• Title/Summary/Keyword: gas sensing response

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Hydrogen sulfide gas sensing mechanism study of ZnO nanostructure and improvement of sensing property by surface modification

  • Kim, Jae-Hyeon;Yong, Gi-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.450-450
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    • 2011
  • This study reports the hydrogen sulfide gas sensing properties of ZnO nanorods bundle and the investigation of gas sensing mechanism. Also the improvement of sensing properties was also studied through the application of ZnO heterstructured nanorods. The 1-Dimensional ZnO nano-structure was synthesized by hydrothermal method and ZnO nano-heterostructures were prepared by sonochemical reaction. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) spectra confirmed a well-crystalline ZnO of hexagonal structure. The gas response of ZnO nanorods bundle sensor increased with increasing temperature, which is thought to be due to chemical reaction of nanorods with gas molecules. Through analysis of X-ray photoelectron spectroscopy (XPS), the sensing mechanism of ZnO nanorods bundle sensor was explained by well-known surface reaction between ZnO surface atoms and hydrogen sulfide. However at high sensing temperature, chemical conversion of ZnO nanorods becomes a dominant sensing mechanism in current system. In order to improve the gas sensing properties, simple type of gas sensor was fabricated with ZnO nano-heterostructures, which were prepared by deposition of CuO, Au on the ZnO nanorods bundle. These heteronanostructures show higher gas response and higher current level than ZnO nanorods bundle. The gas sensing mechanism of the heteronanostructure can be explained by the chemical conversion of sensing material through the reaction with target gas.

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Fabrication of CuO/ZnO Nano-heterostructure by Photochemical Method and Their H2S Gas Sensing Properties

  • Kim, Jae-Hyun;Yong, Ki-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.359-359
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    • 2011
  • This study reports the H2S gas sensing properties of CuO / ZnO nano-hetero structure bundle and the investigation of gas sensing mechanism. The 1-Dimensional ZnO nano-structure was synthesized by hydrothermal method and CuO / ZnO nano-heterostructures were prepared by photo chemical reaction. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) spectra confirmed a well-crystalline ZnO of hexagonal structure. In order to improve the H2S gas sensing properties, simple type of gas sensor was fabricated with ZnO nano-heterostructures, which were prepared by photo-chemical deposition of CuO on the ZnO nanorods bundle. The furnace type gas sensing system was used to characterize sensing properties with diluted H2S gas (50 ppm) balanced air at various operating temperature up to 500$^{\circ}C$. The H2S gas response of ZnO nanorods bundle sensor increased with increasing temperature, which is thought to be due to chemical reaction of nanorods with gas molecules. Through analysis of X-ray photoelectron spectroscopy (XPS), the sensing mechanism of ZnO nanorods bundle sensor was explained by well-known surface reaction between ZnO surface atoms and hydrogen sulfide. However at high sensing temperature, chemical conversion of ZnO nanorods becomes a dominant sensing mechanism in current system. Photo-chemically fabricated CuO/ZnO heteronanostructures show higher gas response and higher current level than ZnO nanorods bundle. The gas sensing mechanism of the heteronanostructure can be explained by the chemical conversion of sensing material through the reaction with H2S gas.

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NO2 Sensing Characteristics of Si MOSFET Gas Sensor Based on Thickness of WO3 Sensing Layer

  • Jeong, Yujeong;Hong, Seongbin;Jung, Gyuweon;Jang, Dongkyu;Shin, Wonjun;Park, Jinwoo;Han, Seung-Ik;Seo, Hyungtak;Lee, Jong-Ho
    • Journal of Sensor Science and Technology
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    • v.29 no.1
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    • pp.14-18
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    • 2020
  • This study investigates the nitrogen dioxide (NO2) sensing characteristics of an Si MOSFET gas sensor with a tungsten trioxide (WO3) sensing layer deposited using the sputtering method. The Si MOSFET gas sensor consists of a horizontal floating gate (FG) interdigitated with a control gate (CG). The WO3 sensing layer is deposited on the interdigitated CG-FG of a field effect transistor(FET)-type gas sensor platform. The sensing layer is deposited with different thicknesses of the film ranging from 100 nm to 1 ㎛ by changing the deposition times during the sputtering process. The sensing characteristics of the fabricated gas sensor are measured at different NO2 concentrations and operating temperatures. The response of the gas sensor increases as the NO2 concentration and operating temperature increase. However, the gas sensor has an optimal performance at 180℃ considering both response and recovery speed. The response of the gas sensor increases significantly from 24% to 138% as the thickness of the sensing layer increases from 100 nm to 1 ㎛. The sputtered WO3 film consists of a dense part and a porous part. As reported in previous work, the area of the porous part of the film increases as the thickness of the film increases. This increased porous part promotes the reaction of the sensing layer with the NO2 gas. Consequently, the response of the gas sensor increases as the thickness of the sputtered WO3 film increases.

Improvement of Sensing Performance on Nasicon Amperometric NO2 Sensors (나시콘 전류검출형 NO2 센서의 성능개선)

  • Kim, Gwi-Yeol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.10
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    • pp.912-917
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    • 2007
  • Many electrochemical power devices such as solid state batteries and solid oxide fuel cell have been studied and developed for solving energy and environmental problems. An amperometric gas sensor usually generates sensing signal of electric current along the proportion of the concentration of target gas under the condition of limiting current. For narrow variations of gas concentration, the amperometric gas sensor can show higher precision than a potentiometric gas sensor does. In additional, cross sensitivities to interfering gases can possibly be mitigated by choosing applied voltage and electrode materials properly. In order to improve the sensitivity to $NO_2$, the device was attached with Au reference electrode to form the amperometric gas sensor device with three electrodes. With the fixed bias voltage being applied between the sensing and counter electrodes, the current between the sensing and reference electrodes was measured as a sensing signal. The response to $NO_2$ gas was obviously enhanced and suppressed with a positive bias, respectively, while the reverse current occurred with a negative bias. The way to enhance the sensitivity of $NO_2$ gas sensor was thus realized. It was shown that the response to $NO_2$ gas could be enhanced sensitivity by changing the bias voltage.

Enhancing Gas Response Characteristics of Mixed Metal Oxide Gas Sensors

  • Balamurugan, Chandran;Song, Sun-Ju;Kim, Ho-Sung
    • Journal of the Korean Ceramic Society
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    • v.55 no.1
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    • pp.1-20
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    • 2018
  • Semiconducting nanomaterials have attracted considerable interest in recent years due to their high sensitivity, selectivity, and fast response time. In addition, for portable applications, they have low power consumption, lightweight, simple in operation, a low maintenance cost. Furthermore, it is easy to manufacture microelectronic sensor structures with metallic oxide sensitive thin layers. The use of semiconducting metal oxides to develop highly sensitive chemiresistive sensing systems remains an important scientific challenge in the field of gas sensing. According to the sensing mechanisms of gas sensors, the overall sensor conductance is determined by surface reactions and the charge transfer processes between the adsorbed species and the sensing material. The primary goal of the present study is to explore the possibility of using semiconducting mixed metal oxide nanostructure as a potential sensor material for selective gases.

Recent Advances and Trends in Filters for Highly Selective Metal Oxide Gas Sensors (산화물 반도체형 가스센서의 선택성 향상을 위한 필터 연구 동향 및 전략)

  • Seong-Yong Jeong
    • Journal of Sensor Science and Technology
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    • v.33 no.1
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    • pp.48-55
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    • 2024
  • Metal-oxide-based semiconductor gas sensors are widely used because of their advantages, such as high response and simple sensing mechanism. Recently, with the rapid progress in sensor networks, computing power, and microsystem technology, sensor applications are expanding to various fields, such as food quality control, environmental monitoring, healthcare, and artificial olfaction. Therefore, the development of highly selective gas sensors is crucial for practical applications. This article reviews the developments in novel sensor design consisting of sensing films and physical and chemical filters for highly selective gas sensing. Unlike conventional sensors, the sensor structures with filters can separate the sensing and catalytic reactions into independent processes, enabling selective and sensitive gas sensing. The main objectives of this study are directed at introducing the role of various filters in gas-sensing reactions and promising sensor applications. The highly selective gas sensors combined with a functional filter can open new pathways toward the advancement of high-performance gas sensors and electronic noses.

Studies on the Sensing Charcteristics of Carbon-monoxide Using the Maghemite (Maghemite를 이용한 일산화탄소 감지 특성에 관한 연구)

  • 박영구
    • Journal of Environmental Health Sciences
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    • v.21 no.4
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    • pp.24-31
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    • 1995
  • Gas sensing element, $\alpha-Fe_2O_3$ was synthesized by dehydration, reduction, and oxidation of $\alpha-FeOOH$, which was synthesized with $FeSO_4\cdot 7H_2O$ and NaOH. They were produced as a bulk-type, a thick film-type. Then, their responses and mechanisms of response to the gas of carbon monoxide were studied. The qualities of gas sefising elements are decided by the structure and the relative surface area. In the process of $\alpha-FeOOH$ synthesis, the effects of reaction conditions as the equivalent ratio, on the structure and the relative surface area of gas sensing element were observed. The changes of the structure were measured with XRD, SEM,TG-DTA and BET. The resistance changes of the synthesized gas sensor in the air were measured. The response ratio were also measured for the changes of working temperature and gas concentration. As a result of analysis with XRD, it was confirmed that the the best conditions for the synthesis of $\alpha-FeOOH$ were equivalent ratio 0.65. The thick film-type element of $\gamma-Fe_2O_3$ responded more quickly than the bulk-type did. The structure and the relative surface area of the $\rho-FeOOH$ were confirmed as the important factors deciding gas response charcteristics.

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The highly sensitive NO2 gas sensor using ZnO nanorods grown by the sol-gel method (졸-겔법으로 증착된 ZnO 나노막대를 이용한 고감도 이산화질소 가스 센서 제작 및 특성 연구)

  • Park, S.J.;Kwak, J.H.;Park, J.;Lee, H.Y.;Moon, S.E.;Park, K.H.;Kim, J.;Kim, G.T.
    • Journal of Sensor Science and Technology
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    • v.17 no.2
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    • pp.147-150
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    • 2008
  • Multiple ZnO nanorod device detecting $NO_2$ gas was fabricated by sol-gel growth method and gas response characteristics were measured as a chemical gas sensor. The device is mainly composed of sensing electrode and sensing nano material. To acquire high sensitivity of the device for $NO_2$ gas it was heated by a heat chuck up to $400^{\circ}C$ The sensing part was easily made using the CMOS compatible process, for example, the large area and low temperature nano material growth process, etc. The sensors were successfully demonstrated and showed high sensitive response for $NO_2$ gas sensing.

The Analysis of Organic Gas Response Characteristic for Polymer Coating Materials (감응성막의 유기가스 응답특성 분석)

  • Kim, J.M.;Kwon, Y.S.;You, S.Y.;Choi, Y.S.
    • Proceedings of the KIEE Conference
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    • 1995.11a
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    • pp.417-419
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    • 1995
  • Polymer-coated piezoelectric crystals were applied to analyze response characteristic of organic gases. AT-cut quartz crystal with 9 MHz resonant frequency can measure mass of 1 nanogram. Flow type gas-sensing system was used in this experiment. Flow type gas-sensing system has very simple apparatus and shows very fast frequency response for injection of organic gas. We have made parameter using relaxation ratio of frequency response for organic gas. Consequently, we found that the parameter had no relation with quantity of gas injection and dipping.

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Gas Sensing Characteristics of Ru doped-WO3 Micro Gas Sensors (루테늄이 첨가된 텅스텐 산화물을 이용한 마이크로 가스 센서의 암모니아 가스 감지 특성)

  • Lee, Hoi Jung;Yoon, Jin Ho;Kim, Bum Joon;Jang, Hyun Duck;Kim, Jung Sik
    • Korean Journal of Metals and Materials
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    • v.49 no.5
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    • pp.395-399
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    • 2011
  • In this study, micro gas sensors for ammonia gas were prepared by adopting MEMS technology and using a sol-gel process. Three types of sensors were prepared via different synthesis routes starting with W sol and Ru sol mixture. This mixture was deposited on a MEMS platform and the platform was subsegueny heated to a temperature of $350^{\circ}C$. The topography and crystal structure of the sensing film were studied using FE-SEM and XRD. The response of the gas sensor to $NH_3$ gas was examined at various operating temperatures and gas concentrations. The sensor response increased almost linearly with gas concentration and the best sensing response was obtained at $333^{\circ}C$ for 5.0 ppm $NH_3$ for the specimen prepared by coating $WO_3$ powders with the Ru sol mixture.