• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.496-498
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• 2005

We reported that high dielectric hafnium oxide nano-film deposited by thermal atomic layer deposition on the poly-silicon film (poly-Si). The poly -Si film was produced by plasma enhanced chemical vapor deposition and excimer laser annealing. We used the hafniu m chloride ($HfCl_4$) and water as the precursors and analyzed the hafnium oxide film by transmission electron microscope and secondary ion mass spectrometer. Hafnium oxide produced by the ALD method showed very good coverage on the rough surface of poly-Si film. While deposited with 200 cycles, these hafnium oxide films revealed a relatively smooth surface and good uniformity, but the cumulative roughness produced by the incomplete reaction was apparent when the amount of deposition cycle increased to 600 cycles.

• Nuclear Engineering and Technology
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• 제20권4호
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• pp.233-240
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• 1988

KMRR은 잉여반응도 및 출력분포조절을 위하여 Hafnium관을 사용한다. 현재 노심해석은 핵연료집합체 단위로 균질화된 5군 군정수를 이용하여 중성자 확산코드인 VENTURE을 이용한다. Hafnium관내에 핵연료가 들어있는 특수한 조정 집합체에 대해서도 이러한 균질화된 군정수를 사용한 중성자 확산계산이 적용될 수 있는가를 조사하였다. 비교계산은 중성자 수송코드인 TWOTRAN을 사용하여 잉여반응도 및 출력 준위에 대해 수행하였다. 계산결과 현재의 균질화된 군정수를 사용하는 중성자 확산계산이 큰 오차없이 적용할 수 있는 것으로 나타났다.

• 한국재료학회지
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• 제34권5호
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• pp.247-253
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• 2024

The separation of zirconium and hafnium using tributyl phosphate (TBP)-Dodecane extractants in nitric acid medium was performed. Zirconium oxychloride, used as extraction feed, was obtained from the synthesis of Kalimantan zircon sand concentrate smelted using NaOH. The extraction process was carried out by dissolving chloride-based metals in nitric acid media in the presence of sodium nitrate using TBP-Dodecane as an extractant. Some of the extraction parameters carried out in this study include variations in organic phase and aqueous phase (O/A), variations in contact time, and variations in nitric acid concentration. Extraction was carried out using a mechanical shaker according to the parameter conditions. X-ray fluorescence (XRF) was used for elemental (Zr and Hf) composition analysis of the aqueous solution. The results showed that zirconium was separated from hafnium at optimum conditions with an organic/aqueous ratio of 1:5, contact time of 75 min, and an HNO₃ concentration of 7 M. The resulting separation factor of zirconium and hafnium using TBP-Dodecane was 14.4887.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1315-1318
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• 2007

Hafnium dioxide nano film as gate insulator for organic thin film transistors is prepared by atomic layer deposition. Mostly crystalline of $HfO_2$ films can be obtained with oxygen plasma and with water at relatively low temperature of $150^{\circ}C$. $HfO_2$ was deposited as a uniform rate $1.2A^{\circ}/cycle$. The morphology and performances of OTFT will be discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.211-213
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• 2008

The TFTs from ZnO semiconductor with hafnium oxide dielectrics were prepared by atomic layer deposition to characterize the electrical properties. Good electrical properties of oxide TFT was obtained with channel mobility of $2.1\;cm^2/Vs$, threshold voltage of 0 V, the subthreshold slope of 0.9 V/dec, and on to off current ratio of $10^6$.

• Transactions on Electrical and Electronic Materials
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• 제9권6호
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• pp.247-250
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• 2008

Hafnium dioxide ($HfO_2$) thin film as a gate dielectric for organic thin film transistors is prepared by plasma enhanced atomic layer deposition (PEALD). Mostly crystalline of $HfO_2$ film can be obtained with oxygen plasma and with water at relatively low temperature of $200^{\circ}C$. $HfO_2$ was deposited as a uniform rate of $1.2\;A^{\circ}$/cycle. The pentacene TFT was prepared by thermal evaporation method with hafnium dioxide as a gate dielectric. The electrical properties of the OTFT were characterized.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.116-116
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• 2007

We investigated the characteristics of the Hafnium silicate (Hf-silicate) film which is grown by ALD (atomic layer deposition). The Hf-silicate films that were annealed by the RTP. The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas and $NH_3$ gas annealing, were investigated by XPS, TEM and I-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The tendency of nitnitridation in NO gas and $NH_3$ is different. Leakage current is improved in post NO gas annealing.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 춘계학술발표강연 및 논문개요집
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• pp.82-82
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• 2001

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.59-59
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• 2002

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 춘계총회 및 연구발표회 초록집
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• pp.137.2-137
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• 2003