• Title/Summary/Keyword: force spectroscopy

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Recovery of Etching Damage of Etched PZT Thin Film by Inductively Coupled Plasma (유도결합 플라즈마에 의해 식각된 PZT 박막의 식각 Damage 개선)

  • 강명구;김경태;김창일
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.7
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    • pp.551-556
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    • 2001
  • In this work, the recovery of etching damage in the etched PZT thin film with $O_2$ annealing has been studied. The PZT thin films were etched as a function of Cl$_2$/Ar and additive CF$_4$ into Cl$_2$(80%) /Ar(20%). the etch rates of PZT thin films were 1600$\AA$/min at Cl$_2$(80%)/Ar(20%) and 1970 $\AA$/min at 30% additive Cf$_4$ into Cl$_2$(80%)/Ar(20%). In order to recover the characteristics of etched PZT thin films, the etched PZT thin films were annealed in $O_2$ atmosphere at various temperatures. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ annealing process. The improvement of ferroelectric behavior is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensities of Pb-O, Zr-O and Ti-O peak increase and the chemical residue peak is reduced by $O_2$ annealing. From the atomic force microscopy (AFM) images. it shows that the surface morphology of re-annealed PZT thin films after etching is improved.

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Physical Characteristics of 3C-SiC Thin-films Grown on Si(100) Wafer (Si(100) 기판 위에 성장돈 3C-SiC 박막의 물리적 특성)

  • ;;Shigehiro Nishino
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.11
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    • pp.953-957
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    • 2002
  • Single crystal 3C-SiC (cubic silicon carbide) thin-films were deposited on Si(100) wafer up to the thickness of 4.3 ${\mu}{\textrm}{m}$ by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane; {CH$_{3}$$_{6}$ Si$_{2}$) at 135$0^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC film was 4.3 ${\mu}{\textrm}{m}$/hr. The 3C-SiC epitaxial film grown on Si(100) wafer was characterized by XRD (X-ray diffraction), AFM (atomic force microscopy), RHEED (reflection high energy electron diffraction), XPS (X-ray photoelecron spectroscopy), and Raman scattering, respectively. Two distinct phonon modes of TO (transverse optical) near 796 $cm^{-1}$ / and LO (longitudinal optical) near 974$\pm$1 $cm^{-1}$ / of 3C-SiC were observed by Raman scattering measurement. The heteroepitaxially grown film was identified as the single crystal 3C-SiC phase by XRD spectra (2$\theta$=41.5。).).

A Study on Pre-bonding of 3C-SiC Wafers using CVD Oxide (CVD 절연막을 이용한 3C-SiC 기판의 초기직접접합에 관한 연구)

  • ;;Shigehiro Nishino
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.10
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    • pp.883-888
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    • 2002
  • SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECYD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of 5.3 kgf/cm$^2$to 15.5 kgf/cm$^2$.

Space Charge Effect on Grain Growth Kinetics of Tetragonal Zirconia Polycrystal

  • Chon, Uong
    • The Korean Journal of Ceramics
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    • v.5 no.1
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    • pp.1-11
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    • 1999
  • The effect of aliovalent dopents, $Nb_3O_5$ and MnO, on the grain growth kinetics of 12 mol% ceria stabilized tetragonal zirconia polycrystals (Ce-TZP) was studied. All specimens were sintered at $1550^{\circ}C$ for 20 minutes prior to annealing at different temperatures to study grain growth kinetics. Grain growth kinetics of Ce-TZP and 1 mol% $Nb_2O_5$ doped Ce-TZP (Ce-TZP/$Nb_3O_5$) during annealing at 1475, 1550, and $1600^{\circ}C$ adequately matched with square law $(D^2-D_\;o^2=k_at)$. However, grain growth in 1 mol% MnO suppressed grain growth in Ce-TZP by drag force exerted by $Mn^{+2}$ ions which segregated strongly to the positively-charged grain boundaries of Ce-TZP, $Nb_2O_5$ enhanced grain growth by increasing the concentration of vacancies of $Zr^{+4}$ ion and $Ce^{+4}$ ions. Surface analysis with X-ray photoelectron spectroscopy (XPS) showed the segregation of Mn+2 ions to grain boundaries. The kinetics of grain growth obtained in the base Ce-TZP and the Ce-TZPs with the aliovalent dopants were examined in the context of impurity drag effect and space charge effect.

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Effect of O2 Partial Pressure on AlOx Thin Films Prepared by Reactive Ion Beam Sputtering Deposition

  • Seong, Jin-Wook;Yoon, Ki-Hyun;Kim, Ki-Hwan;Beag, Young-Whoan;Koh, Seok-Keun
    • Journal of the Korean Ceramic Society
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    • v.41 no.5
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    • pp.364-369
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    • 2004
  • The barrier and optical properties of AlO$_{x}$ thin films on polycarbonate deposited by Reactive Ion Beam Sputtering (RIBS) were investigated at different oxygen partial pressure. We measured the deposition rate of AlO$_{x}$ thin films. As the oxygen partial pres-sure increased, the deposition rate increased then decreased. The changes of deposition rate are associated with the properties of deposited films. The properties of deposited AlO$_{x}$ thin films were studied using X-ray Photoelectron Spectroscopy (XPS), Scan-ning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM). Optimum deposition parameters were found for fabricat-ing aluminum oxide thin films with high optical transparency for visible light and low Oxygen Transmission Rate (OTR). The optical transmittance of AlO$_{x}$ thin film deposited on polycarbonate (PC) showed the same value of bare PC.bare PC.

Effect of Physicochemical Properties of Solvents on Microstructure of Conducting Polymer Film for Non-Volatile Polymer Memory

  • Paik, Un-Gyu;Lee, Sang-Kyu;Park, Jea-Gun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.1
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    • pp.46-50
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    • 2008
  • The effect of physicochemical properties of solvents on the microstructure of polyvinyl carbazole (PVK) film for non-volatile polymer memory was investigated. For the solubilization of PVK molecules and the preparation of PVK films, four solvents with different physicochemical properties of the Hildebrand solubility parameter and vapor pressure were considered: chloroform, tetrahydrofuran (THF), 1,1,2,2-tetrachloroethane (TCE), and N,N-dimehtylformamide (DMF). The solubility of PVK molecules in the solvents was observed by ultravioletvisible spectroscopy. PVK molecules were observed to be more soluble in chloroform, with a low Hildebrand solubility parameter, than solvents with higher values. The aggregated size and micro-/nano-topographical properties of PVK films were characterized using optical and atomic force microscopes. The PVK film cast from chloroform exhibited enhanced surface roughness compared to that from TCE and DMF. It was also confirmed that the microstructure of PVK film has an effect on the performance of non-volatile polymer memory.

Theoretical and Experimental Studies on the Adsorption of N-[(E)-Pyridin-2-ylmethylidene] Aniline, a Schiff Base, on Mild Steel Surface in Acid Media

  • N, Mohanapriya.;M, Kumaravel.;B, Lalithamani.
    • Journal of Electrochemical Science and Technology
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    • v.11 no.2
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    • pp.117-131
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    • 2020
  • The adsorption of N-[(E)-Pyridin-2-ylmethylidene] aniline, a Schiff base, on to mild steel surface in 1M HCl and 0.5 M H2SO4 solutions and the consequent corrosion protection were studied employing weight loss method, electrochemical impedance spectroscopy and potentiodynamic polarization measurements. DFT calculations were performed to investigate its interaction with the metal surface at the atomic level to understand its inhibition mechanism. The adsorption process is well described by the Langmuir isotherm. The thermodynamic parameters indicated that the adsorption is spontaneous and the interaction of the inhibitor at the mild steel surface is mainly through physisorption. The Ra values obtained in AFM studies for the uninhibited and inhibited sample in HCl media respectively are 0.756 and 0.559 ㎛, and that in H2SO4 media are 0.411 and 0.406 ㎛. The lesser roughness values of the inhibited sample shows the adsorption of the molecules onto the mild surface. The inhibition efficiencies were found to improve with concentration of the inhibitor and the maximum efficiency was observed at 400ppm in all the investigation methods adopted. The inhibitor was found to exhibit a higher efficiency in HCl media (95.7%) than in H2SO4 (92.8%). The theoretical and experimental results are found to be in good agreement.

Synthesis, Self-assembly, and Catalytic Activity of 1H-Imidazole Amphiphiles

  • Park, Jun-Ha;Kim, Min-Soo;Seo, Sang-Hyuk;Chang, Ji-Young
    • Bulletin of the Korean Chemical Society
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    • v.32 no.7
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    • pp.2193-2198
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    • 2011
  • We prepared polycatenar 1H-imidazole amphiphiles having a structure in which a 1H-imidazole head was connected through a benzene ring to a pheny group having two or three oligo(ethylene glycol) chains and studied their supramolecular assembly by fluorescence spectroscopy, transmission electron microscopy (TEM) and atomic force microscopy (AFM). When the aqueous solutions of the amphiphiles ($5{\times}10^{-5}M{\sim}10^{-3}M$) were deposited onto a carbon-coated copper grid and dried, twisted structures with diameters of ~200-300 nm were imaged by TEM and AFM. We presume that the structures comprised a chain of the amphiphile dimers formed via successive hydrogen bonding between the 1H of the imidazole group and 3N of the neighboring one. In a solution of pH 4, entangled fibers with diameters of several nanometers were observed by TEM. In a pH 10 solution, film-like aggregates formed exclusively. The 1H-imidazole amphiphiles hydrolyzed tetraethoxysilane to induce gelation to form fibrous and spherical silica structures at neutral pH in aqueous solutions. No silica was formed when imidazole was used instead of the amphiphiles, suggesting that the selfassembled aggregates of the amphiphiles were responsible for the gelation.

Characteristics of Barium Hexaferrite Nanoparticles Prepared by Temperature-Controlled Chemical Coprecipitation

  • Kwak, Jun-Young;Lee, Choong-Sub;Kim, Don;Kim, Yeong-Il
    • Journal of the Korean Chemical Society
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    • v.56 no.5
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    • pp.609-616
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    • 2012
  • Ba-ferrite ($BaFe_{12}O_{19}$) nanoparticles were synthesized by chemical coprecipitation method in an aqueous solution. The particle size and the crystallization temperature of the Ba-ferrite nanoparticles were controlled varying the precipitation temperature. The precipitate that was prepared at $0^{\circ}C$ showed the crystal structure of Ba-ferrite in X-ray diffraction when it was calcined at the temperature above $580^{\circ}C$, whereas what was prepared at $50^{\circ}C$ showed the crystallinity when it was calcined at the temperature higher than about $700^{\circ}C$. The particle sizes of the synthesized Ba-ferrite were in a range of about 20-30 nm when it was prepared by being precipitated at $0^{\circ}C$ and calcined at $650^{\circ}C$. When the precipitation temperature increased, the particle size also increased even at the same calcination temperature. The magnetic properties of the Ba-ferrite nanoparticles were also controlled by the synthetic condition of precipitation and calcination temperature. The coercive force could be appreciably lowered without a loss of saturation magnetization when the Ba-ferrite nanoparticles were prepared by precipitation and calcination both at low temperatures.

Adsorption Property of Silicone Rubber Sticking Chuck for OLED Glass Substrate

  • Kim, Jin-Hee;Chung, Kyung-Ho
    • Elastomers and Composites
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    • v.50 no.1
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    • pp.55-61
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    • 2015
  • Manufacturing process of OLED contains adsorption-desorption process of glass substrate. There are several adsorption methods of glass substrate such as atmospheric pressure, vacuum and electrostatic adsorption. However, these methods are very complex to connect system. Therefore, the adsorption method using silicone rubber based sticking chuck was proposed in this study. Three types of silicone rubbers having 0, 19.3 and 32.2 wt% of fluorine were used and their mechanical properties, surface energies and adsorption properties were examined. According to the results ${\sigma}_{300}$ and hardness increased with increasing fluorine contents, but elongation was decreased. Also, fluorosilicone rubber containing 32.2 wt% of fluorine showed the lowest surface tension, among three types of rubber and resulted in the highest initial tack with glass substrate. After the adsorption-desorption test of 300,000 cycles was performed, the adsorption force of S-1 (silicone rubber) decreased largely from 2.34 to 0.73 MPa. However, the S-3 (fluorosilicone rubber having 32.2 wt%. of fluorine) decreased only from 3.15 to 2.24 MPa. From this study, we obtained the valuable equations related to long term durability of silicone based sticking chuck. Finally the transfer of silicone rubber to glass substrate with the adsorption-desorption process was not occurred and this phenomenon was examined by UV-Visible spectroscopy.