• International Commerce and Information Review
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• v.10 no.1
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• pp.329-347
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• 2008

The purpose of this study is to examine the causal relationship between the exchange rate and economic growth, and to induce policy implications. In order to test whether time series data is stationary and the model is fitness or not, we put in operation unit root test, cointegration test. And we apply Granger causality based on an error correction model. The results indicate that uni-dierctional causality between exchange rate and economic growth is detected. Exchange rate impacts on economic growth, but economic growth don't impact on exchange rate. The analysis of impulse reaction function shows that the impulse of exchange rate impacts on Korean economic growth in negative direction. We can infer policy suggestion as follows: The fluctuation of exchange rate much affects economic growth, thus we must make a stable policy of exchange rate to continue economic growth.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.45-48
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• 1998

For the single crystal growth of silicon, a global analysis of heat transfer in a CZ furnace was carried out using the finite element method, where the radiative heat transfer between the surfaces that possess both specular and/or diffuse reflectance components was taken into account, and then the effect of the specular reflection of the crystal and/or melt on the CZ crystal growth was numerically investigated.

• Journal of the Korean Institute of Intelligent Systems
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• v.13 no.5
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• pp.621-626
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• 2003

In this paper, we modeled a virtual life (VL) that reacts to the user s action according to its own behavioral characteristics and grows itself. We established some conditions with which such a VL is designed. Genetic Algorithm is used for the growth process that changes the VL s properties. In this process, the parameter values of the VL s properties are encoded as one chromosome, and the GA operations change this chromosome. The VL s reaction to the user s action is determined by these properties as well as the general expectation of each reaction. These properties are evaluated through 5 fitness measures so as to deal with multi-objective criteria. Here, we present the simulation of the growth Process, and show some experimental results.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.264.2-264.2
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• 2013

Molecular layer deposition (MLD) is sequential, self-limiting surface reaction to form conformal and ultrathin polymer film. This technique generally uses bifunctional precursors for stepwise sequential surface reaction and entirely organic polymer films. Also, in comparison with solution-based technique, because MLD is vapor-phase deposition based on ALD, it allows epitaxial growth of molecular layer on substrate and is especially good for surface reaction or coating of nanostructure such as nanopore, nanochannel, nanwire array and so on. In this study, polyurea film that consisted of phenylenediisocyanate and phenylenediamine was formed by MLD technique. In situ Fourier Transform Infrared (FTIR) measurement on high surface area SiO2 substrate was used to monitor the growth of polyurethane and polyurea film. Also, to investigate orientation of chemical bonding formed polymer film, plan-polarized grazing angle FTIR spectroscopy was used and it showed epitaxial growth and uniform orientation of chemical bones of polyurea films.

• Journal of the Korean Society for Heat Treatment
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• v.16 no.5
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• pp.260-266
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• 2003

In order to study the interfacial reaction between Nb thin sheet and Fe-C-(Si) alloy with different Chemical compositions, they were cast-bonded. The growth of carbide layer formed at the interface after isothermal heat treatment at 1173K, 1223K, 1273K and 1323K for various times was investigated. The carbide formed at the interface was NbC and the thickness of NbC layer was increased linearly in proportional to the heat treating time. Therefore, It was found that the growth of NbC layer was controlled by the interfacial reaction. The growth rate constant of NbC layer was slightly increased with increase of carbon content when the silicon content is similar in the cast irons. However, as silicon content increases with no great difference in carbon content, the growth of NbC layer was greatly retarded. The calculated activation energy for the growth of NbC layer was varied in the range of 447.4~549.3 kJ/moI with the compositions of cast irons.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.254-262
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• 1996

$Pb(Zr_{0.52}Ti_{0.48})O_{3}$ (PZT) ceramics were prepared with uniform particle size of $1~3\;\mu\textrm{m}$ by hydrothermal synthesis at various conditions, such as hydrothermal reaction temperature, concentration of mineralizer and reaction time. PZT ceramics were formed above $180^{\circ}C$ for 2 hrs reaction using 10 M KOH solution as a mineralizer, but reaction condition was slightly different by starting materials. Morphology and characterization of PZT powders were investigated by XRD and SEM. By increasing the reaction temperature, KOH concentration and reaction time, the composition of the PZT phase tended to be homogeneous phase.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.303-306
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• 1999

On the effect of substrate bias at first stage of diamond synthesis at lower substrate temperature(approximately 673K) using microwave plasma CVD and effect of reaction gas system for the bias enhanced nucleation were studied. The reaction gas was mixture of methane and hydrogen or carbon monoxide and hydrogen. The nucleation density of applied bias -150V using $CH_4-H_2$ reaction gas system, significantly higher than that of $C-H_2$ reaction gas system. When the $CH_4-H_2$ reaction was used, nucleation density was increased because of existence of SiC as a interface for diamond nucleation. By use of this negative bias effect for fabrication of CVD diamond film using two-step diamond growth without pre-treatment, fabrication of the diamond film consist of diamond grains $0.2\mu\textrm{m}$ in diameter was demonstrated

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.2
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• pp.109-121
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• 1995

Reaction coulples of SiC with cobalt were annealed in an Ar/4 vol% $H_2$ atmosphere at temperatures between $950^{\circ}C$ and $1250^{\circ}C$for various times between 4 and 100 h. At temperatures above $950^{\circ}C$, solid state reactions lead to the formation of various silicides with carbon precipitates. The typical reaction layer sequence was $SiC/CoSi + C/CozSi + C/CozSi/CozSi + C/{\cdot\cdot\}/CO_2Si/CO$ in the reaction zone. The mechanism of the periodic band structure formation with the carbon precipitation behaviour was examined and discussed in terms of reaction kinetics and thermodynamic considerations. The growth of the reaction zone has a square root of time dependence. The reaction kinetics is proposed to estimate the effective reaction constant from the parabolic gowth of the reaction zone. The mechanical properties of the reaction zones were determined by the microhardness test.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.32 no.3
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• pp.181-189
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• 2008

GaAs film growth process from trimethylgallium(TMGa) and tertiary-butylarsine(TBAs) using a horizontal MOCVD reactor was numerically studied to explain the experimental result that the decreasing surface reaction rate as the increasing partial pressure of group III species. Using the non-linear model based on the Langmuir isotherm which considers the adsorption and desorption of molecules, film deposition over the entire reactor scale was predicted by computational fluid dynamics (CFD) with the aid of the parameters obtained from the selective area growth (SAG) technique. CFD Results using the non-linear surface reaction model with the parameters determined from the SAG experiments predicted too high film growth rate compared to the measured values at the downstream region where the temperature was decreased abruptly. The pairs of ($k_s^n$, K) from the numerical simulations was $(2.52{\times}10K^{-6}mol/m^2/s,\;1.6{\times}10^5m^3/mol)$, whereas the experimentally determined was $(3.58{\times}10^{-5}mol/m^2/s,\;6.9{\times}10^5m^3/mol)$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.3
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• pp.110-114
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• 2004

Formation behavior of aragonite precipitated calcium carbonate was investigated with changed the concentration of $Na_2CO_3$ solution and addition method which added in the $Ca(OH)_2$ slurry at $75^{\circ}C$. In this reaction, we found that $Na^+$ ions were substituted into $Ca^{2+}$ion site then disturb the growth of calcite, and while proceed the crystal growth in a certain direction and promote the formation of aragonite. Also, a decrease of reaction rate by control the concentration of $CO_3^{2-}$ ion, induce the homogeneous precipitate reaction and increase substitution ability of $Na^+$ ions, consequently it was promote the formation and growth of aragonite.