• Title/Summary/Keyword: generated voltage

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Analysis of Electromagnetic Wave Scattering Characteristics of Dielectric Barrier Discharge Plasma (유전체 장벽 방전 플라즈마의 전자파 산란 특성 분석)

  • Lee, Soo-Min;Oh, Il-Young;Hong, Yong-Jun;Yook, Jong-Gwan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.3
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    • pp.324-330
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    • 2013
  • This paper presented measurement results of scattering characteristics of dielectric barrier discharge (DBD) plasma at atmospheric pressure. In this paper, plasma actuator is fabricated by parallel connecting of basic configuration of DBD plasma actuator, then plasma could be generated by applying 14 kV, 4 kHz of high voltage generator. In order to measure the scattering characteristics of DBD plasma, in this paper, two horn antennas and vector network analyzer are used to compare the S-parameter. Because of the structure of fabricated plasma generator, different result is obtained as antenna polarization changes. When antenna polarization is parallel to electrodes of plasma generator, the scattered field is reduced by 2 dB in maximum. In addition, for parallel polarization case, PEC is set up behind the plasma generator to measure backward scattered field. When the observation angles are $40^{\circ}C$ and $60^{\circ}C$, the amount of reduced scattered field is 2 dB in maximum at 5 GHz.

A Study on Malfunction Mode and Failure Rate Properties of Semiconductor by Impact of Pulse Repetition Rate (펄스 반복률에 의한 반도체 소자의 오동작 모드와 고장률에 관한 연구)

  • Park, Ki-Hoon;Bang, Jeong-Ju;Kim, Ruck-Woan;Huh, Chang-Su
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.6
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    • pp.360-364
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    • 2015
  • Electronic systems based on solid state devices have changed to be more complicated and miniaturized as the electronic systems developed. If the electronic systems are exposed to HPEM (high power electromagnetics), the systems will be destroyed by the coupling effects of electromagnetic waves. Because the HPEM has fast rise time and high voltage of the pulse, the semiconductors are vulnerable to external stress factor such as the coupled electromagnetic pulse. Therefore, we will discuss about malfunction behavior and DFR (destruction failure rate) of the semiconductor caused by amplitude and repetition rate of the pulse. For this experiment, the pulses were injected into the pins of general purpose IC due to the fact that pulse injection test enables the phenomenon after the HPEM is coupled to power cables. These pulses were produced by pulse generator and their characteristics are 2.1 [ns] of pulse width, 1.1 [ns] of pulse rise time and 30, 60, 120 [Hz] of pulse repetition rate. The injected pulses have changed frequency, period and duty ratio of output generated by Timer IC. Also, as the pulse repetition rate increases the breakdown threshold point of the timer IC was reduced.

Piezoelectric nanocomposite sensors assembled using zinc oxide nanoparticles and poly(vinylidene fluoride)

  • Dodds, John S.;Meyers, Frederick N.;Loh, Kenneth J.
    • Smart Structures and Systems
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    • v.12 no.1
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    • pp.55-71
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    • 2013
  • Structural health monitoring (SHM) is vital for detecting the onset of damage and for preventing catastrophic failure of civil infrastructure systems. In particular, piezoelectric transducers have the ability to excite and actively interrogate structures (e.g., using surface waves) while measuring their response for sensing and damage detection. In fact, piezoelectric transducers such as lead zirconate titanate (PZT) and poly(vinylidene fluoride) (PVDF) have been used for various laboratory/field tests and possess significant advantages as compared to visual inspection and vibration-based methods, to name a few. However, PZTs are inherently brittle, and PVDF films do not possess high piezoelectricity, thereby limiting each of these devices to certain specific applications. The objective of this study is to design, characterize, and validate piezoelectric nanocomposites consisting of zinc oxide (ZnO) nanoparticles assembled in a PVDF copolymer matrix for sensing and SHM applications. These films provide greater mechanical flexibility as compared to PZTs, yet possess enhanced piezoelectricity as compared to pristine PVDF copolymers. This study started with spin coating dispersed ZnO- and PVDF-TrFE-based solutions to fabricate the piezoelectric nanocomposites. The concentration of ZnO nanoparticles was varied from 0 to 20 wt.% (in 5 % increments) to determine their influence on bulk film piezoelectricity. Second, their electric polarization responses were obtained for quantifying thin film remnant polarization, which is directly correlated to piezoelectricity. Based on these results, the films were poled (at 50 $MV-m^{-1}$) to permanently align their electrical domains and to enhance their bulk film piezoelectricity. Then, a series of hammer impact tests were conducted, and the voltage generated by poled ZnO-based thin films was compared to commercially poled PVDF copolymer thin films. The hammer impact tests showed comparable results between the prototype and commercial samples, and increasing ZnO content provided enhanced piezoelectric performance. Lastly, the films were further validated for sensing using different energy levels of hammer impact, different distances between the impact locations and the film electrodes, and cantilever free vibration testing for dynamic strain sensing.

Long-term and Short-term AC Treeing Breakdown of Epoxy/Micro-Silica/Nano-Silicate Composite in Needle-Plate Electrodes

  • Park, Jae-Jun
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.5
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    • pp.252-255
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    • 2012
  • In order to characterize insulation properties of epoxy/micro-silica/nano-silicate composite (EMNC), long-term and short-term AC treeing tests were carried out undr non-uniform electric field generated between needle-plate electrodes. In a long-term test, a 10 kV (60 Hz) electrical field was applied to the specimen positioned between the electrodes with a distance of 2.7 mm in an insulating oil bath at $30^{\circ}C$, and a typical branch type electrical tree was observed in the neat epoxy resin and breakdown took place at 1,042 min after applying the 10 kVelectrical field. Meanwhile, the spherical tree with the tree length of $237{\mu}m$ was seen in EMNC-65-0.3 at 52,380 min (36.4 day) and then the test was stopped because the tree propagation rate was too low. In the short-term test, an electrial field was applied to a 3.5 mm-thick specimen at an increasing voltage rate of 0.5 kV/s until breakdown in insulating oil bath at $30^{\circ}C$ and $130^{\circ}C$, and the data was estimated by Weibull statistical analysis. The electrical insulation breakdown strength for neat epoxy resin was 1,763 kV/mm at $30^{\circ}C$, while that for EMNC-65-0.3 was 2,604 kV/mm, which was a modified value of 47%. As was expected, the breakdown strength decreased at higher test temperatures.

Implementation of Neuromorphic System with Si-based Floating-body Synaptic Transistors

  • Park, Jungjin;Kim, Hyungjin;Kwon, Min-Woo;Hwang, Sungmin;Baek, Myung-Hyun;Lee, Jeong-Jun;Jang, Taejin;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.2
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    • pp.210-215
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    • 2017
  • We have developed the neuromorphic system that can work with the four-terminal Si-based synaptic devices and verified the operation of the system using simulation tool and printed-circuit-board (PCB). The symmetrical current mirrors connected to the n-channel and p-channel synaptic devices constitute the synaptic integration part to express the excitation and the inhibition mechanism of neurons, respectively. The number and the weight of the synaptic devices affect the amount of the current reproduced from the current mirror. The double-stage inverters controlling delay time and the NMOS with large threshold voltage ($V_T$) constitute the action-potential generation part. The generated action-potential is transmitted to next neuron and simultaneously returned to the back gate of the synaptic device for changing its weight based on spike-timing-dependent-plasticity (STDP).

Fluctuation in Plasma Nanofabrication

  • Shiratani, Masaharu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.96-96
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    • 2016
  • Nanotechnology mostly employs nano-materials and nano-structures with distinctive properties based on their size, structure, and composition. It is quite difficult to produce nano-materials and nano-structures with identical sizes, structures, and compositions in large quantities, because of spatiotemporal fluctuation of production processes. In other words, fluctuation is the bottleneck in nanotechnology. We propose three strategies to suppress such fluctuations: employing 1) difference between linear and nonlinear phenomena, 2) difference in time constants, and 3) nucleation as a bottleneck phenomenon. We are also developing nano- and micro-scale guided assembly using plasmas as a plasma nanofabrication.1-5) We manipulate nano- and micro-objects using electrostatic, electromagnetic, ion drag, neutral drag, and optical forces. The accuracy of positioning the objects depends on fluctuation of position and energy of an object in plasmas. Here we evaluate such fluctuations and discuss the mechanism behind them. We conducted in-situ evaluation of local plasma potential fluctuation using tracking analysis of fine particles (=objects) in plasmas. Experiments were carried out with a radio frequency low-pressure plasma reactor, where we set two quartz windows at the top and bottom of the reactor. Ar plasmas were generated at 200 Pa by applying 13.56MHz, 450V peak-to-peak voltage. The injected fine particles were monodisperse methyl methacrylate-polymer spheres of $10{\mu}m$ in diameter. Fine particles were injected into the reactor and were suspended around the plasma/sheath boundary near the powered electrode. We observed binary collision of fine particles with a high-speed camera. The frame rate was 1000-10000 fps. Time evolution of their distance from the center of mass was measured by tracking analysis of the two particles. Kinetic energy during the collision was obtained from the result. Potential energy formed between the two particles was deduced by assuming the potential energy plus the kinetic energy is constant. The interaction potential is fluctuated during the collision. Maximum amplitude of the fluctuation is 25eV, and the average is 8eV. The fluctuation can be caused by neutral molecule collisions, ion collisions, and fluctuation of electrostatic force. Among theses possible causes, fluctuation of electrostatic force may be main one, because the fine particle has a large negative charge of -17000e and the corresponding electrostatic force is large compared to other forces.

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Electrode formation using Light induced electroless plating in the crystalline silicon solar cells

  • Jeong, Myeong-Sang;Gang, Min-Gu;Lee, Jeong-In;Kim, Dong-Hwan;Song, Hui-Eun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.347.1-347.1
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    • 2016
  • Screen printing is commonly used to form the electrode for crystalline silicon solar cells. However, it has caused high resistance and low aspect ratio, resulting in decrease of conversion efficiency. Accordingly, Ni/Cu/Ag plating method could be applied for crystalline silicon solar cells to reduce contact resistance. For Ni/Cu/Ag plating, laser ablation process is required to remove anti-reflection layers prior to the plating process, but laser ablation results in surface damage and then decrease of open-circuit voltage and cell efficiency. Another issue with plating process is ghost plating. Ghost plating occurred in the non-metallized region, resulting from pin-hole in anti-reflection layer. In this paper, we investigated the effect of Ni/Cu/Ag plating on the electrical properties, compared to screen printing method. In addition, phosphoric acid layer was spin-coated prior to laser ablation to minimize emitter damage by the laser. Phosphorous elements in phosphoric acid generated selective emitter throughout emitter layer during laser process. Then, KOH treatment was applied to remove surface damage by laser. At this step, amorphous silicon formed by laser ablation was recrystallized during firing process and remaining of amorphous silicon was removed by KOH treatment. As a result, electrical properties as Jsc, FF and efficiency were improved, but Voc was lower than screen printed solar cells because Voc was decreased due to surface damage by laser process. Accordingly, we expect that efficiency of solar cells could be improved by optimization of the process to remove surface damage.

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Design and Implementation of True Random Noise Radar System

  • Min, Woo-Ki;Kim, Cheol-Hoo;Lukin, Constantin A.;Kim, Jeong-Phill
    • Journal of electromagnetic engineering and science
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    • v.9 no.3
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    • pp.130-140
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    • 2009
  • The design theory and experimental results of a true random noise radar system are presented in this paper. Target range information can be extracted precisely by correlation processing between the delayed reference and the signal received from a target, and the velocity information by the Doppler processing with successive correlation data. A K-band noise radar system was designed using random FM noise signal, and the characteristics of the fabricated system were examined with laboratory and outdoor experiments. A C-band random FM noise signal was generated by applying a low-frequency white Gaussian noise source to VCO(Voltage Controlled Oscillator), and a K-band Tx noise signal with 100 MHz bandwidth was obtained by using a following frequency multiplier. Two modified wave-guide horn arrays were designed and fabricated, and used for the Tx and Rx antennas. The required amount of Tx/Rx isolation was attained by using a coupling cancellation circuit as well as keeping them apart with predetermined spacing. A double down-conversion scheme was used in the Rx and reference channels, respectively, for easy post processing such as correlation and Doppler processing. The implemented noise radar performance was examined with a moving bicycle and a very high-speed target with a velocity of 150 m/s. The results extracted by the Matlab simulation using the logging data were found to be in a reasonable agreement with the expected results.

Enhanced Photo Current in n-ZnO/p-Si Diode Via Embedded Ag Nanoparticles for the Solar Cell Application

  • Ko, Young-Uk;Yun, Ho-Jin;Jeong, Kwang-Seok;Kim, Yu-Mi;Yang, Seung-Dong;Kim, Seong-Hyeon;Kim, Jin-Sup;An, Jin-Un;Eom, Ki-Yun;Lee, Hi-Deok;Lee, Ga-Won
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.1
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    • pp.35-40
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    • 2015
  • In this study, an n-ZnO/p-Si heterojunction diode with embedded Ag nanoparticles was fabricated to investigate the possible improvement of light trapping via the surface plasmon resonance effect for solar cell applications. The Ag nanoparticles were fabricated by the physical sputtering method. The acquired current-voltage curves and optical absorption spectra demonstrated that the application of Ag nanoparticles in the n-ZnO/p-Si interface increased the photo current, particularly in specific wavelength regions. The results indicate that the enhancement of the photo current was caused by the surface plasmon resonance effect generated by the Ag nanoparticles. In addition, minority carrier lifetime measurements showed that the recombination losses caused by the Ag nanoparticles were negligible. These results suggest that the embedding of Ag nanoparticles is a powerful method to improve the performance of n-ZnO/p-Si heterojunction solar cells.

A Study Evaluating Welding Quality in Pressure Vessel Using Mahalanobis Distance (마할라노비스 거리를 이용한 압력용기 용접부 용접성 평가에 관한 연구)

  • Kim, Ill Soo;Lee, Jong Pyo;Lee, Ji Hye;Jung, Sung Myoung;Kim, Young Su;Chand, Reenal Ritesh;Park, Min Ho
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.22 no.1
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    • pp.22-28
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    • 2013
  • Robotic GMA (Gas Metal Arc) welding process is one of widely acceptable metal joining process. The heat and mass inputs are coupled and transferred by the weld arc to the molten weld pool and by the molten metal that is being transferred to the weld pool. The amount and distribution of the input energy are basically controlled by the obvious and careful choices of welding process parameters in order to accomplish the optimal bead geometry and the desired quality of the weldment. To make effective use of automated and robotic GMA welding, it is imperative to predict online faults for bead geometry and welding quality with respect to welding parameters, applicable to all welding positions and covering a wide range of material thickness. MD (Mahalanobis Distance) technique was employed for investigating and modeling the GMA welding process and significance test techniques were applied for the interpretation of the experimental data. To successfully accomplish this objective, two sets of experiment were performed with different welding parameters; the welded samples from SM 490A steel flats. First, a set of weldments without any faults were generated in a number of repeated sessions in order to be used as references. The experimental results of current and voltage waveforms were used to predict the magnitude of bead geometry and welding quality, and to establish the relationships between weld process parameters and online welding faults. Statistical models developed from experimental results which can be used to quantify the welding quality with respect to process parameters in order to achieve the desired bead geometry based on weld quality criteria.