• Journal of Powder Materials
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• v.19 no.3
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• pp.215-219
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• 2012

An attempt was made to evaluate creep reliability of two commercial Ni-based superalloys by using ultrasonic wave. The materials include fine-grained PM alloy fabricated by mechanical alloying and subsequent hot isostatic pressing, and IN738LC cast alloy with a grain size of a few cm. Microstructural parameters (fraction of creep cavity and size of ${\gamma}^{\prime}$ precipitates) and ultrasonic parameters (velocity, attenuation) were measured to try to find relationships between them. Ultrasonic velocity decreased with creep cavity formation in PM alloy. On the other hand, no distinct changing trend of ultrasonic velocity was observed for IN738LC alloy. Ultrasonic attenuation was found to have a linear correlation with the size of ${\gamma}^{\prime}$ precipitates and was suggested as a potential parameter for monitoring creep reliability of IN738LC alloy.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1994.04c
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• pp.6-6
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• 1994

Har dmaterials such as cemented carbides with or without coated layer, cermets, ceramics and diamond or c-BN high pressure sintered compact are used for cutting tools, wear -resistant parts, rock drilling bits and/or high pressure vessels. These hardmaterials contain not only hard phase, but also second consituent as the element for forming ductile phase and/or sintering aid, and the mechanical properties of each material depend on (1) the amount of the second constituent as well as (2) the grain size of the hard phase. The hardness of each material mainly depends on these two factors. The fracture strength, however, largely depends on other microstructur a1 factors as well as the above two factors. For all hardmaterials, the fracture strength is consider ably affected by (3) the size of microstructur a1 defect which acts as the fracture source. In cemented carbides, the following factors which are generated mainly due to the addition of the second constituent are also important; (4) the variation of the carbon content in the normal phase region free from V-phase and graphite phase, (5) the precipitation of $Co_3$ during heating at about $800^{\circ}C$,(6) the domain size of binder phase, and (7) the formation of ${\beta}$-free layer or Co-rich layer near the surface of sintered compacts. For cemented carbides coated with thin hard substance, the important factors are as follows; (8) the kind of coated substance, (9) the formation of ${\eta}$-phase layer at the interface between coated layer and substrate, (10) the type of residual stress (tension or compression) in the coated layer which depends on the kind of coating method (CVD or PVD), and (11) the properties of the substrate, and (12) the combination, coherency and periodicity of multi-layers. In the lecture, the details of these factors and their effect on the strength will be explained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.292-297
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• 2003

We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.

• Journal of the Korean Geotechnical Society
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• v.18 no.5
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• pp.229-236
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• 2002

In this study, the characteristics of chemical grouting, such as solidification, penetrability, were analyzed experimentally by grain size of grout materials and permeability, relative density of the ground. For evaluating applicability of grout material, solidification tests and permeability tests were peformed. From the results of the tests, effective solidification ratio and penetrability ratio of Micro Cement were 75% and 86% respectively when ground permeability was in the range of 10$^{-4}$ to 10$^{-2}$cm/sec. On the other hand, effective solidification ratio and penetrability ratio of Ordinary Portland Cement (OPC) were both lower than 50%. When penetrability of grout material is needed for improvement of dam foundation and soft ground, application of Micro Cement is much superior to that of the other materials. The results of the grouting tests in the hydrodynamic ground show that the solidification effect of long gel-time grout material is excellent as injection pressure increases when groundwater velocity is relatively low. But when groundwater velocity is relatively high, the solidifcation effect of long gel-time grout material is very poor because most grout materials are outflowed.

• Journal of the Korean GEO-environmental Society
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• v.2 no.1
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• pp.67-79
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• 2001

The objective of this study is to determine the engineering properties of micro fine hybrid silicate grout materials that were developed recently. In this study, MSG-N type was mainly used as grout materials, and the chemical components, grain size distribution, mineral characteristics were analyzed. Moreover, the properties of active silica and ordinary portland cement acting as coagulating agent were analyzed and compared with each other. To determine the engineering properties, the bleeding test, viscosity test, coagulation test, examination with naked eye, photographing by using SEM, uniaxial compression test and in-situ application test for reclaimed ground were carried out. A series of test results showed that the strength of micro fine hybrid silicate grout materials was about twice that of ordinary sodium silicate grout materials, and alkali leakage decreased dramatically when MSG method was utilized. Especially, based on the evaluation of the application of the MSG method to field, this method would be very effective in reducing coefficient of permeability due to its excelent permeability.

• Journal of the Korean Ceramic Society
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• v.50 no.4
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• pp.301-307
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• 2013

SiC hollow fiber was fabricated by curing, dissolution and sintering of Al-PCS fiber, which was melt spun the polyaluminocarbosilane. Al-PCS fiber was thermally oxidized and dissolved in toluene to remove the unoxidized area, the core of the cured fiber. The wall thickness ($t_{wall}$) of Al-PCS fiber was monotonically increased with an increasing oxidation curing time. The Al-PCS hollow fiber was heat-treated at the temperature between 1200 and $2000^{\circ}C$ to make a SiC hollow fibers having porous structure on the fiber wall. The pore size of the fiber wall was increased with the sintering temperature due to the decomposition of the amorphous $SiC_xO_y$ matrix and the growth of ${\beta}$-SiC in the matrix. At $1400^{\circ}C$, a nano porous wall with a high specific surface area was obtained. However, nano pores grew with the grain growth after the thermal decomposition of the amorphous matrix. This type of SiC hollow fibers are expected to be used as a substrate for a gas separation membrane.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.30-37
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• 1996

Previously, crystallization of a-Si:H films on glass substrates were limited to anneal temperature below 600.deg. C, over 10 hours to avoid glass shrinkage. Our study indicates that the crystallization is strongly influenced by anneal temperature and weakly affected by anneal duration time. Because of the high temperature process and nonconducting substrate requirements for poly-Si TFTs, the employed substrates were limited to quartz, sapphire, and oxidized Si wafer. We report on poly-Si TFT's using high temperature anneal on a Si:H/Mo structures. The metal Mo substrate was stable enough to allow 1000.deg. C anneal. A novel TFT fabrication was achieved by using part of the Mo substrate as drain and source ohmic contact electrode. The as-grown a-Si:H TFT was compared to anneal treated poly-Si TFT'S. Defect induced trap states of TFT's were examined using the thermally stimulated current (TSC) method. In some case, the poly-Si grain boundaries were passivated by hydrogen. A-SI:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly -Si films were achieved by various anneal techniques; isothermal, RTA, and excimer laser anneal. The TFT on as grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from 200 to >$1000^{\circ}C$ The TFT on poly-Si showed an improved $I_on$$I_off$ ratio of $10_6$, reduced gate threshold voltage, and increased field effect mobility by three orders. Inverter operation was examined to verify logic circuit application using the poly Si TFTs.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.142-142
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• 2011

Epitaxial $CuCrO_2$ thin films have been grown on single crystal substrate of c-plane $Al_2O_3$, $SrTiO_3$, YSZ and Quarts by laser ablation of a $CuCrO_2$ target using 266nm radiation from a Nd:YAG laser. X-ray measurements indicate that the $CuCrO_2$ grows epitaxially on all substrate, with its orientation dependent on the kinds of substrates. Most of the layer were polycrystalline with (001), (015) and random as the dominant surface orientation on c-plane YSZ, $SrTiO_3$ and quarts substrate, respectively. (001) orientated $CuCrO_2$ grows on C-plane $Al_2O_3$ and YSZ substrate, (015) orientated $CuCrO_2$ films are found on c-plane $SrTiO_3$ substrate and random orientated $CuCrO_2$ films grows on quarts substrate. These data are compared with the in-plane orientation and the mismatch of the $CuCrO_2$ and each substrate lattices in an attempt to relate the preferred orientation to the plane of the sapphire on which it is grown. Further characterization show that the grain size of the films increases for a substrate temperature increase, whereas the electrical properties of $CuCrO_2$ thin films depend upon their crystalline orientation.

• Journal of the Korea institute for structural maintenance and inspection
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• v.15 no.6
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• pp.110-117
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• 2011

Seashore landfill projects use undersea pump dredging method for construction of airport and factory site. Coarse grain soil from the dredging is considered for use at inland. West sea shore bottom consists of primarily coarser grained silt-sand and this component contains far more percentage than is the case with East sea and South sea area. This soil shows very different characteristic at consolidation and compaction behavior. This research targets to utilize this type of dredging soil. Test specimen is from West sea (Saemangum) dredged soil landfill site. Model analysis is done for getting prediction of original soil relative density and N-value from dynamic compaction energy variance. Dynamic compaction energy is calculated for efficient foundation design.

• Journal of Sensor Science and Technology
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• v.5 no.5
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• pp.69-77
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• 1996

In this paper, we fabricated the micro hotplate which consisted of a thin film heater(Pt/Cr bilayers) sandwiched with the thermal oxide and E-beam evaporated oxide. And we studied the electrical and the structural properties of Pt/Cr bilayers due to annealing temperature. When we compared the temperature measured from type k thermocouples with the temperature acquired from I.R. thermo-vision system according to the variations of emissivity, the emissivity of I-beam evaporated oxide was 0.5. The sheet resistance of Pt/Cr bilayers didn't depend on the Cr layer thickness, and it was considered as the existence of CrO between the Pt and the Cr layer. When the annealing temperature was increased from $500^{\circ}C$ to $700^{\circ}C$, the out-diffusions of Cr were increased(which was confirmed by AES depth profile) and the grain size of Pt(220) phase was enlarged also(analyzed by XRD and SEM photographs). From the results of XRD analysis and AES depth profile, the Pt/Cr bilayers annealed at $500^{\circ}C$ were more stable than any other cases in structural properties.