• Journal of the Korean Magnetics Society
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• v.6 no.3
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• pp.189-193
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• 1996

Magnetoresistance field sensitivity and magnetostriction were measured as a function of annealing temperature for NiFe/Ag multilayer systems displaying giant magnetoresistance. Key multilayer configurations such as number of NiFe/Ag bilayers and Ag spacer thickness were varied. A high giant magnetoresistance ratio up to 5% with zero magnetostriction and high magnetoresistance field sensitivity was possible to achieve simultaneously with optimal sample geometry and annealing condition.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.447-450
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• 1995

Using Boltzmaan equation by introducing the potential barrier scattering which buit by Hall-effect, a possible origin of giant magnetoresistance in multilayers is proposed. The calculated results may be well explain the giant magnetoresistance observed in multilayers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.45-48
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• 1998

We first report the GMR effect of new macroscopic ferrimagnet, Co-TbN. The Co-TbN system demonstrates typical macroscopic ferrimagnet properties which are a magnetic compensation Point and negative giant magnetoresistance (GMR) which is caused by the spin scattering contribution quite different from those of ordinary GMR materials. The Co-TbN system with 32 % TbN composition showed 0.72 % GMR in fields up to 8 kOe at room temperature and 9 % GMR at 250 K in 40 kOe. The GMR effect in the Co-TbN system increases with increasing temperature, which is due to the increase of ferromagnetic alignment of the Co and TbN in a field caused by the decrease of exchange coupling by temperature.

• Journal of the Korean Magnetics Society
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• v.17 no.5
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• pp.210-214
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• 2007

Recent years have seen a rapid development of spintronics. One of the major achievements of this field is the understanding of spin dependent process in various physical systems, for example, metallic multilayers showing the giant magnetoresistance (GMR). Today devices based on the GMR are revolutionizing electronic data storage. In this paper, we review recent developments in the research on GMR of low dimensional structures. We describe the magnetoresistance properties of magnetic multilayers, multilayered nanowires and nonopillars, etc.

• Journal of Magnetics
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• v.13 no.1
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• pp.11-18
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• 2008

This study examines a new macroscopic ferrimagnet, Co-TbN. This ferrimagnet, consisting of two metallic phases, Co and TbN, demonstrated the typical macroscopic ferrimagnet properties of a magnetic compensation point and a negative giant magnetoresistance (GMR). The Co-TbN system with 32% TbN composition showed 0.72% GMR in magnetic fields up to 8 kOe at room temperature and 9% GMR in 40 kOe at 250 K. In the Co-TbN system, GMR exhibited a different dependence on temperature from that of ordinary GMR materials whose negative magnetoresistance decreases with increasing temperature. In contrast to ordinary GMR materials whose negative magnetoresistance decreases with increasing temperature, the GMR effect in the Co-TbN system increased with increasing temperature, due to the increase of ferromagnetic alignment of the Co and TbN in the magnetic field caused by the decreased exchange coupling with increasing temperature.

• Journal of Magnetics
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• v.17 no.3
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• pp.214-218
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• 2012

The water level and temperature properties for the cooling system of potassium titanyl phosphate laser systems were observed. The middle point of the GMR-SV magnetoresistance curve is set in the neighborhood of high magnetic sensitivity (2.8 %/Oe). The experimental results for resistance dependence on water height and temperature showed linear regions with rates of 0.4 ${\Omega}/mm$ and 0.1 ${\Omega}/^{\circ}C$, respectively. The proposed results were found to be for adjusting the water level and temperature in the laser cooling system.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.950-953
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• 1999

Spin tunneling giant magnetoresistance effect was studied to utilize in the application of random access memory. Ferromagnetic/Insulator/Ferromagnetic films were sputtered on glass substrates and perpendicular current was applied. Measurements of magneto- resistance of the junction showed 8.6% of MR ratio. Voltage output depends on the magnetization directions of the write line and read line, thus enabling the system to be used as a random access memory

• Journal of Magnetics
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• v.22 no.1
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• pp.7-13
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• 2017

The magnetoresistance (MR) properties of antiferromagnetic (AFM) IrMn based giant magnetoresistance-spin valve (GMR-SV) was investigated in view point of the artificial rotation effect of ferromagnetic (FM) layer in the plane induced by an applied field during the post annealing temperature. The MR curves measured with an azimuthal angle region of ${\phi}=0^{\circ}-360^{\circ}$ are depended on the annealing temperature and the magnetization easy axis of two free NiFe layers and two pinned NiFe layers in dual-type GMR-SV film. Especially, the annealing temperature and sample rotation angle(${\theta}$ ) maintained to the magnetic sensitivity (MS) of 1.4 %/Oe with an isotropic region angle of $110^{\circ}$ are $100^{\circ}C$ and $90^{\circ}$, respectively.

• Journal of Magnetics
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• v.5 no.4
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• pp.135-138
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• 2000

In order to study the effect of the magnetic anisotropy on the giant magnetoresistance in a Co/Cu multilayered system, the angle dependent magnetoresistance (MR) was measured. The experimental results showed that the maximum MR ratio depends on the angle between the direction of the applied field and the easy axis. The angular modulation of the MR ratio can be explained by the alignments of the two 'effective' magnetization vectors that are bound to their own easy axes. Two maxima observed in MR loops at the second antiferromagnetic maximum are discussed in relation to the magnetic anisotropy, The simulated results under the assumption of the existence of two in-plane easy axes in the sample are compared with the experiments.

• Proceedings of the Korean Magnestics Society Conference
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• 2015.05a
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• pp.156-157
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• 2015

we have presented the enhanced interlayer tunneling magnetoresistance in doped $La_{1+2x}Sr_{2-2x}Mn_2O_7$ single crystal below $T_C$. The drastically out-of-plane magnetoresistance observed in magnetic fields perpendicular to the bilayers indicates that spin-polarized magnetic layers in single crystal show as a stack of ordered spin valve.