• Bulletin of the Korean Mathematical Society
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• v.60 no.2
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• pp.339-348
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• 2023

It is shown that every nilpotent-invariant module can be decomposed into a direct sum of a quasi-injective module and a square-free module that are relatively injective and orthogonal. This paper is also concerned with rings satisfying every cyclic right R-module is nilpotent-invariant. We prove that R ≅ R₁ × R₂, where R₁, R₂ are rings which satisfy R₁ is a semi-simple Artinian ring and R₂ is square-free as a right R₂-module and all idempotents of R₂ is central. The paper concludes with a structure theorem for cyclic nilpotent-invariant right R-modules. Such a module is shown to have isomorphic simple modules eR and fR, where e, f are orthogonal primitive idempotents such that eRf ≠ 0.

• ETRI Journal
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• v.21 no.4
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• pp.65-82
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• 1999

We present a calculation model for an improved quantitative theoretical analysis of electronic and optical properties of strained-piezoelectric[111] InGaAs/GaAs superlattices (SLs). The model includes a full band-coupling between the four important energy bands: conduction, heavy, light, and spin split-off valence bands. The interactions between these and higher lying bands are treated by the k ${\cdot}$ p perturbation method. The model takes into account the differences in the band and strain parameters of constituent materials of the heterostructures by transforming it into an SL potential in the larger band-gap material region. It self-consistently solves an $8{\times}8$ effective-mass $Schr{\ddot{o}}dinger$ equation and the Hartree and exchange-correlation potential equations through the variational procedure proposed recently by the present first author and applied to calculate optical matrix elements and spontaneous emission rates. The model can be used to further elucidate the recent theoretical results and experimental observations of interesting properties of this type of quantum well and SL structures, including screening of piezoelectric field and its resultant optical nonlinearities for use in optoelectronic devices.