• Journal of Biomedical Engineering Research
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• v.32 no.4
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• pp.305-311
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• 2011

For effective stimulation with tDCS, spatial focality of induced electrical field(EF) and current density(CD) is one of the important factors to be considered. Recently, there have been some studies to improve the spatial focality via different types of electrodes and their new configurations: some improvements using ring electrodes were reported over the conventional pad electrodes. However, most of these studies assumed isotropic conductivities in the head. In this work, we have investigated the effect of tissue anisotropy on the spatial focality of tDCS with the 4 + 1 ring electrode configuration via a 3-D high-resolution finite element(FE) head model with anisotropic conductivities in the skull and white matter. By examining the profiles of the induced EF from the head models with isotropic and anisotropic conductivities respectively, we found that the spatial focality of the induced EF significantly drops and get diffused due to tissue anisotropy. Our analysis suggests that it is critical to incorporate tissue anisotropy in the effective stimulation of the brain via tDCS.

• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.61-66
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• 1998

High quality c-axis oriented $YBa_{2}Cu_{3}O_{7}$ films were prepared using the pulsed laser deposition on $SrTiO_{3}$(100) substrate. The atomically smooth $SrTiO_{3}$surface with terraces one unit cell in height could be obtained by a high temperature annealing. $YBa_{2}Cu_{3}O_{7}$ thin films deposited on the substrates exhibited layer-by-layer growth with a c-axis unit cell height. $YBa_{2}Cu_{3}O_{7}$ thin films thus prepared showed critical temperature ${\ge}90$ K with transition width ${\le}0.6$ K, room temperature resistivity of ${\sim}300{\mu}{\Omega}cm$, and critical current density ${\sim}4.6{\times}10^{6}A/cm^{2}$ at 77 K.

• Progress in Superconductivity
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• v.3 no.1
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• pp.23-27
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• 2001

We have investigated the mixed-state magnetoresistance of high quality c-axis-oriented MgB2 thin film for magnetic field from 0.5 T to 5.0 T, applied normal to ab-plane. The temperature dependence of magnetoresistance was well described by vortex glass and fluctuation theories for different temperature regimes. We observed glassy exponent of v(z-1)~3 and upper critical field of $H_{c2}$(0)~35 T, which is consistent with previous data obtained from direct $H_{c2}$(0) measurements. Interestingly, the thermally activated flux flow region was observed to be very narrow, suggesting that the pinning strength of this compound is very strong. This finding is closely related to the recent reports that the bulk pinning is dominant in $MgB_2$and the critical current density of $MgB_2$ thin film is very high, comparable to that of cuprate superconductor. The present results further suggest that $MgB_2$is beneficial to technical applications.ons.

• Journal of the Korea Computer Industry Society
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• v.6 no.5
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• pp.757-766
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• 2005

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6T Full CMOS SRAM had been continued as the technology advances, However, conventional 6T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6T Full CMOS SRAM is $70{\sim}90F^{2}$, which is too large compared to $8{\sim}9F^{2}$ of DRAM cell. With 80nm design rule using 193nm ArF lithography, the maximum density is 72M bits at the most. Therefore, pseudo SRAM or 1T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed $S^{3}$ cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^{3}$ SRAM cell technology with 100nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.314-321
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• 2006

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6 T Full CMOS SRAM had been continued as the technology advances. However, conventional 6 T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6 T Full CMOS SRAM is $70{\sim}90\;F^2$, which is too large compared to $8{\sim}9\;F^2$ of DRAM cell. With 80 nm design rule using 193 nm ArF lithography, the maximum density is 72 Mbits at the most. Therefore, pseudo SRAM or 1 T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64 M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6 T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed S3 cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^3$ SRAM cell technology with 100 nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• Progress in Superconductivity
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• v.11 no.1
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• pp.47-51
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• 2009

For many large-scale applications of high-temperature superconducting materials, large critical current density ($J_c$) in high applied magnetic fields are required. A number of methods have been reported to introduce artificial pinning centers in $YBa_2Cu_3O_{7-{\delta}}$ films for enhancement of their $J_c$. We studied the microstructures and characteristic of $YBa_2Cu_3O_{7-{\delta}}$ films fabricated on $SrTiO_3$ (100) substrates with ZnO nanorods as pinning centers. Au catalyst nanoparticles were synthesized on STO substrates with self assembled monolayer to control the number of ZnO nanorods. The density of Au nanoparticles is approximately $240{\sim}260{\mu}m^{-2}$ with diameters of $41{\sim}49nm$. ZnO nanorods were grown on STO by hot-walled PLD with Au nanoparticles. Typical size of ZnO nanorod was around 179 nm in diameter and $2{\sim}6{\mu}m$ in length respectively. YBCO films deposited directly on STO substrates show the c-axis orientation, while YBCO films with ZnO nanorods exhibit any mixed phases without any typical crystal orientation.

• Progress in Superconductivity
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• v.5 no.1
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• pp.75-79
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• 2003

YBCO films were deposited with various thicknesses from 100nm to 1.6$\mu\textrm{m}$ on single crystal $SrTiO_3$ substrates by pulsed laser deposition (PLD). The effects of different deposition conditions, especially different deposition rates by means of changing the pulsed laser frequency up to 200Hz, on the J$_{c}$ value were studied. For YBCO film with the thickness of 200nm, the $J_{c}$ value of $2.1MA/\textrm{cm}^2$ has been achieved under the high deposition rate of 3.2nm/s (190nm/min). The $J_{c}$ can be maintained greater than $1M/\textrm{cm}^2$ with the thickness less than 1$\mu\textrm{m}$. The X-ray analysis was used to examine the texture, crystallization and surface quality. The SEM was employed to analyze the surface of YBCO, and it was shown the surface of YBCO film became rougher with increasing the thickness. There were many large singular outgrowths and networks of outgrowths on the surface of YBCO films which lowered the density of thick YBCO film. The outgrowth network was probably the a-axis YBCO corresponding to XRD $\theta$-2$\theta$scan and $\chi$-scan which were used to characterize a-axis orientation of YBCO film. The reason for J$_{c}$ declining with increasing the thickness was studied and discussed.sed.

• Progress in Superconductivity and Cryogenics
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• v.18 no.1
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• pp.37-40
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• 2016

We have investigated the addition effect of NiO magnetic nanoparticles on crystal structure, microstructure as well as superconducting properties of $MgB_2$. NiO-added $MgB_2$ samples were prepared by the solid-state reaction method. The superconducting transition temperature ($T_c$) of 37.91 K was obtained for pure $MgB_2$, and $T_c$ was found to decrease systematically on increasing the addition level of NiO. X-ray diffraction (XRD) analysis revealed that no substitution of Ni for Mg in the lattice of $MgB_2$ was occurred. The microstructural analysis shows that the pure $MgB_2$ sample consists of plate shape $MgB_2$ grains, and the grains get refined to smaller size with the addition of NiO nanoparticles. At 5 K, high values of critical current density ($J_c$) were obtained for small amount NiO-added $MgB_2$ samples as compared to pure sample. The enhancement in $J_c$ could be attributed to the refinement of $MgB_2$ grains which leads to high density of grain boundaries in NiO-added $MgB_2$ samples.

• KEPCO Journal on Electric Power and Energy
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• v.1 no.1
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• pp.157-162
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• 2015

Large scale superconducting magnetic energy storage (SMES) system requires very high magnetic energy density in its superconducting coils to enhance the energy capacity and efficiency of the system. The recent high temperature superconducting (HTS) conductors, so called 2G conductors, show very good performance under very high magnetic field so that they seem to be perfect materials for the large scale SMES coils. A general shape of the coil system with the 2G HTS conductor has been a tor oid, because the magnetic field applied perpendicularly to the surface of the 2G HTS conductor could be minimized in this shape of coil. However, a toroid coil requires a 3-dimensional computation to acquire the characteristics of its critical current density - magnetic field relations which needs very complicated numerical calculation, very high computer specification, and long calculation time. In this paper, we suggested an analytic and statistical calculation method to acquire the maximum magnetic flux density applied perpendicularly to the surface of the 2G HTS conductor and the stored energy in the toroid coil system. Although the result with this method includes some errors but we could reduce these errors within 5 percent to get a reasonable estimation of the important parameters for design process of the HTS toroid coil system. As a result, the calculation time by the suggested method could be reduced to 0.1 percent of that by the 3-dimensional numerical calculation.

• Applied Chemistry for Engineering
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• v.9 no.7
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• pp.1011-1017
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• 1998

$YBa_2Cu_3O_{6+x}(Y123)-Ag$ high-Tc superconducting wires were fabricated by plastic extrusion technique using pyrophoric synthetic and mechanical mixing powder with and without Ag addition(20 wt.%). This method involves powder preparation, plastic paste making, die extrusion, binder burn-out and the sintering process. In order to fabricate a good-quality superconducting body, it is required to use homogeneous and fine-size power as a starting materials. $Y_2O_3-BaCO_3-CuO$ precursor powders with/without Ag addition were prepared both by pyrophoric synthetic(PS) and mechanical mixing(MM) method of raw powders. The formation kinetics of the powder mixtures into Y123 phase was investigated at various temperatures and times in air atmosphere. The powder prepared by PS method was more easily converted into a Y123 phase than the MM powder. The fine size and good chemical homogeneity of the powder prepared by PS method is attributable to the fast formation into a Y123 phase. The critical current density($J_c$) of the Y123-Ag superconducting wires made by plastic extrusion method were in the range of $150A/cm^2{\sim}230A/cm^2$. depending on the charateristics of starting material powders. $J_c$ of the wire prepared by pyrophoric synthetic powder with 20 wt.% Ag addition was $230A/cm^2$.