• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.5 no.4
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• pp.276-284
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• 2000

Distributions of organic carbon (Co$_{org}$), organic nitrogen (N$_{org}$), and heavy metals (Zn, Pb, Cr, Cu, Mn) were investigated in Lake Shihwa sediments. Surface and core samples were collected in April and September, 1997 and March, 1998 for the study. The results show that these components contents are variable with sampling timeand station. In surface sediments, both Co$_{org}$ and N$_{org}$ have similar distribution pattern in which their high contents found in stations located near the land, indicating that the streams and industrial wastes seem to act as point sources. The C$_{org}$ contents are linearly related with those of heavy metals. It appears, therefore, that the distribution of heavy metals may be partly controlled by a complex interplay of biogenic, terrestial, and anthropogenic factors. The C/N ratios from three stations are in the range of 3-32, with an average of 13.2. Vertical profiles of heavy metals in sediment cores are similar to those of C$_{org}$ and N$_{org}$. Copper content of sediments is enriched compared to that of reported value before dike construction, but Zn and Mn are not deposited considerably. Especially, Pb content show less variable. Currently, anthropogenic effects of industrial complex may not reached to drainage gate area where heavy metal contents are comparable with those adjacent to coastal sediments.

• Journal of Technologic Dentistry
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• v.36 no.3
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• pp.141-147
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• 2014

Purpose: Dental casting #Gr I (Co-25Cr-5Mo-3Sn-1Mn-1Si), #Gr II (Co-25Cr-5Mo-5Cu-1Mn -1Si) and #Gr III (Co-25Cr-5Mo-3Sn-5Cu-1Mn-1Si) master alloys of granule type were manufactured the same as manufacturing processes for dental casting Ni-Cr and Co-Cr-Mo based alloys of ingot type. These alloys were analyzed melting processes with heating time of high frequency induction centrifugal casting machine using infrared thermal image analyzer. Methods: These alloys were manufactured such as; alloy design, the first master alloy manufatured using vacuum arc casting machine, melting metal setting in crucible, melting in VIM, pouring in the mold of bar type, cutting the gate and runner bar and polishing. These alloys were put about 30g/charge in the ceramic crucible of high frequency induction centrifugal casting machine and heat, Infrared thermal image analyzer indicated alloys in the crucible were set and operated. Results: The melting temperatures of these alloys measuring infrared thermal image analyzer were decreased in comparison with remanium$^{(R)}$ GM 800+, vera PDI$^{TM}$, Biosil$^{(R)}$ f, WISIL$^{(R)}$ M type V, Ticonium 2000 alloys of ingot type and vera PDS$^{TM}$(Aabadent, USA), Regalloy alloys of shot type. Conclusion: Co-Cr-Mo based alloy in addition to Sn(#Gr I alloy) were decreased the melting temperature with heating time of high frequency induction centrifugal casting machine using infrared thermal image analyzer.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.434-435
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• 2012

Plasma enhanced chemical vapor deposition (PECVD) silicon dioxide thin films have many applications in semiconductor manufacturing such as inter-level dielectric and gate dielectric metal oxide semiconductor field effect transistors (MOSFETs). Fundamental chemical reaction for the formation of SiO2 includes SiH4 and O2, but mixture of SiH4 and N2O is preferable because of lower hydrogen concentration in the deposited film [1]. It is also known that binding energy of N-N is higher than that of N-O, so the particle generation by molecular reaction can be reduced by reducing reactive nitrogen during the deposition process. However, nitrous oxide (N2O) gives rise to nitric oxide (NO) on reaction with oxygen atoms, which in turn reacts with ozone. NO became a greenhouse gas which is naturally occurred regulating of stratospheric ozone. In fact, it takes global warming effect about 300 times higher than carbon dioxide (CO2). Industries regard that N2O is inevitable for their device fabrication; however, it is worthwhile to develop a marginable nitrous oxide free process for university lab classes considering educational and environmental purpose. In this paper, we developed environmental friendly and material cost efficient SiO2 deposition process by substituting N2O with O2 targeting university hands-on laboratory course. Experiment was performed by two level statistical design of experiment (DOE) with three process parameters including RF power, susceptor temperature, and oxygen gas flow. Responses of interests to optimize the process were deposition rate, film uniformity, surface roughness, and electrical dielectric property. We observed some power like particle formation on wafer in some experiment, and we postulate that the thermal and electrical energy to dissociate gas molecule was relatively lower than other runs. However, we were able to find a marginable process region with less than 3% uniformity requirement in our process optimization goal. Surface roughness measured by atomic force microscopy (AFM) presented some evidence of the agglomeration of silane related particles, and the result was still satisfactory for the purpose of this research. This newly developed SiO2 deposition process is currently under verification with repeated experimental run on 4 inches wafer, and it will be adopted to Semiconductor Material and Process course offered in the Department of Electronic Engineering at Myongji University from spring semester in 2012.

• Journal of Sensor Science and Technology
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• v.12 no.2
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• pp.72-78
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• 2003

To observe the effect of excitation coil pitch on the micro fluxgate magnetic sensor, two sensors are fabricated using multi layer board process and the pitch distance of excitation coil are $260\;{\mu}m$ and $520\;{\mu}m$, respectively. The fluxgate sensor consists of five PCB stack layers including one layer of magnetic core and four layers of excitation and pick-up coils. The center layer as magnetic core is made of a Co-based amorphous magnetic ribbon with extremely high DC permeability of ${\sim}100,000$ and has a rectangular-ring shape to minimize the magnetic flux leakage. Four outer layers as excitation and pick-up coils have a planar solenoid structure and are made of copper foil. In case of the fluxgate sensor having the excitation coil pitch of $260\;{\mu}m$, excellent linear response over the range of $-100\;{\mu}T$ to $+100\;{\mu}T$ is obtained with sensitivity of 780 V/T at excitation sine wave of $3V_{p_p}$ and 360 kHz. The chip size of the fabricated sensing element is $7.3\;{\times}\;5.7\;mm^2$. The very low power consumption of ${\sim}8\;mW$ is measured. This magnetic sensor is very useful for various applications such as: portable navigation systems, telematics, VR game and so on.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.77-78
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• 2006

최근 flexible OLED의 구동에 사용하기 위한 유기박막트랜지스터(Organic Thin Film Transistor, OTFT)의 연구에서는 용매에 용해되어 spin coating이 가능한 재료의 개발에 관심을 두고 있다. 현재 pentacene으로는 아직 spin coating으로 제작할 수 있는 상용화된 제품이 없고 spin coating이 가능한 활성층 물질(active material)로 P3HT가 쓰이고 있다. 본 연구에서는 용해 가능한 P3HT 활성층 물질과 여러 종류의 용해 가능한 게이트 절연물(gate insulator, Gl)을 사용하여 안정된 소자를 구현할 수 있는 공정을 개발하는 목적으로 metal-insulator-semironductor(MIS) 소자를 제작하여 C-V 특성을 측정하고 분석하였다. 먼저 7mm${\times}$7mm 크기의 pyrex glass 시편 위에 바닥 전극으로 $1600{\AA}$ Au을 증착하고 spin coating 방식을 이용하여 PVP, PVA, PVK, BCB, Pl의 5종류의 게이트 절연층을 각각 형성하였고 그 위에 같은 방법으로 P3HT를 코팅하였다. P3HT 코팅 시 bake 공정의 유무와 spin rpm의 변화에 따른 P3HT의 두께를 측정하였다. Gl의 종류별로 주파수에 따른 capatltancc를 측정하여 비교, 분석하였다. C-V 측정 결과 PVP, PVA, PVK, BCB, Pl의 단위 면적당 capacitance 값은 각각 1.06, 2.73, 2.94, 3.43, $2.78nF/cm^2$로 측정되었다. Threshold voltage, $V_{th}$는 각각 -0.4, -0.7, -1.6, -0.1, -0.2V를 나타냈다. 주파수에 따른 capacitance 변화율을 측정한 결과 Gl 물질 모두 주파수가 높을수록 capacitance가 점점 감소하는 경향을 보였으나 1${\sim}$2nF 이내의 범위에서 작은 변화율만 나타냈다. P3HT의 두께와 bake 온도를 변화시켜 C-V 값을 측정한 결과 차이는 없었다. FE-SEM으로 관찰한 결과에서도 두께나 온도에 따른 P3HT의 표면 morphology 차이를 확인할 수 없었다. 본 연구에서 PVK와 P3HT의 조합이 수율(yield)면에서 가장 안정적이면서 $3.43\;nF/cm^2$의 가장 높은 capacitance 값을 나타내고 $V_{th}$ 값 또한 -1.6V로 가장 낮은 값을 보였다.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.24 no.2
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• pp.139-145
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• 2024

This paper presents the design of a voltage controlled oscillator (VCO) which is one of the key building blocks in modern wireless communication systems with small VCO gain (K_vco) variation. To compensate conventional large K_vco variation, a series varactor bank has been added to the conventional LC-tank with parallel capacitor bank array. And also, in order to achieve excellent phase noise performance while maintaining wide tuning range, a mixed coarse/fine tuning scheme(series varactor array and parallel capacitor array) is chosen. The switched varactor array bank is controlled by the same digital code for switched capacitor array without additional digital circuits. For use at a low voltage of 1.2V, the proposed current reference circuit in this paper used a current reference circuit for safety with the common gate removed more safely. Implemented in a TSMC 0.13㎛ CMOS RF technology, the proposed VCO can be tuned from 4.4GH to 5.3GHz with the K_vco (VCO gain ) variation of less than 9.6%. While consuming 3.1mA from a 1.2V supply, the VCO has -120dBc/Hz phase noise at 1MHz offset from the carrier of the 5.3 GHz.