• Title/Summary/Keyword: grain boundary layer

Search Result 154, Processing Time 0.024 seconds

Corrosion and Corrosion Fatigue Characteristics of Artificially Sensitized STS 304 (STS304 열화재의 부식및 부 식피로특성)

  • Han, Ji-Won;Bae, Dong-Ho
    • Journal of the Korean Society of Safety
    • /
    • v.25 no.6
    • /
    • pp.28-33
    • /
    • 2010
  • Stainless steel is useful material for various industrial facilities such as the nuclear and steam power plant and the heavy chemical industry due to its good corrosion resistance and mechanical properties. However, it has also a large problem that is sensitized in the welding process and its corrosion resistance and mechanical properties decreases by sensitization. Thus, corrosion and corrosion fatigue characteristics of artificially sensitized austenitic STS304 were investigated through the EPR test and corrosion fatigue test. Obtained results are as follows: 1) According to the sensitizing period increase, Cr deficiency layer is linearly expanded. 2) Degree of sensitization(Ia/Ir) proportionally increased with sensitizing period. However, after 4hrs, it showed constant value. 3) Cr-carbide($Cr_{23}C_6$) in the grain boundary increased as sensitizing period increases until six hours. 4) corrosion fatigue strength of sensitized STS304 were remarkably reduced compare to non-sensitized ones.

Effects of Plasma Nitriding on the Surface Charcteristice Of Stainless Steels (스테인스강의 표면특성에 미치는 플라즈마질화의 영향)

  • 최한철;김관휴
    • Journal of the Korean institute of surface engineering
    • /
    • v.30 no.2
    • /
    • pp.144-154
    • /
    • 1997
  • Effects of plasma nitriding on the surface charcteristice of stainless steel(SS) were investjgated by utilizing wear tester, micro-hardness tester and potentiostat. The surface and corrosion morphology of plasma nitrided SS were analyzed by utilizing optical microscopy, SEM, XRD and WDX. It was found that plasma nitriding at $550^{\circ}C$, compared with $380^{\circ}C$, prodiced a good wear resistance and hardness as nitriding time increased, whereas Mo addition showd that were resistance and hardness decreased. Intergranular corrosion(IGC) resistance improved significantly in the case of plasma nirtrided SS containing 4.05wt% Mo at $380^{\circ}C$ because that nitrogen and Mo ast syner gidically to form a protective layer on surface which is responsible for the aggresive SCN-ion. Plasma nitrided at $550^{\circ}C$ decreased IGC as Mo content increased. Pitting improved in the plasma nitirided SS at Mo content incresased owing to retard a nucleation and growth of chromium carbide or nitirde in grain boundary.

  • PDF

Strength Change in Ultra Low Carbon Steel due to Carburizing Heat Treatment for Hot Press Forming (HPF 적용을 위한 극저탄소강의 강도에 미치는 침탄 열처리의 영향)

  • Kang, Soo Young
    • Korean Journal of Metals and Materials
    • /
    • v.50 no.6
    • /
    • pp.433-438
    • /
    • 2012
  • Strength change in ultra low carbon steel carburized at $880^{\circ}C$ and $930^{\circ}C$ for 10, 30, 60 and 120 minutes was investigated. The results were analyzed by a tensile test, chemical composition analysis, optical microscopy and scanning electron microscopy. Stress in the 0.5% strain specimen in the tensile test increased as the time treated at $880^{\circ}C$ and $930^{\circ}C$ increased, because the carbon diffusion layer and the martensite of the specimen increased with increasing treatment time. Martensite was found in the ferrite region in the specimen treated at $880^{\circ}C$, which is attributed to grain boundary diffusion.

Improvement of electromigration characteristics in using Ai interlayer (Cu 배선에 Al층간 물질 첨가에 의한 EM특성 개선)

  • 이정환;박병남;최시영
    • Journal of the Korean Vacuum Society
    • /
    • v.10 no.4
    • /
    • pp.403-410
    • /
    • 2001
  • Acceleration in integration density and speed performance of ULSI circuits require miniaturization of CMOS and interconnections as well as higher current density capabilities for transistors. A leading candidate to substitute Al-alloy is Cu, which has lower resistivity and higher melting point. So we can expect much higher electromigration resistance. In this paper, we are going to explain the major features of EM for MOCVD Cu according to variant conditions. We compared the life time and activation energy of MOCVD Cu with those of I-beam Cu and AA in the same conditions. The electromigration experiments were performed with Cu/Al/TiN multilayer. Experimental results shows that the deposition rate and electromigration characteristics of Cu thin film were improved by the Al interlayer.

  • PDF

Electron Microscopic studies on the Ultrastrucure of Pyrenoid and Cell Wall in Chlorella Cells. (Chlorella 세포의 Pyrenoid 와 세포벽구조에 관한 전자현미경적 연구)

  • 이주식
    • Korean Journal of Microbiology
    • /
    • v.4 no.1
    • /
    • pp.1-13
    • /
    • 1966
  • The author examined for observing the structures of pyrenoid and cell wall of three strains of Chlorella ellipsoidea and relation of pyrenoid to starch grain formation at the ultrastructure level. 1. The development of pyrenoid of Chlorella species from the time of its initiation and its subdetail sequent activities are described in some pictures. 2. Close correlation between the findings of light microscopy and electron microscopy is proved. 3. The pyrenoid is a dynamic organellae which continues to change its appearance thoughout the development of the Chlorella cell. 4. The starch grains are continously formed by deposition of carbohydrate within the chloroplast with the aid of pyrenoid factors. 5. Some parental starch grains are passed on the daughter cell during cell division. 6. The Da stage cells contain only chlaroplast without pyrenoid matrix. In Da stage a pyrenoid is surrounded by starch and starch grains appear in chloroplast lamellae. In $L_1L_2$ stages, large starch grains of lens form accumulate in cell. In $L_3$ stage pyrenoid disappears for a time and starch grains are scattered. In cell division stage starch grains are divided into four groups. In $L_4$ stage, pyrenoid substance appears temporarily and disappears soon. At this stage the cell is constituted of Dn cell containing chloroplast only. 7. The cellular boundary of JE strain except Y 815 and Y 511 strain contains 250.angs. intermediate layer of unknown chemical composition between the fibrillar cellulose wall and the out capsule layer.

  • PDF

Fabrications and measurements of single layer YBCO dc-SQUID magnetometers designed with parallel-loop pickup coil (Parallel-loop 검출코일을 가지는 단일층 YBCO dc-SQUID 자력계의 제작 및 특성 연구)

  • 유권규;김인선;박용기
    • Progress in Superconductivity
    • /
    • v.5 no.1
    • /
    • pp.45-49
    • /
    • 2003
  • We have designed and fabricated the single-layer high $T_{c}$ SQUID magnetometer consisting of a directly coupled grain boundary junction SQUID with an inductance of 100 pH and 16 nested parallel pickup coils with the outermost dimension of 8.8 mm ${\times}$ 8.8 mm. The magnetometer was formed from a YBCO thin film deposited on an STO(100) bicrystal substrate with a misorientation angle of $30^{\circ}$. The SQUID magnetometer was further improved by optimizing the multi-loop pickup coil design for use in unshielded environments. Typical characteristics of the dc SQUID magnetometer had a modulation voltage of 40 $\mu\textrm{V}$ and a white noise of $30fT/Hz^{1}$2/. The SQUID magnetometer exhibited a 1/f noise level at 10 Hz reduced by a factor of about 3 compared with that of the conventional solid type pickup coil magnetometers and a very stable flux locked loop operation in magnetically disturbed environments.s.

  • PDF

Quantum Chemical Molecular Dynamics and Kinetic Monte Carlo Approach to the Design of MgO Protecting Layer in Plasma Display Panel

  • Kubo, Momoji;Kikuchi, Hiromi;Tsuboi, Hideyuki;Koyama, Michihisa;Endou, Akira;Carpio, Carlos A. Del;Kajiyama, Hiroshi;Miyamoto, Akira
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2006.08a
    • /
    • pp.371-374
    • /
    • 2006
  • We developed new quantum chemical molecular dynamics and kinetic Monte Carlo programs to simulate the destruction processes of MgO protecting layer in plasma display panel. Our simulation results proposed that MgO(111) surface with nano-dot structures covered by (001) facets has the highest stability, which is against the previous knowledge. The formation of nano-dot structures on the MgO(111) surface covered by (001) facets was found to be the reason for the high stability of the MgO(111) surface. Furthermore, the effect of grain boundary on the stability of MgO surfaces was also clarified.

  • PDF

Oxidation Resistance of SPS (Spark Plasma Sintering) Sintered β-FeSi2Bodies at High Temperature (방전플라즈마 소결법으로 제작한 β-FeSi2 소결체의 고온 내산화성)

  • Chang, Se-Hun;Hong, Ji-Min;Oh, Ik-Hyun
    • Korean Journal of Materials Research
    • /
    • v.17 no.3
    • /
    • pp.132-136
    • /
    • 2007
  • Oxidation resistance of sintered ${\beta}-FeSi_{2}$ was investigated at intermediate temperature range in air atmosphere. Fully dense and porous bodies of ${\beta}-FeSi_{2}$ samples were fabricated by using the Spark Plasma Sintering (SPS). They were annealed at $900^{\circ}C$ for 5days to obtain ${\beta}-FeSi_{2}$ phase. The bulk samples were oxidized at $800,\;900\;and\;950^{\circ}C$ in air atmosphere. The high temperature oxidation tests reveal that amorphous $SiO_{2}$ layer, similar to Si was formed and grew parabolically on ${\beta}-FeSi_{2}$. Accelerated oxidation is not observed as well as cracks and grain boundary oxidation. Granular ${\varepsilon}-FeSi$ was developed below the oxide layer as a result of oxidation of ${\beta}-FeSi_{2}$. Oxidation resistance of sintered ${\beta}-FeSi_{2}$ was excellent for high-temperature thermoelectric application.

Molecular Orbital Calculations for the Formation of GaN Layers on Ultra-thin AlN/6H-SiC Surface Using Alternating Pulsative Supply of Gaseous Trimethyl Gallium (TMG) and NH$_3$

  • Seong, Si Yeol;Hwang, Jin Su
    • Bulletin of the Korean Chemical Society
    • /
    • v.22 no.2
    • /
    • pp.154-158
    • /
    • 2001
  • The steps for the generation of very thin GaN films on ultrathin AlN/6H-SiC surface by alternating a pulsative supply (APS) of trimethyl gallium and NH3 gases have been examined by ASED-MO calculations. We postulate that the gallium cul ster was formed with the evaporation of CH4 gases via the decomposition of trimethyl gallium (TMG), dimethyl gallium (DMG), and monomethyl galluim (MMG). During the injection of NH3 gas into the reactor, the atomic hydrogens were produced from the thermal decomposition of NH3 molecule. These hydrogen gases activated the Ga-C bond cleavage. An energetically stable GaN nucleation site was formed via nitrogen incorporation into the layer of gallium cluster. The nitrogen atoms produced from the thermal degradation of NH3 were expected to incorporate into the edge of the gallium cluster since the galliums bind weakly to each other (0.19 eV). The structure was stabilized by 2.08 eV, as an adsorbed N atom incorporated into a tetrahedral site of the Ga cluster. This suggests that the adhesion of the initial layer can be reinforced by the incorporation of nitrogen atom through the formation of large grain boundary GaN crystals at the early stage of GaN film growth.

A Study on the Solidification and Purification of High Purity Aluminium Alternate Stirring Method (정역 회전법에 의한 고순도 알루미늄의 응고 및 정련에 관한 연구)

  • Kim, Wook;Lee, Joung-Ki;Baik, Hong-Koo;Heo, Seong-Gang
    • Journal of Korea Foundry Society
    • /
    • v.12 no.3
    • /
    • pp.220-229
    • /
    • 1992
  • The degree of purification and the macrostructure of high purity aluminium were studied through the alternate stirring method in order to improve the nonuniformity of solute concentration in the unidirectional stirring method. The $2^3$ factorial design was done to examine the effects of experimental factors more qualitatively. In the relatively low stirring speed of 1500 rpm with alternate stirring mode, the uniform solute profile and refined grain structure were obtained due to strong washing effect and turbulent fluid flow. It was induced by the transition of the momentum boundary layer by alternation of the stirrer. It was concluded from this study that the alternate stirring mode was more effective to obtain the uniformity of solute even in the stirring speed of 1500 rpm. But the degree of purification decreased below the critical alternating period. When 2N(99.8wt.%) aluminium was used as the starting material the morphology of solid-liquid showed the cellular shape and the columnar grains were inclined to the direction of rotation. This inclined grain growth resulted from the difference of relative velocities of solid and liquid. The inclined angle was increased as the stirring speed increased and solidification proceeded. In the case of 4N aluminium, there was no inclined grain growth and it was confirmed from the macrostructure and SEM work that the morphology of solid-liquid interface was planar. From the factorial design, it was found that the alternate stirring mode showed poorer purification effect than that of unidirectional stirring mode at low speed(500 rpm). In addition, the factor that had the most significant effect on the degree of purification was the stirring speed.

  • PDF