• 한국해양공학회지
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• 제23권2호
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• pp.81-86
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• 2009

Infrared thermography was used to determine the location, size, and depth of defects under the surface of M.C nylon. Defects were created in a specimen by back-drilling circular holes. These defects were located at the maximum temperature difference that occurred. The sizes of the defects could be calculated by means of the full width at half of the maximum temperature difference. The depth of a defect could be calculated by the peak time and the maximum temperature difference. The maximum temperature difference between a defect and normal part was decreased with the depth of the defect. And the peak time also slowly appeared with the depth of the defect.

• 한국정밀공학회지
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• 제21권2호
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• pp.218-223
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• 2004

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by Micro-lapping process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of crystalline sapphire wafer at surface has a full width at half maximum of 250 arcsec. This value at the surface sapphire wafer surfaces indicated 0.12${mu}m$ sizes. Surfaces of sapphire wafers were mechanically affected by residual stress and surface default. As a result, the value of surface roughness of sapphire wafers measured by AFM(Atom Force Microscope) was 2.1nm.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.82-85
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• 2003

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by Micro-lapping process. The sapphire crystalline wafers were characterized by DCXD(Double Crystal X-ray Diffraction). The sample quality of crystalline sapphire wafer at surface has a FWHM(Full Width at Half Maximum) of 250 arcsec. This value at the sapphire wafer surfaces indicated 0.12${\mu}{\textrm}{m}$ sizes. Surfaces of sapphire wafers were mechanically affected by residual stress and surface default. Also Surfaces roughness of sapphire wafers were measured 2.1 by AFM(Atom Force Microscope).

• Bulletin of the Korean Chemical Society
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• 제22권8호
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• pp.807-815
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• 2001

Two-dimensional (2D) correlation method, which generates the synchronous and the asynchronous 2D spectrum by complex cross correlation of the Fourier transformed spectra, is an analysis method for the changes of the sample spectrum induced by vari ous perturbations. In the present work, the 2D electronic correlation spectra have been simulated for the cases where the sample spectrum composed of two gaussian bands changes linearly. When only the band amplitudes of the sample spectrum change, the synchronous spectrum shows strong peaks at the band centers of the sample spectrum, but the asynchronous spectrum does not make peaks. When the sample spectrum shifts without changing intensity and width, the synchronous spectrum shows peaks around the initial and final positions of the band maximum and the asynchronous spectrum shows long peaks spanning the shifting range. The band width change produces the complex 2D correlation spectra. When the sample spectrum shifts with band broadening, the width change by 50% of full width at half maximum (FWHM) does not give so large an effect on the correlation spectrum as the spectral shift by one half of FWHM of the sample spectrum.

• Composites Research
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• 제34권3호
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• pp.143-147
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• 2021

유리섬유 복합재료(GFRP) 내부 미세 박리에서 나타나는 테라헤르츠(THz) 중첩 신호의 FWHM 분석을 통한 미세 박리 검출 기술을 연구하였다. 테라헤르츠 시간영역 분광(THz-TDS) 시스템의 반사모드를 통해 유리섬유 복합재료 내부의 미세 박리 크기 별 THz 신호를 측정하였고, 미세 박리 위치에서 반사되어 검출되는 THz 중첩 신호의 Full Width Half Maximum (FWHM) 값을 추출하였다. 이후, 유리섬유 복합재료의 복소굴절률을 측정하여 미세 박리 크기에 따른 미세 박리 위치에서의 THz 중첩 신호 및 FWHM 값을 계산하여 비교하였다. 이론적으로 계산된 THz 중첩 신호로부터 미세 박리 크기와 중첩 신호에서의 FWHM 값의 상관관계를 도출하였으며, 미세 박리 위치에서의 THz 신호로부터 추출된 FWHM의 분석을 통해 미세 박리 크기를 예측할 수 있었다.

• 한국결정성장학회지
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• 제27권3호
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• pp.105-109
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• 2017

고주파 유도 가열 장치를 이용하여 승화법으로 성장된 AlN 단결정을 질소 분위기 하에서 $1200^{\circ}C$와 $1500^{\circ}C$에서 열처리하였다. 열처리 후 단결정 시편들의 표면을 광학현미경으로 관찰하였으며, DCXRD(Double crystal X-ray Diffractometry)를 이용하여 FWHM(Full width of half maximum) 값을 측정하여 결정성의 변화를 평가하였다.

• Current Optics and Photonics
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• 제7권2호
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• pp.191-199
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• 2023

We propose a dual Fabry-Perot interferometer (DFPI) structure that combines two Fabry-Perot interferometers. The structure is designed to have spectral peaks in the red, green, and blue regions simultaneously, to be applicable to R, G, and B subpixels without any patterning process. The optimized structure has been fabricated on a glass substrate using a thermal evaporation technique. When the DFPI structure was attached to the quantum-dot color-conversion layer, the full width at half maximum values of the green and red spectra decreased by 47.29% and 51.07% respectively. According to CIE 1931 color space, the DFPI showed a 37.66% wider color gamut than the standard RGB color coordinate. Thus it was experimentally proven that the proposed DFPI structure improved color purity. This DFPI structure will be useful in realizing a display with high color purity.

• 한국진공학회지
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• 제11권2호
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• pp.97-102
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• 2002

유기금속화학기상증착방법 (metal-organic chemical vapor deposition : MOCVD)을 이용하여 실리콘 (100) 기판위엔 ZnO막을 증착하였다. 공정온도 ($250^{\circ}C$~$400^{\circ}C$)와 Ar과 $O_2$가스의 유량 비 변화에 따른 ZnO막의 특성변화를 조사하였다. 막의 결정성은 공정온도가 증가함에 따라 향상되었으며 $400^{\circ}C$에서 $0.4^{\circ}$의 반치폭(full width at half maximum : FWHM)을 얻었다. 공정온도 변화에 따른 표면 평활도(surface smoothness)변화는 결정성과 반대의 경향성을 보였다.

• 한국초전도ㆍ저온공학회논문지
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• 제5권3호
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• pp.20-22
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• 2003

Y$_2$O$_3$ films were pulsed laser deposited on cube textured Ni and Ni-W substrates to be used as a single buffer layer of YBCO coated conductor. Initial deposition of $Y_2$O$_3$ films was performed in a reducing atmosphere, and subsequent deposition was done in the base pressure of the chamber and oxygen atmosphere. The $Y_2$O$_3$ films have a strong cube texture (The full width at half maximum of the ø-scan of $Y_2$O$_3$ was 8.4 which was the same as that of metal substrate) and smooth crack-free microstructure. The biaxially textured YBCO films (The full width at half maximum of the ø-scan was 10.2) pulsed laser deposited on the $Y_2$O$_3$/metal exhibited Tc(R=0) of 86.5K and Jc of 0.7 MA/cm2 at 77K in self field, representing that the $Y_2$O$_3$ single buffer layer is an efficient diffusion barrier of Ni and thus very promising for the achievement of high-Jc YBCO coated conductor.

• 한국광학회지
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• 제13권4호
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• pp.319-323
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• 2002

Linewidth enhancement factor ($\alpha{-factor}$) 값이 2와 4인 두 종류의 1.55${\mu}m$ 다층양자우물(Multi-Quantum Well; MQW) 대면적 레이저 다이오드를 제작하였다. 제작된 레이저 다이오드의 far-field 측정 결과 $\alpha{-factor}$ 값이 4일 때 보다 2인 구조에서 반폭치(Full Width at Half Maximum; FWHM)와 필라멘테이션(filamentation)이 감소되었다. 주입전류의 증가에 따라 두 종류 모두 far-field의 FWHM의 증가 현상이 나타났고 이는 filament spacing이 감소하였기 때문으로 설명된다.