• Electrical & Electronic Materials
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• v.7 no.6
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• pp.534-542
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• 1994

Microstructures and dielectric properties of (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$+0.006Nb$_{2}$O$_{5}$ (0.05.leq.x.leq.0.2) ceramic were investigated. The specimens fired in a reducing atmosphere(N$_{2}$) were painted on the surface with CuO paste, and then annealed at 1100.deg. C for 2 hr. SEM and EDAX revealed that CuO penetrated rapidly into the bulk along the grain boundaries during the annealing. Grain size increased with increasing Ca content up to 15[mol%], but decreased with further addition. In the specimens with 10-15[mol%l of Ca, excellent dielectric properties were obtained as follows; dielectric constant <25000, dielectric loss(tan .delta[%]) <0.3[%] and capacitance change rate with temperature <.+-.[%], respectively. All the specimens in this study exhibited dielectric relaxation with frequency as a function of the temperature. The dispersive frequency was over 10$^{6}$ [Hz].z].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.879-884
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• 2001

In this paper, the structural and dielectric properties of (Sr$_{l-x}$Ca$_{x}$)TiO$_3$ (0$\leq$x$\leq$0.2) -based grain boundary layer ceramics were investigated by XRD, SEM and HP4194A. The ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1420~152$0^{\circ}C$ and 4 hours, respectively. The average grain size and the lattice constant were decreased with increasing content of Ca. The average grain size was increased with increase of sintering temperature. The relative density of all specimens was 96~98%. The 2nd Phase formed by the thermal diffusion of CuO from the surface leads to very excellent dielectric properties, that is, $\varepsilon$$_{r}$>50000, tan $\delta$<0.05, $\Delta$C<$\pm$10%. The appropriate Ca content was under 15 ㏖%.s under 15 ㏖%.%.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.38-38
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• 2010

Ever since the experimental discovery of graphene exfoiliated from the graphite flakes by Geim et at., this area has drawn a lot of attention for its possible application in IT industry. For the growth of graphene, chemical vapor deposition (CVD) has been widely used to fabricate the large area graphene. The lateral size of this graphene can be easily controlled by the size of the metal substrate though the chemical etching to remove this substrate is somewhat troublesome. Another problem which is hard to avoid is the folding at the grain boundary. We will discuss the origin of the folding first and introduce the way to avoid this folding. To solve this problem, we have used the various types of micro-thin metal foils. The precise control of hydro-carbon and the carrier gas results in the formation of the graphene on top of substrate. The thickness of graphene layers can be controlled with the control of gas flow on top of Cu substrate in contrast to the previously reported self-limiting growth $behavior^1$. Uniformity of this graphene layer has been checked by micro-raman spectroscopy and SEM. The size of grain can be enhanced by thermal treatment or use of other metal substrate. The dependence of grain size on the lattice size of the substrate will be discussed. By selecting the shape of substrate, we can grow various types of graphene. We will introduce the micron size graphene tube and its application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.231-236
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• 2005

To investigate the electrical properties at the single grainboundary of ZnO varistors, micro-electrodes were fabricated on the surface which was polished and thermally etched. Our micro-electrode had 2000 $\AA$ silicon nitride layer between micro-electrode and ZnO surface. This layer was deposited by PECVD and etched by RIE after photoresistor pattering process using by mask 1. The metal patterning of micro-electrodes used lift-off method. We found that the breakdown voltage of single grainboundary is about 3.5∼4.2 V at 0.1 mA on I-V curves. Also, capacitance-voltage measurement at single grainboundary gave several parameters( $N_{d}$, $N_{t}$, $\Phi$$_{b}$, t) which were related with grainboundary.ary.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.8
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• pp.950-958
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• 1988

We have implemented a RTA system using W-halogen lamps and tried to recrystallize the phosphorus ion implanted amorphous silicon on insultor (SOI) taking advantages of seeding window. The purpose of this study is to investigate the possibility of a typical crystalline orientation occurred during the solidifying process of molten amorphous silicon layer. Experimental results show that several twin boundaries are found on the seeding window region after annealing for 15 sec at 1040\ulcorner. These twin boundaries represent that the recrystallization is partialy possible and when the annealing is done at 1150\ulcorner, (100) etch pits with <110> facets are found on the solidified amorphous silicon layer. Consequently, Hall mobility of recrystallized silicon film is measured and the thermal behavior of grain boundary is also observed by SEM.

• Journal of the Korean Ceramic Society
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• v.28 no.8
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• pp.625-625
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• 1991

The specimens for the corrosion test were made by hot-pressing of SiC power with 2 wt% Nl2O3 and 10wt% Al2O3 additions at 2000℃ and 2050℃. The specimens were corroded in 37 mole% NaCl and 63 mole% Na2SO4 salt mixture at 1000℃ up to 60 min. SiO2 layer was formed on SiC and then this oxide layer was dissolved by Na2O ion in the salt mixture. The rate of corrosion of the specimen containing 10 wt% Al2O3 was slower than that of the specimen containing 2 wt% Al2O3. This is due to the presence of continuous grain boundary phase in the specimen containing 10 wt% Al2O3. The oxidation of SiC produced gas bubbles at the SiC-SiO2 interface. The rate of corrosion follows a linear rate law up to 50 min. and then was accelerated. This acceleration is due to the disruption oxide layer by the gas evolution at SiC-SiO2 interface. Pitting corrosion has found at open pores and grain boundaries.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.239-246
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• 1997

The ZnO is stabilize dielectric constant over a broad temperature range because its addition makes the relaxation time short. In this study, the composite oxide material (B $a_{0.85}$ $Ca_{0.15}$)Ti $O_{3}$ was mixed by ZnO additive material and the dielectric polarization characteristics was studied. The relative density was over 90[%] at all specimen in the structural characteristics. Among of the specimen, the relative density of (B $a_{0.85}$ $Ca_{0.15}$)Ti $O_{3}$ with ZnO (0.4mol) has a 95[%]. The grain size of composite oxide material with an increasing ZnO increased and it was 1.0[.mu.m]-1.22[.mu.m]. In the electrical characteristics, the charge and discharge current was increased by ZnO addition. The dielectric relaxation time was increased by space charge polarization at above 110[.deg. C] and the dielectric relaxation time was fixed by space charge polarization of para-dielectric layer at below 110[.deg. C]. The dielectric relaxation time was maximum when the grain size was small. The dielectric relaxation time is decreased with an additive material ZnO and interface polarization, existing void at the grain and grain boundary. The remnant polarization is increased and the coercive electric field is decreased by ZnO.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1301-1307
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• 1998

For dolomite clinkers used as stamp materials the corrosion behavior of those by molten steel was investigated in therange of temperatures between 1550$^{\circ}C$ and 1600$^{\circ}C$ IN hot face the dicalciumferrite of magnesioferrite and dicalciumferrite formed within dolomite clinkers was preferentially dissolved into molten steel and the protective layer of magnesioferrite was formed. For dolomite clinker without Fe2O3 magnesioferrite maintained the skeleton of MgO while the skeleton of CaO disappered bythe formation of dicalciumferrite and it existed as grain boundary phases of magnesioferrite. For dolomite clinker with Fe2O3 was diffused into hot face by the decomposition of dicalciumferrite. With increasing temperature of molten steel the formation depth of dicalciumferrite was increased and the magnesioferrite layer in hot face was decreased for dolomite clinker without Fe2O3 while the layer thickness and grain sizes of magnesioferrite in hot face was decreased for dolomite clinker without Fe2O3 while the layer thickness an grain sizes of magnesioferrite in hot face was increased due to the increment of the decomposition reaction of dicalciumferrite for dolomite clinker with Fe2O3.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2001.11a
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• pp.36-36
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• 2001

$BaTiO_3$는 현재 전기 전자 부속 산업엣 필수적인 재료로서, multilayer capacitor,positive temperature coefficient(PTC) resistor, grain-boundary battier layer capacitor(GBBLC)등에 쓰이고 있다. $BaTiO_3$의 전기적 특성을 최대화하기 위해서는 미세구조가 최적화 되어야만 하는데 일반적으로 수 마이트로 이내의 작고 균일한 크기의 입자크기가 바람직하다. 그러나 $BaTiO_3$계에서 화학양론의 조성이 정확하게 일치하지 않거나 $La^{3+}$나 $Nb^{5+}$같은 첨가제가 들어가지 않으면 비정상 입자 성장은 자발적으로 일어난다. 그러나 첨가제는 $BaTiO_3$의 강자성 특성에 영향을 주게 되므로 첨가제 없이 비정상 입자 성장을 억제할 수 있는 것이 바람직한 방법이며, 이 것이 본 실험의 목표이다. 본 실험에서는 0.4-mol%-$TiO_2$가 첨가된 $BaTiO_3$ 분말을 디스크 형태로 성형하여 $H_2$ 분위기, 1250에서 5시간동안 열처리한 후, 공기 중, 1300도에서 48시간까지 소결한 후 미세조직을 관찰하였다. 소결 전에 $H_2$ 분위기에서 열처리를 함으로서 초기 입자 크기는 증가하게 되고 이로 인한 계의 성장 구동력 감소로 비정상 입자 성장이 억제되었으며 균일하고 미세한 입자 크기를 가지는$BaTiO_3$ 소결체를 얻을 수 있었다. 또한 비정상이 억제되지 않은 $BaTiO_3$의 유전 특성보다 우수한 유전 특성을 나타내었다. 본 실험을 통해서 첨가제를 사용하지 않고 우수한 유전 특성을 가지는 미세한 균일한 입자의 $BaTiO_3$를 제조하는 새로운 기술을 개발하였다.

• Journal of Microbiology and Biotechnology
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• v.21 no.12
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• pp.1257-1263
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• 2011

This paper is dedicated to the study on the external and internal mass transfers of glucose for succinic acid fermentation under substrate and product inhibitions using a bioreactor with stirred bed of immobilized Actinobacillus succinogenes cells. By means of the substrate mass balance for a single particle of biocatalysts, considering the kinetic model adapted for both inhibitory effects, specific mathematical models were developed for describing the profiles of the substrate concentration in the outer and inner regions of biocatalysts and for estimating the substrate mass flows in the liquid boundary layer surrounding the particle and inside the particle. The values of the mass flows were significantly influenced by the internal diffusion velocity and rate of the biochemical reaction of substrate consumption. These cumulated influences led to the appearance of a biological inactive region near the particle center, its magnitude varying from 0 to 5.3% of the overall volume of particles.