• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.102-109
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• 2000

When PbZrO3 (PZ) and PbTiO3 (PT) particles were scattered on polished surfaces of sintered Pb(Zr0.52Ti0.48)O3 (PZT; Zr/Ti=1.08) and then annealed, the PZT grain boundaries migrated. Near the scattered particles, grain boundaries were corrugated and thus the grain shape changed from a normal one to irregular ones. Especially, near the scattered PZ particles, fast grain growth occurred. In the regions swept by moving grain boundaries, the Zr/Tiratio was measured to be about 1.35 for of PZ scattering and about 0.8 for PT scattering, respectively. This result indicates that the grain boundary migration was induced by alloying of Zr and Ti ions in PZT grains, as in usual diffusion induced grain boundary migration(DIGM). A calculation showed that higher coherency strain energy was induced for PT scattering because of higher alloying of Ti than of Zr.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.301-305
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• 2016

We investigate proton conduction in a nonstoichiometric ${\Sigma}3$ $BaZrO_3$ (210)[001] tilt grain boundary using density functional theory (DFT). We employ the space charge layer (SCL) and structural disorder (SD) models with the introduction of protons and oxygen vacancies into the system. The segregation energies of proton and oxygen vacancy are determined as -0.70 and -0.54 eV, respectively. Based on this data, we obtain a Schottky barrier height of 0.52 V and defect concentrations at 600K, in agreement with the reported experimental values. We calculate the energy barrier for proton migration across the grain boundary core as 0.61 eV, from which we derive proton mobility. We also obtain the proton conductivity from the knowledge of proton concentration and mobility. We find that the calculated conductivity of the nonstoichiometric grain boundary is similar to those of the stoichiometric ones in the literature.

• Journal of the Korean Ceramic Society
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• v.44 no.12
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• pp.683-689
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• 2007

Grain-boundary conduction in the fluorite-structure solid oxide electrolytes such as acceptor-doped zirconia and ceria were reviewed. The siliceous impurity, even several hundreds ppm, affects the ionic conduction across grain boundary to a great extent. Various approaches to improve grain-boundary conduction in fluorite-structure oxide electrolytes have been investigated, which include (1) the scavenging of siliceous phase by the reaction with second phase, (2) the gathering of intergranular siliceous phase into a discrete configuration and (3) the dewetting of intergranular liquid phase by post-sintering heat treatment.

• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.587-594
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• 1994

(Ba, Sr)TiO3-based PTCR ceramics were sintered and cooled down with various cooling conditions in the air. AES was applied to investigate the composition change in the grain boundary and bulk area of oxidatively cooled samples. Ba component was deficit in grain boundary region, while oxygen was abundant than bulk region. The discrete changes of oxygen binding energies were confirmed in the grain boundary region of the heavily oxidized samples. It was supposed that the large binding energy shift resulted from the oxidation of the segregated Mn in grain boundary region and this idea was supported by the DV-X$\alpha$ molecular energy simulation.

• Journal of the Korean Ceramic Society
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• v.54 no.5
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• pp.413-421
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• 2017

In this work, we studied a fluorite structure oxides: Yttria stabilized zirconia, (YSZ); Gd doped $CeO_2$ (GDC); erbia stabilized $Bi_2O_3$ (ESB); Zr doped erbia stabilized $Bi_2O_3$ (ZESB); Ca doped erbia stabilized $Bi_2O_3$ (CESB) in the temperature range of 250 to $600^{\circ}C$ using electrochemical impedance spectroscopy (EIS). As is well known, grain boundary blocking effect was observed in YSZ and GDC. However, there is no grain boundary effect on ESB, ZESB, and CESB. The Nyquist plots of these materials exhibit a single arc at low temperature. This means that there is no space charge effect on ${\delta}-Bi_2O_3$. In addition, impedance data were analyzed by using the brick layer model. We indirectly demonstrate that grain boundary ionic conductivity is similar to or even higher than bulk ionic conductivity on cubic bismuth oxide.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2002.02a
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• pp.266-273
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• 2002

Milli-structure components are classified as a component group whose size is between macro and micro scales, that is, about less than 20mm and larger than 1mm. The bending of these components of thin sheets has a typical phenomenon of bulk deformation because of the forming size. The recent trend towards miniaturization causes an increased demand for parts with very small dimensions. The conceptual miniature bending process enables the production of such parts with high productivity and accuracy. The stress values of the flow curve decrease with miniaturization, which means that coarse grained materials show a higher resistance against deformation, when the grain size is in the range of the sheet thickness. In this paper, a new numerical approach is proposed to simulate intergranular milli-structure in forming by the finite element method. The grain element and grain boundary element are introduced to simulate the milli-structure of strip in the bending. The grain element is used to analyze the deformation of individual grain while the grain boundary element is for the investigation on the movement of the grain boundary. Also, the result of the finite element analysis is confirmed by a series of milli-sized forming experiments.

• Journal of Welding and Joining
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• v.21 no.2
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• pp.82-88
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• 2003

The bonding phenomenon and mechanism in the transient liquid phase bonding(TLP Bonding) of directionally solidified Ni base superalloy, GTD-111 was investigated. At the bonding temperature of 1403K, liquid insert metal was eliminated by isothermal solidification which was controlled by the diffusion of B and Si into the base metal and solids in the bonded interlayer grew epitaxially from mating base metal inward the insert metal. The number of grain boundaries formed at the bonded interlayer was corresponded with those of base metal. The liquation of grain boundary and dendrite boundary occurred at 1433K. At the bonding temperature of 1453K which is higher than liquation temperature of grain boundary, liquids of the Insert metal were connected with liquated grain boundaries and compositions in each region mixed mutually. In Joints held for various time at 1453t phases formed at liquated grain boundary far from the interface were similar to those of bonded interlayer. With prolonged holding time, liquid phases decreased gradually and liquids of continuous band shape divided many island shape. But liquid phases did not disappeared after holding for 7.2ks at 1453k. Isothermal solidification process at the bonding temperature which is higher than the liquation temperature of the grain boundary was controlled by diffusion of Ti to be result in liquation than B or Si. in insert metal. (Received January 15, 2003)

• Journal of the Korean Ceramic Society
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• v.36 no.11
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• pp.1252-1260
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• 1999

The defect chemistry and electrical characteristics of the grain boundaries of semiconducting SrTiO3 ceramics synthesized with wet-chemically surface-coated powders were investigated. The starting powders were separated into groups of 1-10${\mu}{\textrm}{m}$ 10-20${\mu}{\textrm}{m}$ etc by sedimentation and sieving methods. Na+ ions were absorbed on the powder surfaces by wet chemical-treatment method. The width of the grain boundary ranged up to several nm and the intergranular materials was amorphous. The additives coated on the surface of the powders were observed to be present at the grain boundaries of the ceramics. The diffusion depth of the additives into grains was about 30nm for the SrTiO3 ceramics synthesized with 5w/o coated materials, The threshold voltage grain boundary resistance and boundary potential barrier of the ceramics increased from 0.67V/cm 2.27k$\Omega$ and 0.05eV to 80.9V/cm 13.0k$\Omega$ 1.44eV with increasing the amount of the additives from 0 to 5 w/o respectively .

• Journal of the Korean Ceramic Society
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• v.36 no.4
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• pp.372-379
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• 1999

Hihg-toughened ceria-stabilized tetragonal zirconia ceramics with irregular grain shape and undulated grain boundary was prepared by ceria doping. Irregularity of grain shapes was increased with the amount of doped ceria. But in case of the large amount of doped ceria grain boundary was migrated to the reverse direction of DIGM. Ceria-stabilized zirconia ceramics annealed at 1650$^{\circ}C$ for 2h after twice dippings into cerium nitrate solu-tion of 0.2M and sintering at 1500$^{\circ}C$ for 2h showed the highest grain boundary length with a value of 23.6$\mu\textrm{m}$ Ceria concentration difference between convex and concave sides in irregular grains was observed over 1 mol% but not observed in normal grains, Specimens with normal grain shape showed intergranular fracture mode whereas the specimens with irregular grain shape showed transgranular fracture mode.

• Progress in Superconductivity and Cryogenics
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• v.20 no.3
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• pp.5-10
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• 2018

This study presents that various grain boundary junctions are prepared by controlling the seed orientation combined with an artificial hole in a melt process REBCO bulk superconductor. Large grain YBCO superconductors have been fabricated with various grain boundary junctions that the angle between the grain boundary and the <001> axis of Y123 crystal is $0^{\circ}$, $30^{\circ}$ and $45^{\circ}$, respectively. The presence of the artificial hole is beneficial for the formation of clean grain boundary junction and single peak trapped magnetic field profiles have been obtained. Artificial hole makes two growth fronts meet at a point on a periphery of the artificial hole. The presence of artificial hole is not likely to affect on the distribution of Y211 particles. The newly formed <110> facet lines are explained by the formation of new Y123/liquid interface with (010) crystallographic plane.