• Title/Summary/Keyword: gas laser

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Nd:YAG Laser Cladding of Inconel with Wire Feeding (와이어 공급에 의한 Inconel의 Nd:YAG 레이저 클래딩)

  • Kim, Jae-Do;Bae, Min-Jong;Peng, Yun
    • Journal of Welding and Joining
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    • v.18 no.3
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    • pp.83-88
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    • 2000
  • Laser cladding processing allows rapid transfer of heat to the material being processed with minimum conduction into base metal, resulting in low total heat input. The effects of Nd:YAG laser cladding with wire feeding on the mechanical properties of Inconel alloy were investigated. inconel alloy is used as the material of nuclear steam generator tubing because of its mechanical properties and corrosion resistance properties. The device for Nd:YAG laser cladding with wire feeding was designed. It consists of the wire feeding system, the wire cladding system and the shielding gas system which prevents the clad layer from being oxidized. Experimental as results indicated that the wire feeding direction and position were important for laser cladding with wire feeding. The wire feeding speed should be adapted according to cladding speed for good shaping of clad layer. The effect of heat on the HAZ size can be limited and the growth of grain size of HAZ size was not serious. The hardness of clad layer and heat affected zone increased with increasing of cladding speed.

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Study on the characteristics of the plasma induced by lap-joint $CO_2$ laser welding of automotive steel sheets (자동차용 강판의 겹치기 $CO_2$ 레이저 용접에서 발생되는 플라즈마 특성에 관한 연구)

  • 남기중;박기영;이경돈
    • Laser Solutions
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    • v.5 no.1
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    • pp.33-42
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    • 2002
  • In order to investigate the characteristics of the plasma induced by lap-joint CO$_2$ laser welding of automotive steel sheets, the effects of welding speed, shield gas flow rate, gap size, and laser beam defocus to plasma intensity emitted from keyhole have been investigated. The plasma light is measured by fiber and photodiode. Also, the plasma images were captured by the high speed digital camera in 1000frames/sec in order to correlate the plasma light signal with plasma pattern. From the results, it is observed that the difference of the plasma intensity for between the deep penetration and partial penetration exists from 1.2 to 2 times. The plasma light intensity decreased in case of the deep penetration Is observed due to the exhausting of the plasma gas under the sheet. On the other hand, under the conditions of the deep penetration, the plasma intensity is significantly increased by controling the conditions decreasing the penetration depth. It was specially founded that the effect of 0.3mm gap size at partial penetration condition is approximately similar to deep penetration in 0mm gap. It is concluded that the plasma intensity is able to evaluate the penetration depth in lap-joint welding and appears to offer the most straightforward correlation to the welding process.

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Growth and characterization of amorphous GaN film using a pulsed-laser ablation (펄스 레이저 어블레이션을 이용한 비정질 GaN박막의 성장 및 특성분석)

  • ;;Naoto Koshizaki
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.1
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    • pp.33-36
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    • 2004
  • Amorphous GaN film was deposited using a laser ablation of the highly densified GaN target. Through the surface morphological and compositional analysis of films deposited under various laser energies and Ar gas pressures, the film deposited under the pressure of 10 Pa were found to be amorphous GaN with the smooth surface. In particular, the film at 200 mJ/pulse showed the enhanced crystallinity and stoichiometric composition, compared with those of the films at relatively lower laser energy. The strong band-gap emission at 2.8 eV was observed from amorphous GaN film in the room temperature photoluminescence spectra, showing the highest efficiency in the film at 200 mJ/pulse under 10 Pa.

The Concentration Measurements of Toxic Exhaust Gas by Tunable Diode Laser Absorption Spectroscopy System (TDLAS 시스템을 이용한 유해 배기가스의 농도 계측)

  • Cha, Hak-Joo;Kim, Min-Soo;Shin, Myung-Chul;Kim, Se-Won;Chun, Kwang-Min
    • Proceedings of the KSME Conference
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    • 2003.11a
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    • pp.222-227
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    • 2003
  • Recent advances in room-temperature, visible and near-IR diode laser sources for telecommunication, optical data storage applications are enabling combustion diagnostics system based on diode laser absorption spectroscopy. In contrast to some traditional sampling-based gas-sensing instruments, tunable diode laser absorption spectroscopy system is advantageous because of their non-invasive nature, high sensitivity, fast response time and real-time measurement capability. So, combined with fiber-optics and high sensitive detection strategies, compact and portable sensor system arc now appearing for a variety of applications. The objective of this research is to take advantage of distributed feed-back diode laser and measure the $CO_{2}$ concentration (by using direct absorption and wavelength modulation spectroscopy methods). In addition to survey spectra of $CO_{2}$ bands and spectroscopic parameters between 1565 and 1579 run were computed at temperatures between 296 and 1200 K (by using HITRAN 2000 database). It experimentally found out that the features of direct absorption and wavelength modulation spectroscopy methods.

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Influence of Cutting Pressure on Laser Cut Quality (Relationship between Cutting Pressure and Cut Quality) (레이저 절단품질에 미치는 절단압력의 영향(2) (절단압력과 절단품질간의 상관관계))

  • Yang, Yeong-Su;Na, Seok-Ju;Kim, Won-Bae;Kim, Tae-Gyun
    • Journal of the Korean Society for Precision Engineering
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    • v.5 no.1
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    • pp.63-70
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    • 1988
  • Laser cutting system uses a gas jet to remove the molten or varpozed material from the workpiece. The quality of the laser cut can be strongly influenced by the gas flow charac- teristics formed through the nozzle. Laser cutting experiments were carried out for SS41 and SUS 304 to investigate the relationship between cut quality and cutting pressure. The cutting speed, nozzle pressure and nozzle to workpiece distance were also considered. The cut specimens were inspected by various manners such as dross observation, surface roughness test and kerf width measurement. Based on the data of pressure measurement on workpiece and the results of cut surface inspection, the influence of the considered cutting conditions on cut quality could be evaluated. The results of this study will be valuable in planning the optimal laser cutting process and in designing the laser cutting nozzle.

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Effect of deposition pressure on the morphology of TiO2 nanoparticles deposited on Al2O3 powders by pulsed laser deposition (펄스레이저 증착법에 의한 Al2O3 입자 표면 위 TiO2 나노입자의 코팅)

  • Choi, Bong Geun;Kim, So Yeon;Park, Cheol Woo;Park, Jae Hwa;Hong, Yoon Pyo;Shim, Kwang Bo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.23 no.4
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    • pp.167-172
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    • 2013
  • Titanium dioxides nanoparticles coated aluminum oxide powders were fabricated by pulsed laser deposition (PLD) with Nd : YAG laser at 266 nm. The Pulse laser energy is 100 mJ/pulse. During the irradiation of the focused laser on the $TiO_2$ target, Ar gas is supplied into the chamber. The gas pressure is varied in a range of $1{\times}10^{-2}$ to 100 Pa. Titanium dioxides nanoparticles deposited aluminum oxide powders were characterized by using energy dispersive X-ray spectroscopy (EDX), high resolution transmission electron microscopy (HR-TEM), in order to understand the effect of Ar background gas on surface morphology and properties of the powders. The coated $TiO_2$ nanoparticles had nanosized spherical shape and the crystallite sizes of 10~30 nm. The morphology of coated $TiO_2$ nanoparticles is not affected by gas pressure. However, the particle size and crystallinity slightly increased with the increase of gas pressure. According to this technique, the size and crystallinity of nanoparticles can be easily controlled by controlling pressure during the laser irradiation.

The Study on Wafer Cleaning Using Excimer Laser (엑사이머 레이저를 이용한 웨이퍼 크리닝에 관한 고찰)

  • 윤경구;김재구;이성국;최두선;신보성;황경현;정재경
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2000.05a
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    • pp.743-746
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    • 2000
  • The removal of contaminants of silicon wafers has been investigated by various methods. Laser cleaning is the new dry cleaning technique to replace wafer wet cleaning in the near future. A dry laser cleaning uses inert gas jet to remove contaminant particles lifted off by the action of a KrF excimer laser. A laser cleaning model is developed to simulate the cleaning process and analyze the influence of contaminant particles and experimental parameters on laser cleaning efficiency. The model demonstrates that various types of submicrometer-sized particles from the front sides of silicon wafer can be efficiently removed by laser cleaning. The laser cleaning is explained by a particle adhesion model. including van der Waals forces and hydrogen bonding, and a particle removal model involving rapid thermal expansion of the substrate due to the thermoelastic effect. In addition, the experiment of wafer laser cleaning using KrF excimer laser was conducted to remove various contaminant particles.

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Design and evalution of pulsed $CO_2$ laser system using high repetition ratio and high precision (고반복율 및 고정밀방식을 이용한 펄스형 $CO_2$ Laser 시스템 설계 및 평가)

  • 김흥수;김휘영
    • Journal of the Korea Computer Industry Society
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    • v.2 no.8
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    • pp.1055-1062
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    • 2001
  • Study, it is the purpose to develope a cheap and compact pulsed $CO_2$ laser with pulse repetition rate range of 1 KHz. We used a IGBT switched power supply as a power supply, which is cheap and simple comparing to others. PIC one-chip microprocessor was used for precise control of a laser power supply on the control part. And the laser cavity was fabricated as an axial and water cooled type. The laser performance characteristics as various parameters, such as pulse repetition rate, gas pressure, and gas mixture rate have been investigated. The experiment was done under the condition of total pressure of $CO_2$$N_2$:He = 1:3:10, 1:1.5:5, 1:9:15 from 6 Torr to 15 Torr and pulse repetition rate from 100 Hz to 900 Hz. As a result, the maximum average outpu was about 20.5 W at the total pressure of 15 Torr, the gas mixture $CO_2$$N_2$:He = 1:9:15 and the pulse repetition rate of 700 Hz.

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Synthesis and characterization of GaN nanoparticles by pulsed laser deposition (펄스레이저증착법에 의한 GaN 나노입자의 합성 및 특성분석)

  • ;;;Koshizaki Naoto
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.13 no.2
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    • pp.79-82
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    • 2003
  • GaN nanoparticles were synthesized by the pulsed laser deposition (PLD) process on $SiO_2$substrate after irradiating the surface of the GaN sintered pellet by the ArF (193 nm) excimer laser. At this moment Ar gas pressure of 100 Pa, 50 Pa, 10 Pa and 1 Pa were applied during the ablation process and laser power of 100 mJ and 200 mJ were also applied. The synthesized fan nanoparticles were characterized by XRD, SEM, TEM, XPS and optical absorption spectra. The synthesized GaN nanoparticles had the crystallite sizes of 20~30 nm, and besides, GaN nanoparticles synthesized under low Ar gas pressure compared to the others corresponded with stoichiometry, and the optical band edge of the GaN nanoparticles was blueshifted.

Output Characteristics of XeF$(C\rightarrowA$ Laser for the variation of Xe concentration under the pressures of broad region (넓은 범위의 압력에서 Xe 농도 변화에 대한 XeF$(C\rightarrowA$ 레이저의 출력특성)

  • 류한용;이주희
    • Korean Journal of Optics and Photonics
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    • v.6 no.3
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    • pp.214-221
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    • 1995
  • When the broad pressure region (0.5-3.5 atm) of laser media is pumped by 70 ns [FWHM] electronbeam accelerator (800 kV, 21 kA), the correlation between free-runnuing XeF$(C\rightarrowA$ excimer laser output and Xe concentration are studied. The resonator consisted of dichroic output coupler, and the laser output is optimized with laser media $(Xe/F_2/Ar)$ as functions of total pressure and gas mixing ratio. Under the condition of F2 0.46% fixed, the laser intrinsic efficiencies of 0.38%, 1.03%, and 0.29% are obtained at 1. 2, and 3 atm, respectively. So then the peaks of laser intrinsic efficiency occured to the higher Xe concentration with decreasing total gas pressure. By analyzing the kinetics for the $XeF^*(C)$ formation efficiency and XeF$(C\rightarrowA$ laser extraction efficiency the dependence of Xe concentration on their correlation is explained. As the results we propose efficient operation of an atmosphericpressure XeF$(C\rightarrowA$ laser. laser.

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