• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.917-920
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• 2001

Effects of addition of manganese and final reduction on segregation behavior of sulfur and final mangetic induction during final annealing have been investigated in the 300 ppm sulfur-contained 3% silicon-iron alloy strips with or without manganese. At the same concentration of sulfur, lower final reduction is favorable for final Goss texture. This is because the probability that the initial Goss grains survive under the highly segregated sulfur atmosphere and grow selectively within the segregated sulfur-free time range becomes higher. In the case of 3% silicon-iron with manganese, much lower magnetic induction was obtained, although the weak final reduction of 30% is given to the alloy, comparative to the 40%. This is because MnS particles acted as an reducer in the primary grain size.

• Proceedings of the Korean Nuclear Society Conference
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• 2003.05a
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• pp.234.2-234.2
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• 2003

• Proceedings of the Korean Nuclear Society Conference
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• 2002.10a
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• pp.255-255
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• 2002

• Proceedings of the Korean Nuclear Society Conference
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• 2002.10a
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• pp.256-256
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• 2002

• Proceedings of the Korean Nuclear Society Conference
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• 2002.10a
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• pp.258-258
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• 2002

• Journal of Information Display
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• v.4 no.4
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• pp.1-3
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• 2003

For excimer laser annealing (ELA), energy density, number of pulses, beam uniformity, and condition of initial amorphous Si (a-Si) films are significant factors contributing to the final microstructure and the performance of low-temperature polycrystalline Si (LTPS) TFTs. Although the process and equipment have been significantly improved, the environmental factors associated with initial amorphous Si (a-Si) films and process conditions are yet to be optimized.

• Korean Journal of Materials Research
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• v.14 no.7
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• pp.451-456
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• 2004

Thermal creep properties of the zirconium tube which was developed for high burnup application were evaluated. The creep test of cladding tubes after various final heat treatment was carried out by the internal pressurization method in the temperature range from $350^{\circ}C to 400^{\circ}C$ and from 100 to 150 MPa in the hoop stress. Creep tests were lasted up to 900days, which showed the steady-state secondary creep rate. The creep resistance of zirconium claddings was higher than that of Zircaloy-4. Factors that affect creep resistance, such as final annealing temperature, applied stress and alloying element were discussed. Tin as an alloying element was more effective than niobium due to solute hardening effect of tin. In case of advanced claddings, the optimization of final heat treatment temperature as well as alloying element causes a great influence on the improvement of creep resistance.

• Korean Journal of Metals and Materials
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• v.49 no.1
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• pp.17-24
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• 2011

To investigate the relationship between heat treatment in zirconium alloy tubing process and metallurgical characteristics of Zr-1Nb-0.69Sn-0.11Fe alloy tubes, mechanical and oxidation behaviors of tubes heat treated at different temperatures after the final pilgering were investigated. The stress strain curves exhibited the saturation behaviors in all heat treatment conditions ($460{\sim}600^{\circ}C$) in this study with the onset strain of saturation increased with increase of post-pilgering annealing temperature. The strength fell off rapidly with increasing annealing temperature. The ultimate strength of the low tin Zr-1Nb-0.69Sn-0.11Fe alloy with slightly higher iron and oxygen contents in this study was found to be higher than Zr-1Nb-1Sn-0.1Fe alloy. The oxidation experiments in steam condition revealed that the corrosion resistance of low tin Zr-1Nb-0.69Sn-0.11Fe alloy was better than the Zr-1Nb-1Sn-0.1Fe alloy with a higher Sn content. The weight gain of low tin Zr-1Nb-0.69Sn-0.11Fe alloy tubes gradually increased with the increasing annealing temperature possibly due to the decreased Nb content in the matrix because of the formation of ${\beta}-Nb$ particles.

• Management Science and Financial Engineering
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• v.10 no.2
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• pp.73-87
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• 2004

Automotive and aircraft assembly process rely on fixtures to support and coordinate parts and subassemblies. Fixture layout in multi-station panel assemblies has a direct dimensional effect on final products and thus presents a quality problem. This paper describes a methodology for fixture layout design in multi -station assembly processes. An optimal fixture layout improves the robustness of a fixture system against environmental noises, reduces product variability, and eventually leads to manufacturing cost reduction. One of the difficulties raised by multi-station fixture layout design is the overwhelmingly large number of design alternatives. This makes it difficult to find a global optimality and, if an inefficient algorithm is used, may require prohibitive computing time. In this paper, simulated annealing is adopted and appropriate parameters are selected to find good fixture layouts. A four-station assembly process for a sport utility vehicle (SUV) side frame is used throughout the paper to illustrate the efficiency and effectiveness of this methodology.

• Journal of the Korean Ceramic Society
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• v.36 no.6
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• pp.604-610
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• 1999

Silicide layer structures and morphology degradation of the surface and interface of the silicide layers for he Co/refractory metal bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The CoSi-CoSi2 phase transition temperature is lower an morphology degradation of the silcide layer occurs more severely for the Co/refractorymetal bilayer on the P-doped polycrystalline Si substrate than on the single Si substrate. Also the final layer structure and the morphology of the films after silicidation annealing was found to depend strongly upon the interlayer metal. The layer structure after silicidation annealing of Co/Hf/doped-poly Si is Co-Hf alloy/polycrystalline CoSi2/poly Si substrate while that of Co/Nb is polycrystalline CoSi2/NbSi2/polycrystalline CoSi2/poly Si.