• Nuclear Engineering and Technology
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• v.41 no.2
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• pp.149-154
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• 2009

The microstructure, the corrosion behavior and the oxide properties were examined for Zr-1.5Nb-0.4Sn-0.2Fe-0.1Cr (HANA-4) alloys which were subjected to two different final annealing temperatures: $470^{\circ}C$ and $570^{\circ}C$. HANA-4 was shown to have $\ss$-enriched phase with a bcc crystal structure and Zr(Nb,Fe,Cr)$_2$ with a hcp crystal structure with $\ss$-enriched phase being more frequently observed compared with Zr(Nb,Fe,Cr)$_2$. The corrosion rate of HANA-4 was increased with an increase of the final annealing temperature in the PWR-simulating loop, $360^{\circ}C$ pure water and $400^{\circ}C$ steam conditions, which was correlated well with a reduction in the size of the columnar grains in the oxide/metal interface region. The oxide growth rate of HANA-4 was considerably affected by the alloy microstructure determined by the final annealing temperature.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.251-258
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• 1996

Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

• Transactions on Electrical and Electronic Materials
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• v.9 no.4
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• pp.137-142
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• 2008

The parasitic resistance is studied to silicon/metal contact junction for improving device performance and to lower contact/serial resistance silicide in natural sequence. In this paper constructs the stepwise Ni silicide process for parasitic resistance reduction for silicon/metal contact junction. We have investigated multi-step Ni silicide on SiGe substrate with stepwise annealing method as an alternative to compose more thermally reliable Ni silicide layer. Stepwise annealing for silicide formation is exposed to heating environment with $5^{\circ}C/sec$ for 10 seconds and a dwelling for both 10 and 30 seconds, and ramping-up and the dwelling was repeated until the final annealing temperature of $700\;^{\circ}C$ is achieved. Finally a direct comparison for single step and stepwise annealing process is obtained for 20 nm nickel silicide through stepwise annealing is $5.64\;{\Omega}/square$ at $600\;^{\circ}C$, and it is 42 % lower than that of as nickel sputtered. The proposed stepwise annealing for Ni silicidation can provide the least amount of NiSi at the interface of nickel silicide and silicon, and it provides lower resistance, higher thermal-stability, and superior morphology than other thermal treatment.

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1101-1108
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• 1996

No-doped PZT thin films have been fabricated on Pt/Ti/SiO2/Si substrate using Sol-Gel technique. A fast annealing metho (three times of intermediate and final annealing) was used for the preparation of multi-coated 1800$\AA$ thick Nb-doped PZT thin films. As Nb doping percent was increased leakage current was lowered approximately 2 order but dielectic properties were degraded due to the appearance of pyrochlore phase and domain pinning. Futhermore the increase of the final annealing temperature up to 74$0^{\circ}C$lowered the pyrochlore phase content resulting in enhancing the dielectric properties of the Nb doped films. The 3%-Nb doped PZT thin films with 5% excess Pb showed a capacitance density of 24.04 fF/${\mu}{\textrm}{m}$2 a dielectric loss of 0.13 a switchable polarization of 15.84 $\mu$C/cm2 and a coercive field of 32.7 kV/cm respectively. The leakage current density of the film was as low as 1.47$\times$10-7 A/cm2 at the applied voltage of 1.5 V.

• The KIPS Transactions:PartB
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• v.14B no.5
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• pp.377-382
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• 2007

This paper proposes a training algorithm for global optimization of the parameters of radial basis function networks. Since conventional training algorithms usually perform only local optimization, the performance of the network is limited and the final network significantly depends on the initial network parameters. The proposed hybrid simulated annealing algorithm performs global optimization of the network parameters by combining global search capability of simulated annealing and local optimization capability of gradient-based algorithms. Via experiments for function approximation problems, we demonstrate that the proposed algorithm can find networks showing better training and test performance and reduce effects of the initial network parameters on the final results.

• ETRI Journal
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• v.32 no.6
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• pp.932-939
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• 2010

In this paper, a fast migration method is proposed. Our method executes local relocation on a model placement where an additional module is added to it for modification with a minimum number of displacements. This method is based on mean-field annealing (MFA), which produces a solution as reliable as a previously used method called simulated annealing. The proposed method requires substantially less time and hardware, and it is less sensitive to the initial and final temperatures. In addition, the solution runtime is mostly independent of the size and complexity of the input model placement. Our proposed MFA algorithm is optimized by enabling module rotation inside an energy function called permissible distances preservation energy. This, in turn, allows more options in moving the engaged modules. Finally, a three-phase cooling process governs the convergence of problem variables called neurons or spins.

• Journal of Powder Materials
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• v.3 no.1
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• pp.13-24
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• 1996

Two grades of Permalloy strips, Fe-45Ni(PB) and Fe-78Ni-4Mo-5Cu(PC) were fabricated by powder rolling process from elemental powder mixtures. The roll compacted green strips were sintered, homogenized, cold rolled with or without an intermediate annealing and finally heat treated to measure magnetic properties. For a given thickness reduction, rolling with an intermediate annealing was found more effective to achieve a full densification with no visible micropores and also to obtain better magnetic properties. Increasing the final rolling reduction also produced a marked improvement of the magnetic properties whereas the cooling rate during the final heat treatment has little effect in both grades. Addition of a small amount, 0.4% Mn slightly degraded the properties. As an overall, The PM strips produced via powder rolling yielded the similar soft magnetic properties to the corresponding commercial grades produced via wrought processing.

• Nuclear Engineering and Technology
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• v.53 no.1
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• pp.172-177
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• 2021

The microstructure and texture of three 316L foils of 25 ㎛ thickness, which were subjected to different manufacturing process, were systematically characterized using advance analytical techniques. Then, the electrochemical property of the 316L foils in simulated pressurized water reactor (PWR) solution was analyzed using potentiodynamic polarization. The results showed that final rolling strain and annealing temperature had evident effect on grain size, fraction of recrystallization, grain boundary type and texture distribution. It was suggested that large final rolling strain could transfer Brass texture to Copper texture; low annealing temperature could limit the formation of preferable orientations in the rolling process to reduce anisotropy. Potentiodynamic polarization test showed that all samples exhibited good corrosion performance in the simulated primary PWR solution.

• Korean Journal of Metals and Materials
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• v.47 no.8
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• pp.474-481
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• 2009

The effects of final heat treatment on the mechanical and corrosion properties of a Zr alloy strip incorporating Nb were investigated. The chemical composition of the strip was Zr-1.49Nb-0.38Sn-0.20Fe-0.11Cr, and strip specimens were subjected to final heat treatment in a temperature range of $580{\sim}700^{\circ}C$. Tensile tests at room temperature and $316^{\circ}C$, along with corrosion tests in a simulated PWR loop and a 70 ppm LiOH solution environment at $360^{\circ}C$, were performed on the specimens. The mechanical properties of the strip were saturated when the specimens received final heat treatment at an elevated temperature of more than $640^{\circ}C$. However, the corrosion resistance of the strip in the simulated PWR loop and in the 70 ppm LiOH solution environment was improved with a decrease of the final annealing temperature. It is recommended that the alloy strip be finally heat-treated at a temperature of less than $620^{\circ}C$ for longer than 10 minutes in order to obtain fully recrystallized microstructures, and thereby attain enlarged tensile elongation, and to prevent the precipitation of ${\beta}-Zr$, which is known to deteriorate the corrosion resistance.

• Journal of the Korean Ceramic Society
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• v.33 no.6
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• pp.665-671
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• 1996

Ferroelectric Pb(Fe1/2Nb1/2)O3 thin films were successfully fabricated on ITO/Glass substrate by sol-gel proces-sing and characterized to determine the dielectric and electric properties. Viscosity of PEN sol measured to investigate rheological properties was 3.25 cP which was proper for coating. The sol also showed Newtonian behavior. RTA(Rapid Thermal Annealing) was used for the annealing of the thin film and 1200~1700$\AA$ thick PEN thin films were fabricated by repeating the intermediate and the final annealing. After the deposition of Pt as top electrode by vacuum evaporation dielectric and electric properties were measured. Dielectric properties of FFN thin film were enhanced by increasing the perovskite phase fraction with increasing the annealing temperature. Measured dielectric constant of 1700$\AA$ PFN thin film annealed at $650^{\circ}C$ was 890 at 1kHz Capacitatnce density and dielectric loss were 47 fF/${\mu}{\textrm}{m}$2 and 0.47 respectively. As a result of measuring Curie temperature PFN thin films had Curie point with a rang of 110~12$0^{\circ}C$ and showed broad dielectric peak at that point. Leakage current of the PFN thin films were increased with increasing the annealing tempera-ture.