• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.750-757
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• 2002

Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study, ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$ thin films have been prepared by spin coating method using photosensitive sol solution. Strontium ethoxide, tertramethylheptanedionato bismuth and tantalum ethoxide were used as starting materials. As UV exposure time to the SBT thin film increased, the UV absorption peak intensity of metal ${\beta}$-diketonate decreased due to reduced solubility by M-O-M bond formation. Solubility difference by UV irradiation on SBT thin film allows to obtain a fine patterning of thin film. Also, The ferroelectric properties of the UV irradiated SBT thin films were superior to those of the no-UV irradiated films.

• Korean Journal of Materials Research
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• v.25 no.2
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• pp.107-112
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• 2015

The oxide films formed on etched aluminum foils play an important role as dielectric layers in aluminum electrolytic capacitors. $Y_2O_3$-doped $ZrO_2$ (YZ) films were coated on the etched aluminum foils by sol-gel dip coating, and the electrical properties of YZ-coated Al foils were characterized. YZ films annealed at $450^{\circ}C$ were crystallized into a cubic phase, and as the $Y_2O_3$ doping content increased, the unit cell of $ZrO_2$ expanded and the grain size decreased. The etch pits of Al foils were filled by YZ sol when it dried at atmospheric pressure after repeating for several times, but this step could essentially be avoided when being dried in a vacuum. YZ-coated foils indicated that the specific capacitance and dissipation factor were $2-2.5{\mu}F/cm^2$ and 2-4 at 1 kHz, respectively, and the leakage current and withstanding voltage of films approximately 200 nm thick were $5{\times}10^{-4}A$ at 21 V and 22 V, respectively. After being anodized at 500 V, the foils exhibited a specific capacitance and dissipation factor of $0.6-0.7{\mu}F/cm^2$ and 0.1-0.2, respectively, at 1 kHz, while the leakage current and withstanding voltage were $2{\times}10^{-4}-3{\times}10^{-5}A$ at 400 V and 420-450 V, respectively. This suggests that YZ film is a promising dielectric that can be used in high voltage Al electrolytic capacitors.

• Applied Chemistry for Engineering
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• v.17 no.6
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• pp.580-585
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• 2006

UV-thermal dually curable coating materials were prepared by the sol-gel method. Nano-sized colloidal boehmite was treated with various organo silane coupling agents. These materials could be well dispersed in various alcohols and relatively polar organic solvents such as tetrahydrofuran and acetonitrile. The coating films were prepared by a spin coating method on various substrates, which were characterized by FT-IR, Si/Al CP MAS NMR spectra, UV-Vis spectrophotometer, FE-SEM, Taber abraser, haze meter, and pencil hardness tester. The effects of molar ratio and types of silane coupling agents, curing method and ion-shower treatment were investigated. Dually curable coating method offered an optimally good quality film in both hardness and transmittance. The transparency and the hardness of the prepared films were increased with amounts of 3-(trimethoxysilyl)propylmethacrylate, and (3-glycidyloxypropyl)trimethoxysilane, respectively. The adhesion between coated layer and substrate could be enhanced by ion-shower treatment.

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.13-18
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• 2004

$La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrodes were prepared on ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$(SBT) thin films by spin coating method using photosensitive sol-gel solution. Self-patterning technique of photosensitive sol-gel solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. Lanthanum(III) 2-methoxyethoxide, Stronitium diethoxide. Cobalu(II)2-methoxyethoxide were used as starting materials for LSCO electrode. UV irradiation on LSCO thin films lead to decrease solubility by M-O-M bond formation and the solubility difference allows us to obtain self-patternine. There was little composition change of the LSCO thin films between before leaching and after leaching in 2-methoxyethanol. The lowest resistivity of LSCO thin films deposited on $SiO_2$/Si substrate was $1.1{\times}10^{-2}{\Omega}cm$ when the thin film was ennealed at $740^{\circ}C$. The values of Pr/Ps and 2Pr of LSCO/SBT/Pt capacitor on the applied voltage of 5V were 0.51, 8.89 ${\mu}C/cm^2$, respectively.

• Bulletin of the Korean Chemical Society
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• v.29 no.5
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• pp.1038-1042
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• 2008

Mono and multilayer TiO2(Fe, $PEG_{600}$) films were deposited by the dip-coating on $SiO_2$/glass substrate using sol-gel method. In an attempt to improve the antibacterial properties of doped $TiO_2$ films, the influence of the iron oxides and polyethilenglycol ($PEG_{600}$) on the morphological, optical, surface chemical composition and biological properties of nanostructured layers was studied. Complementary measurements were performed including Spectroscopic Ellipsometry (SE), Scanning Electron Microscopy (SEM) coupled with the fractal analysis, X-Ray Photoelectron Spectroscopy (XPS) and antibacterial tests. It was found that different concentrations of Fe and $PEG_{600}$ added to coating solution strongly influence the porosity and morphology at nanometric scale related to fractal behaviour and the elemental and chemical states of the surfaces as well. The thermal treatment under oxidative atmosphere leads to films densification and oxides phase stabilization. The antibacterial activity of coatings against Escherichia Coli bacteria was examined by specific antibacterial tests.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.16.1-16.1
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• 2009

We have fabricated solution processed oxide semiconductor active layer for thin film transistors (TFTs). The oxide semiconductor layers were prepared by ink-jet printing the sol-gel precursor solution based on doped-ZnO. Inorganic ZnO-based thin films have drawn significant attention as an active channel layer for TFTs applications alternative to conventional Si-based materials and organic semiconducting materials, due to their wide energy band gap, optical transparency, high mobility, and better stability. However, in spite of such excellent device performances, the fabrication methods of ZnO related oxide active layer involve high cost vacuum processes such as sputtering and pulsed laser deposition. Herein we introduced the ink-jet printing technology to prepare the active layers of oxide semiconductor. Stable sol-gel precursor solutions were obtained by controlling the composition of precursor as well as solvents and stabilizers, and their influences on electrical performance of the transistors were demonstrated by measuring electrical parameters such as off-current, on-current, mobility, and threshold voltage. Microstructure and thermal behavior of the doped ZnO films were investigated by SEM, XRD, and TG/DTA. Furthermore, we studied the influence of the ink-jet printing conditions such as substrate temperature and surface treatment on the microstructure of the ink-jet printed active layers and electrical performance. The mobility value of the device with optimized condition was about 0.1-1.0 $cm^2/Vs$ and the on/off current ratio was about $10^6$. Our investigations demonstrate the feasibility of the ink-jet printed oxide TFTs toward successful application to cost-effective and mass-producible displays.

• Journal of the Korean Geotechnical Society
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• v.18 no.5
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• pp.229-236
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• 2002

In this study, the characteristics of chemical grouting, such as solidification, penetrability, were analyzed experimentally by grain size of grout materials and permeability, relative density of the ground. For evaluating applicability of grout material, solidification tests and permeability tests were peformed. From the results of the tests, effective solidification ratio and penetrability ratio of Micro Cement were 75% and 86% respectively when ground permeability was in the range of 10$^{-4}$ to 10$^{-2}$cm/sec. On the other hand, effective solidification ratio and penetrability ratio of Ordinary Portland Cement (OPC) were both lower than 50%. When penetrability of grout material is needed for improvement of dam foundation and soft ground, application of Micro Cement is much superior to that of the other materials. The results of the grouting tests in the hydrodynamic ground show that the solidification effect of long gel-time grout material is excellent as injection pressure increases when groundwater velocity is relatively low. But when groundwater velocity is relatively high, the solidifcation effect of long gel-time grout material is very poor because most grout materials are outflowed.

• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.51-56
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• 2005

Ferroelectric Bi$_{3.35}$Sm$_{0.65}$Ti$_{3}$O$_{12}$(BSmT) thin films were synthesized using a sol-gel process. Bi(TMHD)$_{3}$, Sm$_{5}$(O$^{i}$Pr)13, Ti(O$^{i}$Pr)4 were used as the precursors, which were dissolved in 2­methoxyethanol. The BSmT thin films were deposited on Pt/TiO$_{x}$/SiO$_{2}$/Si substrates by spin­coating. The electrical properties of the thin films were enhanced using rapid thermal annealing process (RTA) at 600 $^{circ}$C for 1 min in O$_{2}$. Thereafter, the thin films were annealed from 600 to 720 $^{circ}$C in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The remanent polarization value of the BSmT thin films annealed at 720 $^{circ}$C after the RTA treatment was 35.31 $\mu$C/cmz at an applied voltage of 5 V.

• Korean Journal of Materials Research
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• v.12 no.7
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• pp.573-579
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• 2002

Stoichiometric mullite ($3Al_2$$O_3$. $2SiO_2$) precursor sol has been prepared by sol-gel method. The effects of the precursor pH and sintering temperature on the synthesizing behavior and morphology of mullite have been studied. Mullite precursor sol was prepared by dissolution of aluminum nitrate enneahydrate (Al($NO_3$)$_3$.9H$_2O) into the mixture of silica sol. Precursor pH of the sols was controlled to acidic condition ($PH\leq$ 1~1.5) and to basic condition ($pH\geq$8.5~9). The synthesized aluminosilicate sols were formed under 20 MPa pressure after drying at $150^{\circ}C$ for 24 hours, and then sintered for 3hours in the temperature range of $1100~1600^{\circ}C$. From TGA/DTA analysis, total weight loss in the aluminosilicate gel of the acidic sample was (equation omitted) 56% and that of the basic sample was (equation omitted) 85%, indicating that the synthesizing temperature of mullite phase for acidic and basic samples was above $1200^{\circ}C$ and $1300^{\circ}C$, respectively. The morphologies of the synthesized mullite were fine and needle-like (or rod-like) for acidic sample, and granular for basic sample that has been sintered above $1300^{\circ}C$. It was found that the morphology of mullite particle was predominantly governed by precursor pH and sintering temperature.

• Korean Journal of Materials Research
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• v.26 no.2
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• pp.73-78
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• 2016

$TiO_2$ nanoparticles were synthesized by a sol-gel process using titanium tetra isopropoxide as a precursor at room temperature. Ag-doped $TiO_2$ nanoparticles were prepared by photoreduction of $AgNO_3$ on $TiO_2$ under UV light irradiation and calcinated at $400^{\circ}C$. Ag-doped $TiO_2$ nanoparticles were characterized for their structural and morphological properties by X-ray diffractometry (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and transmission electron microscopy (TEM). The photocatalytic properties of the $TiO_2$ and Ag-doped $TiO_2$ nanoparticles were evaluated according to the degree of photocatalytic degradation of gaseous benzene under UV and visible light irradiation. To estimate the rate of photolysis under UV (${\lambda}=365nm$) and visible (${\lambda}{\geq}410nm$) light, the residual concentration of benzene was monitored by gas chromatography (GC). Both undoped/doped nanoparticles showed about 80 % of photolysis of benzene under UV light. However, under visible light irradiation Ag-doped $TiO_2$ nanoparticles exhibited a photocatalytic reaction toward the photodegradation of benzene more efficient than that of bare $TiO_2$. The enhanced photocatalytic reaction of Ag-doped $TiO_2$ nanoparticles is attributed to the decrease in the activation energy and to the existence of Ag in the $TiO_2$ host lattice, which increases the absorption capacity in the visible region by acting as an electron trapper and promotes charge separation of the photoinduced electrons ($e^-$) and holes ($h^+$). The use of Ag-doped $TiO_2$ nanoparticles preserved the option of an environmentally benign photocatalytic reaction using visible light; These particles can be applicable to environmental cleaning applications.