 단층이 존재함을 시사하고, 부산과 같은 인구밀집 지역에서 과거 피해를 유발한 역사지진과 비슷한 규모의 지진이 발생한다면 대형 피해로 발전될 가능성이 매우 크다. 최근 우리나라에서 발생한 피해 유발 지진이 지표파열을 동반하지 않고 발생하고 있음을 고려할 때 현재 발생하고 있는 미소 지진 현황을 파악하여 지표 단층조사와 함께 지하단층을 규명하는데 활용하여야 한다.

• 한국결정성장학회지
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• 제21권5호
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• pp.199-204
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• 2011

존멜팅법을 이용해서 $(YSmNd)_{1.8}Ba_{2.4}Cu_{3.4}O_{7-x}$계 고온초전도체를 대기 중에서 용융성장실험을 하였다. 존멜팅법의 최적용융온도는 $1100^{\circ}C$였으며 성장속도는 3.5 mm/h 였다. 한 방향으로 용융성장 된 (YSN)1.8 초전도체는 XRD, 광학현미경, TEM을 이용하여 미세구조를 관찰하였으며 SQUID magnetometer와 직접전류수송법을 이용해 초전도특성을 평가하였다. 특히 용융성장 된 (YSN)1.8 초전도체의 광학현미경에 의한 미세구조 관측 결과 초전도상인 (YSN)123 matrix내에 비초전도상인 (YSN)211 inclusions이 균질하게 분포되어 있는 것이 관측되었다. 또한 용융성장 된 (YSN)1.8 초전도체는 90 K 이상의 임계온도 특성을 보였으며 액체질소 안에서 직접전류수송법으로 측정한 결과 수송전류 830 A에서 $3.93{\times}10^4$(A/$cm^2$)를 갖는 높은 임계전류밀도 특성을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 한국분말재료학회지
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• 제20권2호
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• pp.142-147
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• 2013

$YBa_2Cu_3O_{7-y}$ (Y123) powders for the fabrication of bulk superconductors were synthesized by the powder reaction method using $Y_2O_3$ (99.9% purity), $BaCO_3$ (99.75%) and CuO (99.9%) powders. The raw powders were weighed to the cation ratio of Y:Ba:Cu=1:2:3, mixed and calcined at $880^{\circ}C-930^{\circ}C$ in air with intermediate repeated crushing steps. It was found that the formation of Y123 powder was more sensitive to reaction temperature than reaction time. The calcined Y123 powder and a mixture of (Y123 + 0.25 mole $Y_2O_3$ + 1 wt.% $CeO_2$, $Y_{1.5}Ba_2Cu_3O_x$ (Y1.5)) were used as raw powders for the fabrication of poly-grain or single grain superconductors. The superconducting transition temperature ($T_{c,onset}$) of the sintered Y123 sample was 91 K and the transition width was as large as 11 K, whereas the $T_{c,onset}$ of the melt-grown Y1.5 sample was 90.5 K and the transition width was 3.5 K. The critical current density ($J_c$) at 77 K and 0 T of the sintered Y123 was 700 $A/cm^2$, whereas the $J_c$ of the top-seeded melt growth (TSMG) processed Y1.5 sample was $3.2{\times}10^4\;A/cm^2$. The magnetic flux density (H) at 77 K of the TSMG-processed Y123 and Y1.5 sample showed the 0.53 kG and 2.45 kG, respectively, which are 15% and 71% of the applied magnetic field of 3.5 kG. The high H value of the TSMG-processed Y1.5 sample is attributed to the formation of the larger superconducting grain with fine Y211 dispersion.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 춘계학술대회
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• pp.306-309
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• 2005

One of the most critical issues in sol id oxide fuel cell (SOFC)running on hydrocarbon fuels is the risk of carbon formation from the fuel gas. The simple method to reduce the risk of carbon formation from the reactions is to add steam to the fuel stream, leading to the carbon gasification react ion. However, the addition of steam to fuel is not appropriate for the auxiliary power unit (APU) and potable power generation (PPG) systems due to an increase of complexity and bulkiness. In this regard, many researchers have focused on so-called 'direct methane' operation of SOFC, which works with dry methane without coking. However, coking can be suppressed only by the operation with a high current density, which may be a drawback especially for the APU and PPG systems. The single chamber fuel cell (SC-SOFC) is a novel simplification of the conventional SOFC into which a premixed fuel/air mixture is introduced. It relies on the selectivity of the anode and cathode catalysts to generate a chemical potential gradient across the cell. Moreover it allows compact and seal-free stack design. In this study, we fabricated honeycomb type mixed-gas fuel cell (MGFC) which has advantages of stacking to the axial direction and increasing volume power density. Honeycomb-structured SOFC with four channels was prepared by dry pressing method. Two alternative channels were coated with electrolyte and cathode slurry in order to make cathodic reaction sites. We will discuss that the anode supported honeycomb type cell running on mixed gas condition.

• 한국재료학회지
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• 제23권6호
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• pp.309-315
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• 2013

$GdBa_2Cu_3O_{7-y}$(Gd123) powders were synthesized by the solid-state reaction method using $Gd_2O_3$ (99.9% purity), $BaCO_3$ (99.75%) and CuO (99.9%) powders. The synthesized Gd123 powder and the Gd123 powder with $Gd_2O_3$ addition ($Gd_{1.5}Ba_2Cu_3O_{7-y}$(Gd1.5)) were used as raw powders for the fabrication of Gd123 bulk superconductors. The Gd123 and Gd1.5 bulk superconductors were fabricated by sintering or a top-seeded melt growth (TSMG) process. The superconducting transition temperature ($T_{c,onset}$) of the sintered Gd123 was 93 K and the transition width was as large as 20 K. The $T_{c,onset}$ of the TSMG processed Gd123 was 82 K and the transition width was also as large as 12 K. The critical current density ($J_c$) at 77 K and 0 T of the sintered Gd123 and TSMG processed Gd123 were as low as a few hundreds A/$cm^2$. The addition of 0.25 mole $Gd_2O_3$ and 1 wt.% $CeO_2$ to Gd123 enhanced the $T_c$, $J_c$ and magnetic flux density (H) of the TSMG processed Gd123 sample owing to the formation of the superconducting phase with high flux pinning capability. The $T_c$ of the TSMG processed Gd1.5 was 92 K and the transition width was 1 K. The $J_cs$ at 77 K (0 T and 2 T) were $3.2{\times}10^4\;A/cm^2$ and $2.5{\times}10^4\;A/cm^2$, respectively. The H at 77 K of the TSMG-processed Gd1.5 was 1.96 kG, which is 54% of the applied magnetic field (3.45 kG).

• 한국재료학회지
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• 제22권11호
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• pp.569-574
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• 2012

Large single grain $Gd_{1.5}Ba_2Cu_3O_{7-y}$ (Gd1.5) bulk superconductors were fabricated by a top-seeded melt growth (TSMG) process using an $NdBa_2Cu_3O_{7-y}$ seed. The seeded Gd1.5 powder compacts with a diameter of 50 mm were subjected to the heating cycles of a TSMG process. After the TSMG process, the diameter of the single grain Gd1.5 compact was reduced to 43 mm owing to the volume contraction during the heat treatment. The superconducting transition temperature ($T_c$) of the top surface of the single grain Gd1.5 sample was as high as 93.5 K. The critical current densities ($J_cs$) at 77 K and 1T and 1.5 T were in ranges of 25,200-43,900 $A/cm^2$ and 10,000-23,000 $A/cm^2$, respectively. The maximum attractive force at 77 K of the sample field-cooled using an Nd-B-Fe permanent magnet (surface magnetic field of 0. 527 T) was 108.3 N; the maximum repulsive force of the zero field-cooled sample was 262 N. The magnetic flux density of the sample field-cooled at 77 K was 0.311T, which is approximately 85% of the applied magnetic field of 0.375 T. Microstructure investigation showed that many $Gd_2BaCuO_5$ (Gd211) particles of a few ${\mu}m$ in size, which are flux pinning sites of Gd123, were trapped within the $GdBa_2Cu_3O_{7-y}$ (Gd123) grain; unreacted $Ba_3Cu_5O_8$ liquid and Gd211 particles were present near the edge regions of the single grain Gd1.5 bulk compact.

• 멤브레인
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• 제32권4호
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• pp.253-263
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• 2022

본 연구에서는 하수 재이용을 위한 역삼투막 공정에서 전처리 정밀여과막(MF) 손상에 대한 누출되는 다양한 수질변화로써 막 손상 검지 방안을 제시하였다. 이를 위하여 역삼투막 유입수질 적합성 평가지표인 SDI (silt density index)를 3에서 5의 범위 내에서 막 손상 시 검지 감도를 정량화하기 위하여 전처리 분리막이 1에서 3가닥 파단에 따라 SDI는 1.92에서 6.11까지 증가한 결과를 확인할 수 있었다. 일반적으로 3을 기준으로 역삼투막 유입수질로 설정하였을 때 분리막이 3가닥까지 파단이 되어야만 막 손상 검지가 가능하다는 것을 의미하며 역삼투막의 오염은 잠재적으로 가속화되어 효율을 저하시킬 수 있다. 또한 이때 누출되는 입자성과 유기물질에 대하여 0.45 ㎛ 이상의 크기만 걸러주는 입자계수는 입도분포별 막 파단 개수에 따라 일정한 패턴을 확인할 수 없었으며, TOC 농도는 약 2배의 변화패턴으로써 SDI와의 상관관계로써 TOC가 막 손상 수질지표로써 신뢰성이 높은 것으로 확인되었다. 수질분석결과와 더불어 USEPA에서 제시하는 막 손상 검지 방법 중 압력손실시험과 이를 기반으로 LRV_DIT 모델의 적합성 평가를 한 결과 막 손상 또는 역삼투막 공정으로 유입되는 막오염물질을 신속하게 확인할 수 있는 SDI 및 TOC를 포함한 LRV_DIT 모니터링과 UCL 설정을 병행해야 한다.