• Korean Journal of Crystallography
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• v.12 no.3
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• pp.127-136
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• 2001

A stoichiometric mixture of evaporating materials for ZnGa₂Se₄single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa₂Se₄mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 610℃ and 450℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa₂Se₄single crystal thin films measured from Hall effect by von der Pauw method are 9.63×10/sup 17/㎤ and 296 ㎠/V·s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa₂Se₄single crystal thin film, we have found that the values of spin orbit splitting △so and the crystal field splitting Δcr were 251.9meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on th ZnGa₂Se₄single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (A°, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.79-79
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• 2010

Semimetallic bismuth (Bi) has been extensively investigated over the last decade since it exhibits very intriguing transport properties due to their highly anisotropic Fermi surface, low carrier concentration, long carrier mean free path l, and small effective carrier mass $m^*$. In particular, the great interest in Bi nanowires lies in the development of nanowire fabrication methods and the opportunity for exploring novel low-dimensional phenomena as well as practical application such as thermoelectricity[1]. In this work, we introduce a self-assembled interconnection of nanostructures produced by an on-film formation of nanowires (OFF-ON) method in order to form a highly ohmic Bi nanobridge. A Bi thin film was first deposited on a thermally oxidized Si (100) substrate at a rate of $40\;{\AA}/s$ by radio frequency (RF) sputtering at 300 K. The sputter system was kept in an ultra high vacuum (UHV) of $10^{-6}$ Torr before deposition, and sputtering was performed under an Ar gas pressure of 2m Torr for 180s. For the lateral growth of Bi nanowires, we sputtered a thin Cr (or $SiO_2$) layer on top of the Bi film. The Bi thin films were subsequently put into a custom-made vacuum furnace for thermal annealing to grow Bi nanowires by the OFF-ON method. After thermal annealing, the Bi nanowires cannot be pushed out from the topside of the Bi films due to the Cr (or $SiO_2$) layer. Instead, Bi nanowires grow laterally as a mean s of releasing the compressive stress. We fabricated a self-assembled Bi nanobridge (d=192 nm) device in-situ using OFF-ON through annealing at $250^{\circ}C$ for 10hours. From I-V measurements taken on the Bi nanobridge device, contacts to the nanobridge were found highly ohmic. The quality of the Bi nanobridge was also proved by the high MR of 123% obtained from transverse MR measurements. These results manifest the possibility of self-assembled nanowire interconnection between various nanostructures for a variety of applications and provide a simple device fabrication method to investigate transport properties on nanowires without complex patterning and etching processes.

• Applied Chemistry for Engineering
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• v.3 no.1
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• pp.88-99
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• 1992

For the development of semiconducting photoelectrode to be more stable and efficient in the process of photoelectrolysis of the water, pure titanium rods were oxidized by anodic oxidation, furance oxidation and flame oxidation and used as electrodes. The Indium islands were formed by electrodeposition of "In" thin film on $TiO_2$ and Ti by electrodeposition. Also $A1_2O_3$ and NiO islands were coated on Ti by the electron-beam evaporation technique. The maximum photoelectrochemical conversion efficiency(${\eta}$) was 0.98% for flame oxidized electrode($1200^{\circ}C$ for 2min in air). Anodically oxidized electrodes have photoelectrochemical conversion efficiency of 0.14%. Furnace oxidized electrode($800^{\circ}C$ for 10min in air) has 0.57% of photoelectrochemical efficiency and shows a band-gap energy of about 2.9eV. The $In_2O_3$ coated $TiO_2$ exhibits 0.8% of photoelectrochemical efficiency but much higher value of ${\eta}$ was obtained with the Increase of applied blas voltage. However, $Al_2O_3$ or NiO coated $TiO_2$ shows much low value of ${\eta}$. The efficiency was dependent on the presence of the metallic interstitial compound $TiO_{0+x}$(x<0.33) at the metal-semiconductor interface and the thickness of the suboxide layer and the external rutile scale.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.157-167
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.

• Journal of Sensor Science and Technology
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• v.23 no.1
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• pp.51-57
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• 2014

The evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were $610^{\circ}C$ and $400^{\circ}C$, respectively.The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34\;eV-(8.81{\times}10^{-4}\;eV/K)T^2/(T+251\;K)$. After the as-grown $MgGa_2Se_4$ single crystal thin films was annealed in Mg-, Se-, and Ga-atmospheres, the origin of point defects of $MgGa_2Se_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Mg}$, $V_{Se}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $MgGa_2Se_4$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $MgGa_2Se_4$/GaAs did not form the native defects because Ga in $MgGa_2Se_4$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Society for Nondestructive Testing
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• v.25 no.2
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• pp.117-126
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• 2005

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C\;and\;440^{\circ}C$, respectively The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4}eV/K)T^2/T(T+332K)$. After the as-grown $AgGaS_2$, single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag},\;V_s,\;Ag_{int},\;and\;S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaS_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $AgGaS_2$ crystal thin films did not form the native defects because Ga in $AgGaS_2$ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2003.09a
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• pp.298-301
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• 2003

생물학적 토양오염 복원기술은 산소와 영양염류를 오염토양에 공급하여 호기성 미생물의 대사작용을 자극함으로써 유류를 생분해 하는 방법으로 널리 사용되고 있다. 유류에 오염된 토양은 혐기성 상태인 경우가 대부분이기 때문에, 호기성 미생물을 이용하기 위해서는 충분한 산소를 공급하여야 하므로 운전비가 많이 드는 단점이 있다. 최근에는 혐기성 미생물을 이용하여 유류오염 토양을 정화하는 방법이 보고되고 있다. 혐기성 생분해 방법은 다소 분해 속도는 느리지만 산소를 공급하지 않기 때문에 경제적인 유류오염토양 복원 방법으로 주목받고 있다. 본 연구에서는 디젤을 사용하여 인위적으로 10000 mg/kg.TPH soil의 농도로 오염시킨 토양 50g을 100$m\ell$ 용적의 vial에 주입하고 하수처리장의 혐기성 소화조 슬러지를 15$m\ell$, 30$m\ell$을 주입하여 배양하였으며 TPH의 분해량과 CH$_4$ 및 $CO_2$ 발생량을 측정하였다. vial의 기상을 $N_2$가스로 치환함으로써 혐기성 상태가 되도록 하였으며, 35$^{\circ}C$에서 90일간 배양하였다. 그 결과, 슬러지를 주입하지 않은 대조군의 경우에는 TPH의 분해가 거의 없었지만, 슬러지를 주입한 경우에는 TPH(Total Petroleum Hydrocarbon)농도가 55% 제거된 것으로 나타났다. TPH의 분해는 CH$_4$ 및 $CO_2$ 발생량과 밀접한 상관관계를 보였다. 본 연구의 결과로부터 하수처리장의 혐기성 소화조 슬러지를 이용한 유류오염 토양의 복원 가능성을 확인할 수 있었다.양에서 유동 가능성이 있는 중금속만을 추출하였다. 분석실험은 토양의 Cd2+ 와 Pb2+를 대상으로 행하여졌으며, 여러 토양에서 추출 분석한 결과를 EDTA분석결과와 비교하였다. 실험결과, 중금속은 매우 신속하게 고분자 자성체와 결합하였고, 그 후 자성체를 외부 자장으로 모은 후 산으로 용해시키고, 결합된 중금속은 Graphite furnace AAS로 분석함으로써 빠르고 효율적으로 분석실험을 수행할 수 있음을 알 수 있었다. 한편, 실험에서 나타난 수치들을 비교 검토한 결과 토양 분석시 sandy soil에서는 자성체를 이용한 분석이 EDTA에 의한 방법보다 더 높은 추출도를 보인 반면, silt 함량이 많은 토양의 경우에서 EDTA분석에서 더 높은 중금속 추출도를 보였다.s 중에서 490nm와 555nm의 복합밴드를 포함하는 OC2 알고리즘(ocean color chlorophyll 2 algorithm)을 사용하는 것이 OC2 series 및 OC4 알고리즘보다 좋은 추정 값을 도출할 수 있을 것으로 기대된다.환경에서는 5일에서 7월에 주로 이 충체의 유충이 발육되고 전파되는 것으로 추측되었다.러 가지 방법들을 적극 적용하여 금후 검토해볼 필요가 있을 것이다.잡은 전혀 삭과가 형성되지 않았다. 이 결과는 종간 교잡종을 자방친으로 하고 그 자방친의 화분친을 사용할 때만 교잡이 이루어지고 있음을 나타내고 있다. 따라서 여교잡을 통한 종간잡종 품종육성 활용방안을 금후 적극 확대 검토해야 할 것이다하였다.함을 보이고 있다.X> , ZnCl$_{3}$$^{-}$같은 이온과 MgCl$^{+}$, MgCl$_{2}$같은 이온종을 형성하기 때문인것 같다. 한편 어떠한 용리액에서

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.1
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• pp.22-27
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• 2017

$TiO_2$ films, thickness of $1{\sim}30{\mu}m$ were deposited on glass substrate at room temperature by room temperature granule spray in vacuum. The starting powder was calcinated at $600^{\circ}C$ for 4 h using $Al_2O_3$ crucible in the furnace. The particle size of the $TiO_2$, $1.5{\mu}m$ was measured by a particle size analyzer. The effect of different process parameters such as number of pass, gas flow rate and feeder voltage was studied. As the number of passes increased, the film thickness increased proportionally due to adequate kinetic energy conserved. The effect of three different flow rates (i.e. 15, 25, and 35 LPM) on deposited film was investigated. As gas flow rate increased, the film thickness increased up to 25 LPM and then decreased. Higher feeder voltage with low flow rate of 15 LPM resulted in unsufficient coating thickness due to insufficient kinetic energy. Microstructure of $TiO_2$ films was investigated by scanning electron microscope and high resolution tramission electron microscope.

• Journal of the Korea Concrete Institute
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• v.29 no.2
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• pp.217-223
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• 2017

This research was planned to evaluate the structural performance of post tensioned(PT) concrete member subjected to fire. Prime objective was to suggest some techniques to evaluate the performance of post tensioned concrete beam and slab exposed to high temperature through experiment. To accomplish this objective, the following two scopes have been proceeded to verify the strength reducing ratio of strands and find out the difference of resisting force at the PT concrete members exposed to high temperature through the fire test. The properties of prestressing steel(tendon) in PT concrete beam and slab under variable temperatures were reviewed. The test of this study was shown that stress relaxation occurred at high temperature, and some restoration of tensional force appeared as it got cooling down. The residual tension of the post tensioned beams at 4 hours after reaching the target temperature were 70% at $400^{\circ}C$, 10% at $600^{\circ}C$ and 2% at $800^{\circ}C$. The post tensioned slabs were 94% at $400^{\circ}C$, 84.5% at $600^{\circ}C$ and 62% at $800^{\circ}C$. The reason why the residual tension loss of the post tensioned slab was relatively small was considered to be that the slab was exposed just one side to high temperature and the strength of the strand was restored larger than that of beam. Also, it was confirmed that the post tensioned member inevitably experienced the loss of strength by fire damage, and restoration design of the member should be required to compensate for the value as much as lost strength.

• Journal of Technologic Dentistry
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• v.30 no.2
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• pp.39-45
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• 2008

Titanium and its alloys are widely used as dental implants materials because of their excellent mechanical properties. However, the alumina and zirconia ceramics are preferred to use as the substitute of Ti implants because there is a problems in esthetics and biocompatibility in Ti implant. The the glass infiltrated alumina ceramics are studied to increase the toughness and biocompatibility. The 45S5 and soda-lime glass powder was mixed with ethanol at ratio of 1:1 and brushed on the surface of alumina. Then it was heat treated in the electric furnace at $1400^{\circ}C$ from 30 min. to 5 hours. The glass powder was controlled from 200 to $350{\mu}m$ using ball milling. After heat treatment, the glass infiltrated specimen was tested in universal testing machine to measure the bending strength. The surface microstructure of each specimen was observed with SEM. The biocompatibility of 45S5 and soda-lime glass coated alumina was investigated using PBS at $36.5^{\circ}C$ incubator. The specimen was immersed in PBS for 3, 5, 7, 10 days. After that, the surface morphology was investigated with SEM. As the results of experiment, the 45S5 bioglass infiltrated alumina show the increase of bending strength according to the increasing of heat treatment time from 30 min. to 5 hours at $1400^{\circ}C$ Finally the 1370N bending strength of alumina increased to 1958N at 5 hours heat treatment, which shows 1.4 times higher. In contrast to this, the soda lime glass infiltrated alumina ceramics shows the convex curve according to heat treatment time. Thus it shows maximum bending strength of 1820N at 1 hour heat treatment of $1400^{\circ}C$ It gives 1.3 times higher. However, the bending strength of soda lime glass infiltrated alumina is decreasing with increasing heat treatment time after 1 hour. The precipitation on the surface of 45S5 glass infiltrated alumina was revealed as a sodium phosphate ($Na_{6}P_{6}O_{24}6H_{2}O$) and the amount of precipitation is increasing with increasing of immersion time in PBS. In contrast to this, there is no precipitation are observed on the surface of soda lime glass infiltrated alumina. This implies that 45S5 glass infiltrated alumina brings more biocompatible when it is implanted in human body.