• 한국전기전자재료학회논문지
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• 제23권6호
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• pp.444-448
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• 2010

Based on first-principles calculations, we study the magnetic properties of Co, Ni, Fe, V, and Mn impurities in ZnO. The stabilities of the ferromagnetic state and the magnetic moment of each impurity largely depend on the amount of doped electron or hole. For lightly doped n-type ZnO, it is found that the doping of Ni ions is the most effective for inducing ferromagnetism, while Fe ions show the most stable ferromagnetic couplings for heavily doped n-type samples. The characteristics of the magnetic interactions of Co ions are similar with those of Fe ions, but Co ions require much larger amount of doped electron than Fe ions to show the ferromagnetic couplings. The ferromagnetic coupling between Mn and V ions is unstable in n-type conditions.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2009년도 정기총회 및 동계학술연구발표회
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• pp.74-75
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• 2009

First-principles calculations were carried out to investigate the crystal stability and magnetism of $Fe_{16}C_2$ and $Fe_{16}C_2$. Our precise calculations show that the structure of high carbon phase is $Fe_{16}C_2$ and this structure is more stable in the ferromagnetic state than the nonmagnetic state. The Fe atoms induced negative magnetic moment at the C atoms, which interact with the nearest Fe atoms.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2009년도 정기총회 및 동계학술연구발표회
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• pp.72-73
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• 2009

First-principles calculations were carried out to investigate the effects of Al impurities on bcc Fe magnetism by considering SOC. No significant solid solution hardening effect was found. Albeit the effects of the SOC by Al on spin magnetic moments were minor, there are sizeable orbital magnetic effects. It is concluded that the orbital magnetism due to the Al impurity is strongly related with the impurity screening of the system as seen in Si impurity case [3], but the effects of Al impurity is stronger than those of Si impurity in terms of orbital magnetism.

• 대한기계학회논문집A
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• 제33권8호
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• pp.733-738
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• 2009

Mechanical properties of <001> silicon nanowires are presented. In particular, predictions from the calculations based on different length scales, first principles calculations, atomistic calculations, and continuum nanomechanical theory, are compared for <001> silicon nanowires. There are several elements that determine the mechanics of silicon nanowires, and the complicated balance between these elements is studied. Specifically, the role of the increasing surface effects and reduced dimensionality predicted from theories of different length scales are compared. As a prototype, a Tersoff-based empirical potential has been used to study the mechanical properties of silicon nanowires including the Young's modulus. The results significantly deviates from the first principles predictions as the size of wire is decreased.

• 한국재료학회지
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• 제26권1호
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• pp.42-46
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• 2016

The properties of zinc oxynitride semiconductors and their associated thin film transistors are studied. Reactively sputtered zinc oxynitride films exhibit n-type conduction, and nitrogen-rich compositions result in relatively high electron mobility. Nitrogen vacancies are anticipated to act as shallow electron donors, as their calculated formation energy is lowest among the possible types of point defects. The carrier density can be reduced by substituting zinc with metals such as gallium or aluminum, which form stronger bonds with nitrogen than zinc does. The electrical properties of gallium-doped zinc oxynitride thin films and their respective devices demonstrate the carrier suppression effect accordingly.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.267-267
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• 2010

The continuous change in the electronic band structure of metal-adsorbed bilayer graphene was calculated as a function of metal coverage using first-principles calculations. Instead of modifying the unit cell size as a function of metal coverage, the distance between the metal atoms and bilayer graphene in the same $2{\times}2$ unit unit cell was controlled to change the total charges transferred from the metal atoms to bilayer graphene. The validity of the theoretical method was confirmed by reproducing the continuous change in the electronic band structure of K-adsorbed epitaxial bilayer graphene, as shown by Ohta et al. [Science 313, 951 (2006)]. In addition, the changes in the electronic band structures of undoped, n-type, and p-type bilayer graphene were studied schematically as a function of metal coverage using the theoretical method.

• Journal of Magnetics
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• 제21권1호
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• pp.1-5
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• 2016

We investigated the half-metallicity and magnetism at the (001) and (110) surfaces of CsSe in cesium chloride and zinc-blende structures by using the all-electron full-potential linearized augmented plane wave method within the generalized gradient approximation. From the calculated local density of states, we found that all the surfaces preserve the half-metallicity of the bulk structures. The surfaces with a greater polarity have stronger ferromagnetic properties when terminated with Se atoms; the non-polar surfaces do not change their electronic or magnetic properties considerably as compared with the bulk structures.

• Journal of Magnetics
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• 제14권1호
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• pp.1-6
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• 2009

The magnetic properties of ${Bi_x}{Ca_{1-x}}{MnO_3}$ for x = 0.12, 0.13, 0.14, 0.15, and 0.16 were examined by measuring magnetic susceptibility, resistivity and electron magnetic resonance at different temperatures. ${Bi_x}{Ca_{1-x}}{MnO_3}$ showed complicated magnetic structure that varies with temperature and composition, particularly around Bi composition x. 0.15. The aim of this study was to determine how the magnetic and physical properties of ${Bi_x}{Ca_{1-x}}{MnO_3}$ change in this region. In addition, first principles calculations of the magnetic phase of ${Bi_x}{Ca_{1-x}}{MnO_3}$ for x = 0, 0.125, 0.25 were carried out, and the spin state, electric and magnetic characteristics are discussed.

• Journal of Magnetics
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• 제4권4호
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• pp.107-110
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• 1999

In order to investigate the magnetism of Ru submonolayer on Pb(001), we have performed first-principles calculations for half-layer of Ru on Pd(001) using the full-potential linearzed augmented plane wave (FLAPW) method. We have found that the magnetic moment of Ru for 0.5 layer is 2.21 B. It is found that substrate Pd layers are polarized by the 0.5 Ru overlayer to have significant magnetic moments. Our results are compared with those obtained by the anomalous Hall effect. The calculated electronic structures, i,e., the spin densities and density of states are presented and discussed in relation with magnetic properties.

• EDISON SW 활용 경진대회 논문집
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• 제5회(2016년)
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• pp.373-376
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• 2016

Transition metal dichalcogenides (TMDs) such as $MoS_2$ is the thinnest semiconductor, exhibits promising prospects in the applications of optoelectronics, catalysis and hydrogen storage devices. Uniform and high quality $MoS_2$ is highly desirable in large area for its applications on commercial scale and fundamental research. Many experimental techniques i.e CVD have been developed to successfully synthesis $MoS_2$ on large scale, here in this work atomistic detail to understand the growth mechanism is addressed which was greatly overlooked. Here based on first principles calculation we found that polarity of seeding promter (crystal violet considerd in this work) controls the growth mechanism. It is also found that molybdenum destroys the precursor while sulfur adsorption with precursor is favorable.