• 제목/요약/키워드: high Permittivity

검색결과 231건 처리시간 0.024초

짧은 길이 전송선로를 가지는 Hi-Z Low-Z에 의한 마이크로스트립 필터 (Microstrip Filter by Means of Hi-Z Low-Z Having Short Length Transmission Lines)

  • 이봉수;이사원
    • 한국컴퓨터정보학회논문지
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    • 제3권3호
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    • pp.107-112
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    • 1998
  • 본 논문에서는 마이크로스트립 선로로 제작이 쉽고, 스터브를 사용한 필터보다 적은 공간을 차지하는 Hi-Z, Low-Z 필터를 사용하여 마이크로스트립 필터를 설계.제작하였다. 이 필터는 선로의 전기적 길이가 매우 짧은 경우. 즉 Bl<$\pi$/4의 조건에서, 저역통과기본형의 직렬 인덕터일 때 고 임피던스 선로부로 병렬 커패시터를 저 임피던스 선로부로 대치할 수 있다. 이렇게 대치된 각 단을 마이크로스트립 선로로 설계하기 위해 주어진 마이크로스트립의 실효 유전율을 구해서 각 단의 폭과 길이를 계산하고 필터 설계에 사용하였다. 또한, 설계된 필터를 Touchstone의 이론치와 제작된 필터의 실험치를 비교하여 응답특성을 분석하였다.

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$LiNbO_3$단결정 성장 및 온도에 따른 압전 특성 평가 (Growth of $LiNbO_3$ single crystals and evaluation of the dependence of its piezoelectric properties on temperature)

  • 정화구;김병국;강길영;윤종규
    • 한국결정성장학회지
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    • 제6권2호
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    • pp.155-165
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    • 1996
  • Growth of $LiNbO_3$ single crystal by Czochralski method was carried out to study the piezoelectric effects. Piezoelectric coefficients and elastic compliances of the $LiNbO_3$ single crystal were determined by the resonance method of length-extentional mode of bar resonator from the room temperature up to $100^{\circ}C$. Two dielectric constants of $LiNbO_3$ were also determined by measuring the capacitance of the plate specimen. Measured constants were piezoelectric coefficients $d_{15},d_{22},d_{31},d_{33}$ elastic compliances $s^E_{11},s^E_{33},2s^E_{13}+2s^E_{44},s^E_{14}$ and dielectric constants $K^T_{11},K^T_{33}$. As temperature increased, elastic compliances changed very slowly while piezoelectric coeffiecients and dielectric constant $K^T_{33}$ changed very rapidly. Electromechanical coupling constant of zyw ($45^{\circ}C$)-bar was as high as 0.51 in room temperature and nearly constant up to $1000^{\circ}C$. The increase of piezoelectric coefficients was mainly due to the increase of dielectric permittivity.

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프렉탈 처리에 의한 BST 박막의 특성에 관한 연구 (A Study on the Characteristics of BST Thin Films Using Fractal Process)

  • 기현철;장동환;홍경진;오수홍;김태성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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    • pp.34-38
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    • 2000
  • Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at $150[^{\circ}C]$ for 5 minutes. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics by Fractal Process. Thickness of BST ceramics thin films are about $2000{\AA}$. Dielectric constant and loss of thin films was little decreased at 1[KHz] - 1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

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Variation of Dielectric Constant with Various Particle Size and Packing Density on Inkjet Printed Hybrid $BaTiO_3$ Films

  • Lim, Jong-Woo;Kim, Ji-Hoon;Yoon, Young-Joon;Yoon, Ho-Gyu;Kim, Jong-Hee
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.271-271
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    • 2010
  • $BaTiO_3$(BT) has high permittivity so that has been applied to dielectric and insulator materials in 3D system-level package integration. In order to achieve excellent performance of device, the BT layer should be highly dense. In this study, BT thick films were prepared by the inkjet printing method. And these films were cured at $280^{\circ}C$ after infiltration of polymer resin. As a result, we have successfully fabricated not only the inkjet-printed hybrid BT film but also metal-insulator-metal(MIM) capacitor without sintering process. Changes in the dielectric constant of BT hybrid film with particle size and packing density were investigated. The dielectric constant was increased with increasing packing density and particle size. Further, the BT hybrid film using two different size particles had even higher packing density and dielectric constant.

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에어로졸데포지션법을 이용한 $BaTiO_3$ 박막의 상온 코팅 (Room-Temperature Fabrication of Barium Titanate Thin Films by Aerosol Deposition Method)

  • 오종민;남송민
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.31-31
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    • 2008
  • 고주파 잡음 발생과 고집적화 문제 해결을 위해 고용량 디커플링 캐패시터를 기판에 내장하는 연구가 활발히 진행되고 있다. 본 연구에서는 초고주파 환경에서 고용량 기판 내장형 디커플링 캐패시터로의 응용을 위해 $BaTiO_3$박막을 에어로졸 데포지션 법을 이용하여 12~0.2 ${\mu}m$의 두께로 제조하였고 그 유전특성을 조사하였다. 그결과, 1 MHz에서 permittivity가 70, loss tangent은 3% 이하였으며, capacitance density는 $1{\mu}m$의 두께에서 59 nF/$cm^2$이었다. 하지만, 박막의 두께가 $1{\mu}m$ 이하에서는 XRD를 통해 결정성이 확인 되었음에도 큰 누설전류로 인해 유전특성을 확인할 수 없었다. 이 누설전류의 발생 원인을 조사하기 위해 $BaTiO_3$박막의 표면의 미세구조를 SEM으로 관찰한 결과 여러 결함들이 확인되었으며, 또한 전극 직경의 크기를 1.5 mm에서 0.33 mm로 작게 변화시킴으로서 그 유전특성을 조사하여 박막의 불균일성과 박막화의 가능성을 확인하였다.

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Decomposition of PVC and Ion Exchange Resin in Supercritical Water

  • Kim Jung-Sung;Lee Sang-Hwan;Park Yoon-Yul;Yasuyo Hoshikawa;Hiroshi Tomiyasu
    • 한국환경과학회지
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    • 제14권10호
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    • pp.919-928
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    • 2005
  • This study introduces the development of new supercritical water oxidation(SCW)(multiple step oxidation) to destruct recalcitrant organic substances totally and safely by using sodium nitrate as an oxidant. This method has solved the problems of conventional SCW, such as precipitation of salt due to lowered permittivity, pressure increase following rapid rise of reaction temperature, and corrosion of reactor due to the generation of strong acid. Destruction condition and rate in the supercritical water were examined using Polyvinyl Chloride(PVC) and ion exchange resins as organic substances. The experiment was carried out at $450^{\circ}C$ for 30min, which is relatively lower than the temperature for supercritical water oxidation $(600-650^{\circ}C)$. The decomposition rates of various incombustible organic substances were very high [PVC$(87.5\%)$, Anion exchange resin$(98.6\%)$, Cationexchange resin$(98.0\%)$]. It was observed that hetero atoms existed in organic compounds and chlorine was neutralized by sodium (salt formation). However, relatively large amount of sodium nitrate (4 equivalent) was required to raise the decomposition ratio. For complete oxidation of PCB was intended, the amount of oxidizer was an important parameter.

Non-Invasive in vivo Loss Tangent Imaging: Thermal Sensitivity Estimation at the Larmor Frequency

  • Choi, Narae;Kim, Min-Oh;Shin, Jaewook;Lee, Joonsung;Kim, Dong-Hyun
    • Investigative Magnetic Resonance Imaging
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    • 제20권1호
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    • pp.36-43
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    • 2016
  • Visualization of the tissue loss tangent property can provide distinct contrast and offer new information related to tissue electrical properties. A method for non-invasive imaging of the electrical loss tangent of tissue using magnetic resonance imaging (MRI) was demonstrated, and the effect of loss tangent was observed through simulations assuming a hyperthermia procedure. For measurement of tissue loss tangent, radiofrequency field maps ($B_1{^+}$ complex map) were acquired using a double-angle actual flip angle imaging MRI sequence. The conductivity and permittivity were estimated from the complex valued $B_1{^+}$ map using Helmholtz equations. Phantom and ex-vivo experiments were then performed. Electromagnetic simulations of hyperthermia were carried out for observation of temperature elevation with respect to loss tangent. Non-invasive imaging of tissue loss tangent via complex valued $B_1{^+}$ mapping using MRI was successfully conducted. Simulation results indicated that loss tangent is a dominant factor in temperature elevation in the high frequency range during hyperthermia. Knowledge of the tissue loss tangent value can be a useful marker for thermotherapy applications.

Non-Overlapped Single/Double Gate SOI/GOI MOSFET for Enhanced Short Channel Immunity

  • Sharma, Sudhansh;Kumar, Pawan
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제9권3호
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    • pp.136-147
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    • 2009
  • In this paper we analyze the influence of source/drain (S/D) extension region design for minimizing short channel effects (SCEs) in 25 nm gate length single and double gate Silicon-on-Insulator (SOI) and Germanium-on-Insulator (GOI) MOSFETs. A design methodology, by evaluatingm the ratio of the effective channel length to the natural length for the different devices (single or double gate FETs) and technology (SOI or GOI), is proposed to minimize short channel effects (SCEs). The optimization of non-overlapped gate-source/drain i.e. underlap channel architecture is extremely useful to limit the degradation in SCEs caused by the high permittivity channel materials like Germanium as compared to that exhibited in Silicon based devices. Subthreshold slope and Drain Induced Barrier Lowering results show that steeper S/D gradients along with wider spacer regions are needed to suppress SCEs in GOI single/double gate devices as compared to Silicon based MOSFETs. A design criterion is developed to evaluate the minimum spacer width associated with underlap channel design to limit SCEs in SOI/GOI MOSFETs.

Sol-Gel 법에 의한 $TiO_2$ 박막의 제조 및 물성에 관한 연구 (A study on the fabrication and properties of $TiO_2$ thin films by Sol-Gel Method)

  • 유도현;김진수;강대하;김용혁;이덕출
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1992년도 추계학술대회 논문집
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    • pp.59-62
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    • 1992
  • In this study, $TiO_2$ thin films are fabricated by Sol-Gel method and dielectric, electric and humidity sensing properties have been investigated. The structure of Sol can be changed by controlling for hydrolysis reaction condition. The uniformity of the surface on $TiO_2$ thin films is confirmed by SEM. The permittivity of $TiO_2$ thin films increases according to heat treatment temperature, whereas the conductivity of $TiO_2$ thin films decreases according to heat treatment temperature, As the results of measuring humidity sensing properties of $TiO_2$ thin films fabricated as humidity sensor, it is confirmed to have good humidity sensing properties in high humidity and low frequency.

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차량용 텔레매틱스 안테나 (Telematics Antenna for Vehicles)

  • 김해연;이병제;양성현
    • 한국컴퓨터산업학회논문지
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    • 제5권2호
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    • pp.331-336
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    • 2004
  • 본 논문은 GPS/GSM 이중대역으로 차량 내부 장착용 텔레매틱스 안테나를 제안하였다. 고유 전율을 가지는 유전체를 사용하지 않으며 두 안테나를 같은 평면에 1mm의 두께를 가지는 fr4기판 위에 설계를 하였다. 이러한 방법으로 제작비용의 절감과 제작공정의 간소화를 추구하였다 GSM 대역은 평면 역 F형 안테나(PIFA)로 구현하였고 GPS 대역의 안테나를 마이크로스 트립 안테나(MSA)로 설계한 PIFA-MSA를 제안하였다. PIFA-MSA는 포트간 격리도 특성을 고려하여 상용 안테나보다 낮게 구현하면서 두 안테나간 편파를 수직으로 배열하여 격리도 특성을 극대화했으며 설계규격 또한 만족 시켰다.

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