• 제목/요약/키워드: film resistance

검색결과 2,218건 처리시간 0.034초

Investigation of Functional 6061 Aluminum Alloy Oxide Film with Anodization Voltage and its Corrosion Resistance

  • Jisoo Kim;Chanyoung Jeong
    • Corrosion Science and Technology
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    • 제22권6호
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    • pp.399-407
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    • 2023
  • This study investigated the formation of oxide films on 6061 aluminum (Al) alloy and their impacts on corrosion resistance efficiency by regulating anodization voltage. Despite advantageous properties inherent to Al alloys, their susceptibility to corrosion remains a significant limitation. Thus, enhancing corrosion resistance through developing protective oxide films on alloy surfaces is paramount. The first anodization was performed for 6 h with an applied voltage of 30, 50, or 70 V on the 6061 Al alloy. The second anodization was performed for 0.5 h by applying 40 V after removing the existing oxide film. Resulting oxide film's shape and roughness were analyzed using field emission-scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Wettability and corrosion resistance were compared before and after a self-assembled monolayer (SAM) using an FDTS (1H, 1H, 2H, 2H-Perfluorodecyltrichlorosilane) solution. As the first anodization voltage increased, the final oxide film's thickness and pore diameter also increased, resulting in higher surface roughness. Consequently, all samples exhibited superhydrophilic behavior before coating. However, contact angle after coating increased as the first anodization voltage increased. Notably, the sample anodized at 70 V with superhydrophobic characteristics after coating demonstrated the highest corrosion resistance performance.

수소흡수시 Pd 박막 시료의 두께 변화에 따른 전기저항의 변화 (Change of Electrical Resistivity of PdH film as a Function of Film Thickness)

  • 조영신
    • 한국수소및신에너지학회논문집
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    • 제10권3호
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    • pp.171-175
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    • 1999
  • 진공 증착 방법으로 제작한 Pd박막(두께 $180{\sim}670{\AA}$)에 상온에서 수소기체를 흡수-방출시킬 때의 전기저항값의 변화를 측정하였다. 저항값 변화의 최대값은 시료의 두께에 따라서 달라졌다. $({\Delta}R_{\infty}/R_0)_{{\beta}min}$ 값은 $\670{\AA}$ 시료는 0.61이었으며, $\180{\AA}$ 시료는 0.34 이었다. 같은 두께의 시료일 경우 시료의 제작 조건에 따라 저항값의 변화는 다른 경향을 보였다.

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Enhancement of the Water-resistance and Physical Properties of Sodium Alginate Film

  • Kim, Eun-Jung;Kim, Byung-Yong;Rhim, Jong-Whan
    • Food Science and Biotechnology
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    • 제14권1호
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    • pp.108-111
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    • 2005
  • To improve water-resistance and physical properties of sodium alginate film, effects of sodium alginate and plasticizer concentrations, divalent cation types and concentrations, and immersion time of films into divalent cation solutions on sodium alginate films were evaluated, based on elongation strength (ES), elongation rate (E), water vapor permeability (WVP), and water solubility (WS). Film made from 1.5% sodium alginate solution (w/w) had low WVP and WS, which are optimal characteristics for application of film preparation. Addition of plasticizer increased E and WS. Less than 2% $CaCl_2$ addition and 15min immersion time reduced WVP, WS, and E significantly (p<0.05). Sodium alginate films treated with $CuCl_2$, and $ZnCl_2$ solutions had lower WVP and WS, whereas $MgCl_2$ had no influence on improving water resistance of films.

열교환 부품용 발열체 형성기술 (The Formation Technique of Thin Film Heaters for Heat Transfer Components)

  • 조남인;김민철
    • 반도체디스플레이기술학회지
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    • 제2권4호
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    • pp.31-35
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    • 2003
  • We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.

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Annealing에 의한 나노구조 박막의 전기적 특성 연구 (Annealing Effects on Electron Transport properties of Nanostructured Thin Film)

  • 고태준
    • 한국자기학회지
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    • 제16권1호
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    • pp.98-101
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    • 2006
  • 결정립으로 이루어 진 나노구조 Pb 박막의 전기적 특성을 정상 면저항 측정을 통하여 연구하였다. 나노구조 박막은 저온 상의기판 위에 10nm이하의 두께로 증착되었으며, 1.3K부터 상온까지 박막의 온도를 변화시키면서 정상 면저항의 변화를 측정하였다. 열처리 온도에 따라 정상 면저항은 비 단조적하며 비가역적인 변화를 보였으며, 이러한 변화들은 열처리에 따른 나노구조 박막을 구성하고 있는 Pb 결정립의 크기변화로써 이해할 수 있다.

탄산 에틸렌계 용액 중에서 생성되는 흑연 음극 표면피막의 형상 및 저항에 미치는 충방전 속도의 영향 (Effects of Charge-discharge Rate on Morphology and Resistance of Surface Film on a Graphite Negative Electrode in an Ethylene Carbonate-based Solution)

  • 정순기;김보겸
    • 한국수소및신에너지학회논문집
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    • 제24권2호
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    • pp.179-185
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    • 2013
  • The behavior of surface film formation was greatly dependent on the speed of potential cycling. In $LiClO_4$ / EC + DEC, cyclic voltammetry results showed that the peaks originated from surface film formation on graphite electrode at the high charge-discharge rate was shifted to the lower potentials as the charge-discharge rate decrease. This indicates that surface films with different morphology and thickness were formed by different charge-discharge rate. Transmission electron microscopy (TEM) results indicated that the properties such as thickness and morphology of the surface film were greatly affected by the charge-discharge rate. Electrochemical impedance spectroscopy (EIS) showed that the resistance of surface film was affected by the speed of potential cycling. In addition, the charge transfer resistance was also dependent on the charge-discharge rate indicating that the charge transfer reaction was affected by the nature of surface film. TEM and EIS results suggested that the chemical property as well as the physical property of the surface film was affected by the charge-discharge rate.

인-라인 마그네트론 스퍼터링 방법에 의한 고전도성 ITO/Ag/i-ZnO 투명전극 (High Conductive Transparent Electrode of ITO/Ag/i-ZnO by In-Line Magnetron Sputtering Method)

  • 김성용;권상직
    • 반도체디스플레이기술학회지
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    • 제14권3호
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    • pp.33-36
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    • 2015
  • It has increased several decades in the field of Indium Tin Oxide (ITO) transparent thin film, However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials[1]. So far, in order to overcome this disadvantage, we show that a transparent ITO/Ag/i-ZnO multilayer thin film electrode would be more cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report the properties of ITO/Ag/i-ZnO multilayer thin film by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately $40{\Omega}/{\Box}$ at same visible light transmittance. (minimal point $5.2{\Omega}/{\Box}$). Tendency, which shows lowly sheet resistive in a certain transmittance, has been observed, hence, it should be suitable for transparent electrode device.

Corrosion Behavior of Hard Coated Ti-Zr-N Film on the Tool Steels

  • Eun, Sang-Won;Choe, Han-Cheol
    • Corrosion Science and Technology
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    • 제9권6호
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    • pp.289-293
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    • 2010
  • To investigate the corrosion behavior of tools steel surface in various coating film, the surface of hard coated Ti-Zr-N film on the tool steel by using magnetron-sputtering methods was researched using various experimental methods. STD 61 steels were manufactured by using vacuum furnace and solutionized for 1hr at $1050^{\circ}C$. Steel surface was coated with Ti-Zr-N film at $150^{\circ}C$ and 100W for 1h by using DC-sputtering equipment. Surface characteristics of Ti-Zr-N film coated specimens were investigated by OM, XRD, FE-SEM and nano-scratch tester. And corrosion behaviors of the coated specimen were investigated by polarization test and electrochemical impedance spectroscopy(EG&G Co, PARSTAT 2273. USA). It was found that Ti-Zr-N film coated sample had a thick coated layer and showed a good wear resistance and corrosion resistance of surface compared with ZrN and TiN coated sample. The corrosion resistance and mechanical property of Ti-Zr-N film coated STD 61 alloy increased as sputtering time increased.

전도성 흑연을 포함하는 발열 필름의 열적 특성 (Thermal Characteristics of Heating Films Including Conductive Graphite)

  • 최규연;오원태
    • 한국전기전자재료학회논문지
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    • 제33권6호
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    • pp.500-504
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    • 2020
  • Heating films were prepared with composites of poly (methyl methacrylate) and conductive graphite. The as-prepared composite was deposited on a PET film and then fabricated using a bar coater to produce a film with uniform thickness. Copper electrodes were attached to both ends of the as-prepared film, and the heating characteristics of the film were analyzed while applying a DC voltage. The electrical conductivity and heating temperature of the heating films depended on the size, structure, content, and the dispersion characteristics of the graphite in the composite. The thermal energy was adjusted by controlling the electrical energy, based on the Joule heating theory. The electrical resistance of the film was altered in proportion to Ohm's law, and the heating temperature was changed according to the structure of the film (interelectrode spacing or electrode length) and the conductive graphite content. When the content of conductive graphite in the film increases, the electrical resistance decreases, and the heating temperature increases; however, there is no significant change above a certain content (50%).

Characteristics of AlW thin film for TFT-FCD bus line

  • Kim, Dong-Sik;Yi, Chong-Ho;Chung, Kwan-Soo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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    • pp.58-58
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    • 2000
  • Recently low resistance of bus line is required for large screen size RFT-CLD panels. As a result, lower resistance Al-alloy is currently reviewed extensively. The resistivity is required smaller than 10$\mu$$\Omega$cm and high resistance of chemical attack is required. In this paper, Al-W thin film were deposited on glass substrates by D.C magnetron sputtering system under various condition for high chemical resistance. Its properties were characterized by SEM, AFM, XRD, 4-point-probe, and cyclic voltammertry. The optimal condition of Al-W was 10$0^{\circ}C$, 100W, 0.4Pa, 23sccm(Ar) and 35$0^{\circ}C$, 20min. annealing. At that condition the resistivity of Al-W(3 wt.%) was about 11$\mu$$\Omega$cm. And when wt.% of W in Al-W alloy was higher than about 4%, Al-W alloy thin film has high chemical resistance.

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