• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.907-909
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• 2009

Low voltage operated top gated polymer transistors were fabricated with a high permittivity polymer, P(VDF-TrFE) and F8T2 as a gate dielectric and semiconducting layer, respectively. The operating voltage of transistors was effectively reduced under -10 V and typical threshold voltages were as low as -1 ~ -4 V with the reasonable charge carrier mobility of $10^{-3}cm^2$/Vs for the amorphous polymer. The large hysteresis in transfer curve was improved effectively by annealing at low temperature.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.990-992
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• 1993

Studies have been made to establish what coil design parameters have an important influence on the amplitude of interturn voltages developed in a machine winding subject to steep-fronted surges. The studies are based on a lattice-diagram model of multi conductor transmission line in a machine winding energised by a simple ramp function. Variations in interturn voltages produced by changes in insulation thickness, insulation permittivity, surge wave-front are examined and certain guidelines for avoiding high interturn voltages are evaluated.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.2
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• pp.105-112
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• 2017

In order to satisfy the diffusion of multimedia service in mobile communication and the demand for high-speed communication, it is essential to modify and improve high efficiency, wideband and nonlinear characteristic of multiband power amplifier. This research is designed to implement a single-stub matching circuit as a 2nd harmonic one that meets conditions of the Class-J power amplifier. Low characteristic impedance of the single-stub line is necessary to suit conditions of wideband Class-J. This research uses ceramic substrates having high permittivity to implement the single-stub line with low characteristic impedance, which eventually results in an amplifier satisfying the output impedance terms of Class-J in wideband frequency range. This result attributes to use of GaN HEMT packaged with a 2nd harmonic matching circuit and external fundamental circuit. The measurement results of the Class-J amplifier confirms the following characteristics: more than output power of 50 W(47 dBm) in bandwidth of 1.8~2.7 GHz(0.9GHz), maximum drain efficiency of 72.6 %, and maximum PAE characteristic of 66.5 %.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.5
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• pp.994-1000
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• 2001

With the development of electromagnetic communication technology and increased use of electromagnetic wave, the countermeasure of EMI(Electromagnetic Interference) becomes more important socially, and interest for the electromagnetic wave absorber has also increased. In this paper, we have studied characteristics of frequency dependency on complex permittivity and complex permeability according to the changes of composition rate and sintering temperature of NiCuZn ferrite also known as electromagnetic wave absorber and further looked into effect of electromagnetic wave absorption properties. From the measurement where the composition of $Fe_2O_3$ and ZnO of NiCuZn ferrite was fixed at 49 and 34 mol% respectively while composition of NiO and CuO has been varied at each test, we found out that Initial permeability and permittivity were high and the absorbing ability of electromagnetic wave recorded best with $loss tangent(=\mur"/\mur')$ displays more than 1 within the frequency band of 2MHz~9.5MHz when the composition ratio of NiO was ranged around 8.5~9.5 mol% and the sintering temperature was $1080^{\circ}C$.TEX>.

• Advanced Composite Materials
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• v.17 no.3
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• pp.235-246
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• 2008

This paper is concerned with geotextiles bonded chemically with geogrid to form a geocomposite. Geotextiles, thermally bonded and non-woven, play an important role as a separator. Also, this study investigates the resistance to the application environment of geotextile composites. Here, numerous tests have been performed and it was revealed from experimental results that thermally bonded geotextile in geosynthetic composites showed superior characteristics to that manufactured from needle punched non-woven method in terms of tensile strength, tensile strain and high separation performance. It was noted from experiments that the geotextile prepared for separation purpose and manufactured in a thermal bonding method showed relatively low permittivity so that it could be used as a smooth separator. In addition, PVA geotextile/HDPE geomembrane composites were designed and manufactured to investigate the waste landfill related properties. Numerous experiments have been performed and experimental results were summarized to evaluate practical applicability of PVA geotextile/HDPE geomembrane composites. Among the properties of proposed geomembrane composites, evaluation has been focused on the investigation of mechanical properties, AOS (apparent opening size), permittivity and ultraviolet stability.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.4
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• pp.513-520
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• 2001

In this paper, the directional coupler using three layer microstrip substrate is proposed and the design method is notified. Modified re-entrant mode coupler is the proposed structure that one layer is added on upper plane of coupled transmission lines and the floating conductor is placed on added layer's upper planes. This structure has high coupling for the increase of odd mode capacitance and also has good performance in VSWR, isolation, phase difference because the difference of effective permittivity is small in each mode. We have designed the coupler from the calculation of impedance, effective permittivity, coupling coefficient using even, odd mode analysis method. From the simulation and measurement, proposed coupler has about 2 dB more tighter coupling than conventional coupler and also has good performance in VSWR, isolation, phase difference.

• Journal of the Korean Magnetics Society
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• v.24 no.2
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• pp.56-59
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• 2014

The samples of $Ba_2CoZnFe_{12}O_{22}$ was synthesized by the solid-state reaction method. The toroids of $Ba_2CoZnFe_{12}O_{22}$ were sintered with various sintering temperature at 1050, 1100, 1150, and $1200^{\circ}C$, and studied by x-ray diffractometer, vibrating sample magnetometer, network analyzer, and Mssbauer spectrometer. From the XRD patterns, the density of samples increased with increasing sintering temperature. From the magnetic hysteresis curves up to 10 kOe at 295 K, the saturation magnetization ($M_s$) of $Ba_2CoZnFe_{12}O_{22}$ samples in various sintered at 1050, 1100, 1150 ,and $1200^{\circ}C$ were showed around $M_s$= 33.0 emu/g. However, With increasing sintering temperature, the coercivity ($H_c$) of samples decrease. Complex permeability and permittivity of samples in various sintering temperatures were measured between 100MHz to 4 GHz. With increasing sintering temperature, the permeability of samples increase.

• Journal of Advanced Navigation Technology
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• v.24 no.6
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• pp.627-632
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• 2020

In this paper, we have studied a development of a humidity sensor using a microwave sensor based on a microstrip defected ground structure coated with polyvinyl alcohol. A high-sensitivity microwave sensor, which is sensitive to the changes in the permittivity of the material under test, is designed by adding an interdigital capacitor-shaped defected ground structure to the ground plane of a microstrip line. Polyvinyl alcohol, a polymer material whose permittivity varies depending on humidity, is coated with a thin thickness on the defected ground structure of the proposed microwave sensor, and the changes in the resonance frequency and magnitude of the transmission coefficient for the microwave sensor according to humidity are measured. When relative humidity increases from 40% to 80% in 10% increments at a temperature of 25 degrees using a temperature/humidity chamber, the resonant frequency of the transmission coefficient decreases from 1.475 GHz to 1.449 GHz, and the magnitude is increased from -32.90 dB to -25.67 dB.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.14-20
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• 2023

The electrostatic chuck is a technology that uses electroadhesion to attach objects and is widely used in semiconductor and display processes. This research conducted Maxwell by varying parameters to examine the distribution and variations of chucking force in a bipolar-type ESC. The parameters that were changed include the material properties of the dielectric layer and attachment substrate, applied voltage to the electrode, and the gap and width between the electrodes. The analysis results showed that as the relative permittivity of the dielectric layer and substrate increased, the chucking force also increased, with the relative permittivity of the substrate having a greater impact on the chucking force. And increasing the applied voltage led to an increase in both the chucking force and its rate of change. Lastly, as the gap between the electrodes increased, the chucking force rapidly decreased until a certain distance, after which the decrease became less significant. On the contrary, increasing the electrode width resulted in a rapid increase in the chucking force until a certain width, beyond which the increase became less pronounced, eventually converging to a chucking force of 1700 Pa. This paper is expected to have high potential for the development and research of ESC for OLED deposition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.1-4
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• 2008

The electrical characteristics of polycrystalline silicon (poly-Si) thin film transistor (TFT) crystallized by excimer laser annealing (ELA) method were evaluated, The polycrystalline silicon thin-film transistor (poly-Si TFT) has higher electric field-effect-mobility and larger drivability than the amorphous silicon TFT. However, to poly-Si TFT's using conventional processes, the temperature must be very high. For this reason, an amorphous silicon film on a buried oxide was crystallized by annealing with a KrF excimer laser (248 nm)to fabricate a poly-Si film at low temperature. Then, High permittivity $HfO_2$ of 20 nm as the gate-insulator was deposited by atomic layer deposition (ALD) to low temperature process. In addition, the solid phase crystallization (SPC) was compared to the ELA method as a crystallization technique of amorphous-silicon film. As a result, the crystallinity and surface roughness of poly-Si crystallized by ELA method was superior to the SPC method. Also, we obtained excellent device characteristics from the Poly-Si TFT fabricated by the ELA crystallization method.