• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.195-196
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• 2010

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.394-397
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• 2003

MTJ devices are fabricated using metal shadow masks and switching characteristics are investigated under 2 dimensional magnetic field. When the hard axis field is less than $\pm$ 16 Oe, switching behavior is similar to that based on the Stoner-Wohlfarth model. As the hard axis field is larger than $\pm$ 16 Oe, deviation from the expectation by Stoner-Wohlfarth model is observed. These phenomena are induced by the generation of multi-domain and inhomogeneous magnetization reversal.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.50-51
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• 2002

최근 실온에서 약 40％ 이상의 높은 자기저항(magnetoresistance, MR)을 나타내는 자기 터널 접합(magnetic tunnel junction, MTJ)이 보고되면서 비휘발성 자기메모리로의 응용을 눈앞에 두고 있다.[1]. 이에 본 실험에서는 Substrate / Ta (base electrode) / NiFe / PtMn (AF pinning layer) / CoFe (pinned) / Ru / CoFe (fixed) / Al-O/ CoFe (free) / NiFe (free) / Ta & Ru (Capping Layer)과 같은 MTJ 증착 구조를 사용하여, MTJ의 보다 향상된 특성을 확보하기 위한 노력으로서 Al-O 두께, 어닐링 조건(Field Intensity ＆ Sequence)변화 등을 시도하였다. (중략)

• Proceedings of the Korean Magnestics Society Conference
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• 2011.12a
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• pp.46-47
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• 2011

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.193.1-193.1
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• 2008

• Journal of Magnetics
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• v.3 no.3
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• pp.92-95
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• 1998

In this paper we report the low and high angle diffraction results, and the magnetic and magnetroesistive characteristics of the spin valve multilayer structure prepared by the sputter machine Emerald II in the Balzers Laboratory. The investigated system consists of a ferromagnetic free layer (7 nm NiFe) and a ferromagnetic pinned layer (7 nm NiFe), separated from each other by a nonmagnetic (2.1 nm Cu) spacer. The NiFe pinned layer is fixed by the exchange coupling with an antiferromagnetic layer (10 nm FeMn). For such system the magnetoresistance ratio ΔR/R=3.58%, the interlayer exchange coupling $H_c=6.4$ Oe and the field sensitivity 1.15%/Oe were otained.

• Journal of the Korean Magnetics Society
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• v.20 no.3
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• pp.89-93
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• 2010

We study the giant magneto-resistance (GMR), coercivity and their dependence on the ferromagnetic layers adjacent to the nonmagnetic layer in a spin-valve structure, [Pd/ferromagnetic] multilayers with perpendicular anisotropy. We fabricated a basic spinvalve structure of $[Pd/Co]_2$/ferro-magnetic layer/nonmagnet/ferro-magnetic layer/$[Pd/Co]_2$/FeMn and investigated the dependence of its GMR and magnetic properties such ad coercivity on the ferromagnetic material to reduce the coercivity of the free layer. We try to reduce the freelayer coercivity by controlled the anisotropy, we insert the material NiFe, $Co_8Fe_2$, $Co_9Fe_1$ to ferromagnetic layers adjacent to the Cu layer. Then, we have been able to reduce the coercivity as low as 100 Oe, and also achieved 6.7% of magneto-resistance ratio when the ferromagnetic layer thickness was 0,7 nm.

• Steel and Composite Structures
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• v.26 no.3
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• pp.273-287
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• 2018

Buckling and free vibration analysis of sandwich micro plate (SMP) integrated with piezoelectric layers embedded in orthotropic Pasternak are investigated in this paper. The refined Zigzag theory (RZT) is taken into consideration to model the SMP. Four different types of functionally graded (FG) distribution through the thickness of the SMP core layer which is reinforced with single-wall carbon nanotubes (SWCNTs) are considered. The modified couple stress theory (MCST) is employed to capture the effects of small scale effects. The sandwich structure is exposed to a two dimensional magnetic field and also, piezoelectric layers are subjected to external applied voltages. In order to obtain governing equation, energy method as well as Hamilton's principle is applied. Based on an analytical solution the critical buckling loads and natural frequency are obtained. The effects of volume fraction of carbon nanotubes (CNTs), different distributions of CNTs, foundation stiffness parameters, magnetic and electric fields, small scale parameter and the thickness of piezoelectric layers on the both critical buckling loads and natural frequency of the SMP are examined. The obtained results demonstrate that the effects of volume fraction of CNTs play an important role in analyzing buckling and free vibration behavior of the SMP. Furthermore, the effects of magnetic and electric fields are remarkable on the mechanical responses of the system and cannot be neglected.

• Journal of Magnetics
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• v.10 no.2
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• pp.48-51
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• 2005

The spin transfer induced magnetization switching has been reported to occur in magnetic multilayer structures whose scope usually consists of one stack of ferromagnetic / non-ferromagnetic / ferromagnetic (F / N / F) materials. In this work, it is shown that: 1) Copper used as a buffer layer between the free Co and the Au cap-layer can clearly increase the probability to get the spin transfer induced magnetization switching in a simple spin valve Co 11 / Cu 6/ Co 2 (nm); 2) Furthermore, when Ruthenium is simultaneously applied as a buffer layer on the Si-substrate, the critical switching currents can be reduced by $30\%$, and the absolute resistance change delta R $[{\Delta}R]$ of that stack can be enlarged by $35\%$. The enhancement of the spin transfer induced magnetization switching can be ascribed to a lower local stress in the thin Co layer caused by a better lattice match between Co and Cu and the smoothening effect of Ru on the thick Co layer.

• Journal of the Korean Magnetics Society
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• v.17 no.3
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• pp.120-123
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• 2007

The typical double-barrier magnetic tunnel junction (DMTJ) structure examined in this paper consists of a Ta 45/Ru 9.5/IrMn 10/CoFe7/$AlO_x$/free layer/AlO/CoFe 7/IrMn 10/Ru 60 (nm). The free layer consists of an $Ni_{16}Fe_{62}Si_8B_{14}$ 7 nm, $Co_{90}Fe_{10}$ (fcc) 7 nm, or CoFe $t_1$/NiFeSiB $t_2$/CoFe $t_1$ layer in which the thicknesses $t_1$ and $t_2$ are varied. The DMTJ with an NiFeSiB-free layer had a tunneling magnetoresistance (TMR) of 28%, an area-resistance product (RA) of $86\;k{\Omega}{\mu}m^2$, a coercivity ($H_c$) of 11 Oe, and an interlayer coupling field ($H_i$) of 20 Oe. To improve the TMR ratio and RA, a DMTJ comprising an amorphous NiFeSiB layer that could partially substitute for the CoFe free layer was investigated. This hybrid DMTJ had a TMR of 30%, an RA of $68\;k{\Omega}{\mu}m^2$, and a of 11 Oe, but an increased of 37 Oe. We confirmed by atomic force microscopy and transmission electron microscopy that increased as the thickness of NiFeSiB decreased. When the amorphous NiFeSiB layer was thick, it was effective in retarding the columnar growth which usually induces a wavy interface. However, if the NiFeSiB layer was thin, the roughness was increased and became large because of the magnetostatic $N{\acute{e}}el$ coupling.