• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.1807-1812
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• 2007

A bulge testing system was developed to measure mechanical properties of thin film materials. A bulge pressure test system for pressurizing the bulge window of the film and a micro out-of-plane ESPI(Electronic Speckle Pattern Interferometric) system for measuring deflection of the film were included in the testing system developed. For the out-of-plane ESPI system, whole field speckle fringe pattern, corresponding to the out-of-plane deflection of the bulged film, was 3-dimensionally visualized using 4-bucket phase shifting algorithm and least square phase unwrapping algorithm. The bulge pressure for loading and unloading was controlled at a constant rate. From the pressure-deflection curve measured by this testing system, ain-plane stress-strain curve could be determined. In this study, elastic modulus of an electrolytic copper film 18 ${\mu}m$ was determined. The modulus was calculated from determining the plain-strain biaxial elastic modulus at the respective unloading slopes of the stress-strain curve and for the Poisson's ratio of 0.34.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.913-917
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• 2003

In the electronic components and devices fabrication, thin film resistors with low TCR(temperature coefficient of resistance) and high precision have been used over 3 GHz microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because it has low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of s-type with excellent resistors properties by RF-sputtering. Also we reported best deposited conditions of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to deposited conditions(between target and substrate, power supply)

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.17-17
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• 2010

We investigate CO gas sensing properties of multilayered TiO2 thin film gas sensors fabricated by colloidal templating of 300 nm of polymer spheres. Compared with plain films, the multilayered films show enhanced gas sensing with higher sensitivity and faster response. Also, colloidal templating by using smaller spheres (300 nm in diameter) leads to close-packed multilayered TiO2 thin films with very large-scale. This result suggest that understanding and control of the structures on the sensing properties of multilayered TiO2 thin films by colloidal templating is important in developing the films for real applications.

• 한국전기전자재료학회논문지
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• 제17권7호
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• pp.738-746
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• 2004

Recently zinc oxide(ZnO) has emerged as one of the most promising transparent conducting films with a strong demand of low cost and high performance optoelectronic devices, ZnO film has many advantages such as high chemical and mechanical stabilities, and abundance in nature. In this paper, in order to obtain the excellent transparent conducting film with low resistivity and high optical transmittance for Plasma Display Pannel(PDP), aluminium doped zinc oxide films were deposited on Corning glass substrate by dc magnetron sputtering method. The effects of the discharge power and doping amounts of $Al_2$$O_3$ on the electrical and optical properties were investigated experimentally. Particularly in order to lower the electrical resistivity, positive and negative bias voltages were applied on the substrate, and the effect of bias voltage on the electrical properties of ZnO:Al thin film were also studied and discussed. Films with lowest resistivity of $4.3 \times 10 ^{-4} \Omega-cm$ and good transmittance of 91.46 % have been achieved for the films deposited at 1 mtorr, $400^{\circ}C$, 40 W, Al content of 2 wt% with a substrate bias of +30 V for about 800 nm in film thickness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.500-501
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• 2005

Aluminum doped zinc oxide films (ZnO:Al) were deposited on glass substrate by DC magnetron sputtering from a ZnO target mixed with 2 wt% $Al_2O_3$. The effects of substrate bias on the electrical properties and film structure were studied. Films deposited with positive bias have been annealed at $600^{\circ}C$ using rapid thermal anneal (RTA) process. The effects of RTA on the evolution of film microstructure are to be also studied using X-ray diffraction, transmission electron microscopy, and atomic force microscopy. Positive bias sputtering may induce lattice defects caused by electron bombardments during deposition. The as-deposited film microstructure evolves from the film with high defect density to more stable film condition. The electrical properties of the films after RTA process were also studied and the results were correlated with the evolution of film microstructures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.656-658
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• 2004

Pb$(Zr_{0.8}Ti_{0.2})TiO_3$ powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method, and the structural and ferroelectric properties asafunting of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $70\sim90{\mu}m$. The relative dielectric constant and the dielectric loss of the PZT thick film sintered at $1050^{\circ}C$t were approximately 676 and 1.4%, respectively. The remanent polarization and the coercive field of the PZT thick film sintered at $1050^{\circ}C$ were $21.15{\mu}C/cm^2$ and 10.1 kV/cm, mapetively

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.214-214
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• 2009

While critical properties of BSCCO wires rely considerably on grid direction upon BSCCO and have very complicated mechanism of generating a superconducting phase, making it difficult to improve properties of wires, YBCO thin-film wires which can be formed in a superconducting phase upon metal board through vapor deposition processing can get excellent direction and reduce manufacturing costs with more flexibility in improving critical properties; thus, they will be suitable for instrument application in the future. Contrary to BSCCO wires for which thick silver alloy covering materials should inevitably be used, moreover, YBCO thin-film wires have an advantage of making thickness and quality of covering materials different by usage. Such a property can be an important element to widen application of wires by presenting possibility of using thin-film wires as superconducting material for fault current limiter as well as for high power current application. In this study we intend to prepare YBCO thin-film wires with different stabilizer layers to analyze current application and current restriction properties by stabilizer layers on the basis of detailed researches on changes in current classification properties below critical value.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.86-89
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• 2003

SBT thin film for semiconductor device that is made by RF magnetron sputtering method studied electrical properties under various temperature condition. Dielectric constant who differ annealing condition appears highest in $750[^{\circ}C]$ and it is 213. Also, C-V properties by annealing temperature of SBT thin film for semiconductor device is no change almost to $600[^{\circ}C]$ and shows non-linear butterfly shape more than $650[^{\circ}C]$ Maximum capacitance and difference of smallest capacitance show the biggest difference in $750[^{\circ}C]$ as degree that domain wall motion contributes in ferrelectric polarization value in C-V characteristic curve of ferroelectric that this shows typical ferroelectric properties. Therefore, SBT thin film for semiconductor device that is annealing in $750[^{\circ}C]$ expressed the most superior electrical and ferroelectric properties.

• 한국세라믹학회지
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• 제33권6호
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• pp.665-671
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• 1996

Ferroelectric Pb(Fe1/2Nb1/2)O3 thin films were successfully fabricated on ITO/Glass substrate by sol-gel proces-sing and characterized to determine the dielectric and electric properties. Viscosity of PEN sol measured to investigate rheological properties was 3.25 cP which was proper for coating. The sol also showed Newtonian behavior. RTA(Rapid Thermal Annealing) was used for the annealing of the thin film and 1200~1700$\AA$ thick PEN thin films were fabricated by repeating the intermediate and the final annealing. After the deposition of Pt as top electrode by vacuum evaporation dielectric and electric properties were measured. Dielectric properties of FFN thin film were enhanced by increasing the perovskite phase fraction with increasing the annealing temperature. Measured dielectric constant of 1700$\AA$ PFN thin film annealed at $650^{\circ}C$ was 890 at 1kHz Capacitatnce density and dielectric loss were 47 fF/${\mu}{\textrm}{m}$2 and 0.47 respectively. As a result of measuring Curie temperature PFN thin films had Curie point with a rang of 110~12$0^{\circ}C$ and showed broad dielectric peak at that point. Leakage current of the PFN thin films were increased with increasing the annealing tempera-ture.

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.265-271
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• 2003

Ferroelectric lanthanum-substituted Bi$_4$Ti$_3$O$_{12}$(BLT) thin films were fabricated by spin-coating onto a Pt/Ti/SiO$_2$/Si substrate by metalorganic decomposition technique. The grain size in BLT thin films were prepared with controlled by various drying process. The effect of grain size on the crystallization and ferroelectric properties were investigated by x-ray diffraction and field emission scanning electron microscope. The dependence of crystallization and electrical properties are related to the grain size in BLT thin films with different drying temperature. The remanent polarization of BLT thin film increases with the increasing grain size. The value of 2P$_{r}$ and E$_{c}$ of BLT thin film dried at 45$0^{\circ}C$ were 25.9 $\mu$C/$\textrm{cm}^2$ and 85 kV/cm, respectively. The BLT thin film with larger grain size has better fatigue properties. The fatigue properties revealed that small grained film showed more degradation of switching charge than large grained films.lms.s.