• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.26-26
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• 2000

High quality epitaxial Y2O3 thin films were prepared on Si(111) and (001) substaretes by using ion beam assisted deposition. As a substrate, clean and chemically oxidized Si wafers were used and the effects of surface state on the film crystallinity were investigated. The crystalline quality of the films were estimated by x-ray scattering, rutherford backscattering spectroscopy/channeling, and high-resolution transmission electron microscopy (HRTEM). The interaction between Y and Si atoms interfere the nucleation of Y2O3 at the initial growth stage, it could be suppressed by the interface SiO2 layer. Therefore, SiO2 layer of the 4-6 layers, which have been known for hindering the crystal growth, could rather enhance the nucleation of the Y2O3 , and the high quality epitaxial film could be grown successfully. Electrical properties of Y2O3 films on Si(001) were measured by C-V and I-V, which revealed that the oxide trap charge density of the film was 1.8$\times$10-8C/$\textrm{cm}^2$ and the breakdown field strength was about 10MV/cm.

• Journal of The Korean Society of Grassland and Forage Science
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• v.22 no.1
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• pp.51-58
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• 2002

PSI-H is an intrinsic membrane protein known to be essential for efficient electron flow in PSI complex. We isolated a cDNA clone encoding a PSI-H subunit homolog from Chinese cabbage (Brassica campestris L.). The cDNA, designated bpsaH, had an insert of 435 bp and a full open reading frame that would encode a protein of 145 amino acids. The amino acid sequence deduced from the cDNA sequence is 79.3% identical to that of spinach, suggesting the cDNA most likely encodes Chinese cabbage PSI-H subunit. The bpasH was expressed at high level in leaf tissue and low level in flower bud, whereas it was undetectable in root tissue.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.259-260
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• 2006

This study was progressed to value of Bi2212 tubes uniformity depend on cooling conditions. The tube from 150 mm in length, 30 mm in O.D., 20 mm in I.D., 5 mm in thickness was combined with electrodes by 3 sections. The tube from 60, 70 mm in length, 30, 50 mm in O.D., 20.4, 40.4 mm in I.D., 4.8 mm in thickness was in controled of cooling rate by a heat exchanger. Bi2212 tubes were fabricated by Centrifugal Forming Process (CFP) and they were annealed at $840^{\circ}C$ for 80 h in oxygen atmosphere. The tube from 150 mm in length was analyzed by EFDLab of NIKA to show cooling rate and temperature distributions. When the tube was cooled for 100s, the temperature distributions was $663^{\circ}C$ in the middle, $500{\sim}647^{\circ}C$ in inlet, $598{\sim}647^{\circ}C$ in the other side. Electric characteristics from $I_c$ was 450 A in the middle, 650 A in inlet, 600 A in the other side. Electric characteristics by a heat exchanger showed the more fast cooling rate, the more high $I_c$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.101-105
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• 2024

4H-SiC power metal-oxide-semiconductor field effect transistors (MOSFETs) have been developed to achieve lower specific-on-resistance (R_on,sp), and the gate oxides have been thermally grown. The poor channel mobility resulting from the high interface trap density (D_it) at the SiO₂/4H-SiC interface significantly affects the higher switching loss of the power device. Therefore, the development of novel fabrication processes to enhance the quality of the SiO₂/4H-SiC interface is required. In this paper, NO post-oxidation annealing (POA) by using the conditions of N₂ diluted NO at a high temperature (1,300℃) is proposed to reduce the high interface trap density resulting from thermal oxidation. The NO POA is carried out in various NO ambient (0, 10, 50, and 100% NO mixed with 100, 90, 50, and 0% of high purity N₂ gas to achieve the optimized condition while maintaining a high temperature (1,300℃). To confirm the optimized condition of the NO POA, measuring capacitance-voltage (C-V) and current-voltage (I-V), and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) are employed. It is confirmed that the POA condition of 50% NO at 1,300℃ facilitates the equilibrium state of both the oxidation and nitridation at the SiO₂/4H-SiC interface, thereby reducing the D_it.

• Journal of IKEEE
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• v.11 no.4
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• pp.272-278
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• 2007

In this paper, we report on the 2D (two-dimensional) simulation result of the DC (direct current) electrical and thermal characteristics of AlGaN/GaN HEMTs (high electron mobility transistors) grown on Si substrate, in comparison with those grown on sapphire and SiC (silicon carbide) substrate, respectively. In general, the electrical properties of HEMT are affected by electron mobility and thermal conductivity, which depend on substrate material. For this reason, the substrates of GaN-based HEMT have been widely studied today. The simulation results are compared and studied by applying general Drift-Diffusion and thermal model altering temperature as 300, 400 and 500 K, respectively. With setting T=300 K and $V_{GS}$=1 V, the $I_{D,max}$ (drain saturation current) were 189 mA/mm for sapphire, 293 mA/mm for SiC, and 258 mA/mm for Si, respectively. In addition, $G_{m,max}$ (maximum transfer conductance) of sapphire, SiC, Si was 38, 50, 31 mS/mm, respectively, at T=500 K.

• Microbiology and Biotechnology Letters
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• v.19 no.5
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• pp.433-438
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• 1991

The plasmid pSY130-14 for the high production of phenylalanine is a temperaturecontrollable expression vector composed of the $P_R$ and the $P_L$ promoter and a temperature sensitive repressor, $cI_{857}$ of bacteriophage lambda. Strain AT2471 harbouring plasmid pSY13O- 14 is induced the phenylalanine production by shifting up the incubation temperaure to $38.5^{\circ}C$. Plasmid stability of E. coli AT2471 harbouring pSY130-14 was very low, it was about 30% after 48 h cultivation at $38.5^{\circ}C$ without kanamycin. The plasmid disappeared immediately at $40^{\circ}C$ without kanamycin, and at $40^{\circ}C$ adding kanamycin, the plasmid stability decreased at the beginning, but rose with the extension of the culture time. For the improvement of plasmid stability, the plasmid obtaind was designated as pSY15O-1 by changing origin region (ori) pACYC 177 of pSY130-14 for ori pSC101. E. coli AT2471 harbouring pSY150-1 was stable at $38.5^{\circ}C$ without tetracycline, and the plasrnid stability was about 40% after 48 h cultivation at $40^{\circ}C$.

• Composites Research
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• v.30 no.2
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• pp.116-125
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• 2017

The purpose of this study is to develop silicon carbide fiber showing an excellent mechanical properties under highly oxidative conditions at high temperature. Polycarbosilane(PCS) as a preceramic precursor was used for making the SiC fiber. PCS fiber was taken by melt spinning method followed by melting the PCS at $300{\sim}350^{\circ}C$ in N2 gas. The Curing of PCS fiber was carried out in air oxygen chamber, prior to high temperature pyrolysis. Degree of cure was calculated by characteristic peak's ratio of Si-H to $Si-CH_3$ in FT-IR spectra before and after curing of PCS fiber. The properties of SiC fiber was affected greatly by the degree of cure. The SiC fiber produced by controlling fiber tension during heat treatment showed good properties. The SiC fiber exposed to $1000^{\circ}C$ at air from 1 min. up to maximum 50 hrs showed around 60% reduction in tensile strength. We found that large amount of carbon content on the fiber surface after long-term exposure has resulted in lower tensile strength.

• Elastomers and Composites
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• v.34 no.1
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• pp.3-10
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• 1999

Kinetics of solution photopolymerization of acrylonitrile(AN) with sensitizer, such as $NaSCN,\;KSCN,\;Ba(SCN)_2,\;NH_4SCN,\;ZnCl_2$ and $Na_2SeO_3$, were studied using UV crosslinker at various monomer concentrations($1.8{\sim}7.58mo1/1$), sensitizer concentrations($10{\sim}60%$), reaction temperature($10{\sim}70^{\circ}C$), energy intensities($1,000{\sim}9,900{\mu}J/cm^2$) at isothermal condition under nitrogen atmosphere. Under the irradiation of high pressure mercury lamp(${\lambda}=365nm$). High conversion and uniform molecular weight were obtained compare to thermal polymerization at reaction temperature of $50^{\circ}C$, reaction time of 3hr and 50% NaSCN without any initiator. Their kinetic model was as follows : $R_p=0.0142[M]^{0.82}[I]^{0.49}[S]^{0.52}$ exp(-1.33/RT).

• Journal of the Korean Ceramic Society
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• v.24 no.2
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• pp.186-192
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• 1987

ZrO2 powders having high purity were prepared from domestic zircon sand using the caustic fusion method and the soda ash sintering process. In the caustic fusion method, ZrO2 recovery was reached to 96% when 100/140 mesh zircon was reacted with NaOH at the NaOH/Zircon mole ratio 6 and at 650$^{\circ}C$ for 2 hours. And in the soda ash sintering process, ZrO2 was recovered to 88.5% when -325 mesh zircon was reacted with Na2CO3 at the Na2CO3/Zircon mole ratio 1.1 and 1050$^{\circ}C$ for 2 hours. In both cases, Zr component was extracted to ZrOCl2, subsequently crystallized to ZrOCl2$.$8H2O to increase the purity, and converted to ZrO2 by precipitation. And to increase the sinter ability of powder, Cl- ion was removed and strong agglomeration was avoided by methanol distribution of Zr(OH)4 precipitates.

• Journal of Dairy Science and Biotechnology
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• v.34 no.4
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• pp.271-278
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• 2016

The main purpose of milk heat-treatment is to improve milk safety for consumer by destroying foodborne pathogens. Secondly, heat-treatment of milk is to increase maintaining milk quality by inactivating spoilage microorganisms and enzymes. Pasteurization is defined by the International Dairy Federation (IDF, 1986) as a process applied with the aim of avoiding public health hazards arising from pathogens associated with milk, by heat treatment which is consistent with minimal chemical, physical and organoleptic changes in the product. Milk pasteurization were adjusted to $63{\sim}65^{\circ}C$ for 30 minutes (Low temperature long time, LTLT) or $72{\sim}75^{\circ}C$ for 15 seconds (High temperature short time, HTST) to inactivate the pathogens such as Mycobacterium bovis, the organism responsible for tuberculosis. Ultra-high temperature processing (UHT) sterilizes food by heating it above $135^{\circ}C$ ($275^{\circ}F$) - the temperature required to destroy the all microorganisms and spores in milk - for few seconds. The first LTLT system (batch pasteurization) was introduced in Germany in 1895 and in the USA in 1907. Then, HTST continuous processes were developed between 1920 and 1927. UHT milk was first developed in the 1960s and became generally available for consumption in the 1970s. At present, UHT is most commonly used in milk production.