• Korean Journal of Acupuncture
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• 제21권2호
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• pp.29-46
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• 2004

Objectives and Methods : This study was performed to investigate the effect of electro -acupuncture at four gates(bilateral LR3 and LI4) on brain activity in normal subjects using fMRI. Results and Conclusions : 1. fMRI signal increase by electro-acupuncture at Lt. LR3 was observed in Rt. Middle frontal gyrus in group average as well as more than half of the subjects. 2. fMRI signal decreases by electro-acupuncture at Lt. LR3 were observed in Rt. Superior frontal gyrus, Rt. Middle temporal gyrus, Rt. Cingulate gyrus in group average as well as more than half of the subjects. 3. fMRI signal increases by electro-acupuncture at Lt. LI4 were observed in Lt. Superior frontal gyrus, Lt. Middle frontal gyrus, Lt. Inf. Semi-Lunar Lobule(cerebellum), Rt. Middle frontal gyrus, Rt. Cingulate gyrus in group average as well as more than half of the subjects. 4. fMRI signal decreases by electro-acupuncture at Lt. LI4 were observed in Lt. Middle frontal gyrus, Lt. Inferior frontal gyrus, Lt. Precentral gyrus and Rt. Middle frontal gyrus, Rt. Middle temporal gyrus, Rt. Precuneus, Rt. Inferior frontal gyrus, Rt. Postcentral gyrus in group average as well as more than half of the subjects. 5. fMRI signal increase by electro-acupuncture at Lt. LR3 and Lt. LI4 in group average as well as more than half of the subjects was not observed. 6. fMRI signal decreases by electro-acupuncture at Lt. LR3 and Lt. LI4 were observed in Lt. culmen(cerebellum), Lt. Cingulate gyrus와 Rt. Middle frontal gyrus, Rt. Cingulate gyrus, Rt. Inferior frontal gyrus in group average as well as more than half of the subjects. 7. fMRI signal increases by electro-acupuncture at four gates (bilateral LR3 and LI4) were observed in Lt. Middle temporal gyrus and Lt. Postcentral gyrus in group average as well as more than half of the subjects. 8. fMRI signal decrease by electro-acupuncture at four gates (bilateral LR3 and LI4) were observed in Lt. Middle frontal gyrus, Lt. Precentral gyrus, Lt. Inferior frontal gyrus, Lt. Middle temporal gyrus, Lt. Frontal sub-gyral and Rt. Tuber(cerebellum) in group average as well as more than half of the subjects.

• 한국정보통신학회논문지
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• 제17권11호
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• pp.2621-2626
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• 2013

비대칭 이중게이트 MOSFET의 전위분포에 대하여 고찰하였으며 이를 위하여 포아송방정식의 해석학적 해를 구하였다. 대칭 DGMOSFET는 3단자 소자로서 상하단의 게이트단자가 상호 연결되어 있어 상하단 동일한 제어능력을 가지고 있으나 비대칭 DGMOSFET 소자는 4단자 소자로서 상하단 게이트단자의 전류제어능력을 각각 설정할 수 있다는 장점이 있다. 전위분포를 구할 때 포아송방정식을 이용하였으며 도핑분포함수에 가우시안 함수를 적용함으로써 보다 실험값에 근사하게 해석하였다. 비대칭 이중게이트 MOSFET의 게이트 단자전압 및 게이트 산화막 두께 그리고 채널도핑의 변화에 따라 전위분포의 변화를 관찰하였다. 비대칭 DGMOSFET의 전위분포를 관찰한 결과, 게이트단자 전압 및 게이트 산화막 두께 등에 따라 전위분포는 크게 변화하는 것을 알 수 있었다. 특히 게이트 산화막 두께가 증가하는 단자에서 전위분포의 변화가 더욱 크게 나타나고 있었으며 채널도핑이 증가하면 드레인 측보다 소스 측 전위분포가 크게 변화하는 것을 알 수 있었다.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2013년도 추계학술대회
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• pp.691-694
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• 2013

비대칭 이중게이트 MOSFET의 전위분포에 대하여 고찰하였으며 이를 위하여 포아송방정식의 해석학적 해를 구하였다. 대칭 DGMOSFET는 3단자 소자로서 상하단의 게이트단자가 상호 연결되어 있어 상하단 동일한 제어능력을 가지고 있으나 비대칭 DGMOSFET 소자는 4단자 소자로서 상하단 게이트단자의 전류제어능력을 각각 설정할 수 있다는 장점이 있다. 전위분포를 구할 때 포아송방정식을 이용하였으며 전하분포함수에 가우시안 함수를 적용함으로써 보다 실험값에 근사하게 해석하였다. 비대칭 이중게이트 MOSFET의 게이트 단자전압 및 게이트 산화막 두께 그리고 채널도핑의 변화에 따라 전위분포의 변화를 관찰하였다. 비대칭 DGMOSFET의 전위분포를 관찰한 결과, 게이트단자 전압 및 게이트 산화막 두께 등에 따라 전위분포는 크게 변화하는 것을 알 수 있었다. 특히 게이트 산화막 두께가 증가하는 단자에서 전위분포의 변화가 더욱 크게 나타나고 있었으며 채널도핑이 증가하면 드레인 측보다 소스 측 전위분포가 크게 변화하는 것을 알 수 있었다.

• 한국재료학회지
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• 제16권9호
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• pp.571-577
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• 2006

We fabricated thermal evaporated 10 nm-Ni/(poly)Si and 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the thermal stability of nickel monosilicide at the elevated temperatures by rapid annealing them at the temperatures of $300{\sim}1200^{\circ}C$ for 40 seconds. Silicides for salicide process was formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester is used for sheet resistance. Scanning electron microscope and field ion beam were employed for thickness and microstructure evolution characterization. An x-ray diffractometer and an auger depth profile scope were used for phase and composition analysis, respectively. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates showed low resistance up to $1200^{\circ}C$ and $800^{\circ}C$, respectively, while the conventional nickel monosilicide showed low resistance below $700^{\circ}C$. The grain boundary diffusion and agglomeration of silicides led to lower the NiSi stable temperature with polycrystalline silicon substrates. Our result implies that our newly proposed Ir added NiSi process may widen the thermal process window for nano CMOS process.

• 전자공학회논문지A
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• 제31A권1호
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• pp.39-47
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• 1994

The drain current reduction effect due to the side-gating phenomena resulted from interaction between the neighbor gates is lead to degradation of circuit performance. In this paper, these effect were modelized for circuit simulation with the shift of threshold voltage resulting from negative charge formation and the analysis of substrate leakage current resulting trapping effect. To remove dificiencies of the conventional three terminal structure, these model were implemented in SPICE with the four terminal structure, and then the constructed environment enables the simulation of circuit performance degradation resulted from side-gating effect. The validity of implemented model is proved by comparisoin with experiment data.

• 한국환경과학회지
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• 제18권9호
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• pp.971-981
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• 2009

An objective of this study is as follows: 1) performing sensitivity analysis and parameter estimation of RMA2 and RMA4 models for the West-Nakdong River, 2) drawing up alternatives of gates-operation for water-quality enhancement, and 3) quantitative evaluation of methodology of 'flow-restoration by gates-operation' among 'Comprehensive Plan Improving Water-Quality in the West-Nakdong River(WNR)' with the target water-quality(BOD at Nakbon-N point: below 4.3 mg/L). The parameters for the RMA2 (depth-averaged two-dimensional flow model) and RMA4 (depth-averaged two-dimensional water-quality model) were determined by sensitivity analysis. Result of parameter estimation for RMA2 and RMA4 models is $1,000\;Pa{\cdot}s$ of the eddy viscosity, 20 of the Peclet number, 0.025 of the Manning coefficient, and $1.0\;m^2/s$ of the diffusion coefficient. We have evaluated the effects of water-quality enhancement of the selected alternatives by numerical simulation technique with the models under the steady-state flow condition and the time-variant transport condition. Because of no-resuspension from river bottom and considering BOD as conservative matter, these simulation results slightly differ from real phenomena. In the case of $50\;m^3/s$ of Daejeo-gate inflow, two-dimensional flow pn results result represents that small velocity occurs in the Pyungkang Stream and no flow in the Maekdo River. In the WNR, there occurs the most rapid flow near timhae-bridge. In the WNR, changes of water-quality for the four selected simulation cases(6, 10, 30, $50\;m^3/s$ of the Daejeo-gate inflow) were predicted. Since the Daejeo-Gate and the Noksan-Gate can be opened up to 7 days, it would be found that sustainable inflow of $30\;m^3/s$ at the Daejeo-gate makes BOD in the WNR to be under the target of water-quality.

• 한국재료학회지
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• 제17권4호
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• pp.207-214
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• 2007

We fabricated thermally-evaporated 10 -Ni/(poly)Si and 10 -Ni/1 -Ir/(poly)Si structures to investigate the microstructure of nickel monosilicide at the elevated temperatures required for annealing. Silicides underwent rapid at the temperatures of 300-1200 for 40 seconds. Silicides suitable for the salicide process formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope(TEM) and an Auger depth profile scope were employed for the determination of vertical section structure and thickness. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates shoed low resistance up to 1000 and 800, respectively, while the conventional nickle monosilicide showed low resistance below 700. Through TEM analysis, we confirmed that a uniform, 20 -thick silicide layer formed on the single-crystal silicon substrate for the Ir-inserted case while a non-uniform, agglomerated layer was observed for the conventional nickel silicide. On the polycrystalline silicon substrate, we confirmed that the conventional nickel silicide showed a unique silicon-silicide mixing at the high silicidation temperature of 1000. Auger depth profile analysis also supports the presence of thismixed microstructure. Our result implies that our newly proposed iridium-added NiSi process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.

• 마이크로전자및패키징학회지
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• 제12권2호
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• pp.149-154
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• 2005

궁극적으로 게이트를 저저항 복합 실리사이드로 대체하는 가능성을 확인하기 위해 70 nm 두께의 폴리실리콘 위에 각 20nm의 Ni, Co를 열증착기로 적층순서를 달리하여 poly/Ni/Co, poly/Co/Ni구조를 만들었다. 쾌속열처리기를 이용하여 실리사이드화 열처리를 40초간 $700{\~}1100^{\circ}C$ 범위에서 실시하였다. 복합 실리사이드의 온도별 전기저항변화, 두께변화, 표면조도변화를 각각 사점전기저항측정기와 광발산주사전자현미경, 주사탐침현미경으로 확인하였다. 적층순서와 관계없이 폴리실리콘으로부터 제조된 복합실리사이드는 $800^{\circ}C$ 이상부터 급격한 고저항을 보이고, 두께도 급격히 얇아졌다. 두께의 감소는 기존의 단결정에서는 없던 현상으로 폴리실리콘의 두께가 한정된 경우 금속성분의 inversion 현상이 커서 폴리실리콘이 오히려 실리사이드 상부에 위치하여 제거되기 때문이라고 생각되었고 $1000^{\circ}C$ 이상에서는 실리사이드가 형성되지 못하였다. 이러한 결과는 나노급 두께의 게이트를 저저항 실리사이드로 만 들기 위해서는 inversion과 두께감소를 고려하여야 함을 의미하였다.

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.308-317
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• 2007

We fabricated thermally-evaporated 10 nm-Ni/(poly)Si and 10 nm-$Ni_{0.5}Co_{0.5}$/(Poly)Si structures to investigate the microstructure of nickel silicides at the elevated temperatures required lot annealing. Silicides underwent rapid annealing at the temperatures of $600{\sim}1100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope and an Auger depth profilescope were employed for the determination of vortical microstructure and thickness. Nickel silicides with cobalt on single crystal silicon actives and polycrystalline silicon gates showed low resistance up to $1100^{\circ}C$ and $900^{\circ}C$, respectively, while the conventional nickle monosilicide showed low resistance below $700^{\circ}C$. Through TEM analysis, we confirmed that a uniform, $10{\sim}15 nm$-thick silicide layer formed on the single-crystal silicon substrate for the Co-alloyed case while a non-uniform, agglomerated layer was observed for the conventional nickel silicide. On the polycrystalline silicon substrate, we confirmed that the conventional nickel silicide showed a unique silicon-silicide mixing at the high silicidation temperature of $1000^{\circ}C$. Auger depth profile analysis also supports the presence of this mixed microstructure. Our result implies that our newly proposed NiCo-alloy composite silicide process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.

• 비교문화연구
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• 제21권
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• pp.213-254
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• 2010

The goal of this thesis is to make a comparative study about the variant form of the Chinese character in the five sorts of old maps drawing outside of the main gates of old map including DeDongYei-jido. The main task of this thesis can be classified under three heads - (1) introducing the literature of comparative study in the five sorts of old maps including DeDongYei-jido (2) classification of variant form in the five sorts of old maps (3) characteristic of variant form in the five sorts of old maps. In this thesis, aspect of variant form is classified under six head - (1) variation of the whole shape of the character (2) taking place the variation in both sides of Chinese character (3) taking place the variation in part (4) taking place variation in the strokes of the Chinese character (5) misusing different characters (6) changing different characters. This thesis explains some characteristic of variant form - (1) simplification of the shape of characters (2) using the Hou-qi-zi(後起字, Chinese character which is actually the same but made the next) (3) replacing the overlapped both sides of Chinese character with omit mark (4) a wrongly written character (5) discovering the variant form such as variant form of 廣, 广 variant form of 廛, variant form of 院 which was not recorded in Chinese literature. From now on, there should be some collections of variant form of Korean style and study. we are going to have to standardize aspect of variation and rule of variant form in old maps until we have to make some ways to recognize the block letter.