• Title/Summary/Keyword: film properties

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Basic and Mechanical Properties by Film Type to Minimize the Sound Pressure Level of PTFE Laminated Vapor-permeable Water-repellent Fabrics (PTFE(Polytetrafluoroethylene) 라미네이팅 투습발수직물의 총음압 최소화를 위한 필름 타입 별 기본 특성과 역학 특성)

  • Lee, Kyu-Lin;Lee, Jee-Hyun;Jin, Eun-Jung;Yang, Youn-Jung;Cho, Gil-Soo
    • Fashion & Textile Research Journal
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    • v.14 no.4
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    • pp.641-647
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    • 2012
  • This study investigates the sound properties of fabric frictional sound (SPL, ${\Delta}L$, ${\Delta}f$) according to the film type of PTFE laminated vapor-permeable water-repellent fabrics in order to understand the relationship between SPL and the basic properties of fabrics such as layer, yarn type, and thickness of fiber. This study accesses their mechanical properties and determines how to control them to minimize SPL. Eight PTFE laminated water-repellent fabrics, composed of four different film types (A, B, C, D) and with two different fabrics, were used as test specimens. Frictional sounds generated at 1.21m/s were recorded by using a fabric sound generator and SPLs were analyzed through Fast Fourier Transformation (FFT). The mechanical properties of fabrics were measured by KES-FB. The SPL value was lowest at 74.4dB in film type A and highest as 85.5dB in type D. Based on ANOVA and post-hoc test, specimens were classified into less Loud Group (A, B) and Loud Group (C, D). It was shown that SPL was lower when 2 layer (instead of 3 layer), filament yarn than staple, and thin fiber than thick were used. In Group I, shearing properties (G, 2HG5), geometrical roughness (SMD), compressional properties (LC, RC) and weight (W) showed high correlation with SPL however, elongation (EM) and shear stiffness (G) did with SPL in Group II.

A Study on the Stacked type Film Chip Capacitor (적층형 필름 Chip Capacitor 개발)

  • 송호근;박상식;연강흠;김성호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1991.10a
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    • pp.73-78
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    • 1991
  • In this study of stacked type film chip capacitor, the important parameters are heat-treated temperature, pressure and time. We measured the temperature dependence of dielectric properties and dissipation factor and the frequency dependence of dielectric properties, dissipation factor, ESR(Equivalent Series Resistance) and impedance in stacked type film capacitor. As a result, the best conditions of heat-treated temperature, pressure and time were proved to be 130$^{\circ}C$, 10kg/$\textrm{cm}^2$ and 3hrs, respectively.

A Sensitivity Analysis for Three-Parameter Ellipsometry

  • Gyusung Chung;Duckhwan Lee;Woon-Kie Paik
    • Bulletin of the Korean Chemical Society
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    • v.12 no.5
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    • pp.477-483
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    • 1991
  • In the three-parameter ellipsometry (TPE), also known as reflectance-ellipsometry, the ellipsometric measurements, ${\Psi} and {\Delta}$, are combined with the reflectometric measurement, R, to determine the optical parameters and the thickness of a light-absorbing thin film. The constant ${\Psi}, {\Delta}$ and R surfaces are analyzed graphically to understand the nature of the TPE solutions. A sensitivityanalysis is shown to be useful not only for identifying the film properties which affect most the TPE measurements, but also for estimating errors in film properties arising from the uncertainties in measurements.

Electrical Properties of the Amorphous BaTi4O9 Thin Films for Metal-Insulator-Metal Capacitors (Metal-Insulator-Metal 캐패시터의 응용을 위한 비정질 BaTi4O9 박막의 전기적 특성)

  • Hong, Kyoung-Pyo;Jeong, Young-Hun;Nahm, Sahn;Lee, Hwack-Joo
    • Korean Journal of Materials Research
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    • v.17 no.11
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    • pp.574-579
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    • 2007
  • Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

Preparation and Electrical properties of the PLT(28) Thin Film (PLT(28) 박막의 제작과 전기적 특성에 관한 연구)

  • 강성준;정양희
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2002.11a
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    • pp.784-787
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    • 2002
  • We prepared the PLT(28) thin film by using sol-gel method and investigated the structure and electrical properties of the film. With the XRD and AFM analyses, it is found that PLT(28) thin film annealed at 6sot has a complete perovskite structure and its surface roughness is about 22$\AA$. We prepared PLT(28) thin film on the Pt/TiO$_{x}$SiO$_2$/Si substrate, in which the specimen has a planar capacitor structure, and analyzed the electrical properties of PLT(28) thin film. In result, PLT(28) thin film has a paraelectric phase and its dielectric constant and loss tangent at 10kHz are 761 and 0.024, respectively. Also, the storage charge density and leakage current density of PLT(28) thin film at W are 134fC/$\mu$m2 and 1.01 $\mu$A/cm2, respectively. As a result of this, we concluded that the PLT(28) thin film is a promising material to be used as a capacitor dielectrics for next generation DRAM.M.

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The Tree Properties of Polypropylene Thin Film (폴리프로필렌(Polypropylene)박막의 트리현상)

  • Kang, J.H.;Kim, H.J.;Yu, K.M.;Kim, J.S.;Han, S.O.;Park, K.S.
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1584-1586
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    • 1999
  • The polypropylene has been known to have higher melting temperature than Polyethylene. and good mechanical properties. This paper introduces the experiment result for tree properties of polypropylene thin film with a crystal structure. According to the experiment. tree properties is appeared boundary section of thin film first of all. Also, Spherulites magnitude of slow cooling is larger than that of rapid cooling.

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The Modified Magnetic Properties of $Mn_3Ga$ Ferrimagnet by Stabilizing on GaSb (001)

  • Feng, Wuwei;Dung, Dang Duc;Cho, Sung-Lae
    • Proceedings of the Korean Magnestics Society Conference
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    • 2009.12a
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    • pp.203-203
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    • 2009
  • We report on the epitaxial growth of tetragonal $DO_{22}$-type Mn3Ga films on GaSb (001) using molecular beam epitaxy and the related structural and magnetic properties. The as-studied $Mn_3Ga$ film was found to exhibit relatively small coercivity around 400 Oe, which differs greatly from the hard magnetic properties of $Mn_3Ga$ bulk specimen or films that are normally reported. This difference was probably attributed to the effects of the GaSb (001) substrate that forced the $Mn_3Ga$ film to be two-dimensionlly stabilized in the (114) orientation and thus led to the modified intrinsic properties of $Mn_3Ga$ films. The growth orientation of the Mn3Ga (114)//GaSb (001) also caused the easy magnetocrystalline direction located in the film plane due to the dominant shape anisotropy in the thin films.

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Dielectric and Electric Properties of Maleate Copolymer LB Films (Maleate계 공중합체 LB막의 전기 및 유전 특성)

  • 유승엽;정상범;박재철;권영수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.397-400
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    • 1996
  • We investigated electric and dielectric properties of MIM device using Maleate Copolymer LB films. The thickness of maleate copolymer LB film by ellipsometry measurements and X-ray diffraction pattern was about 27~30[ ]. The maleate copolymer 13 film have the property of insulator like organic ultra-thin film. The electric conduction was Schottky current measured by I-V characteristics, and the conductivity was 10$^{-15}$ ~10$^{-14}$ [S/cm]. Dielectric constant was about 5.0~6.0 by various measurement: I-V, frequency-depenent dielectric properties. Schottky barrier was about 0.9 ~1.0(eV). By relation between log I and 1/T, activation energy baa 0.74(eV). Frequency-depenent dielectric properties wart orientational polarization by the dipole.

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Properties and Structure of High Frequency Soft Magnetic Nano-composite Films

  • Ohnuma, Shigehiro;Masumoto, Hiroshi
    • Journal of Magnetics
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    • v.16 no.4
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    • pp.403-407
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    • 2011
  • Metal-insulator type, nano-granular soft magnetic films have been reviewed from the viewpoint of high frequency magnetic materials. The formation of nano-granular structure is related to the magnitude of heat of formation of intergranule materials. Variation of the ratio of granule phase to intergranule phase in the film is found to produce various characteristics in the magnetic properties of the film. The HRTEM observation reveals that neighboring granules in the film with above 60 at.% Co, contact at considerable points and the films show soft magnetic properties which are explainable in terms of the random anisotropy model for nano-crystalline materials. Addition of Ni group elements in Co-O based films enhances their anisotropy field up to 400 Oe and they exhibit excellent frequency response of permeability. Also, large electromagnetic noise suppression effect is demonstrated as one of their potential applications.