• Journal of Electrochemical Science and Technology
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• 제4권1호
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• pp.1-18
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• 2013

Gallium is an important element in the production of a variety of compound semiconductors for optoelectronic devices. Gallium has a low melting point and is easily oxidized to give oxides of different compositions that depend on the conditions of solutions containing Ga. Gallium electrode reaction is highly irreversible in acidic media at the dropping mercury electrode. The passive film on a gallium surface is formed during anodic oxidation of gallium metal in alkaline media. Besides, some results in published reports have not been consistent and reproducible. An increase in the demand of intermetallic compounds and semiconductors containing gallium gives rise to studies on electrosynthesis of them and an increase of gallium concentration in the environment with various application of gallium causes the development of electroanalysis tools of Ga. It is required to understand the electrochemistry of Ga and to predict the electrochemical behavior of Ga to meet these needs. Any review papers related to the electrochemistry of gallium have not been published since 1978, when the review on the subject was published by Popova et al. In this study, the redox behavior, anodic oxidation, and electrodeposition of gallium, and trace determination of gallium by stripping voltammetries will be reviewed.

• 자원리싸이클링
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• 제23권6호
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• pp.63-67
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• 2014

갈륨은 주로 산화물 반도체용 타겟이나 LED 칩을 만드는 중요한 소재로 사용하고 있는데 아직까지 폐기물로부터 재자원화에 의한 순환량이 매우 낮다. 이로 인해 갈륨을 함유하고 있는 대부분의 폐자원은 해외로 유출되고 원재료는 수입에 의존하고 있다. 따라서 희유금속인 갈륨을 함유하고 있는 저품위 갈륨으로부터 갈륨을 회수하여 고순도화하는 방법을 연구 하였다. 전처리 과정으로 스크랩을 미분쇄하여 산으로 침출하였다. 침출액내 인듐은 치환으로 석출시켜 분리한 후 알칼리를 사용하여 갈륨과 아연을 수산화물로 침전시켜 여과 분리하였다. 갈륨과 아연수산화물을 알칼리용액으로 침출시켜 전해액을 제조하였고 전해채취로 갈륨과 아연메탈을 회수하였다. 갈륨과 아연은 진공정제를 통하여 아연을 제거하고 고순도의 갈륨을 회수하였다.

• 한국세라믹학회지
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• 제40권11호
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• pp.1058-1061
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• 2003

Gallium Nitride (GaN) powders were synthesized by calcining a gallium(III) sulfate salt in flowing ammonia in the temperature range 500-1100$^{\circ}C$. The process of conversion of the salt to GaN was monitored by X-Ray Diffraction (XRD). The salt decomposed to ${\gamma}$-Ga$_2$O$_3$ and then converted to GaN without ${\gamma}$-${\beta}$Ga$_2$O$_3$ phase transition. Variations in XRD patterns and weight loss of samples with temperature indicate that the conversion of ${\gamma}$-Ga$_2$O$_3$ to GaN does not proceed through Ga$_2$O but stepwise via amorphous gallium oxynitride (GaO$\_$x/N$\_$y/) as intermediates. Room-temperature photoluminescence spectra of GaN powders obtained showed the emission peak at 363 nm and no yellow band.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2002년도 추계학술대회 논문집
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• pp.351-354
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• 2002

The new enhanced method of temperature control need not any reference temperature, the system itself can find the melting temperature of gallium as a reference point by dithering input heat flux. If gallium is in melting state, the latent heat of fusion works, so gallium temperature does not change on dithering input heat flux. Also, the control method can determine the state of gallium; solid, liquid, or melting state by investigating the temperature in gallium. We apply this new temperature stabilization method to stabilize a Fabry-Perot cavity, which serves as a ultimate length measurement technique. We achieved 1 mK-temperature stability and 1.5426 nm/ 95 mm-length stability over 10 hours.

• Current Applied Physics
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• 제18권12호
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• pp.1553-1557
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• 2018

Gallium nitride (GaN) nanoparticles are synthesized by the gallium particle trapping effect in a $N_2$ nonthermal plasma with metallic Ga vapor. A proposed method has an advantage of synthesized GaN nanoparticle purity because the gallium vapor from the inductively heated tungsten boat does not contain any impurity source. The synthesized particle size can be controlled by the amount of Ga vapor, which is adjusted using the plasma emission ratio of nitrogen to gallium, owing to the particle trapping effect. The synthesized nanoparticles are investigated by electron microscopy studies. High-resolution transmission electron microscopy (HRTEM) studies confirm that the synthesized GaN nanoparticles (10-40 nm) crystallize in a single-phase wurtzite structure. Room-temperature photoluminescence (PL) measurements indicate the band-edge emission of GaN at around 378 nm without yellow emission, which implies that the synthesized GaN nanoparticles have high crystallinity.

• Bulletin of the Korean Chemical Society
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• 제27권8호
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• pp.1235-1238
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• 2006

• Radiation Oncology Journal
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• 제9권1호
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• pp.81-85
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• 1991

폐암의 방사선 치료후 발생하는 치료부위의 섬유성 변성과 암종의 재발의 구별이 어려울때가 많으나 아직 이렇다 할 감별진단 방법이 없다. 경북대학교 병원 치료방사선과에서 1989년 1월부터 1990년 6월까지 방사선 치료를 받은 폐암 환자 중 섬유성 변성이나 재발의 가능성이 높은 22명을 대상으로 Gallium-67 스캔의 유용성을 연구하였다. 대상환자는 편평 세포암 17명, 소세포암이 3명, 선암 2명이었고, 편평 세포암은 약물치료를 하지 않았고, 소세포암은 CAV와 Vp-16및 cis-platin으로 병용치료 하였으며, 선암은 폐엽절제술을 시행하였다. 방사선 치료는 조직형과 병용치료의 양상에 따라 5~6주에 걸쳐 45~60 Gy를 투여하였으며, 치료후 정기적으로추적 검진하였다. 재발과 상관 없이 방사선 폐염이 발생한군에서는 모두 Gallium 축적을 보였고, 12명의 재발 혹은 잔여 종양이 있는 군에서는 11명 이 Gallium 축적을 보였다(92%), 무병상태의 10명 중 방사선 폐염을 가진 5명에서는 Gallium축적이 있었으나, 섬유성 변성만 있는 5명에서는 4명에서 Gallium이 축적되지 않았다(80\%). 섬유성 변성은 모두 치료 종료 후 8개월 이후에 임상적으로 출현되었다. 이 시기에 재발과 섬유성 변성의 구별이 용이하지 않고 치료방침에도 결정적 영향을 미치므로, 치료 후 1년이 지난 환자에서 Gallium-67 scan이 임상적으로 유용할 것으로 사료된다.

• 구강회복응용과학지
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• 제19권4호
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• pp.309-315
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• 2003

When the exposure surface of restoration is brushed with various toothpaste in the mouth, wear or undesirable surface deposit of restoration can occur. Surface change of gallium alloys according to brushing and toothpaste may directly affect oral hygiene. The aim of this study was to evaluate the surface alterations of Gallium alloys during tooth brushing with different prophylactic agents. Two gallium-alloys and an amalgam as a control were investigated. Without and with brushing were applied with three kinds of prophylactic agents on the sample for 0, 1, 5, 10, 60 and 360 minutes. At each time interval, surface roughness was recorded by a profilometer and some pictures were taken by a SEM. All results were analyzed by the one-way ANOVA, followed by Tukey multiple comparisons and the simple linear regression analysis. The results indicate that gallium alloys are more susceptible to surface degradation during tooth brushing than amalgam with respect to the specific prophylactic agent used.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.293.2-293.2
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• 2016

The In this paper, we have fabricated the solution processed In-Ga-ZnO thin film transistors (IGZO TFTs) by varying indium and gallium ratio. The indium ratio of IGZO TFTs was changed from 1 to 5 at fixed gallium and zinc oxide atomic percent of 1:1 and gallium ratio was varied from 1 to 5 at fixed indium and zinc oxide atomic percent of 1:1. When the indium ratio was increased at fixed gallium and zinc oxide ratio of 1:1, threshold voltage was negatively shifted from 1.03 to -6.18 V and also mobility was increased from 0.018 to $0.076cm2/V{\cdot}sec$. It means that the number of carriers in IGZO TFTs were increased due to great formation of the oxygen vacancies which generate electrons. In contrast, when the gallium ratio was increased in IGZO TFTs with indium and zinc oxide ration of 1:1, the on/off current ratio was increased from $1.88{\times}104$ to $2.22{\times}105$. It is because gallium have stronger chemical bonds with oxygen than that with the zinc and indium ions that lead to the decreased in electron concentration.

• 대한기계학회논문집
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• 제16권1호
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• pp.87-94
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• 1992

본 연구에서는 실험적 해석을 통하여 액체-액체계의 직접접촉 막비등열전달 특성을 최소막비등지점과 막비등열유속의 측면에서 해석하고자 한다. 이는 직접접촉 비등에 대한 효율적인 열전달의 온도영역이나 주어진 액체-액체 계의 조합에 대한 증 기폭발의 발생가능성의 예측에 활용될 수 있을 것이다.