• Tribology and Lubricants
• /
• 제34권6호
• /
• pp.209-216
• /
• 2018

Sapphire is a substrate material that is widely used in optical and electronic devices. However, the processing of sapphire into a substrate takes a long time owing to its high hardness and chemical inertness. In order to process the sapphire ingot into a substrate, ingot growth, multiwire sawing, lapping, and polishing are required. The lap grinding process using pellets is known as one of the ways to improve the efficiency of sapphire substrate processing. The lap grinding process ensures high processing efficiency while utilizing two-body abrasion, unlike the lapping process which utilizes three-body abrasion by particles. However, the lap grinding process has a high material removal rate (MRR), while its weakness is in obtaining the required surface roughness for the final polishing process. In this study, we examine the effects of free abrasives in lap grinding on the material removal characteristics of sapphire substrate. Before conducting the lap grinding experiments, it was confirmed that the addition of free abrasives changed the friction force through the pin-on-disk wear test. The MRR and roughness reduction rate are experimentally studied to verify the effects of free abrasive concentration on deionized water. The addition of free abrasives (colloidal silica) in the lap grinding process can improve surface roughness by three-body abrasion along with two-body abrasion by diamond grits.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2003년도 춘계학술대회 논문집
• /
• pp.1836-1839
• /
• 2003

This paper describes the surface polishing characteristics of a flat and free surface ferromagnetic substance(SM45C) that magnetic abrasive polishing processed. The effects of the various working factors on the surface roughness are clarified by experiments respectively, such as magnetic flux density. rotation speed of magnetic head. working gap, feed rate of workpiece. diameter of magnetic abrasives. and shape of workpiece. On the basis of these experiments, the polishing mechanism is discussed and the characteristics of the polishing process are described. In addition, it is found experimentally that die ＆ mold surfaces are also polished precisely by this process

• 대한기계학회논문집A
• /
• 제36권3호
• /
• pp.259-264
• /
• 2012

비자성체의 자유곡면 자기연마 공정에서 자기력 세기의 향상은 매우 중요하다. 비자성체 자유곡면의 표면에 발생하는 자기력의 세기에 따라 자기연마 입자가 가지는 수직 절삭력이 변화하기 때문이다. 이러한 자기력 향상을 위하여 전자석 배열 테이블이 적용된 제 2세대 자기연마공정이 비자성체의 자유곡면 자기연마에 적용된다. 본 연구에서는 이러한 제 2세대 자기연마공정에서 전자석 배열 테이블에 발생하는 자기력 세기 향상을 위한 극성배열 방법을 제시하고 이를 알루미늄합금의 곡률 자기연마에 적용하였다. 그 결과 볼록 및 오목 형상에서 각각 S-N-S와 S-N-N-N-S 극성 배열에서 가장 높은 표면거칠기의 향상을 확인하였다. 또한 상승 가공경로에서 상대적으로 높은 표면거칠기 향상을 나타내었다.

• 한국정밀공학회지
• /
• 제25권9호
• /
• pp.32-37
• /
• 2008

Freestanding hydride vapor phase epitaxy grown GaN(Gallium Nitride) substrates subjected to various polishing methods were characterized for their surface and subsurface conditions, Although CMP(Chemical Mechanical Polishing) is one of the best approaches for reducing scratches and subsurface damages, the removal rate of Ga-polar surface in CMP is insignificant($0.1{\sim}0.3{\mu}m$/hr) as compared with that of N-polar surface, Therefore, conventional MP(Mechanical Polishing) is commonly used in the GaN substrate fabrication process, MP of (0001) surface of GaN has been demonstrated using diamond slurries with different abrasive sizes, Diamond abrasives of size ranging from 30nm to 100nm were dispersed in ethylene glycol solutions and mineral oil solutions, respectively. Significant change in the surface roughness ($R_a$ 0.15nm) and scratch-free surface were obtained by diamond slurry of 30nm in mean abrasive size dispersed in mineral oil solutions. However, MP process introduced subsurface damages confirmed by TEM (Transmission Electronic Microscope) and PL(Photo-Luminescence) analysis.

• 한국정밀공학회지
• /
• 제19권10호
• /
• pp.212-220
• /
• 2002

The finishing process for die and mold manufacturing is very important because it influences the final quality of products. Injection molds need higher quality surface than general purpose dies and molds. Conventional polishing can not make mold surface down to nanometer roughness efficiently because of their loading and glazing. This paper focused on the development of fixed abrasive pad using water swelling mechanism of polymer binder network. Self-conditioning was recognized as the long term polishing stabilization tool without any loading or glazing because water makes fixed abrasives free by swelling of the pad. Consequently, stable nano-polishing process has been applied on the injection mold, from the experimental results with polished surface roughness of Ra 15.1nm on STD-11 die steel.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2001년도 춘계학술대회 논문집
• /
• pp.1068-1071
• /
• 2001

Recently, the minimum line width shows a tendancy to decrease and the multi-level to increase in semiconductor. Therefore, a planarization technique is needed, which chemical polishing(CMP) is considered as one of the most important process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as microscratches, abrasive contaminations, and non-uniformity of polished wafer edges. Spin Etching can improve the defects of CMP. It uses abrasive-free chemical solution instead of slurry. Wafer rotates and chemical solution is simultaneously dispensed on a whole surface of the wafer. Thereby chemical reaction is occurred on the surface of wafer, material is removed. On this study, TEOS film is removed by CMP and Spin Etching, the results are estimated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU).

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 1997년도 추계학술대회 논문집
• /
• pp.935-938
• /
• 1997

Recently, the minimum line width shows a tendency to decrease and the multi-level increase in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as micro-scratches, abrasive contaminations, and non-uniformity of polished wafer edges. Wet etching include of Spin-etching can improve he defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(INterlayer-Dielectric) was removed by CMP and wet-etching methods in order to investigate the superiority of wet etching mechanism. In the thin film wafer, the results were evaluated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And pattern step height was also compared for planarization characteristics of the patterned wafer.

• 대한치과보존학회:학술대회논문집
• /
• 대한치과보존학회 2001년도 추계학술대회(제116회) 및 13회 Workshop 제3회 한ㆍ일 치과보존학회 공동학술대회 초록집
• /
• pp.576.2-576
• /
• 2001

The purpose of this study was to evaluate the effect of dentinal sclerosis and tubular orientation on Class V restoration bonded with three dentin bonding agents using confocal laser scanning microscope(CLSM). Class V cavities were prepared from freshly extracted caries-free human teeth. thirty of these cavities were divided into two groups based upon the status of class V cavities: Group 1, cervical abrasive lesions without preparation; Group 2, artificially-prepared wedge-shaped cavities.(omitted)

• 한국터널지하공간학회 논문집
• /
• 제24권5호
• /
• pp.395-409
• /
• 2022

기존 암반 굴착공법이 갖는 한계점을 극복하기 위해 최근 연마재 워터젯 공법을 활용하는 연구가 활발히 진행되고 있다. 연마재 워터젯 암반굴착 공법은 암반에 연속적인 자유면을 형성하여 발파 시 발생하는 진동을 저감하고 굴착효율을 증진시키는 효과가 있다. 그러나 연마재 워터젯 절삭성능은 암반의 물리적 성질에 따라 변화한다. 따라서, 다양한 물리적 성질을 가진 암반이 혼재하는 굴착현장 특성상 효과적인 워터젯 활용을 위해서는 다양한 암종의 절삭성능을 분석하는 것이 필수적이다. 본 연구에서는 현무암과 화강암을 대상으로 수압, 이격거리, 이송속도를 변화시키며 절삭실험을 수행하고 결과를 분석하였다. 실험결과, 현무암은 화강암보다 평균적으로 약 41% 깊게 절삭되고, 절삭 폭은 약 18.5% 좁게 형성되었다. 본 연구결과는 향후 현무암과 같은 강도가 낮고 공극이 큰 암반 굴착현장에서 연마재 워터젯을 적용할 시 유용한 기초자료로 활용될 것으로 기대된다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.78-78
• /
• 2007

In semiconductor devices, Cu has been used for the formation of multilevel metal interconnects by the damascene technique. Also lower dielectric constant materials is needed for the below 65 nm technology node. However, the low-k materials has porous structure and they can be easily damaged by high down pressure during conventional CMP. Also, Cu surface are vulnerable to have surface scratches by abrasive particles in CMP slurry. In order to overcome these technical difficulties in CMP, electro-chemical mechanical planarization (ECMP) has been introduced. ECMP uses abrasive free electrolyte, soft pad and low down-force. Especially, electrolyte is an important process factor in ECMP. The purpose of this study was to characterize KOH and $KNO_3$ based electrolytes on electro-chemical mechanical. planarization. Also, the effect of additives such as an organic acid and oxidizer on ECMP behavior was investigated. The removal rate and static etch rate were measured to evaluate the effect of electro chemical reaction.