• Title/Summary/Keyword: flexible transparent film

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Mechanical and Electrical Failure of ITO Film with Different Shape during Twisting Deformation (비틀림 변형 중 ITO 필름의 시편 형태에 따른 기계적 전기적 파괴 연구)

  • Kwon, Y.Y.;Kim, Byoung-Joon
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.4
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    • pp.53-57
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    • 2017
  • The most representative transparent electrode in the modern society is ITO (Indium Tin Oxide). ITO is widely used in general for touch panels and displays due to its high electrical and optical properties. However, in general, mechanical deformation causes deterioration and destruction of device properties because ITO is basically vulnerable to mechanical deformation. Therefore, the in-depth understanding on the stability of ITO film during various mechanical deformations is necessary. In this study, the reliability and mechanical properties ITO sample having different length, width, and area were investigated. The electrical stability was estimated according to electrical resistance change. The stability was dropped as the sample length, and width increased and the sample area decreased. The electrical stability of ITO film was correlated with twisting strain including tensile, compressive and shear stress.

Influence of Ni Thin Film Position on the Opto-electrical Properties of GZO Films (Ni 박막 위치에 따른 GZO 투명전도막의 전기광학적 물성 변화)

  • Mun, Hyun Joo;Jeon, Jae-Hyun;Gong, Tae-Kyung;Seo, Ki-Woong;Oh, Jeong Hyun;Kim, Sun-Kyung;Choi, Dong-Hyuk;Son, Dong-Il;Kim, Daeil
    • Journal of the Korean Society for Heat Treatment
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    • v.28 no.3
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    • pp.121-125
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    • 2015
  • GZO single layer, Ni buffered GZO(GZO/Ni), Ni intermediated GZO (GZO/Ni/GZO) and Ni capped GZO (Ni/GZO) films were prepared on poly-carbonate (PC) substrates by RF and DC magnetron sputtering without intentional substrate heating and then the influence of the Ni (2 nm thick) thin film on the optical, electrical and structural properties of GZO films were investigated. As deposited GZO single layer films show the optical transmittance of 81.3% in the visible wavelength region and a resistivity of $1.0{\times}10^{-2}{\Omega}cm$, while GZO/Ni/GZO trilayer films show a lower resistivity of $6.4{\times}10^{-4}{\Omega}cm$ and an optical transmittance of 74.5% in this study. Based on the figure of merit, it can be concluded that the intermediated Ni thin film effectively enhances the opto-electrical performance of GZO films for use as transparent conducting oxides in flexible display applications.

A Review : Improvement of Electrical Performance in the Oxide Semiconductor Thin Film Transistor Using Various Treatment (산화물 반도체의 다양한 처리를 통한 박막트랜지스터의 전기적 특성 향상)

  • Kim, Taeyong;Jang, Kyungsoo;Raja, Jayapal;Phu, Nguyen Thi Cam;Lee, Sojin;Kang, Seungmin;Trinh, Than Thuy;Lee, Youn-Jung;Yi, Junsin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.1
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    • pp.1-5
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    • 2016
  • The ultimate aims of display market is transparent or flexible. Researches have been carried out for various applications. It has been possible to reduced the process steps and get good electrical properties for semiconductors with large optical bandgaps. Oxide semiconductors have been established as one of the leading and promising technology for next generation display panels. In this paper, alternative treatment processes have been tried for oxide semiconductors of thin film transistors to increase the electrical properties of the thin film transistors and to investigate the mechanisms. There exist a various oxide semiconductors. Here, we focused on InGaZnO, ZnO and InSnZnO which are commercialized or researched actively.

Low-Voltage, Room temperature Fabricated ZnO Thin Film Transistor using High-K $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ Gate Insulator (고유전 $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ 게이트 절연막을 이용한 저전압 구동 상온공정 ZnO 박막트랜지스터)

  • Cho, Nam-Gyu;Kim, Dong-Hun;Kim, Kyoung-Sun;Kim, Ho-Gi;Kim, Il-Doo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.96-96
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    • 2007
  • Low voltage organic TFTs (OTFTs) and ZnO based TFTs (<5V), utilizing room temperature deposited $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN) thin films were recently reported, pointing to high-k gate insulators as a promising route for realizing low voltage operating flexible electronics. $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN) thin film is one of the most promising materials for gate insulator because of its large dielectric constant (~60) at room temperature. However their tendency to suffer from relatively high leakage current at low electric field (>0.3MV/cm) hinder the application of BZN thin films for gate insulator. In order to improve leakage current characteristics of BZN thin film, we mixed 30mol% MgO with 70mol% BZN and their dielectric and electric properties were characterized. We fabricated field-effect transistors with transparent oxide semiconductor ZnO serving as the electron channel and high-k $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ as the gate insulator. The devices exhibited low operation voltages (<4V) due to high capacitance of the $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ dielectric.

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Effect of the oxygen flow ratio on the structural and electrical properties of indium zinc tin oxide (IZTO) films prepared by pulsed DC magnetron sputtering

  • Son, Dong-Jin;Nam, Eun-Kyoung;Jung, Dong-Geun;Ko, Yoon-Duk;Choi, Byung-Hyun;Kim, Young-Sung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.168-168
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    • 2010
  • Transparent conduction oxides (TCOs) films is extensively reported for optoelectronic devices application such as touch panels, solar cells, liquid crystal displays (LCDs), and organic light emitting diodes(OLEDs). Among the many TCO film, indium tin oxide(ITO) is in great demand due to the growth of flat panel display industry. However, indium is not only high cost but also its deposits dwindling. Therefore, many studies are being done on the transparent conductive oxides(TCOs). We fabricated a target of IZTO(In2O3:ZnO:SnO2=70:15:15 wt.%) reduced indium. Then, IZTO thin films were deposited on glass substrates by pulsed DC magnetron sputtering with various oxygen flow ratio. The substrate temperature was fixed at the room temperature. We investigated the electrical, optical, structural properties of IZTO thin films. The electrical properties of IZTO thin films were dependent on the oxygen partial pressure. As a result, the most excellent properties of IZTO thin films were obtained at the 3% of oxygen flow rate with the low resistivity of $7.236{\times}10^{-4}{\Omega}cm$. And also the optical properties of IZTO thin films were shown the good transmittance over 80%. These IZTO thin films were used to fabricated organic light emitting diodes(OLEDs) as anode and the device performances studied. The OLED with an IZTO anode deposited at optimized deposition condition showed good brightness properties. Therefore, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

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Properties of Silk-Sericin Films Modified by Isocyanate Compounds (화학 개질된 실크세리신 필름의 특성)

  • Yoon, Heung-Soo;Takahashi, Kiyohisa
    • Textile Coloration and Finishing
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    • v.20 no.2
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    • pp.29-37
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    • 2008
  • Polar amino groups of the waste SS(silk-sericin) were modified by two isocyanate compounds of MOI[2-(methacryloyloxy)ethyl isocyanate] and AOI [2-(acryloyloxy)ethyl isocyanate]. When the MOISS (MOI-modified silk sericin) or AOISS(AOI-modified silk sericin) was pressed hot, vinyl groups in the MOI or AOI were polymerized and then the flexible and transparent films were obtained. Tensile moduli and strengths of the MOISS films were significantly improved as the MOI contents increased. By the addition of the isocyanate compounds, silk sericin films exhibited lower solubility to the distilled water($80^{\circ}C$) and also lower swell ratio to the distilled water(room temperature). In the effect of tensile properties and restraining the water swelling, MOI was better than AOI. BOD(biochemical oxygen demand)/TOD(theoretical oxygen demand) of the pure sericin film was almost 100% perfect level after 10 days immersion into the activated sludge. With increasing isocyanate content reacted with polar amino groups, BOD/TOD decreased. When more than 50 mol% of polar amino groups remained unreacted, sericin films could retain more biodegradability. Comparing with MOI from the viewpoint of biodegradability, AOI was more effective.

A Study on the Development of ac Powder Electroluminescent Lamp (AC 구동 분산형 전장발광램프 개발에 관한 연구)

  • Kim, H.S.;Kim, E.D.;Kang, D.P.;Park, J.M.;Moon, S.I.;Kang, U.;Chun, B.D.
    • Proceedings of the KIEE Conference
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    • 1989.07a
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    • pp.306-309
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    • 1989
  • This paper describes the Manufacturing process and electrical properties of ac thick film electroluminescent lamps which made of the mixture of ZnS:Cu,Cl phosphor powder and polymer binding materials. The phosphor layer is sandwiched between two electrodes, one of which is transparent, and is supported by a substrate. The substrate may be glass or flexible plastic or it may be metallic. In this study we manufactured suspend layer which consists of ZnS:Cu,Cl powder suspended in a NBR. As yet our results are behind other commercial product in electrical properties and brightness. However they can be improved by selection of appropriate polymer binding materials, development of blending technology.

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Electrical Characteristic Analysis of IGZO TFT with Poly (4-vinylphenol) Gate Insulator according to Annealing Temperature (Poly (4-vinylphenol) 게이트 절연체를 적용한 IGZO TFT의 열처리 온도에 따른 전기적 특성 분석)

  • Park, Jung Hyun;Jeong, Jun Kyo;Kim, Yu Jeong;Jun, Jung Byung;Lee, Ga Won
    • Journal of the Semiconductor & Display Technology
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    • v.16 no.1
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    • pp.97-101
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    • 2017
  • In this paper, IGZO thin film transistor (TFT) was fabricated with cross-linked Poly (4-vinylphenol) (PVP) gate dielectric for flexible, transparent display applications. The PVP is one of the candidates for low-temperature gate insulators. MIM structure was fabricated to measure the leakage current and evaluate the insulator properties according to the annealing temperature. Low leakage current ( <0.1nA/cm2 @ 1MV/cm ) was observed at $200^{\circ}C$ annealing condition and decreases much more as the annealing temperature increases. The electrical characteristics of IGZO TFT such as subthreshold swing, mobility and ON/OFF current ratio were also improved, which shows that the performance of IGZO TFTs with PVP can be enhanced by reducing the amount of incomplete crosslinking in PVP.

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Influence of Ni Interlayer on the Electrical and Optical Properties of SnO2 thin films (Ni 층간박막에 따른 SnO2 박막의 전기적, 광학적 물성 변화)

  • Song, Young-Hwan;Eom, Tae-Young;Kim, Daeil
    • Journal of the Korean Society for Heat Treatment
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    • v.29 no.5
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    • pp.216-219
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    • 2016
  • $SnO_2$ single layer films (100 nm thick) and 2 nm thick Ni intermediated $SnO_2$ films were deposited on glass substrate by RF and DC magnetron sputtering without intentional substrate heating and then the influence of the Ni interlayer on the electrical and optical properties of the films were investigated. As deposited $SnO_2$ single layer films show the optical transmittance of 82.6% in the visible wavelength region and a resistivity of $6.6{ \times}10^{-3}{\Omega}cm$, while $SnO_2/Ni/SnO_2$ trilayer films show a lower resistivity of $2.7{ \times}10^{-3}{\Omega}cm$ and an optical transmittance of 76.3% in this study. Based on the figure of merit, it can be concluded that the intermediate Ni thin film effectively enhances the opto-electrical performance of $SnO_2$ films for use as transparent conducting oxides in flexible display applications.

Buffer and Anode Combined Ta Doped In2O2 Electrodes Prepared by Co-sputtering for PEDOT:PSS-free Organic Solar Cells

  • Lee, Hye-Min;Noh, Yong-Jin;Na, Seok-In;Park, Hyun-Woo;Chung, Kwun-Bum;Kima, Han-Ki
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.168.1-168.1
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    • 2014
  • We developed poly (3,4-ethylene dioxylene thiophene):poly (styrene sulfonic acid) (PEDOT:PSS)-free organic solar cells (OSCs) using buffer and anode combined Ta doped $In_2O_3$ (ITaO) electrodes. To optimize the ITaO electrodes, we investigated the effect of $Ta_2O_5$ doping power on the electrical, optical, and structural properties of the co-sputtered ITaO films. The optimized ITaO film doped with 20 W $Ta_2O_5$ radio frequency power showed sheet resistance of 17.11 Ohm/square, a transmittance of 93.45%, and a work function of 4.9 eV, all of which are comparable to the value of conventional ITO electrodes. The conventional bulk heterojunction OSC with ITaO anode showed a power conversion efficiency (PCE) of 3.348% similar to the OSCs (3.541%) with an ITO anode. In addition, OSCs fabricated on an ITaO electrode successfully operated without an acidic PEDOT:PSS buffer layer and showed a PCE of 2.634%, which was much higher than the comparable no buffer OSC with an ITO anode. Therefore, co-sputtered ITaO electrodes simultaneously acting as a buffer and an anode layer can be considered promising transparent electrodes for cost-efficient and reliable OSCs because they can eliminate the use of an acidic PEDOT:PSS buffer layer.

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