• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1743-1744
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• 2006

기존의 89S51의 Flash Memory에 데이터를 저장하기 위해서 패러럴 포트를 사용하였다. 하지만 패러럴 포트를 이용한 방법은 많은 단점을 갖고 있는데, 그 중에 하나의 포트에 하나의 디바이스밖에 접속 할 수 없기 때문에 여러 디바이스를 접속하기 위해서는 포트 수를 증가시켜야 한다는 문제점이 있다. PC는 패러럴 포트를 $1{\sim}2$개 정도만 갖고 있어서 확장을 하기가 여의치 않다. 이에 따라 패러럴 포트의 단점을 보완하고자 한다. 이러한 문제를 해결하고 보완 할 수 있는 USB 통신을 이용해 Micro-Controller인 89S51에 내장된 Flash Memory에 데이터를 저장하려고 한다.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.138-142
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• 2019

As the NAND flash memory goes to 3D vertical Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) structure, the lateral charge migration can be critical in the reliability performance. Even more, with miniaturization of flash memory cell device, just a little movement of trapped charge can cause reliability problems. In this paper, we propose a method of predicting the trapped charge profile in the retention mode. Charge diffusivity in the charge trapping layer (Si₃N₄) was extracted experimentally, and the effect on the trapped charge profile was demonstrated by the simulation and experiment.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.3
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• pp.61-71
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• 2014

As the occupancy rate of the flash memory increases in the storage media market for the embedded system and the semi-conductor industry grows, the demand and supply of flash memory is increasing by a big margin. They are especially used in large quantity in the smart phones, tablets, PC, SSD and Soc(System on Chip) etc. The flash memory is divided into the NOR type and NAND type according to the cell arrangement structure and the NAND type is divided into the SLC(Single Level Cell) and MLC(Multi Level Cell) according to the number of bits that can be stored in each cell. Many tests have been performed on NOR type such as BIST(Bulit-In Self Test) and BIRA(Bulit-In Redundancy Analysis) etc, but there is little study on the NAND type. For the case of the existing BIST, the test can be proceeded using external equipments like ATE of high price. However, this paper is an attempt for the improvement of credibility and harvest rate of the system by proposing the BIST for the MLC NAND type flash memory of Finite State Machine structure on which the pattern test can be performed without external equipment since the necessary patterns are embedded in the interior and which uses the MLC NAND March(x) algorithm and pattern which had been proposed for the MLC NAND type flash memory.

• Journal of the Korea Society of Computer and Information
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• v.14 no.3
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• pp.41-49
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• 2009

Flash memory has become increasingly requestion for the importance and the demand as a storage due to its low power consumption, cheap prices and large capacity medium. This research is to design a high performance flash memory structure for the substitution of a hard-disk by dynamic prefetching of aggressive spatial locality from the spatial smart buffer system. The proposed buffer system in a NAND flash memory consists of three parts, i.e., a fully associative victim buffer for temporal locality, a fully associative spatial buffer for spatial locality, and a dynamic fetching unit. We proposed new dynamic prefetching algorithm for aggressive spatial locality. That is to use the flash memory instead of the hard disk, the proposed flash system can achieve better performance gain by overcoming many drawbacks of the flash memory by the new structure and the new algorithm. According to the simulation results, compared with the smart buffer system, the average miss ratio is reduced about 26% for Mediabench applications. The average memory access times are improved about 35% for Mediabench applications, over 30% for Spec2000 applications.

• Journal of the Korea Society of Computer and Information
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• v.22 no.12
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• pp.9-15
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• 2017

This paper presents an efficient FTL for NAND flash based SSDs. Address translation information of page mapping based FTLs is stored on flash memory pages and address translation cache keeps frequently accessed entries. The proposed FTL of this paper reduces response time by considering both of temporal and spacial localities of page access patterns in translation cache management. The localities of several well-known traces are evaluated and determine the structure of the cache for high hit ratio. A simulation with several well-known traces shows that the presented FTL reduces response time in comparison to previous FTLs and can be used with relatively small size of caches.

• Proceedings of the KIEE Conference
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• 2007.04a
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• pp.157-159
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• 2007

The conventional hard disk has been the dominant database storage system for over 25 years. Recently, hybrid systems which incorporate the advantages of flash memory into the conventional hard disks are considered to be the next dominant storage systems to support databases for desktops and server computers. Their features are satisfying the requirements like enhanced data I/O, energy consumption and reduced boot time, and they are sufficient to hybrid storage systems as major database storages. However, we need to improve traditional index node management schemes based on B-Tree due to the relatively slow characteristics of hard disk operations, as compared to flash memory. In order to achieve this goal, we propose a new index node management scheme called FNC-Tree. FNC-Tree-based index node management enhanced search and update performance by caching data objects in unused free area of flash leaf nodes to reduce slow hard disk I/Os in index access processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.751-754
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• 2000

When charge-trap SONOS cells are used flash memory, the tunneling program/erase condition to minimize the generation of interface traps was investigated. SONOSFET NVSM cells were fabricated using 0.35$\mu\textrm{m}$ standard memory cell embedded logic process including the ONO cell process. based on retrograde twin-well, single-poly, single metal CMOS process. The thickness of ONO triple-dielectric for memory cell is tunnel oxide of 24${\AA}$, nitride of 74 ${\AA}$, blocking oxide of 25 ${\AA}$, respectively. The program mode(Vg: 7,8,9 V, Vs/Vd: -3 V, Vb: floating) and the erase mode(Vg: -4,-5,-6 V, Vs/Vd: floating, Vb: 3V) by modified Fowler-Nordheim(MFN) tunneling were used. The proposed programming condition for the flash memory of SONOSFET NVSM cells showed less degradation($\Delta$Vth, S, Gm) characteristics than channel MFN tunneling operation. Also the program inhibit conditions of unselected cell for separated source lines NOR-tyupe flash memory application were investigated. we demonstrated that the program disturb phenomenon did not occur at source/drain voltage of 1 V∼4 V and gate voltage of 0 V∼4.

• Journal of Digital Contents Society
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• v.16 no.4
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• pp.535-543
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• 2015

Recently, NAND flash based storage devices are being used as a storage device in various fields through hiding the limitations of NAND flash memory and maximizing the advantages. In particular, those storage devices contain a software layer called Flash Translation Layer(FTL) to hide the "erase-before-write" characteristics of NAND flash memory. FTL includes the metadata for managing the data requested from host. That metadata is stored in internal memory because metadata is very frequently accessed data for processing the requests from host. Thus, if the power-loss occurs, all data in memory is lost. So metadata management scheme is necessary to store the metadata periodically and to load the metadata in the initialization step. Therefore we proposed the scheme which satisfies the core requirements for metadata management and efficient operation. And we verified the efficiency of proposed scheme by experiments.

• Journal of KIISE:Computing Practices and Letters
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• v.14 no.2
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• pp.201-205
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• 2008

The flash memory is widely used as a main storage of embedded devices. It is adopted as a storage of database as growing the capacity of the flash memory. We run TPC-C benchmark on various FTL algorithms. But, the database shows poor performance on flash memory because the characteristic of I/O requests is full random. In this paper, we show the performance of all existing FTL algorithms is very poor. Especially, the FTL algorithm known as good at small mobile equipment shows worst performance. In addition, the chip-inter leaving which is a technique to improve the performance of the flash memory doesn't work well. In this paper, we inform you the reason that we need a new FTL algorithm and the direction for the database in the future.

• Journal of IKEEE
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• v.25 no.4
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• pp.774-777
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• 2021

In this paper, we analyzed the gate controllability of 3D NAND Flash Memory with Charge Trap Flash using Ferroelectric (CTF-F) structure. HfO₂, a ferroelectric material, has a high-k characteristic besides polarization. Due to these characteristics, gate controllability is increased in CTF-F structure and on/off current characteristics are improved in Bit Line(BL). As a result of the simulation, in the CTF-F structure, the channel length of String Select Line(SSL) and Ground Select Line(GSL) was 100 nm, which was reduced by 33% compared to the conventional CTF structure, but almost the same off-current characteristics were confirmed. In addition, it was confirmed that the inversion layer was formed stronger in the channel during the program operation, and the current through the BL was increased by about 2 times.