• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.417-417
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• 2009

Although a transparent conductive film (TCF) belongs to essential supporting materials for many device applications such as touch screens, flat panel displays, and sensors, a conventional transparent conductive material, indium-tin oxide (ITO), suffers from considerable drawback because the price of indium has soared since 2001. Despite a recent falloff, a demand of ITO is expected to increase sharply in the future due to the trend of flat panel display technologies toward flexible, paper-like features. There have been recently extensive studies to replace ITO with new materials, in particular, carbon nanotubes (CNTs) since CNTs possess excellent properties such as flexibility, electrical conductivity, optical transparency, mechanical strength, etc., which are prerequisite to TCFs. This study fabricated TCFs with single-walled carbon nanotubes (SWCNTs) produced by arc discharge. The SWCNTs were dispersed in water with a surfactant of sodium dodecyl benzene sulfonate (NaDDBS) under sonication. Carbon black and fullerene nanoparticles were added to the SWCNT-dispersed solution to enhance contact resistance between CNTs. TCFs were manufactured by a filtration and transfer method. TCFs added with carbon black and fullerene nanoparticles were characterized by scanning electron microscopy (SEM), UV-vis spectroscopy (optical transmittance), and four-point probe measurement (sheet resistance).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.302.1-302.1
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• 2016

Solution-processed amorphous metal-oxide thin-film transistors (TFTs) are considered as promising candidates for the upcoming transparent and flexible electronics due to their transparent property, good performance uniformity and possibility to fabricate at a low-temperature. In addition, solution processing metal oxide TFTs may allow non-vacuum fabrication of flexible electronic which can be more utilizable for easy and low-cost fabrication. Recently, for high-mobility oxide TFTs, multi-layered oxide channel devices have been introduced such as superlattice channel structure and heterojunction structure. However, only a few studies have been mentioned on the bias illumination stress in the multi- layered oxide TFTs. Therefore, in this research, we investigated the effects of bias illumination stress in solution-processed bilayer oxide TFTs which are fabricated by the deep ultraviolet photochemical activation process. For studying the electrical and stability characteristics, we implemented positive bias stress (PBS) and negative bias illumination stress (NBIS). Also, we studied the electrical properties such as field-effect mobility, threshold voltage ($V_T$) and subthreshold slop (SS) to understand effects of the bilayer channel structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.301.2-301.2
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• 2016

Metal-oxide thin-film transistors (TFTs) have gained a considerable interest in transparent electronics owing to their high optical transparency and outstanding electrical performance even in an amorphous state. Also, these metal-oxide materials can be solution-processed at a low temperature by using deep ultraviolet (DUV) induced photochemical activation allowing facile integration on flexible substrates [1]. In addition, high-dielectric constant (k) inorganic gate dielectrics are also of a great interest as a key element to lower the operating voltage and as well as the formation of coherent interface with the oxide semiconductors, which may lead to a considerable improvement in the TFT performance. In this study, we investigated the electrical properties of solution-processed high-k strontium-doped AlOx (Sr-AlOx) gate dielectrics. Using the Sr-AlOx as a gate dielectric, indium-gallium-zinc oxide (IGZO) TFTs were fabricated and their electrical properties are analyzed. We demonstrate IGZO TFTs with a 10-nm-thick Sr-AlOx gate dielectric which can be operated at a low voltage (~5 V).

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1257-1260
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• 2007

A single-wall carbon nanotube (SWNT) transparent conductive film (TCF) was fabricated using a simple inkjet printing method. The TCF could be selectively patterned by controlling the dot size to diameters as small as $34\;{\mu}m$. In this repeatable and scalable process, we achieved 71% film transmittance and a resistance of 900 ohm/sq sheet with an excellent uniformity, about ${\pm}\;5%$ deviation overall. Inkjet printing of SWNT is substrate friendly and the TCF is printed on a flexible substrate. This method of fabrication using direct printing permits mass production of TCF in a large area process, reducing processing steps and yielding low-cost TCF fabrications on a designated area using simple printing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.44-44
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO channel layers(ZnO TFTs) having different channel thicknesses. The ZnO film were deposited as active channel layers on $Si_3N_4/Ti/SiO_2p$-Si substrates by rf magnetron sputtering at $100\;^{\circ}C$ without additional annealing. Also the Zno thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film were deposited as gate insulator by PE-CVD at $15\;^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.2
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• pp.49-53
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• 2018

Recently, technologies for integrating various devices such as a flexible device, a transparent device, and a MEMS device have been developed. The key processes of heterogeneous device manufacturing technology are chip or wafer-level bonding process, substrate grinding process, and thin substrate handling process. In this study, the effect of Si substrate grinding process on the electrical properties of tin oxide thin films applied as transparent thin film transistor or flexible electrode material was investigated. As the Si substrate thickness became thinner, the Si d-spacing decreased and strains occurred in the Si lattice. Also, as the Si substrate thickness became thinner, the electric conductivity of tin oxide thin film decreased due to the lower carrier concentration. In the case of the thinner tin oxide thin film, the electrical conductivity was lower than that of the thicker tin oxide thin film and did not change much by the thickness of Si substrate.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.57-60
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• 2009

The conductive coating method was used for a various industrial fields. For example, Sputtering process is using to a coat of ITO layer in LCD or OLED panel manufacture process and fabricate a base layer of substrate of an electric printing device. However, conventional coating process (beam sputtering, spin coating etc.) has a problems in the industrial manufacturing process. These processes have a very high cost and critical manufacturing environment as a vacuum process. Recently, many researchers were proposed a various printing process instead of conventional coating process. In this paper, we propose an ESD printing process in ITO coating layer and apply to fabricate a conductive coating film. Ours transparent electrode had a surface resistance of about $66{\Omega}/{\square}$ and transparent of 74% in the wavelength of 500nm. This transparent electrode manufacturing process will be applied to Roll-to-Roll process. In addition, we developed roll printing process system for the next generation flexible solar cell.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.6
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• pp.577-582
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• 2013

AZO (aluminum-doped zinc oxide) is one of the best candidate materials to replace ITO (indium tin oxide) for TCOs (transparent conductive oxides) used in flat panel displays, organic light-emitting diodes (OLEDs), and organic solar cells (OSCs). In the present study, to apply an AZO thin film to the transparent electrode of an organic solar cell, a low-temperature selective atomic layer deposition (ALD) process was adopted to deposit an AZO thin film on a flexible poly-ethylene-naphthalate (PEN) substrate. The reactive gases for the ALD process were di-ethyl-zinc (DEZ) and tri-methyl-aluminum (TMA) as precursors and H2O as an oxidant. The structural, electrical, and optical characteristics of the AZO thin film were evaluated. From the measured results of the electrical and optical characteristics of the AZO thin films deposited on the PEN substrates by ALD, it was shown that the AZO thin film appeared to be comparable to a commercially used ITO thin film, which confirmed the feasibility of AZO as a TCO for flexible organic solar cells in the near future.

• Laser Solutions
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• v.13 no.1
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• pp.11-15
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• 2010

Indium tin oxide (ITO) provides high electrical conductivity and transparency in the visible and near IR (infrared) wavelengths. Thus, it is widely used as a transparent electrode for the fabrication of liquid crystal displays (LCDs) and organic light emitting diode displays (OLRDs), photovoltaic devices, and other optical applications. Lasers have been used for removing coating on polymer substrate for flexible display and electronic industry. In selective removal of ITO layer, laser wavelength, pulse energy, scan speed, and the repetition rate of pulses determine conditions, which are efficient for removal of ITO coating without affecting properties of the polymer substrate. ITO coating removal with a laser is more environmentally friendly than other conventional etching methods. In this paper, pattering of ITO film from polymer substrates is described. The Yb:KGW femtosecond laser processing system with a pulse duration of 250fs, a wavelength of 1030nm and a repetition rate of 100kHz was used for removing ITO coating in air. We can remove the ITO coating using a scanner system with various pulse energies and scan speeds. We observed that the amount of debris is minimal through an optical and a confocal microscope, and femtosecond laser pulses with 1030nm wavelength are effective to remove ITO coating without the polymer substrate ablation.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1425_1426
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• 2009

In this study, commercially available polyethylene terephthalate(PET), which is widely used as a substrate of flexible electronic devices, was modified by dielectric barrier discharge(DBD) method in an air condition at atmospheric pressure, and aluminium - doped zinc oxide (ZnO:Al) transparent conducting film was deposited on PET substrate by r. f. magnetron sputtering method. Surface analysis and characterization of the plasma-treated PET substrate was carried out using contact angle measurements, X-ray Photoelectron Spectroscopy(XPS) and Atomic Force Microscopy (AFM). Especially the effect of surface state of PET substrate on some important properties of ZnO:Al transparent conducting film such as electrical and morphological properties and deposition rate of the film, was studied experimentally. The results showed that the contact angle of water on PET film was reduced significantly from $62^{\circ}$ to $43^{\circ}$ by DBD surface treatment at 20 min. of treatment time. The plasma treatment also improved the deposition rate and electrical properties. The deposition rate was increased almost linearly with surface treatment time. The lowest electrical resistivity as low as $4.97{\times}10^{-3}[\Omega-cm]$ and the highest deposition rate of 234[${\AA}m$/min] were obtained in ZnO:Al film with surface treatment time of 5min. and 20min., respectively.