• 한국결정성장학회지
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• 제9권6호
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• pp.558-562
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• 1999

승화 성장법을 적용하여 성장된 6H-SiC 결정에 대하여, KSV 이론과 성장 계면에서의 미사면(vicinal plane)상의 step 성장 양상을 근거로 하여, 성장 계면에서의 물질 흡착의 거동과 결함의 생성간의 상호 관계를 고찰하고, micropipes와 내부 결함의 생성 원인을 논하였다. micropipe와 면결함등의 결함들은 ledge 혹은 kink에 침입된 불순물에 의하여 step 성장의 진행이 방해받는 부분에 형성되었다. 따라서, SiC 결정에서 이들 결함의 생성은 SiC 결정 성장 계면에 형성되는 결정학적 step 성장면과 분자 또는 원자들의 격자 이동에 관련이 있음을 알 수 있었다.

• 한국결정성장학회지
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• 제26권3호
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• pp.89-94
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• 2016

본 연구에서는 HVPE(Hydride Vapor Phase Epitaxy)를 이용하여 각각 다른 V/III ratio를 가지는 multi-step의 성장 시간 변화에 따라 r-plane 사파이어 위에 성장되는 a-plane GaN 에피층의 결정성에 대하여 연구하였다. 또한 이번 연구의 결과를 선행 연구에서 single-step으로 r-plane 사파이어 위에 성장시킨 a-GaN 에피층의 결과와 비교하였다. Multi-step으로 r-plane 사파이어 위에 a-plane GaN 에피층을 성장시켰을 때, source HCl의 유량과 성장 시간이 증가함에 따라 a-plane GaN 에피층에 대한 rocking curve의 FWHM(Full Width at Half Maximum) 값이 감소하였다. 높은 source HCl의 유량을 갖는 first step과 second step의 성장 시간과 source HCl의 유량이 증가할수록 a-plane GaN 에피층 내부의 void가 감소하였다. 결과적으로 first step과 second step의 성장 시간이 가장 긴 조건에서 성장된 a-plane GaN 에피층이 가장 낮은 FWHM 값인 584 arcsec을 가지며, azimuth angle의 의존도가 가장 적은 것으로 확인되었다.

• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.95-100
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• 2000

For the well-controlled growing in-situ heavily phosphorus doped polycrystalline Si films directly on Si wafer by reduced pressure chemical vapor deposition, a study is made of the two step growth. When in-situ heavily phosphorus doped Si films were deposited directly on Si (100) wafer, crystal structure in the film is not unique, that is, the single crystal to polycrystalline phase transition occurs at a certain thickness. However, the well-controlled polycrtstalline Si films deposited by two step growth grew directly on Si wafers. Moreover, the two step growth, which employs crystallization of grew directly on Si wafers. Moreover, the two step growth which employs crystallization of amorphous silicon layer grown at low temperature, reveals crucial advantages in manipulating polycrystal structures of in-situ phosphorous doped silicon.

• 한국결정성장학회지
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• 제11권1호
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• pp.1-5
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• 2001

승화법에 의하여, 여러 조건의 성장압력과 성장온도에서 SiC 단결정을 성장시켰다. 성장된 단결정을 광학현미경으로 관찰하여 성장 step의 형태와 양상을 관찰하였으며, 성장 step의 morphology와 결정 성장 인자와의 상호 연관성에 대하여, 핵생성과 결정성장에 관한 BCF 이론을 적용시켜 고찰하였다.

• Journal of Electrical Engineering and Technology
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• 제6권2호
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• pp.280-283
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• 2011

In the present work, a new approach is proposed for via interconnects of semiconductor devices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In order to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried catalyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the catalyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.

• Asian-Australasian Journal of Animal Sciences
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• 제17권6호
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• pp.794-798
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• 2004

An attempt was made to improve the efficiency of growth and lactation performance of dairy heifers subjected to a stair-step growth scheme using rice straw as the sole roughage source. Twenty-four young Holstein heifers were randomly assigned to either control or test group. The control diet met the National Research Council (NRC) requirement, with heifers calving at 24 to 26 mo of age. The test group was individually fed according to a schedule of 3, 2, 4, 2, 5 and 2 mo in which feed intake was alternately 20% below or 25% above the NRC requirements. Heifers on the stair-step growth pattern gained more body weight and consumed less dry matter (10.80 and 11.22%, respectively), resulting an increasing growth efficiency compared with the control. Body condition, first estrus, first conception, services per conception and calving difficulty (data not shown) were not affected. Milk yield of the test group was 8.5% higher than that of the control group. During the early lactation period, the milk yield was significantly higher in the stair-step group than in that of the control group (p<0.05). Milk composition was not affected by compensatory growth induced by the stair-step scheme. Also, weight at calving and calf growth performance was not affected by stair-step growth. The results indicate that using rice straw as a sole roughage source in a stair-step compensatory growth scheme can contribute to the improvement of growth efficiency and early lactation performance.

• 한국기계가공학회지
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• 제2권4호
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• pp.67-72
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• 2003

In this study, to investigate the effects of 2-step shot peening at the surface of spring steel, crack growth tests are conducted on spring steel and shot peened specimens. And then the residual stresses and fractographs are examined. The crack growth equation that can describe the whole crack growth behavior is used to evaluate the experiment results. The results show that fatigue crack glows slowly in the shot peened specimen than in the unpeened. And in the case of the 2-step shot peened specimen the initial stress intensity factor range and the fracture toughness is higher than the unpeened specimen due to the compressive residual stress. Fractographs show that the compressive residual stress of the surface suppress the fatigue crack opening and consequently slow crack growth rates.

• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.125-130
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• 2000

Two step growth of reduced pressure chemical vapor eposition has been successfully developed to achieve in-situ phosphorus-doped silicon epilayers, and the characteristic evolution on their microstructures has been investigated using scanning electron microscopy, transmission electron microscopy, and secondary ion mass spectroscopy. The two step growth, which employs heavily in-situ P doped silicon buffer layer grown at low temperature, proposes crucial advantages in manipulating crystal structures of in-situ phosphorus doped silicon. In particular, our experimental results showed that with annealing of the heavily P doped silicon buffer layers, high-quality epitaxial silicon layers grew on it. the heavily doped phosphorus in buffer layers introduces into native oxide and plays an important role in promoting the dispersion of native oxides. Furthermore, the phosphorus doping concentration remains uniform depth distribution in high quality single crystalline Si films obtained by the two step growth.

• 산업기술연구
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• 제35권
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• pp.3-8
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• 2015

A study has been made on defects which are formed in manufacturing processes of engine bearing and also on fatigue crack growth behavior in each step of bearing metal manufacturing. After the first step(sinter brass powder on steel plate ; Series A) many voids are made on brass surface and its size is decreased by the second step(rolling process of sintered plate ; Series B). After the third step(re-sintering step of brass powder and rolling ; Series C) the number of voids is decreased and its type shows line. The time of fatigue crack initiation and the growth rate of fatigue crack are in order of Series A, Series B, Series C. These reasons are that void fosters the crack initiation and growth, and residual stress made by rolling process effects on the crack growth rate in Series B, C. In forming and machining processes by use of final bearing metal, crack was observed at internal corner of flange and peeling off was observed at junction between steel and brass. Owing to the above crack and peeling off, it is considered that there is a possibility of fatigue fracture during the application time.

• 현장농수산연구지
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• 제12권1호
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• pp.21-27
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• 2010

The objective of this study was to determine the effects of "Green-one" organic nutrient on mycelial growth and fruiting of P. ostreatus. The dilution concentrations of "Green-one" was treated as follows. There was control, 100, 200, 400 concentrations. That treatments were treated with step of each mycelial growth step. The best of growth steps was mycelial scratching step. At that time, DPI(Day required for primordial formation after inoculation) was shortened for 1 day. Valid germination stipe are 15 pieces, 3 pieces more than control. Stipe length and stipe diameter was long each 4mm, 3mm more than control. Pileus size is shortened than control. Yields per one bottle(g/850cc) was 146g increased 6.5% than control 137g/850cc.