• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.416-416
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• 2011

태양전지의 고효율화를 위해, 생성된 전자와 전공을 전극에서 효과적으로 수집하는 방법에 대한 연구가 많이 진행되고 있다. 태양전지 전면전극은 빛의 조사에 의해 생성된 전자를 수집하는 매체로써 finger width가 넓어질수록, 전자를 수집하기 쉬워진다. 하지만 finger width가 넓어짐에 따라, shadowing loss 증가에 의해 단락전류 밀도가 감소하여 태양전지 효율이 저하 될 수 있다. 본 연구에서는 스크린 프린팅에 의해 형성된 전면전극의 finger width를 기존의 $80{\mu}m$에서 $50{\mu}m$로 변경하고, double printing에 의해 finger height를 높이는 방법으로 태양전지의 효율을 향상 시키고자 하였다. 그 결과, 전극패턴 50에서는 전극패턴 80보다 0.47 단락전류밀도가 증가하였고, 효율(efficiency)은 0.16%가 증가하는 것을 확인할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.391-391
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• 2011

Crystalline silicon solar cell을 양산에 적용하기 위해 전면 전극의 패턴을 형성하는 방법으로 Ag paste를 이용한 screen printing이 가장 일반적으로 사용된다. 전면 전극의 패턴 형성 시, Finger의 width와 spacing은 Fill factor, JSC, VOC 등 태양전지의 중요 parameter들과 관련되어, 효율에 영향을 미치기 때문에, printing 시 Finger width와 spacing을 최적화하여 최대한의 효율을 내는 조건을 찾는 것이 바람직하다. 본 연구에서는 Finger width를 $30{\mu}m{\sim}100{\mu}m$, spacing을 $1.8{\mu}m{\sim}2.8{\mu}m$ 까지 가변하여 c-Si solar cell을 제작하였으며, 제작된 cell의 LIV를 측정을 통하여, 최적의 효율을 내는 조건을 찾고자 하였다. 그 결과 Finger width $30{\mu}m$, Finger spacing $1.8{\mu}m$의 조건에서 17.12%로 최고의 효율을 나타내었다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.7-12
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• 2008

In this study, the wide width effect that the increasing rate of drain current and the value of cutoff frequency decrease with larger finger number is observed. For modeling this effect, an improved SPICE MOSFET RF model that finger number-independent external source resistance is connected to a conventional BSIM3v3 RF model is developed. Better agreement between simulated and measured drain current and cutoff frequency at different finger number is obtained for the improved model than the conventional one, verifying the accuracy of the improved model for $0.13{\mu}m$ multi-finger MOSFET.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.581-582
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• 2006

In this paper, we investigate three different types of multi-fingered layout nMOSFET devices with varying $W_f$(unit finger width) and $N_f$(number of finger). Using layout modification, we improve $f_T$(current gain cutoff frequency) value of 15GHz without scaling down, and moreover, we decrease $NF_{min}$(minimum noise figure) by 0.23dB at 5GHz. The RF noise can be reduced by increasing $f_T$, choosing proper finger width, and reducing the gate resistance. For the same total gate width using multi-fingered layout, the increase of finger width shows high $f_T$ due to the reduced parasitic capacitance. However, this does not result in low $NF_{min}$ since the gate resistance generating high thermal noise becomes larger under wider finger width. We can obtain good RF characteristics for MOSFETs by using a layout optimization technique.

• Journal of the Korea Furniture Society
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• v.12 no.2
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• pp.1-10
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• 2001

As finger joint method has a high rate of yield and high strength and ease in working, it has been widely used as an end joint method for solid wood and wood based-material. Therefore, we end-joined the material of Pinus densiflora, Quercus variabilis and populus euramericana with polyvinyl acetate adhesive and resorcinol phenol resin adhesive. The effect of difference (0, 0.15, 0.3, 0.45mm) between the dimensions of tip width and root width of the finger (DTRW) on bending strength properties was as follows: 1. In the case of polyvinyl acetate adhesive, DTRW had no effect on bending modulus of elasticity(MOE) and modulus of rupture(MOR) of the three kinds of species, because their bonding layers were destroyed by slippage, not their woody parts. 2. In the case of resorcinol phenol resin adhesive, the material of Quercus variabilis showed an optimal result at 0.15 or 0.3 of DTRW, while the poplar did at 0 of DTRW 3. The differences in efficiency ratio of bending MOR of populus euramericana, Pinus densiflora and Quercus variabilis species according to the kind of adhesive were 13-29%, 23-30% and 45-53%, respectively.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.389-390
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• 2008

The dependence of $f_T$ and $f_{max}$ on the unit finger width is measured and analyzed for $0.13{\mu}m$ MOSFETs. The increase of $f_T$ at narrow width is attributed by the parasitic gate-bulk capacitance, and the decrease of $f_T$ at wide width is generated by the reduction of increasing rate of $g_{mo}$. The increase of $f_{max}$ at narrow width is originated from the abrupt reduction of gate resistance due to the non-quasi-static effect. These analysis results will be valuable information for layout optimization to improve $f_T$ and $f_{max}$.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.41 no.5
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• pp.365-372
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• 2017

Finger electrodes on a crystalline silicon solar cell are required to be constructed as narrow and thick as possible in order to minimize shading losses and electrical resistance. The most common means to construct high-aspect ratio finger electrodes has been screen-printing, but it has difficulty achieving fine finger electrodes because the as-printed finger width is generally wider by 1.3-2.2 times the screen opening width. Consequently, it requires an extremely small screen opening (below $30{\mu}m$) in order to achieve a finger width below $40{\mu}m$. However, the use of such a small screen opening could result in various problems, such as high printing pressure, defective transport of silver paste, and high electrical resistance due to unfavorable mesh marks left on the finger electrodes. In this study, dispensing printing with a screw pump is introduced as an alternative to conventional screen-printing and its unique traits in the front side metallization of crystalline silicon solar cells is discussed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.9
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• pp.21-25
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• 2008

In this study, to maximize RF performance of MOSFETs, $f_T$ and $f_{max}$ dependent data on $W_u$ are measured and newly analyzed by extracting small-signal model parameters. From the physical analysis results, it is found that a peak value of $f_T$ is generated by $W_u$-independent parasitic gate-bulk capacitance at narrow $W_u$ and the wide width effect of reducing the increasing rate of transconductance at wide $W_u$. In addition, it is revealed that a maximum value of $f_{max}$ is caused by the non-quasi-static effect that the gate resistance is greatly reduced at narrow $W_u$ and becomes constant at wide $W_u$.

• Science of Emotion and Sensibility
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• v.13 no.4
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• pp.769-776
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• 2010

The relationship between morphological characteristics and sensibility of hands for beautiful hands were investigated for college woman in early twenties. Hand Emotional Quotient (HEQ) which is classified as 10 grades was newly suggested as one of the sensibility evaluation methods for the beautiful hands and was applied to assess the qualitative and quantitative relationships between morphological characteristics and HEQ. The factors influenced on the HEQ were in order as width-length ratio of hands, finger length-hand length and finger width-hand length ratios. Otherwise the influences of hand length-nail length and finger length-nail length ratios on HEQ were insignificant. The longer length of hand, finger, and nail and the narrower width of hand and finger, the higher HEQ hands get. In conclusion, it is found that all morphologic characteristics of hands influenced on the sensitivity synthetically. The data constructed on the hand's sensibility is very useful for various beauty products and service areas related to hands.

• Journal of Digital Convergence
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• v.12 no.7
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• pp.291-296
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• 2014

Inserting a $SiO_2$ layer underneath the p-pad electrode as the current blocking layer (CBL) structure and extending p-metal finger patterns, the GaN LEDs using an indium-tin-oxide (ITO) layer show the improved light output intensity, resulting from better current spreading and reduced light loss on the surface of p-pad metal. The LEDs with an oxide layer of $100{\mu}m$-pad-width and $6{\mu}m$-finger-width have better light output intensities than those with an oxide layer of $105{\mu}m$-pad-width and $12{\mu}m$-finger-width. Using the ATLAS device simulator from Silvaco Corporation, the current density distributions on the active layer in CBL LEDs have been investigated.