• 한국공작기계학회논문집
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• 제16권2호
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• pp.70-77
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• 2007

The application of focused ion beam(FIB) technology has been broadened in the fabrication of nanoscale regime. The extended application of FIB is dependent on complicated reciprocal relation of operating parameters. It is necessary for successful and efficient modifications on the surface of silicon substrate. The primary effect by Gaussian beam intensity is significantly shown from various aperture size, accelerating voltage, and beam current. Also, the secondary effect of other process factors - dwell time, pixel interval, scan mode, and pattern size has affected to etching results. For the process analysis, influence of the secondary factors on FIB micromilling process is examined with respect to sputtering depth during the milling process in silicon material. The results are analyzed by the ratio of signal to noise obtained using design of experiment in each parameter.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.322-325
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• 2005

The shrinking critical dimensions of modern technology place a heavy requirement on optimizing feature shapes at the micro- and nano scale. In addition, the use of ion beams in the nano-scale world is greatly increased by technology development. Especially, Focused ion Beam (FIB) has a great potential to fabricate the device in nano-scale. Nevertheless, FIB has several limitations, surface swelling in low ion dose regime, precipitation of incident ions, and the re-deposition effect due to the sputtered atoms. In recent years, many approaches and research results show that the re-deposition effect is the most outstanding effect to overcome or reduce in fabrication of micro and nano devices. A 2D string based simulation software AMADEUS-2D $(\underline{A}dvanced\;\underline{M}odeling\;and\;\underline{D}esign\;\underline{E}nvironment\;for\;\underline{S}putter\;Processes)$ for ion milling and FIB direct fabrication has been developed. It is capable of simulating ion beam sputtering and re-deposition. In this paper, the 2D FIB simulation is demonstrated and the characteristics of ion beam induced direct fabrication is analyzed according to various parameters. Several examples, single pixel, multi scan box region, and re-deposited sidewall formation, are given.

• 대한기계학회논문집A
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• 제32권3호
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• pp.209-216
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• 2008

The application of focused ion beam (FIB) depends on the optimal interaction of the operation parameters between operating parameters which control beam and samples on the stage during the FIB deposition process. This deposition process was investigated systematically in C precursor gas. Under the fine beam conditions (30kV, 40nm beam size, etc), the effect of considered process parameters - dwell time, beam overlap, incident beam angle to tilted surface, minimum frame time and pattern size were investigated from deposition results by the design of experiment. For the process analysis, influence of the parameters on FIB-CVD process was examined with respect to dimensions and constructed shapes of single and multi- patterns. Throughout the single patterning process, optimal conditions were selected. Multi-patterning deposition were presented to show the effect of on-stage parameters. The analysis have provided the sequent beam scan method and the aspect-ratio had the most significant influence for the multi-patterning deposition in the FIB processing. The bitmapped scan method was more efficient than the one-by-one scan type method for obtaining high aspect-ratio (Width/Height > 1) patterns.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.636-639
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• 2003

It is difficult to machine below 10 micrometers by conventional machining methods, such as micro-EDM. However, ultra micro machining using focused ion beam(FIB) is able to machine to 50 nanometers. In addition, 3 dimensional structures can be made by a combination of FIB and CVD to the level of 10 nanometers. Die ＆ moulds techniques are better than one-to-one machining techniques in the mass production of ultra size structures, in regards to production costs. In this case, the machining precision of die ＆ moulds affects produced parts. Also, it is advantageous to machine die ＆ moulds to the 10 micrometer level by FIB technique rather than other techniques. In this paper, the grooving characteristics for die ＆ mould materials by FIB were carried out experimentally in order to compare the machining characteristics of FIB with conventional machining methods. The results showed that the machining parameters and the scanning path of FIB affects the precision. The machined width and depth of the groove varied depending on the required depth due to the redeposition of the sputtered ion material accumulating on both the bottom and the side of the wall.

• 한국정밀공학회지
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• 제28권2호
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• pp.245-250
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• 2011

A high-resolution shadow mask, a nanostencil, is widely used for high resolution lithography. This high-resolution shadowmask is often fabricated by a combination of MEMS processes and focused ion beam (FIB) milling. In this study, FIB milling on 500-nm-thin SiN membrane was tested and characterized. 500 nm thick and $2{\times}2$ mm large membranes were made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. A subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to the high resolution of the FIB milling process, nanoscale apertures down to 60 nm could be made into the membrane. The nanostencil could be used for nanoscale patterning by local deposition through the apertures.

• 한국정밀공학회지
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• 제31권3호
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• pp.207-213
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• 2014

A study was carried out to fabricate the cutting tool geometry with micro/nanoscale on the single crystal diamond tool by using the FIB. The FIB technique is an ideal tool for TEM sample preparation that allows for the fabrication of electron-transparent foils. The FIB is appropriate techniques to sample and subsequently define the chemical composition and the structural state of mineral inclusion on the micro/nanoscale. The combination of FIB with a SEM allows for 3D information to be obtained from samples including 3D imaging. Cutting strategies were demonstrated to improve the performance of cutting tool geometry and to generate high aspect ratio micro cutting tool. A finely focused beam of 30keV Ga+ ions was used to mill cutting tool shapes for various micro patterns. Therefore FIB sputtering is used to shape a variety of cutting tools with dimensions in the $1-5{\mu}m$ range and cutting edge radii of curvature of under 50nm.

• 한국광물학회지
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• 제28권4호
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• pp.293-297
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• 2015

집속이온빔(FIB, focused ion beam)법은 광물 및 지질시료의 분석 대상 위치로부터 투과전자현미경(TEM, transmission electron microscope) 관찰을 위한 박편을 정밀하게 제작할 수 있는 방법으로 널리 보급되고 있다. 그러나 박편 제작과정에서 Ga 이온빔에 의한 구조 손상이나 인위적 효과들이 발생하여 전자빔에 의한 손상과 함께 TEM 분석에서의 난점들 중 하나이다. 광물 시료 FIB 박편의 TEM 관찰에서 석영과 장석의 비정질화, 커튼 효과, Ga 오염 등이 확인되었으며, 특히 입자 경계 부근이나 두께가 얇은 곳에서 이들 현상이 보다 뚜렷하다. 박편 제작 시의 가속전압 및 전류 조정 등의 분석절차 개선으로 이온빔 손상을 줄일 수 있으나, 어느 정도의 손상이나 오염은 피할 수 없으므로 TEM 박편 관찰과 해석에서 유의하여야 한다.

• Applied Microscopy
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• 제40권4호
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• pp.177-183
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• 2010

집속이온빔장치(focused ion beam, FIB)는 전자보다 무거운 양이온빔을 이용하여 시료를 10~100 nm 정도로 깎아 낼 수 있는 장비로 주로 재료분야에서 활용되어 왔다. 최근 세계적으로 의생물 분야에서의 활용이 점차 늘어나고 있는 추세에 있어 국내연구자들의 이해를 돕기 위해 간단히 기기의 메커니즘과 그 활용예를 기술 하고자 한다. FIB에 주로 사용되는 갈륨(Ga)빔의 특성 때문에 시료의 표면을 효과적으로 쳐 낼 수 있고, 전계 방사형 주사전자현미경(FESEM)을 이용하면 그 표면의 영상을 얻을 수 있다. 이 두 가지 시스템을 하나의 시스템으로 묶어낸 것을 dual beam system이라고 한다. 최근 이러한 시스템을 이용하여 효모, 병원균에 감염된 식물 등이 소개되었으며, 통상적으로 경도가 높아 처리하기 힘든 상아나 어패류의 껍질 등의 시료를 효과적으로 분석한 연구도 있다. 또한 FIB를 이용한 밀링과 FESEM을 이용한 절단면 촬영을 반복하여 얻는 영상을 이용하여 신경계의 연결망을 재구성하려는 연구가 활발하게 진행되고 있다. FIB/FESEM dual beam은 의생물학 분야의 다양한 연구에 활용될 수 있는 유용한 도구며, 의생물 시료의 3차원 연구에 크게 기여할 수 있을 것으로 판단된다.

• 소성∙가공
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• 제16권4호
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• pp.323-328
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• 2007

The residual stress in axial direction of the steel wires has been measured by using a method based on the combination of the focused ion beam(FIB) milling and digital image correlation(DIC) program. The residual stress is calculated from the measured displacement field before and after the introduction of a slot along the steel wires. The displacement is obtained by the digital correlation analysis of high-resolution scanning electron micrographs, while the slot is introduced by FIB milling with low energy beam. The experimental procedures are described and the feasibilities are demonstrated in steel wires fabricated with different conditions. It reveals that the tensile residual stress is formed in all steel wires and this is strongly influenced by the fabrication conditions.

• 한국정밀공학회지
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• 제28권3호
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• pp.383-388
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• 2011

The cold hollow cathode gas ion source is under development for multi aperture focused ion beam (FIB) system. In this paper, we describe the cold hollow cathode ion source design and the general ion source performance using Ar gas. The glow discharge characteristics and the ion beam current density at various operation conditions are investigated. This ion source can generate maximum ion beam current density of approximately 120 mA/$cm^2$ at ion beam potential of 10 kV. In order to effectively transport the energetic ions generated from the ion source to the multi-aperture focused ion beam(FIB) system, the einzel lens system for ion beam focusing is designed and evaluated. The ions ejected from the ion source can be forced to move near parallel to the beam axis by adjusting the potentials of the einzel lenses.