• 한국세라믹학회지
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• 제44권7호
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• pp.387-392
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• 2007

Thermal conductivities in $La_2Ce_2O_7-Gd_2Ce_2O_7-Y_2Ce_2O_7$ ternary system have been investigated. Pyrochlore phases formed at all ternary compositions and their sinterbilities were decreased with La addition. Thermal conductivities showed a minimum value at $La_2Ce_2O_7$ with moderate increases as $Y^{3+}$ and $Gd^{3+}$ ions replaced $La^{3+}$. Thermal expansion anomaly observed in $La_2Ce_2O_7$, which might be detrimental to TBC application, were suppressed by $Y^{3+}$ and $Gd^{3+}$ additions, with resultant thermal conductivities, $1.3{\sim}1.5 W/mK$ at $1000^{\circ}C$.

• 한국수소및신에너지학회논문집
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• 제17권1호
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• pp.69-74
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• 2006

Thick film $H_2$ sensors were fabricated using $SnO_2$ loaded with $Ag_2O$ and $PtO_x$. The composition that gave the highest sensitivity for $H_2$ was in the weight% ratio of $SnO_2 : PtO_x : Ag_2O$ as 93 : 1 : 6. The nano-crystalline powders of $SnO_2$ synthesized by sol-gel method were screen printed with $Ag_2O$ and $PtO_x$ on alumina substrates. The fabricated sensors were tested against gases like $H_2$, $CH_4$, $C_3H_8$, $C_2H_5OH$ and $SO_2$. The composite material was found sensitive against $H_2$ at the working temperature $130^{\circ}C$, with minor interference of other gases. The $H_2$ gas as low as 100 ppm can be detected by the present fabricated sensors. It was found that the sensors based on $SnO_2-Ag_2O-PtO_x$ system exhibited the high performance, high selectivity and very short response time to $H_2$ at ppm level. These characteristics make the sensor to be a promising candidate for detecting low concentrations of $H_2$.

• 한국세라믹학회지
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• 제14권3호
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• pp.182-186
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• 1977

Compression creep of polycrystalline magnesia at about 1$600^{\circ}C$ under 5-40kg/$\textrm{cm}^2$ was examined, and also the effects on it of minor additives such as B2O3, CaO and SiO2 were examined. The high temperature creep of high purity magnesia was primarily controlled by the Nabarro-Herring type lattice diffusion of Mg in magnesia. B2O3 was included in the molten state and showed on increasing B2O3 contents. Some of the CaO and SiO2 were also included in the molten state, promoted the grain boundary sliding, so that creep rate was increased with an increasing content of them.

• 마이크로전자및패키징학회지
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• 제19권2호
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• pp.73-78
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• 2012

The chemical, electrical, and optical properties of ZnO and Al-doped ZnO films after high temperature annealing were studied. The resistivity increased significantly after annealing at $600^{\circ}C$ under $10^{-10}$ Torr atmosphere. The mechanism of the resistivity change was explored using photoemission spectroscopy and photoluminescence spectrometer. The results indicated that the amount of oxygen deficient region O-Zn bonds decreased and oxygen vacancy was decreased after the high temperature vacuum annealing. The increase in the resistivity of ZnO and Al-doped ZnO films was resulted from the decrease in carrier concentration due to a decrease in the amount of oxygen deficiency.

• 한국결정성장학회지
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• 제11권3호
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• pp.85-88
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• 2001

광소자 응용에 적합한 고품질 $TiO_2$ 단결정을 성장 시키기 위하여 부유대용융법 성장장치에 고압의 산소를 인가하여 결정을 성장시켰다. 0.3,0.4,0.5,와 0.8MPa의 높은 산소압을 각각 인가하여 성장 시킨$TiO_2$ 단결정은 투명하고 어두운 청색을 띄었다. 성장된 결정의 내부구조를 평가한 결과 소경각경계의 존재는 성장 시 인가해준 산소압력에 따라 그 정도가 변화하였고,특히,0.5MPa 산소압력 하에서 성장된 $TiO_2$ 단결정은 소경각경계가 존재하지 않으며 광학적 성질이 우수한 고품위 단결정으로 평가되어 광소자로써 응용이 적합하다고 사료된다.

• 한국결정성장학회지
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• 제11권5호
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• pp.231-237
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• 2001

Etch rates up to 120 nm/min for $Ta_{2}O_{5}$ were achieved in both $SF_{6}/Ar$ and $Cl_{2}/Ar$ discharges. The effect of ultraviolet (UV) light illumination during ICP etching on $Ta_{2}O_{5}$ etch rate in those plasma chemistries was examined and UV illumination was found to produce significant enhancements in $Ta_{2}O_{5}$ etch rates most likely due to photoassisted desorption of the etch products. The effects of ion flux, ion energy, and plasma composition on (Ba, Sr)$TiO_3$ etch rate were examined and maximum etch rate ~90 nm/min was achieved in $Cl_{2}/Ar$ ICP discharges while $CH_{4}/H_{2}/Ar$ chemistry produced extremely low etch rates (${\leq}10\;nm/min$) under all conditions.

• 전기화학회지
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• 제14권2호
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• pp.117-124
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• 2011

We demonstrate a new surface modification of high-voltage lithium cobalt oxide ($LiCoO_2$) cathode active materials for lithium-ion batteries. This approach is based on exploitation of a polarity-tuned gel polymer electrolyte (GPE) coating. Herein, two contrast polymers having different polarity are chosen: polyimide (PI) synthesized from thermally curing 4-component (pyromellitic dianhydride/biphenyl dianhydride/phenylenediamine/oxydianiline) polyamic acid (as a polar GPE) and ethylene-vinyl acetate copolymer (EVA) containing 12 wt% vinyl acetate repeating unit (as a less polar GPE). The strong affinity of polyamic acid for $LiCoO_2$ allows the resulting PI coating layer to present a highly-continuous surface film of nanometer thickness. On the other hand, the less polar EVA coating layer is poorly deposited onto the $LiCoO_2$, resulting in a locally agglomerated morphology with relatively high thickness. Based on the characterization of GPE coating layers, their structural difference on the electrochemical performance and thermal stability of high-voltage (herein, 4.4 V) $LiCoO_2$ is thoroughly investigated. In comparison to the EVA coating layer, the PI coating layer is effective in preventing the direct exposure of $LiCoO_2$ to liquid electrolyte, which thus plays a viable role in improving the high-voltage cell performance and mitigating the interfacial exothermic reaction between the charged $LiCoO_2$ and liquid electrolytes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.78-78
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• 2013

Recently, many platinoid metals like platinum and ruthenium have been used as an electrode of microelectronic devices because of their low resistivity and high work-function. However the material cost of Ru is very expensive and it usually takes long initial nucleation time on SiO2 during chemical deposition. Therefore many researchers have focused on how to enhance the initial growth rate on SiO2 surface. There are two methods to deposit Ru film with atomic layer deposition (ALD); the one is thermal ALD using dilute oxygen gas as a reactant, and the other is plasma enhanced ALD (PEALD) using NH3 plasma as a reactant. Generally, the film roughness of Ru film deposited by PEALD is smoother than that deposited by thermal ALD. However, the plasma is not favorable in the application of high aspect ratio structure. In this study, we used a bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a metal organic precursor for both thermal and plasma enhanced ALDs. In order to reduce initial nucleation time, we use several methods such as Ar plasma pre-treatment for PEALD and usage of sacrificial RuO2 under layer for thermal ALD. In case of PEALD, some of surface hydroxyls were removed from SiO2 substrate during the Ar plasma treatment. And relatively high surface nitrogen concentration after first NH3 plasma exposure step in ALD process was observed with in-situ Auger electron spectroscopy (AES). This means that surface amine filled the hydroxyl removed sites by the NH3 plasma. Surface amine played a role as a reduction site but not a nucleation site. Therefore, the precursor reduction was enhanced but the adhesion property was degraded. In case of thermal ALD, a Ru film was deposited from Ru precursors on the surface of RuO2 and the RuO2 film was reduced from RuO2/SiO2 interface to Ru during the deposition. The reduction process was controlled by oxygen partial pressure in ambient. Under high oxygen partial pressure, RuO2 was deposited on RuO2/SiO2, and under medium oxygen partial pressure, RuO2 was partially reduced and oxygen concentration in RuO2 film was decreased. Under low oxygen partial pressure, finally RuO2 was disappeared and about 3% of oxygen was remained. Usually rough surface was observed with longer initial nucleation time. However, the Ru deposited with reduction of RuO2 exhibits smooth surface and was deposited quickly because the sacrificial RuO2 has no initial nucleation time on SiO2 and played a role as a buffer layer between Ru and SiO2.

• Bulletin of the Korean Chemical Society
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• 제33권8호
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• pp.2567-2573
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• 2012

We successfully synthesized $Fe_3O_4@SiO_2$ nanoparticles with ultrathin silica layer of $1.0{\pm}0.5$ nm that polyethyleneimine (PEI) with low molecular weight of 2.0-4.0 kDa was covalently conjugated with the resulting $Fe_3O_4@SiO_2$ nanoparticles by silane coupling reaction. The PEI-$Fe_3O_4@SiO_2$ nanoparticles were further used as gene delivery vector for a human fibroblast cell (IMR-90) line. Gene transfection efficiency of the PEI-$Fe_3O_4@SiO_2$ complexes did not increase remarkably after magnetofection; however, the addition of Lipofectamine 2000 significantly increased the transfection efficiency of the PEI-$Fe_3O_4@SiO_2$ complexes. We believe that the present approach could be utilized for magnetofection as alternative to $Fe_3O_4$ nanoparticles conjugated with the PEI of high molecular weight thanks to its relatively low cytotoxicity and high transfection efficiency.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1997년도 제26회 추계학술대회
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• pp.93-99
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• 1997

High Temperature wear behavior of plasma sprayed ZrO$_2$ and MoS$_2$, $Fe_2O_3$ coatings were investigated for high temperature wear resistance applications. The MoS$_2$, $Fe_2O_3$ added powders containing 2.5, 5.0, 7.5, 10.0 mol% of $MoS_2$, $Fe_2O_3$ for plasma spray were made by spray drying method. Wear test were performed at temperature ranges from room temperature to 600$\circ$C. The microstructural change of coatings and the worn. surface were examined by SEM and XRD. In ZrO$_2$ coating, the coefficient of friction and wear amount of room temperature to 400$\circ$C was increased with temperature and decreased with temperature over 400$\circ$C. The coefficient of friction and wear amount of MoS$_2$ added coatings were increased with temperature, but those of $Fe_2O_3$ added coatings had lower coefficient of friction and higher wear resistance than ZrO$_2$ coating.