• Corrosion Science and Technology
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• v.3 no.4
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• pp.172-177
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• 2004

Biaxially oriented polyethylene terephthalate copolymer(BO - PET)film laminated aluminiums have been applied for chip condenser case. The BO PET film is characterized by high molecular which gives high corrosion resistance, good adhesion and high heat resistance. The higher orientation lowers formability of the film. So, optimum orientation has to be controlled during the laminating process. And to confirm the adhesion between BO PET and aluminium and to guarantee the formability of PET laminated aluminums, we have controlled the chromium oxides weight on the aluminium and laminating condition ( laminating temperature, soaking temperature and lag time after nip roll and quenching conditions) This paper discusses the effect of the laminating conditions on the formability of laminated aluminums. As results, it is clear that the orientation of the BO PET film decreased with an increase in the strip temperature. When the film temperature is over the melting point of the film, its orientation drastically decreased.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2014.11a
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• pp.61-62
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• 2014

To evaluate anti-corrosion performance of high-frequency arc metal spray film in accordance with metal type and epoxy sealing coat application status, electrochemical impedance spectroscopy(EIS) method was conducted in this study. As a result, in case of applying Al-Mg alloy metal spray film, it showed the best polarization resistance. In case of applying epoxy sealing coat, it showed increased polarization resistance of arc metal spray film. Through this experiment, it is judged that Al-Mg alloy arc metal spray film with epoxy sealing coat can increase the biggest anti-corrosion performance of high-frequency arc metal spray film on steel.

• Korean Journal of Metals and Materials
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• v.49 no.2
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• pp.192-196
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• 2011

The multi-layered thin film with an ITO/Ag/ITO structure was produced on PET by using magnetron reactive sputtering method. First, 30 nm of ITO thin film was coated on PET by using normal temperature process. Then 20-52 nm of the Ag thin film was coated. Lastly, 30 nm of ITO thin film was coated on Ag layer. The sample of the 20 nm Ag thin film showed more than 70% transmission and a $2.7{\Omega}/{\Box}$ sheet resistance. When compared to the existing single-layered transparent conducting thin film, multi-layered film was found to be superior with about $5{\Omega}/{\Box}$ less sheet resistance. However, since the Ag layer became thinner, the band gap energy needs to be increased to more than 3.5 eV.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.481-482
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• 2006

We fabricated pentacene organic thin film transistor with good uniformity. And we extracted contact resistance in organic thin film transistors from the plot of the inverse of drain current versus channel length by extrapolating the curve to a channel length of zero, and multiplying by drain-source voltage. Extracted contact resistance is about $70K{\Omega}$ at gate-drain voltage of -20 V

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1331-1332
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• 2007

In the present works, we investigate the thermal characteristics on Ag/$As_{2}S_{3}$ and Ag/$As_{40}Ge_{10}Se_{15}S_{35}$ amorphous chalcogenide thin film structure for PMC (Programmable Metallization Cell).As the results of resistance change with the temperature on Ag/$As_{40}Ge_{10}Se_{15}S_{35}$ amorphous chalcogenide thin film, the resistance was abruptly dropped from the initial resistance of 1.32 M ${\Omega}$ to the saturated value of 800 ${\Omega}$ at $203^{\circ}C$. On the other hand, the resistance increased to 1.3 $M{\Omega}$ at $219^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.4
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• pp.272-275
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• 2019

We investigated the electrical characteristics of amorphous silicon-zinc-tin-oxide (a-SZTO) thin films deposited by RF-magnetron sputtering at room temperature depending on the deposition time. We fabricated a thin film transistor (TFT) with a bottom gate structure and various channel thicknesses. With increasing channel thickness, the threshold voltage shifted negatively from -0.44 V to -2.18 V, the on current ($I_{on}$) and field effect mobility (${\mu}_{FE}$) increased because of increasing carrier concentration. The a-SZTO film was fabricated and analyzed in terms of the contact resistance and channel resistance. In this study, the transmission line method (TLM) was adopted and investigated. With increasing channel thickness, the contact resistance and sheet resistance both decreased.

• Korean Journal of Materials Research
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• v.29 no.7
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• pp.408-411
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• 2019

ZTO/n-Si thin film is produced to investigate tunneling phenomena by interface characteristics by the depletion layer. For diversity of the depletion layer, the thin film of ZTO is heat treated after deposition, and the gpolarization is found to change depending on the heat treatment temperature and capacitance. The higher the heat treatment temperature is, the higher the capacitance is, because more charges are formed, the highest at $150^{\circ}C$. The capacitance decreases at $200^{\circ}C$ ZTO heat treated at $150^{\circ}C$ shows tunneling phenomena, with low non-resistance and reduced charge concentration. When the carrier concentration is low and the resistance is low, the depletion layer has an increased potential barrier, which results in a tunneling phenomenon, which results in an increase in current. However, the ZTO thin film with high charge or high resistance shows a Schottky junction feature. The reason for the great capacitance increase is the increased current due to tunneling in the depletion layer.

• Journal of Advanced Marine Engineering and Technology
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• v.34 no.5
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• pp.670-677
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• 2010

There are many surface protection methods for numerous steel structures being used under severely corrosive environment, one of them, metallizing(thermal spray) is a available protection method which is comparatively and recently developed for surrface protection of various steel structures. However coating film obtained by spraying is to be needed increasingly more good corrosion resistance due to accelerating of environmental contamination. In this study, coating films(DFT:$200{\mu}m$) are performed with arc spray by wire metal and their types of films are pure zinc, pure aluminum, alloy film(Al:Zn=85:15) and alloy film(Al:Zn=95:5). And corrosion resistance of their films was investigated with electrochemical methods in seawater solution. Pure aluminum film showed a relatively somewhat good corrosion resistance compared to among those of other films and alloy films also showed a good corrosion resistance compared to pure zinc film. Especially it was observed that pure aluminum film showed a comparatively good corrosion resistance than that of alloy film named as galvarium spray(Al:Zn=85:15) in seawater solution. Morphology of corroded surface of pure zinc film appeared the pattern like intergranlar corrosion, however films of pure aluminum and alloy metal showed a general corrosion pattern.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.913-917
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• 2003

In the electronic components and devices fabrication, thin film resistors with low TCR(temperature coefficient of resistance) and high precision have been used over 3 GHz microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because it has low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of s-type with excellent resistors properties by RF-sputtering. Also we reported best deposited conditions of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to deposited conditions(between target and substrate, power supply)

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.3
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• pp.451-456
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• 2021

In order to improve the cell capacitance and scale down in capacitors of semiconductor memory devices, a stacked ONO structure has been introduced as a dielectric layer and thinning of these layers has been attempted continuously. However, many problems have emerged in the manufacturing process. In this study, L/L LPCVD system was used to suppress the growth of natural oxide film of about 10 Å, which was able to secure the capacitance of 3fF / cell. In addition, we investigated the effect of thinning of the dielectric film on the abnormal oxidation of the nitride film, and proposed a stable process control method for forming the dielectric film to ensure oxidation resistance.