• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.113-116
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• 2003

Confluence buffers and single flux quantum (SFQ) switches are essential components in constructing a high speed superconductive Arithmetic Logic Unit (ALU). In this work, we developed a SFQ confluence buffer and an SFQ switch. It is very important to optimize the circuit parameters of a confluence buffer and an SFQ switch to implement them into an ALU. The confluence buffer that we are currently using has a small bias margin of $\pm$11％. By optimizing it with a Josephson circuit simulator, we improved the design of confluence buffer. Our simulation study showed that we improved bias global margin of 10％ more than the existent confluence buffer. In simulations, the minimal bias margin was $\pm$33％. We also designed, fabricated, and tested an SFQ switch operating in a DC mode. The mask layout used to fabricate the SFQ switch was obtained after circuit optimization. The test results of our SFQ switch showed that it operated correctly and had a reasonably wide margin of $\pm$15％.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.123-126
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• 2003

RSFQ (Rapid Single Flux Quantum) circuits are used in many practical applications. RSFQ DFFC (Delay Flip-Flop with complementary outputs) circuits can be used in a RAM, an ALU (Arithmetic Logic Unit), a microprocessor, and many communication devices. A DFFC circuit has one input, one switch input, and two outputs (output l and output 2). DFFC circuit functions in such way that output 1 follows the input and output 2 is the complement of the input when the switch input is "0." However, when there is a switch input "1."the opposite output signals are generated. In this work, we have designed an RSFQ DFFC circuit based on 1 ㎄/$\textrm{cm}^2$ niobium trilayer technology. As circuit design tools, we used Xic, WRspice, and Lmeter After circuit optimization, we could obtain the bias current margins of the DFFC circuit to be above 32％.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.142-143
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• 2002

최근 RSFQ (Rapid Single Flux Quantum) 기술은 초고속, 극저전력의 초전도 디지털 전자회로의 구현 가능성으로 인해 많은 관심을 모으고 있다.[1] 특히 정밀측정 및 표준 분야에 있어서, 기존의 직류 전압표준 소자에 비해 작동이 간편하며, 다양한 측정기술에 활용할 수 있는 차세대 조셉슨 전압표준용 소자에 응용가능성이 주목받고 있다. 그러나 RSFQ의 이러한 강점들이 제대로 발휘되려면 1 ㎄/$\textrm{cm}^2$ 수준의 고임계전류, 10 $\mu\textrm{m}$ 이하의 미소 조셉슨 접합을 신뢰성 있고 재현성 있게 제작할 수 있어야한다. (중략)

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.269-269
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• 2007

• Progress in Superconductivity
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• v.3 no.1
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• pp.17-22
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• 2001

Practical implementation of the SFQ technology in most application requires more than single-chip-level circuit complexity. Multiple chips have to be integrated with a technology that is reliable at cryogenic temperatures and supports an inter-chip data transmission speed of tens of GHz. In this work, we have studied two basic issues in building large RSFQ circuits. The first is the reliable inter-chip SFQ pulse transfer technique using Multi-Chip-Module (MCM) technology. By noting that the energy contained in an SFQ pulse is less than an attojoule, it is not very surprising that the direct transmission of a single SFQ pulse through MCM solder bump connectors can be difficult and an innovative technique is needed. The second is the recycling of the bias currents. Since RSFQ circuits are dc current biased the large RSFQ circuits need serial biasing to reduce the total amount of current input to the circuit.

• Nuclear Engineering and Technology
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• v.41 no.5
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• pp.729-738
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• 2009

Given the evolution of High-Temperature Gas-cooled Reactor(HTGR) designs, the source terms for licensing must be developed. There are three potential source terms: fission products, actinides in the fuel and tritium in the coolant. It is necessary to provide first an inventory of the source terms under normal operations. An analysis of source terms has yet to be performed for HTGRs. The previous code, which can estimate the inventory of the source terms for LWRs, cannot be used for HTGRs because the general data of a typical neutron cross-section and flux has not been developed. Thus, this paper uses a combination of the MCNP, ORIGEN, and MONTETEBURNS codes for an estimation of the source terms. A method in which the HTR-10 core is constructed using the unit lattice of a body-centered cubic is developed for core modeling. Based on this modeling method by MCNP, the generation of fission products, actinides and tritium with an increase in the burnup ratio is simulated. The model developed by MCNP appears feasible through a comparison with models developed in previous studies. Continuous fuel management is divided into five periods for the feeding and discharging of fuel pebbles. This discrete fuel management scheme is employed using the MONTEBURNS code. Finally, the work is investigated for 22 isotope fission products of nuclides, 22 actinides in the core, and tritium in the coolant. The activities are mainly distributed within the range of $10^{15}{\sim}10^{17}$ Bq in the equilibrium core of HTR-10. The results appear to be highly probable, and they would be informative when the spent fuel of HTGRs is taken into account. The tritium inventory in the primary coolant is also taken into account without a helium purification system. This article can lay a foundation for future work on analyses of source terms as a platform for safety assessment in HTGRs.

• Journal of Biomedical Engineering Research
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• v.24 no.3
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• pp.159-165
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• 2003

We developed a 37-channel magnetoencephalogram (MEG) measurement system based on low-noise superconducting quantum interference device (SQUID) magnetometets, and operated the system to measure MEG signals. By using double relaxation oscillation SQUIDs with high flux-4o-voltage transfers, the SQUID outputs could be measured directly by room temperature preamplifiers and compact readout circuits were used for SQUID operation. The average field noise level of the magnetometers is about 3 fT/√Hz in the white region, low enough for MEG measurements when operated inside a magnetically shielded room. The 37 magnetometers were distributed on a hemispherical surface haying a radius of 125 mm. In addition to the 37 sensing channels. 11 reference channels were installed to pickup external noise and to form software gradiometers. A low-noise liquid helium dewar was fabricated with a liquid capacity of 30 L and boil-off rate of 4 L/d. The signal processing software consists of digital filtering, software gradiometer, isofield mapping and source localization. By using the developed system, we measured auditory-evoked fields and localized the current dipoles, demonstrating the effectiveness of the system.

• Nuclear Engineering and Technology
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• v.43 no.3
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• pp.301-308
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• 2011

The diametral creep of pressure tubes (PTs) in CANDU (CANada Deuterium Uranium) reactors is one of the principal aging mechanisms governing the heat transfer and hydraulic degradation of the heat transport system (HTS). PT diametral creep leads to diametral expansion, which affects the thermal hydraulic characteristics of the coolant channels and the critical heat flux (CHF). The CHF is a major parameter determining the critical channel power (CCP), which is used in the trip setpoint calculations of regional overpower protection (ROP) systems. Therefore, it is essential to predict PT diametral creep in CANDU reactors. PT diametral creep is caused mainly by fast neutron irradiation, temperature and applied stress. The objective of this study was to develop a bundle position-wise linear model (BPLM) to predict PT diametral creep employing previously measured PT diameters and HTS operating conditions. The linear model was optimized using a genetic algorithm and was devised based on a bundle position because it is expected that each bundle position in a PT channel has inherent characteristics. The proposed BPLM for predicting PT diametral creep was confirmed using the operating data of the Wolsung nuclear power plant in Korea. The linear model was able to predict PT diametral creep accurately.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.3
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• pp.9-19
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• 2002

By using the thermionic emission model, the L-I-V(power-current-voltage) characteristics of a SCH(seperate confinement heterostructure) QW(quantum well) laser diode is analytically derived. We derived the relationships between the bulk carrier density of SCH regions and the confined carrier density of QW. The L-I-V characteristics is derived analytically by using current continuity equations. Solving the ambipolar diffusion equation under the condition of high level injection and charge neutrality, the current distribution in the SCH regions is considered. Results showed that the major factor affecting the laser I-V characteristics was the change of potential barrier at the cladding-SCH interface. Also the series resistance of a laser diode was decreased and the carrier injection was increased by increasing the forward flux of injection current from cladding to SCH region.