• Title/Summary/Keyword: gate array

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Fabrication & Properties of Field Emitter Arrays using the Mold Method for FED Application (Mold 법에 의해 제작된 FED용 전계에미터어레이의 특성 분석)

  • ;;;;K. Oura
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.347-350
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    • 2001
  • A typical Mold method is to form a gate electrode, a gate oxide, and emitter tip after fabrication of mold shape using wet-etching of Si substrate. In this study, however, new Mold method using a side wall space structure is used in order to make sharper emitter tip with a gate electrode. Using LPCVD(low pressure chemical vapor deposition), a gate oxide and electrode layer are formed on a Si substrate, and then BPSG(Boro phospher silicate glass) thin film is deposited. After, the BPSG thin film is flowed into a mold as high temperature in order to form a sharp mold structure. Next TiN thin film is deposited as a emitter tip substance. The unfinished device with a glass substrate is bonded by anodic bonding techniques to transfer the emitters to a glass substrate, and Si substrate is etched using KOH-deionized water solution. Finally, we made sharp field emitter array with gate electrode on the glass substrate.

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Process Variation on Arch-structured Gate Stacked Array 3-D NAND Flash Memory

  • Baek, Myung-Hyun;Kim, Do-Bin;Kim, Seunghyun;Lee, Sang-Ho;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.2
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    • pp.260-264
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    • 2017
  • Process variation effect on arch-structured gate stacked array (GSTAR) 3-D NAND flash is investigated. In case of arch-structured GSTAR, a shape of the arch channel is depending on an alignment of photo-lithography. Channel width fluctuates according to the channel hole alignment. When a shape of channel exceeds semicircle, channel width becomes longer, increasing drain current. However, electric field concentration on tunnel oxide decreases because less electric flux converges into a larger surface of tunnel oxide. Therefore, program efficiency is dependent on the process variation. Meanwhile, a radius of channel holes near the bottom side become smaller due to an etch slope. It also affects program efficiency as well as channel width. Larger hole radius has an advantage of higher drain current, but causes degradation of program speed.

Design of Interface Module for Driving of Image Processing Using FPGA (FPGA를 이용한 영상처리 구동을 위한 정합모듈 설계)

  • Jung, Sung-Hyuck;Kim, Jung-Tae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.9
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    • pp.2071-2077
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    • 2010
  • Interface modules design between image sensor and external components are designed by FPGA (Field Programmable Gate Array) in this paper. Generally speaking, to satisfy synchronization for the poor quality data in image, SRAM is needed. To receive synchronization signal and image signal data with pixel dimension, the proposed interface logic technique is implemented. From the proposed technique, we can obtain more clear screen by implementing with pixel dimension. Operating frequency of image sensor and that of TFT-LCD are 50MHz and 6.5MHz, respectively. Most of control logic functions are embedded in FPGA. The designed logic gate counter has 33,216 and is designed by Quartus II.

Design and Implementation of an FPGA-based Real-time Simulator for a Dual Three-Phase Induction Motor Drive

  • Gregor, Raul;Valenzano, Guido;Rodas, Jorge;Rodriguez-Pineiro, Jose;Gregor, Derlis
    • Journal of Power Electronics
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    • v.16 no.2
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    • pp.553-563
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    • 2016
  • This paper presents a digital hardware implementation of a real-time simulator for a multiphase drive using a field-programmable gate array (FPGA) device. The simulator was developed with a modular and hierarchical design using very high-speed integrated circuit hardware description language (VHDL). Hence, this simulator is flexible and portable. A state-space representation model suitable for FPGA implementations was proposed for a dual three-phase induction machine (DTPIM). The simulator also models a two-level 12-pulse insulated-gate bipolar transistor (IGBT)-based voltage-source converter (VSC), a pulse-width modulation scheme, and a measurement system. Real-time simulation outputs (stator currents and rotor speed) were validated under steady-state and transient conditions using as reference an experimental test bench based on a DTPIM with 15 kW-rated power. The accuracy of the proposed digital hardware implementation was evaluated according to the simulation and experimental results. Finally, statistical performance parameters were provided to analyze the efficiency of the proposed DTPIM hardware implementation method.

Development of a General Purpose PID Motion Controller Using a Field Programmable Gate Array

  • Kim, Sung-Su;Jung, Seul
    • 제어로봇시스템학회:학술대회논문집
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    • 2003.10a
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    • pp.360-365
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    • 2003
  • In this paper, we have developed a general purpose motion controller using an FPGA(Field Programmable Gate Array). The multi-PID controllers on a single chip are implemented as a system-on-chip for multi-axis motion control. We also develop a PC GUI for an efficient interface control. Comparing with the commercial motion controller LM 629 it has multi-independent PID controllers so that it has several advantages such as space effectiveness, low cost and lower power consumption. In order to test the performance of the proposed controller, robot finger is controlled. The robot finger has three fingers with 2 joints each. Finger movements show that position tracking was very effective. Another experiment of balancing an inverted pendulum on a cart has been conducted to show the generality of the proposed FPGA PID controller. The controller has well maintained the balance of the pendulum.

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The Characteristics and Technical Trends of Power MOSFET (전력용 MOSFET의 특성 및 기술동향)

  • Bae, Jin-Yong;Kim, Yong
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.7
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    • pp.1363-1374
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    • 2009
  • This paper reviews the characteristics and technical trends in Power MOSFET technology that are leading to improvements in power loss for power electronic system. The silicon bipolar power transistor has been displaced by silicon power MOSFET's in low and high voltage system. The power electronic technology requires the marriage of power device technology with MOS-gated device and bipolar analog circuits. The technology challenges involved in combining power handling capability with finger gate, trench array, super junction structure, and SiC transistor are described, together with examples of solutions for telecommunications, motor control, and switch mode power supplies.

FPGA Implementation of LSB-Based Steganography

  • Vinh, Quang Do;Koo, Insoo
    • Journal of information and communication convergence engineering
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    • v.15 no.3
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    • pp.151-159
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    • 2017
  • Steganography, which is popular as an image processing technology, is the art of using digital images to hide a secret message in such a way that its existence can only be discovered by the sender and the intended receiver. This technique has the advantage of concealing secret information in a cover medium without drawing attention to it, unlike cryptography, which tries to convert data into something messy or meaningless. In this paper, we propose two efficient least significant bit (LSB)-based steganography techniques for designing an image-based steganography system on chip using hardware description language (HDL). The proposed techniques manipulate the LSB plane of the cover image to embed text inside it. The output of these algorithms is a stego-image which has the same quality as that of the original image. We also implement the proposed techniques using the Altera field programmable gate array (FPGA) and Quartus II design software.

Microcode-based Output Pulse Generation for Remote Controller Application (원격조종장치를 위한 마이크로코드방식의 출력펄스발생회로)

  • 장현수;조경록;유영갑
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.18 no.10
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    • pp.1527-1536
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    • 1993
  • A new transmitter circuit for remote controllers is designed to provide flexibility and expandibility in function. The circuit employs a microcode approach to accept various code format, length and pulse widths through programming, and the precessing logics is eliminated to reduce its size. The circuit was Implemented using FPGA(Field Programmable Gate Array) and it was found to operate successfully).

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Development and Application of TFT-LCD Pixel Design Tool (PDAST) (TFT-LCD 화소 설계 도구(PDAST)의 개발과 응용)

  • Lee, Yeong-Sam;Gwak, Ji-Hun;Choe, Jong-Seon
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.6
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    • pp.416-428
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    • 1999
  • A user-interactive pixel design tool for high-quality TFT-LCDs is realized and used to explore the sensitivity of the various array and device parameters for optimizing pixel design. In this tool, the Thompson cable equation and gradual-channel approximation were used for the gate time delay and TFT current modeling respectively. With this tool, each capacitance element, and TFT and array dimensions can be optimized under given design specifications. The electrical characteristics such ascharging ratio, gate time delay, pixel voltage level-shift, and holding ratio can be analyzed. The sensitivity analysis of those design parameters were executed and presented.

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A New Field Programmable Gate Array: Architecture and Implementation

  • Cho, Han-Jin;Bae, Young-Hwan;Eum, Nak-Woong;Park, In-Hag
    • ETRI Journal
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    • v.17 no.2
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    • pp.21-30
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    • 1995
  • A new architecture of field programmable gate array for high-speed datapath applications is presented. Its implementation is facilitated by a configurable interconnect technology based on a one-time, two-terminal programmable, very low-impedance anti-fuse and by a configurable logic module optimized for datapath applications. The configurable logic module can effectively implement diverse logic functions including sequential elements such as latches and flip-flops, and arithmetic functions such as one-bit full adder and two-bit comparator. A novel programming architecture is designed for supplying large current through the anti-fuse element, which drops the on-resistance of anti-fuse below $20{\Omega}$. The chip has been fabricated using a $0.8-{\mu}m$ n-well complementary metal oxide semiconductor technology with two layers of metalization.

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