• 한국결정성장학회지
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• 제16권1호
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• pp.32-37
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• 2006

희토류계 niobates인 $LaNbO_4$(Ln : Y, La, Gd)는 자체 발광형으로 $NbO^{3-}_4$ 이온의 전하 이동에 의한 넓은 띠의 청색 발광 스펙트럼을 410nm에서 나타낸다. 본 연구에서는 새로운 FED용 청색 및 적색 형광체를 개발하기 위하여 $LaNbO_4$ :X (X = Bi, Eu) 형광체를 합성하였으며, $1250^{\circ}C$에서 2시간 소성한 후 $1400^{\circ}C$에서 1시간 소성하였을 때 최대 발광피크를 얻을 수 있었다. 254nm의 여기하에서 $LaNbO_4$ : Bi는 $420\~450nm$ 영역에서 강한 청색 발광 스펙트럼을 나타내며 첨가된 $Bi^{3+}$ 이온 농도가 $1mol\%$일 때 최대 발광세기를 얻었다 $LaNbO_4$ : Eu의 경우는 첨가된 $Eu^{3+}$ 이온 농도가 $10mol\%$일 때 약 610nm에서 최대 적색 발광 스펙트럼을 나타내고 있다. $Eu^{3+}$ 이온 농도가 $10mol\%$ 이하에서는 $415\~460nm$, $530\~560nm$ 및 $570\~620nm$ 영역에서 피크가 관측되고 있다. 이들 형광체의 음극선 발광특성은 빛 발광 특성과 유사한 경향을 보였다.

• 대한치과보철학회지
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• 제36권5호
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• pp.772-785
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• 1998

This study was undertaken to clarify the microstructure of the different IPS Empress ingots by etching and to observe the change of leucite crystal structure according to subsequent heat treatment and the crystal distribution according to sprue types(${\phi}2.8mm$, single sprue; ${\phi}1.8mm$, double sprue) by scanning electron microscopy. IPS Empress T1, O1 ingots used for staining technique, and Dentin(A2) ingots used for layering technique were selected for this study. To observe the microstructures of these ingots before pressing, the specimens were prepared in splinters($3{\times}3{\times}3mm$) taken from the original ingots. And to estimate crystal distribution and microstructural change by sprue type and subsequent heat treatment. the specimens($3{\times}3{\times}3mm$) were heat-pressed through the two types of sprues with different diameters and numbers, and all specimens were fired according to the recommended firing schedule. The observed surface was ground with waterproof papers($#800{\sim}#1800$) on the grind polisher and was cleaned ultrasonically. All specimen were etched with 0.5% hydrofluoric acid. After etching, the surface was treated by ion sputter coating for SEM observation at an accelerating voltage of 20kV. In all specimens, the central area of ground surface was observed because there was less difference in microstructure between the peripheral area and the central area. The results were as follows ; 1. In the microstructure according to the ingot type, there was a wide difference between the staining (T1,O1) and layering(Dentin A2) ingots, but there was not a considerable difference between the T1 ingot and the O1 ingot for staining technique. 2. In all specimens, the crystal dispersion of IPS Empress ceramic using double sprue was significantly more scattered than that of IPS Empress ceramic using single sprue. The degree of scattering was strongest in the Dentin(A2) specimen and weakest in the O1 ingot. 3. In the microstructural change according to the subsequent heat treatment, all of ingots had some microcracks in the inside of the leucite crystal and the glass matrix after pressing. The inner splinters of the leucite crystal became smaller, and more microcracks occurred in the glass matrix due to increasing heat treatment times. 4. The size of leucite crystals varied from $1{\mu}m\;to\;5{\mu}m$. The mean size of mature crystals was about $5{\mu}m$. The form of the crystal was similar to a circle when it was smaller and similar to an ellipse when it was larger.

• 한국전기전자재료학회논문지
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• 제29권9호
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• pp.581-588
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• 2016

Piezoelectric thick films of a soft $Pb(Zr,Ti)O_3$ (PZT) based commercial material were produced by a conventional tape casting method. Thereafter, the interdigitated (IDT) Ag-Pd electrode pattern was printed on the $25{\mu}m$ thick piezoelectric film at room temperature. Co-firing of the 10-layer laminated piezoelectric thick films was conducted at $1,100^{\circ}C$ and $1,150^{\circ}C$ for 1 h, respectively. Piezoelectric cantilever energy harvesters were successfully fabricated using the IDT electrode pattern embedded piezoelectric laminates for 3-3 operation mode. Their energy harvesting characteristics were investigated with an excitation of 120 Hz and 1 g under various resistive loads (ranging from $10k{\Omega}$ to $200k{\Omega}$). A parabolic increase of voltage and a linear decrease of current were shown with an increase of resistive load for all the energy harvesters. In particular, a high output power of 3.64 mW at $100k{\Omega}$ was obtained from the energy harvester (sintered at $1,150^{\circ}C$).