• 제목/요약/키워드: high critical current density

검색결과 263건 처리시간 0.024초

Superconducting properties of MgB2 superconductors in-situ processed using various boron powder mixtures

  • Kang, M.O.;Joo, J.;Jun, B.H.;Kim, C.J.
    • 한국초전도ㆍ저온공학회논문지
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    • 제23권3호
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    • pp.45-50
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    • 2021
  • In this study, the effect of the size of B powder on the critical current density (Jc) of MgB2 prepared by an in situ reaction process was investigated. Various combinations of B powders were made using a micron B, ball-milled B and nano B powders. Micron B powder was reduced by ball milling and the milled B powder was mixed with the micron B or nano B powder. The mixing ratios of the milled B and micron or nano B were 100:0, 50:50 and 0:100. Non-milled micron B powder was also mixed with nano powder in the same ratios. Pellets of (2B+Mg) prepared with various B mixing ratios were heat-treated to form MgB2. Tc of MgB2 decreased slightly when the milled B was used, whereas the Jc of MgB2 increased with increasing amount of the milled B or the nano powder. The used of the milled B and nano B power promoted the formation MgB2 during heat treatment. In addition to the enhanced formation of MgB2, the use of the powders reduced the grain size of MgB2. The use of the milled and nano B powder increased the Jc of MgB2. The highest Jc was achieved when 100% nano B powder was used. The Jc enhancement is attributed to the high volume fraction of the superconducting phase (MgB2) and the large grain boundaries, which induces the flux pinning at the magnetic fields.

SMES용 초전도코일 제작 및 특성 (Fabrication and Test of a Superconducting Coil for SMES)

  • 김해종;성기철;조전욱;배준한;김석환;심기덕;이언용;권영길;류경우
    • 대한전기학회논문지:전기기기및에너지변환시스템부문B
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    • 제52권11호
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    • pp.557-562
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    • 2003
  • To develop a stable and compact small-sized superconducting magnetic energy storage (SMES) system, which provides electric power with high quality to sensitive electric loads, we fabricated a SMES coil and tested it. Because such a large-sized superconducting coil quenches far away from its critical current, the recovery current is frequently used as a stability criterion in the coil fabrication. Therefore, we first investigated the recovery current characteristics of the large current conductor, which was used in our SMES coil fabrication. The test results indicate that the recovery currents measured in the conductor are nearly identical to those based on the single wire. This implies that the recovery current is affected by the conductor's cooling condition rather than its size and current capacity. In the SMES coil test the first quench occurred at 1250 A, which is equivalent to the stored energy of about 2 MJ. It corresponds to the quench current density of about $130A/mm^2$ This value is much higher in comparison with that reported in the other work. In addition, the first quench current of the coil agrees well with the measured recovery current of the conductor having similar cooling condition with it. This means that to determine the recovery current of a conductor is, first of all, important in the design and fabrication of a large-sized superconducting coil.

$BaHfO_3$ 완충층을 사용한 IBAD MgO 기판 위에 제조된 고임계전류밀도의 $GdBa_2Cu_3O_y$ 박막 (High-$J_c$ $GdBa_2Cu_3O_y$ films on $BaHfO_3$ buffered IBAD MgO template)

  • 고경필;이정우;고락길;문승현;오상수;유상임
    • 한국초전도ㆍ저온공학회논문지
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    • 제13권1호
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    • pp.6-11
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    • 2011
  • The $BaHfO_3$ (BHO) buffer layer on the IBAD MgO template was turned to be effective for a successful fabrication of $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) films with high critical current density ($J_c$). Both the BHO buffer layers and GdBCO films were prepared by pulsed laser deposition (PLD). The effects of the PLD conditions, including substrate temperature ($T_s$), oxygen partial pressure ($PO_2$), and deposition time on the in-plane texture, surface roughness, and microstructures of the BHO buffer layers on the IBAD MgO template were systematically studied for processing optimization. The c-axis oriented growth of BHO layers was insensitive to the deposition temperature and the film thickness, while the in-plane texture and surface roughness of those were improved with increasing $T_s$ from 700 to $800^{\circ}C$. On the optimally processed BHO buffer layer, the highest $J_c$ value (77 K, self-field) of 3.68 $MA/cm^2$ could be obtained from GdBCO film deposited at $780^{\circ}C$, representing that BHO is a strong candidate for the buffer layer on the IBAD MgO template.

수정된 TFA-MOD법에 의한 (100) $SrTiO_3$ 단결정 기판 위 고 임계전류 밀도 $YBa_2Cu_3O_{7-{\delta}}$ 박막 제조 (Fabrication of high-$J_c$ $YBa_2Cu_3O_{7-{\delta}}$ thin films on (100) $SrTiO_3$ single crystal substrates by a modified TFA-MOD method)

  • 위성훈;신거명;송규정;홍계원;문승현;박찬;유상임
    • 한국초전도ㆍ저온공학회논문지
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    • 제6권1호
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    • pp.12-17
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    • 2004
  • High critical current density. $J_c$ over $1MA/cm^2$ at 77 K in a self field was successfully achieved from the YBCO film prepared on (100) $SrTiO_3$ single-crystal substrates by the TFA-MOD process. Unlike a normal TFA-MOD process, we prepared the TFA precursor solution by dissolving YBCO powder into the trifluoroacetic acid. A significant amount of the second phases, including $BaF_2$, was observed in the films fired at $700-725^{\circ}C$ for 2 h under $P(O_2)=10^{-3}$ atm and $P(H_2O)=4.2%$, most probably due to an insufficient reaction time, and hence $T_c$ was greatly degraded. However the films fired at $750-800^{\circ}C$ for 2 h were composed of strongly c-axis oriented YBCO grams without any second phases. and exhibited the $T_c$ values of 89.5 ~ 91 K with a sharp transition. With increasing the firing temperature from 750 to $800^{\circ}C$ average grain size of YBCO was increased and grain connectivity was enhanced. The highest $J_c$ value of $1.1MA/cm^2$ was obtained from the YBCO film fired at $800^{\circ}C$.

원자힘 주사현미경 TiO 탐침을 이용한 고온 초전도 단일채널 자속 흐름 트랜지스터의 제작 및 특성 해석 (Fabrication and Characterization of $High-T_c$ Superconducting Single Channel Flux Flow Transistor using the Atomic Force Microscope TiO Cantilever Tip)

  • 고석철;강형곤;임성훈;이종화;이해성;한병성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.101-104
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    • 2004
  • We have fabricated a channel of superconducting flux flow transistor(SFFT) using the voltage-biased atomic force microscope(AFM) TiO tip and performed numerical simulations for the SFFT controlled by the magnetic field with a control current. The critical current density in a channel of the fabricated SFFT was decreased with the applied current by a control line. By comparing the measured with theoretical results, we showed a possibility of fabrication of an SFFT with a nano-channel using AFM anodization process technique.

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Rf - magnetron sputtering system을 사용한 $YBa_2Cu_3O_x$ 초전도 박막의 제조 (The preparation of $YBa_2Cu_3O_x$ superconducting thin film using rf - magnetron sputtering system)

  • 박성진;김민기;최성환;최효상;황종선;한병성
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1992년도 하계학술대회 논문집 B
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    • pp.717-720
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    • 1992
  • Since the discovery of High-Tc superconducting Y-Ba-Cu-O ceramics with critical temperature of about 90K, numerous efforts to prepare supercond ucting thin films with excellent qualities such as High-Tc and critical current density have been made. The samples were deposited onto $SiO_x$ substrates heated at 540$^{\circ}C$ - 600$^{\circ}C$ in a single target rf - magnetron sputtering system. The film thickness has 2000$\AA$ - 5000 $\AA$ with a rate of 16 $\AA$/min. and distance between target and substrate was 50 mm. The films were characterized by X - ray diffraction, scanning electron microscopy and critical temperature.

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파워디바이스 패키징의 열제어 기술과 연구 동향 (Overview on Thermal Management Technology for High Power Device Packaging)

  • 김광석;최돈현;정승부
    • 마이크로전자및패키징학회지
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    • 제21권2호
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    • pp.13-21
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    • 2014
  • Technology for high power devices has made impressive progress in increasing the current density of power semiconductor, system module, and design optimization, which realize high power systems with heterogeneous functional integration. Depending on the performance development of high power semiconductor, packaging technology of high power device is urgently required for efficiency improvement of the device. Power device packaging must provide superior thermal management due to high operating temperature of power modules. Here we, therefore, review critical challenges of typical power electronics packaging today including core assembly processes, component materials, and reliability evaluation regulations.

$CCI_4$ 를 사용하여 베이스를 탄소도핑한 AlGaAs/GaAs HBT의 제작 및 특성 (Fabrication and Characteristic of C-doped Base AlGaAs/GaAs HBT using Carbontetrachloride $CCI_4$)

  • 손정환;김동욱;홍성철;권영세
    • 전자공학회논문지A
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    • 제30A권12호
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    • pp.51-59
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    • 1993
  • A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

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IC 표면 전류 분포 측정을 위한 초소형 자기장 프로브 설계 (Design of Miniaturized Magnetic Field Probe for Measurement of IC Surface Current Distribution)

  • 이승배;전영현;김병성
    • 대한전자공학회논문지TC
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    • 제46권5호
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    • pp.154-161
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    • 2009
  • 최근 들어 작은 면적에 고속으로 동작하는 여러 기능 블록이 집적됨에 따라, 고속 직접회로는 인접회로의 오동작을 유발하고, 무선 수신기의 감도를 떨어뜨리는 중요한 전자파 간섭원으로 부각되고 있다. 따라서 집적회로 내부에서 가장 주요한 전자파 방해원을 파악하기 위한 좀 더 정밀한 분석 도구가 필요하게 되었다. 이러한 필요성에 따라 본 논문에서는 직접회로의 표면에 흐르는 전류세기의 분포를 측정할 수 있는 고해상도 자기장 프로브를 반도체 공정을 이용하여 설계 및 제작하였다. 3층 금속 배선이 가능한 반도체 공정을 이용함으로써 프로브 두께를 기존 작업보다 약 10%정도로 감소시킬 수 있었다. 정자기 해석과 전자기 모의실험을 통해 프로브의 공간분해능 및 비자기장 성분에 의한 영향을 분석하였으며, 실제 직접회로의 표면 전류를 측정한 결과, $210{\mu}m$의 공간해 상도를 얻을 수 있음을 확인하였다.

Behaviors of turn-to-turn contact resistance (Rc) of various REBCO CC tapes according to applied contact pressure

  • Jeong, Chanhun;Shin, Hyung-Seop
    • 한국초전도ㆍ저온공학회논문지
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    • 제20권3호
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    • pp.15-20
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    • 2018
  • No-insulation (NI) pancake magnets are fabricated using Rare earth-Barium-Copper Oxide (REBCO) coated conductor (CC) tapes, which enabled a very compact magnet in the aspects of high critical current density ($J_c$) and high mechanical strength by removing insulation and allowing thinner stabilizer. They have also advantages such as self-quench protection. Therefore, it does not need quench detection and protection that can be very challenging in a high critical temperature ($T_c$) superconducting magnet technology. Recently, it was reported that the NI REBCO CC magnets have some drawbacks of long charging time and high field ramp loss which will be a concern in the operation of cryocooled magnets. These issues are related to the turn-to-turn contact resistivity and can be released by managing it. This is also closely related to the activity of reducing the contact joint resistance in the case of CC joints for long length CC fabrication. Therefore, in this study, the turn-to-turn contact resistance ($R_c$) at the CC contact part of differently stabilized CC tapes was measured. The behaviors of $R_c$ at CC contact parts according to the applied contact pressure were investigated. The range of $R_c$ measured for CC tapes adopted will provide fundamental data for design and fabrication of the CC NI coils.