• Journal of the Korean Magnetics Society
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• v.12 no.6
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• pp.231-234
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• 2002

Magnetic properties are investigated for top- and bottom-type spin valves of Si/SiO$_2$/NiO(60nm)/Co(2.5nm)/Cu(1.95nm)/Co(4.5nm)/NOL(t nm; Nano Oxide layer). The MR ratios of the bottom-type spin valves with NOL are larger than those of the top-type spin valves. However, the enhancement of the former is lower than the latter. Both of spin-valves also showed almost constant Ap and smaller p. Enhanced MR ratios of spin valves with NOL result mainly from small values of with constant Ap which due to specular diffusive electron scattering at NOL(NiO)/metal interfaces.

• Journal of the Korean Magnetics Society
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• v.13 no.3
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• pp.97-102
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• 2003

Synthetic ferrimagnetic layer (SyFL) with structure NiFe/Ru/NiFe which can be applied high density TMR device in free layer were prepared by an inductively coupled plasma (ICP) helicon-sputter. We proposed a model of predicting coercivity (H$\_$c/), spin-flopping field (H$\_$sf/), and saturation field (H$\_$s/) as a function of Ru thicknesses, from the equilibrium state of energies of Zeeman, exchange, and uniaxial anisotropy. We fabricated the samples of Ta(50 ${\AA}$)/NiFe(50${\AA}$)nu(4∼20${\AA}$)NiFe(30 ${\AA}$)/Ta(50${\AA}$), and measured the M-H loops with a superconduction quantum interference device (SQUID) applying the external field up to ${\pm}$ 15 kOe. The result was well agreed with the proposed model, and reveal K$\_$u = 1000 erg/㎤, J$\_$ex/ =0.7 erg/$\textrm{cm}^2$. We report that H$\_$c/ below 10 Oe is available, and R$\_$u/ thickness range should be in 4-10 ${\AA}$ for MRAM application. Our result implies that permalloy layers may lead to considerable magnetostriction effect in SyFL and intermixing in NiFe/Ru interfaces.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.172-177
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• 2007

In order to detect of the magnetic property in the cell unit, we studied the GMR-SV (giant magnetoresistance-spin valves) biosensor, which was depended on the micro patterned features according to two easy directions of longitudinal and transversal axes. Here, the multi layer structure was glass/NiO/NiFe/CoFe/Cu/CoFe/NiFe. The uniaxial anisotropy direction was applied to the patterned biosensor during the deposition and vacuum post-annealing at $200^{\circ}C$ under the magnitude of 300 Oe, respectively. Considering the magnetic shape anisotropy effect, the size of micro patterned biosensor was a $2{\times}5{\mu}m^2$ after the photo lithography process. By our experimental results, we confirmed that the best condition of GMR-SV biosensor should be the same direction of the axis sensing current and the easy axis of pinned NiO/NiFe/CoFe triple layer oriented to the width direction of device, and the direction of the easy axis of free CoFe/NiFe bilayer was according to the longitudinal direction of device.

• Journal of the Korean Magnetics Society
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• v.10 no.2
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• pp.62-66
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• 2000

Annealing cycle number and nonmagnetic layer thickness dependences of interlayer coupling field ( $H_{inf}$ ) and coercivity ( $H_{cf}$ ) of free magnetic layer on NiMn alloy-spin valve films (SVF) were investigated. The SVF is Glass (7059)/N $i_{81}$F $e_{l9}$(70 $\AA$)/Co(10 $\AA$)/Cu(t $\AA$)/Co(15 $\AA$)N $i_{81}$$Fe_{19}$(35 $\AA$)/N $i_{25}$M $n_{75}$(250 $\AA$)Ta(50 $\AA$) films, it were fabricated using the dc sputtering method at different pinning layer thickness and nonmagnetic spacer thickness (Cu thickness; 30 $\AA$, 35 $\AA$, 40 $\AA$) of NiMn alloy with 25 at.%. Ni In case that Cu thickness of SVF is 35 $\AA$ and peak exchange coupling field ( $H_{ex}$) was 620 Oe, while coercivity $H_{c}$ = 280 Oe and MR ratio showed 2.5%. As for $H_{inf}$ and $H_{cf}$ , every SVF increased up to the stabilized values with the increase of annealing cycle number 15, which were $H_{inf}$ of 120 Oe and $H_{cf}$ of 75 Oe. The increase of $H_{cf}$ with the annealing cycle number seems to be caused by the effective reduction of Cu layer thickness due to the increase of interfacial mixing of Cu layer and Co layer. In addition, the $H_{inf}$ and $H_{cf}$ dependences of free NiFe layer by the interfacial mixing effect were appeared the different aspects when Cu layer becomes more thinner and thicker than Cu layer thickness of 35 $\AA$, respectively.ively....

• Journal of the Korean Magnetics Society
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• v.8 no.1
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• pp.27-33
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• 1998

We have investigated tunneling magnetoresistance (TMR) properties of Fe/$Al_2O_3$/Co magnetic trilayer junctions sputtered on single-crystal Si (001) substrates. $Al_2O_3$ layers with thicknesses of 50~200 $\AA$ were deposited directly on the bottom ferromagnetic layer by a reactive rf sputtering. For comparsion, we prepared Pt/$Al_2O_3$/Pt tunnel junctions whose current-voltage (I-V) characteristics measured at 300 K indicated that reactively sputtered $Al_2O_3$ is a particularly good material for thin insulating barriers and allows us to form pinhole-free tunnel barriers. The magnetic tunnel junctions exhibit changes of tunnel resistance of about 0.1% at 300 K with an applied magnetic field and it was found that most junctions with Co as a top electrode have rather good I-V and TMR characteristics compared to those with Fe as a electrode. These results were discussed in relation to interfacial on the basis of those for Pt/$Al_2O_3$/Pt.

• Progress in Superconductivity and Cryogenics
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• v.24 no.3
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• pp.47-51
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• 2022

With the innovative development of bio, pharmaceutical, and semiconductor technologies, it is essential to demand a next-generation transfer system that minimizes dust and vibrations generated during the manufacturing process. In order to develop dust-free and non-contact transfer systems, the high temperature superconductor (HTS) bulks have been applied as a magnet for levitation. However, sintered HTS bulk magnets are limited in their applications due to their relatively low critical current density (J_c) of several kA/cm² and low mechanical properties as a ceramic material. In addition, during cooling to cryogenic temperatures repeatedly, cracks and damage may occur by thermal shock. On the other hand, the bulk magnets made by stacked HTS tapes have various advantages, such as relatively high mechanical properties by alternate stacking of the metal and ceramic layer, high magnetic levitation performance by using coated conductors with high J_c of several MA/cm², consistent superconducting properties, miniaturization, light-weight, etc. In this study, we tried to fabricate HTS tapes stacked bulk magnets with 60 mm × 60 mm area and various numbers of HTS tape stacked layers for magnetic levitation. In order to examine the levitation forces of bulk magnets stacked with HTS tapes from 1 to 16 layers, specialized force measurement apparatus was made and adapted to measure the levitation force. By increasing the number of HTS tapes stacked layers, the levitation force of bulk magnet become larger. 16 HTS tapes stacked bulk magnets show promising levitation force of about 23.5 N, 6.538 kPa at 10 mm of levitated distance from NdFeB permanent magnet.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.210-219
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• 2000

The magnetoresistance characteristics of FeN/Co/Cu/Co and FeN/Co/Cu/Co/Cu/Co/FeN multilayers using ferromagnetic iron-nitrides (FeN) has been studied. The microstructure of FeN film is the mixed ${\alpha}$-Fe and $\varepsilon$-Fe$_3$N phase on the condition that the flow rate of N$_2$ gas is over 0.4 sccm. The magnetoresistance effect is observed because of shape magnetic anisotropy induced by needle-shaped $\varepsilon$-Fe$_3$N phase. This magnetoresistance effect changes, because the degree that the shape magnetic anisotropy adheres to the adjacent Co pinned layer is varied according to the flow rate of N$_2$ gas and the thickness of FeN film. The best magnetoresistance effect is obtained on the condition that the thickness of Co free layer is 70 ${\AA}$ and the maximum MR ratio(%) value of 3.2% shows in the FeN(250 ${\AA}$)/Co(70 ${\AA}$)/Cu(25 ${\AA}$)/Co(70 ${\AA}$)/Cu(25 ${\AA}$)/Co(70 ${\AA}$)/FeN(250 ${\AA}$) mutilayer film which is fabricated at the N, gas flow rate of 0.5 sccm and the FeN film thickness of 250 ${\AA}$. Four steps are observed in the magnetoresistance curve owing to this difference of coercive force, because respective magnetic layers in the multilayer possess different coercive forces. These effects observed in these mutilayer films can be expected to application to the memory device the same MRAM as can carry out simultaneously four signals.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.369-373
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• 2003

Magneto-optic Kerr Effect(MOKE), AFM and magnetoresistance measurements have been carried out on as-deposited and annealed Magnetic Tunnel Junctions(MTJs) with junction sizes 180, 250, 320 and 380 $\mu\textrm{m}$ in order to investigate the correlation among interlayer exchange coupling, surface roughness and junction size. Relatively irregular variations of coercivity $H_{c}$ (∼17.5 Oe) and interlayer exchange coupling $H_{E}$ (∼17.5 Oe) are observed over the junction in as-deposited sample prepared by DC magnetron sputtering. After annealing at $200^{\circ}C$, $H_{c}$ decreases to 15 Oe, while $H_{ E}$ increases to 20 Oe with smooth local variation. $H_{E}$ shows very good correlation with surface roughness across the junction in agreement with Neel's orange peel coupling. The increasing slope per $\mu\textrm{m}$ of normalized $H_{c}$ and $H_{E}$ are same near junction edge along free-layer direction irrespective of junction size, giving relatively uniform $H_{c}$ and $H_{ E}$ for wider junction size. Thickness profiles of the junctions measured with $\alpha$-step show increasingly flat top surface for larger junctions, indicating better uniformity for large. junctions in agreement with the normalized$ H_{c}$ and H$/_{E}$ curves. TMR ratios also increase with increasing junction size, indicating improvement for larger uniform junctions.

• Journal of the Mineralogical Society of Korea
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• v.9 no.1
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• pp.7-16
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• 1996

Partially sericitized tourmaline from a pegmatite, Black Hills, South Dakota, U.S.A., was investigated using high-resolution transmission electron microscopy (HRTEM). Muscovite occurs as the only alteration product of tourmaline, and it is developed extensively as narrow veinlets along the {110} and {100} cleavage directions of tourmaline, indicating that a cleavage-controlled alteration mechanism was dominant. Muscovite was characterized mainly as two-layer polytypes with minor stacking disorder, but tourmaline is almost free of structural defects. HRTEM images of tourmaline-muscovite interfaces revealed that the interfaces between two minerals are composed of well-defined {110} and {100} boundaries of tourmaline. The (001) of muscovite is in general parallel to the c-axis of tourmaline, but tourmaline and replacing muscovite do not show specific crystallographic orientation relationship; muscovite consists of numerous 100-1000$\AA$ thick subparallel packets, and the angles between the (001) of muscovite and (110) of tourmaline is highly variable. Al/Si ratios of both minerals suggest that tourmaline to muscovite alteration by late magnetic fluids has been facilitated by their similar Al/Si ratio in the incipient alteration stage, in that the hydration reaction with preservation of Al and Si would require only addition of K+ and H2O. Aluminous minerals other than muscovite were not characterized as the alteration products of tourmaline, indicating that tourmaline reacted directly to muscovite; the tourmaline alteration apparently occurred by the presence of residual fluids in which K+ is available and silica was not undersaturated.

• Journal of the Korean Magnetics Society
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• v.12 no.6
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• pp.201-205
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• 2002

The tunneling magnetoresistance (TMR) of a ramp-edge type junction has been studied. The samples with a structure of NiO(60)/Co(10)/NiO(60)/Si$_3$N$_4$(2-6)/NiFe(10) (nm) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics was obtained from a ramp-type tunneling junctions having the dominant difference between zero and ＋90 Oe perpendicular to the junction edge line. The voltage dependence of TMR was stable up to a bias volt of $\pm$10 V with a TMR ratio of about -10%, which may be very peculiar magnetic tunneling properties with asymmetric tunneling process between wedge Co pinned layer and NiFe free layer.