• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.5
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• pp.11-16
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• 1984

In this paper, the construction of the Liquid Phase Epitaxy system for fabricating III-V compound semiconductor devices and the method of growing AIGaAs/GaAs Double-Hetero-structure are discussed. The possibility of this Double-Heterostructure for the Light Emitting Diode is confirmed also.

• Journal of the Korean Ceramic Society
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• v.54 no.6
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• pp.449-469
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• 2017

The development of quantum dots (QDs) has had a significant impact on various applications, such as solar cells, field-effect transistors, and light-emitting diodes (LEDs). Through successful engineering of the core/shell heterostructure of QDs, their photoluminescence (PL) quantum yield (QY) and stability have been dramatically enhanced. Such high-quality QDs have been regarded as key fluorescent materials in realizing next-generation display devices. Particularly, electrically driven (or electroluminescent, EL) QD light-emitting diodes (QLED) have been highlighted as an alternative to organic light-emitting diodes (OLED), mostly owing to their unbeatably high color purity. Structural optimizations in QD material as well as QLED architecture have led to substantial improvements of device performance, especially during the past decade. In this review article, we discuss QDs with various semiconductor compositions and describe the mechanisms behind the operation of QDs and QLEDs and the primary strategies for improving their PL and EL performances.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.326-329
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• 2016

2차원 metal monochalchogenides(MMC) 물질들 중 lattice mismatch가 가장 적은 GaSe와 InS의 $8{\times}1$ lateral heterostructure의 계면 원자 구조와 전자 구조를 Linear combination of atomic orbital 제일원리계산을 이용하여 연구하였다. Arm-chair 와 zigzag 계면에 대해 각각 두 가지 원자 구조를 고려하여 총 네 가지 계면 구조 모델을 정립하고, 각각의 계면에 대해 GaSe-InS의 비율을 다섯 단계(2:6, 3:5, 4:4, 5:3, 6:2)로 바꾸어 가며 relax된 원자구조의 특성과 계면 형성 에너지를 구하였다. 또한, 계면 전자구조 분석을 위하여, 계면으로부터의 위치에 따른 projected density of states의 변화를 규명하였다.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.143-143
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• 2003

• 한국초전도학회:학술대회논문집
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• 2007.07a
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• pp.30-30
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• 2007

• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.79-79
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.252-252
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.54-55
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• 1997

• Proceedings of the Korean Magnestics Society Conference
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• 2016.05a
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• pp.66-66
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• 2016

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.285-296
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• 2005

Reduced pressure chemical vapor deposition technology has been used to study SiGe heterostructure epitaxy and device issues, including SiGe relaxed buffers, proper control of Ge component and crystalline defects, two dimensional delta doping, and their influence on electrical properties of devices. From experiments, 2D profiles of B and P presented FWHM of 5 nm and 20 nm, respectively, and doses in 5×10/sup 11/ ∼ 3×10/sup 14/ ㎝/sup -2/ range. The results could be employed to fabricate SiGe/Si heterostructure field effect transistors with both Schottky contact and MOS structure for gate electrodes. I-V characteristics of 2D P-doped HFETs revealed normal behavior except the detrimental effect of crystalline defects created at SiGe/Si interfaces due to stress relaxation. On the contrary, sharp B-doping technology resulted in significant improvement in DC performance by 20-30 ％ in transconductance and short channel effect of SiGe HMOS. High peak concentration and mobility in 2D-doped SiGe heterostructures accompanied by remarkable improvements of electrical property illustrate feasible use for nano-sale FETs and integrated circuits for radio frequency wireless communication in particular.