• Laser Solutions
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• v.17 no.1
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• pp.1-6
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• 2014

Indium tin oxide (ITO) is an important transparent conducting oxide (TCO). ITO films have been widely used as transparent electrodes in optoelectronic devices such as organic light-emitting devices (OLED) because of their high electrical conductivity and high transmission in the visible wavelength. Finding ways to control ITO micromachining depth is important role in the fabrication and assembly of display field. This study presented the depth control of ITO patterns on glass substrate using a femtosecond laser and slit. In the proposed approach, a gaussian beam was transformed into a quasi-flat top beam by slit. In addition, pattern of square type shaped by slit were fabricated on the surfaces of ITO films using femtosecond laser pulse irradiation, under 1030nm, single pulse. Using femtosecond laser and slit, we selectively controlled forming depth and removed the ITO thin films with thickness 145nm on glass substrates. In particular, we studied the effect of pulse number on the ablation of ITO. Clean removal of the ITO layer was observed when the 6 pulse number at $2.8TW/cm^2$. Furthermore, the morphologies and fabricated depth were characterized using a optical microscope, atomic force microscope (AFM), and energy dispersive X-ray spectroscopy (EDS).

• Journal of Surface Science and Engineering
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• v.45 no.6
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• pp.257-263
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• 2012

CrN/AlN multilayer coatings with various bilayer periods in the range of 1.8 to 7.4 nm were synthesized using a closed-field unbalanced magnetron sputtering method. Their crystalline structure, chemical compositions and mechanical properties have been investigated with Auger electron spectroscopy, X-ray diffractometry, atomic force microscopy, nanoindentation, scratch tests. The properties of the multilayer coatings varied strongly depending upon the magnitude of the bilayer period. The multilayer coating with a bilayer period of 1.8 nm showed the maximum hardness and an elastic modulus of approximately 37.6 and 417 GPa, respectively, which was 1.54 times higher than the hardness predicted by the rule of mixture from the CrN and AlN coatings. The hardness of the multilayer coating increased as the bilayer period decreased, i.e. as the rotation speed increased. The Hall-Petch type relationship, hardness being related to (1/periodicity)$^{-1/2}$, suggested by Lehoczky was confirmed for the CrN/AlN multilayer coatings with bilayer period close to the 5-10 nm range. With decreasing bilayer period, the surface morphology of the films became rougher and the critical load of films for adhesion strength gradually decreased.

• Korean Journal of Materials Research
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• v.24 no.3
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• pp.145-151
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• 2014

Solution-based Sb-doped $SnO_2$ (ATO) transparent conductive oxides using a low-temperature process were fabricated by an electrospray technique followed by spin coating. We demonstrated their structural, chemical, morphological, electrical, and optical properties by means of X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, atomic force microscopy, Hall effect measurement system, and UV-Vis spectrophotometry. In order to investigate optimum electrical and optical properties at low-temperature annealing, we systemically coated two layer, four layer, and six layers of ATO sol-solution using spin-coating on the electrosprayed ATO thin films. The resistivity and optical transmittance of the ATO thin films decreased as the thickness of ATO sol-layer increased. Then, the ATO thin films with two sol-layers exhibited superb figure of merit compared to the other samples. The performance improvement in a low temperature process ($300^{\circ}C$) can be explained by the effect of enhanced carrier concentration due to the improved densification of the ATO thin films causing the optimum sol-layer coating. Therefore, the solution-based ATO thin films prepared at $300^{\circ}C$C exhibited the superb electrical (${\sim}7.25{\times}10^{-3}{\Omega}{\cdot}cm$) and optical transmittance (~83.1 %) performances.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.552-552
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• 2013

In our study we consider Al2O3 ceramic substrates for Plasma Surface Treatments in order to improve deposited diamond surface and increase diamond deposition rate by applying DBD (Dielectric Barrier Dischrge) system. Because Plasma Surface Treatments was used as a modification method of material surface properties like surface free energy, wettability, and adhesion. By applying Plasma Surface Treatments diamond films are deposited on the Al2O3 ceramic substrates. DC Arc Plasmatron with mathane and hydrogen gases is used. Deposited diamond films are investigated by SEM (Scanning Electron Microscopy), AFM (Atomic Force Microscopy) and XRD (X-ray Diffractometer). Then the C-H stretching of synthetic diamond films by FTIR (Fourier Transform Infrared Spectroscopy) is studied. As a result, nanocrystalline diamond films were identified by using SEM and diamond properties in XRD peaks at (111, $43.8{\Box}$, (220, $75.3{\Box}$ and (311, $90.4{\Box}$ were shown. Absorption peaks in FTIR spectrum, caused by CHx sp3 bond stretching of CVD diamond films, were identified as well. Finally, we improved such parameters as depostion rate ($2.3{\mu}m$/h), diamond surface uniformity, and impurities level by applying Plasma Surface Treatments. These experimental results show the importance of Plasma Surface Treatments for diamond deposition by a plasma source.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.322-322
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• 2013

최근 전자제품들의 소형화, 경량화, 다기능화가 활발히 진행됨에 따라, 고성능의 고출력용 인쇄회로기판(PCB)의 개발이 요구되고 있다. PCB는 전자제품의 각 부품을 전기적으로 연결하는 통로로서 전자제품의 소형화, 다기능화에 따라 고집적화가 요구되고 있다. 하지만 모든 전자장비의 고장의 85% 정도가 발열에 의한 것으로, PCB의 고집적화에 따른 발열문제가 매우 중요한 이슈가 되고 있다. 최근에는 이러한 문제점을 해결하기 위해 PCB의 방열층으로 양극 산화막을 금속 기판 위에 형성하고 이 절연층 위에 금속층을 회로로서 형성하는 방열 PCB 기판에 대한 연구가 활발히 진행되고 있다. 최근까지, 금속층 회로 형성을 위해 무전해 Ni 도금에 대한 연구가 활발히 이루어져 왔다. 하지만 주로 화학적, 전기화학적 관점에서 많은 연구자들에 의해 조사 연구되어 왔다. 본 실험에서는 anodized Al 절연층 위의 회로전극 부분으로 스크린 방법으로 Ag paste를 패턴 인쇄한 뒤, 무전해도금 방식으로 저렴한 Ni 전면 회로전극을 형성하여 전기전도도를 높이고, 저항을 낮출 수 있는 회로로서 기판의 손상을 최소화하고 선택적으로 Ag 패턴에만 Ni 전극회로를 형성시키는 것을 목표로 연구하였다. Ni-B 무전해 도금시 도금조의 온도는 $65^{\circ}C$, 무전해 도금액의 pH는 ~7 (중성)로 유지하였다. Al2O3 기판을 이용한 Ag Paste 패턴 위에 증착된 Ni-B 박막의 특성을 분석하기 위해 X-ray diffraction (XRD), AFM (Atomic Force Microscopy), SEM (Scanning Electron Microscope), XPS (X-ray Photoelectron Spectroscopy)을 이용하여 Ni-B 박막의 특성을 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.630-630
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• 2013

Recently, atomically smooth hexagonal boron nitride(h-BN) known as a white graphene has drawn great attention since the discovery of graphene. h-BN is a III-V compound and has a honeycomb structure very similar to graphene with smaller lattice mismatch. Because of strong covalent sp2bonds like graphene, h-BN provides a high thermal conductivity and mechanical strength as well as chemical stability of h-BN superior to graphene. While graphene has a high electrical conductivity, h-BN has a highly dielectric property as an insulator with optical band gap up to 6eV. Similar to the graphene, h-BN can be applied to a variety of field, such as gate dielectric layers/substrate, ultraviolet emitter, transparent membrane, and protective coatings. However, up until recently, obtaining and controlling good quality monolayer h-BN layers have been too difficult and challenging. In this work, we investigate the controlled synthesis of h-BN layers according to the growth condition, time, temperature, and gas partial pressure. h-BN is obtained by using chemical vapor deposition on Cu foil with ammonia borane (BH3NH3) as a source for h-BN. Scanning Transmission Electron Microscopy (STEM, JEOL-JEM-ARM200F) is used for imaging and structural analysis of h-BN layer. Sample's surface morphology is characterized by Field emission scanning electron microscopy (SEM, JEOL JSM-7100F). h-BN is analyzed by Raman spectroscopy (HORIBA, ARAMIS) and its topographic variations by Atomic force microscopy (AFM, Park Systems XE-100).

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.85-99
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• 1998

A ultrahigh vacuum chemical vapor deposition(UHVCVD)/metalorganic chemical vapor deposition(MOMBE) system equipped with a radio frequency(RF)-plasma cell was employed to grow GaN layer on the sapphire at a low temperature. The x-ray photoelectron spectroscopy analysis of nitrogen composition on the nitridated sapphite surface indicated that a nitridation process is mostly affected by the RF power at low temperature. Atomic force microscope images of nitridated surface the protrusion density on the nitridated sapphire is dependent on the nitridation temperature. The crystallinity of GaN grown at $450^{\circ}C$ was found to be much improved when the sapphire was nitridated at low temperature prior to the GaN layer growth. Moreover, a strong photoluminescence spectrum of GaN grown by UHVCVD/MOMBE with a rf-nitrogen plasma was observed for the first time at room temperature.

• Journal of Periodontal and Implant Science
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• v.43 no.4
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• pp.198-205
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• 2013

Purpose: The aim of this study was to evaluate the surface properties and biological response of an anodized titanium surface by cell proliferation and alkaline phosphatase activity analysis. Methods: Commercial pure titanium (Ti) disks were prepared. The samples were divided into an untreated machined Ti group and anodized Ti group. The anodization of cp-Ti was formed using a constant voltage of 270 V for 60 seconds. The surface properties were evaluated using scanning electron microscopy, X-ray photoelectron spectroscopy, and an image analyzing microscope. The surface roughness was evaluated by atomic force microscopy and a profilometer. The contact angle and surface energy were analyzed. Cell adhesion, cell proliferation, and alkaline phosphatase activity were evaluated using mouse $MC_3T_3-E_1$ cells. Results: The anodized Ti group had a more porous and thicker layer on its surface. The surface roughness of the two groups measured by the profilometer showed no significant difference (P>0.001). The anodized Ti dioxide ($TiO_2$) surface exhibited better corrosion resistance and showed a significantly lower contact angle than the machined Ti surface (P>0.001). Although there was no significant difference in the cell viability between the two groups (P>0.001), the anodized $TiO_2$ surface showed significantly enhanced alkaline phosphatase activity (P<0.001). Conclusions: These results suggest that the surface modification of Ti by anodic oxidation improved the osteogenic response of the osteoblast cells.

• Carbon letters
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• v.21
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• pp.16-22
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• 2017

Cobalt was electrodeposited onto chemical vapor deposition (CVD) graphene/Si/$SiO_2$ substrates, during different time intervals, using an electrolyte solution containing a low concentration of cobalt sulfate. The intention was to investigate the details of the deposition process (and the dissolution process) and the resulting magnetic properties of the Co deposits on graphene. During and after electrodeposition, in-situ magnetic measurements were performed using an (AGFM). These were followed by ex situ morphological analysis of the samples with ${\Delta}t_{DEP}$ 30 and 100 s by atomic force microscopy in the non-contact mode on pristine CVD graphene/$SiO_2$/Si. We demonstrate that it is possible to electrodeposit Co onto graphene, and that in-situ magnetic measurements can also help in understanding details of the deposition process itself. The results show that the Co deposits are ferromagnetic with decreasing coercivity ($H_C$) and demonstrate increasing magnetization on saturation ($M_{SAT}$) and electric signal proportional to remanence ($M_r$), as a function of the amount of the electrodeposited Co. It was also found that, after the end of the dissolution process, a certain amount of cobalt remains on the graphene in oxide form (this was confirmed by X-ray photoelectron spectroscopy), as suggested by the magnetic measurements. This oxide tends to exhibit a limited asymptotic amount when cycling through the deposition/dissolution process for increasing deposition times, possibly indicating that the oxidation process is similar to the graphene surface chemistry.

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.6
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• pp.216-219
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• 2003

A new class of carbosiloxane dendrimer (G4-48PyP) terminated with 4-pyridylpropano I was synthesized and its possible application to functional thin films was examined through metal complexation and Langmuir-Blodgett (LB) technique. The highly concentrated periphery pyridyl groups of G4-48PyP were exposed on aq. aluminum ions at the air-water interface. The monolayers showed stability up to ca. 50 mN/m of surface pressure. When the subphase became acidic or alkaline, the monolayers changed to condensed phase. The presence of aluminum ions also caused reduction of the molecular area. The macroscopic images of the monolayers were monitored by Brewster angle microscopy (BAM) and only the images of dendrimer aggregates could be observed after the monolayer collapse. The surface images of the monolayer LB film were scanned by atomic force microscopy (AFM). The convex structures of single and aggregate molecules were directly observed. The structures of Langmuir-Blodgett (LB) films were characterized by FT-IR, UV-Vis, and X-ray photoelectron spectroscopy (XPS). The UV-Vis spectrum of the aluminum ion-complexed LB film showed additional band around 670nm, which was not found in the spectra of dendrimer itself or aq. aluminum ions. XPS spectra also supported the incorporation of aluminum ions into the LB films.